CN203559154U - 一种碳化硅外延生长装置 - Google Patents
一种碳化硅外延生长装置 Download PDFInfo
- Publication number
- CN203559154U CN203559154U CN201320684806.8U CN201320684806U CN203559154U CN 203559154 U CN203559154 U CN 203559154U CN 201320684806 U CN201320684806 U CN 201320684806U CN 203559154 U CN203559154 U CN 203559154U
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- graphite
- epitaxial growth
- carbide epitaxial
- blowdown pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 68
- 239000010439 graphite Substances 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000010453 quartz Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 35
- 238000000407 epitaxy Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320684806.8U CN203559154U (zh) | 2013-10-31 | 2013-10-31 | 一种碳化硅外延生长装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320684806.8U CN203559154U (zh) | 2013-10-31 | 2013-10-31 | 一种碳化硅外延生长装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203559154U true CN203559154U (zh) | 2014-04-23 |
Family
ID=50508885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320684806.8U Expired - Lifetime CN203559154U (zh) | 2013-10-31 | 2013-10-31 | 一种碳化硅外延生长装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203559154U (zh) |
-
2013
- 2013-10-31 CN CN201320684806.8U patent/CN203559154U/zh not_active Expired - Lifetime
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee after: State Grid Corporation of China Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: STATE GRID SMART GRID Research Institute Patentee before: State Grid Corporation of China |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171103 Address after: 102211 Beijing city Changping District future science and Technology City Binhe Road No. 18 Co-patentee after: State Grid Corporation of China Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Co-patentee after: STATE GRID ZHEJIANG ELECTRIC POWER Co. Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Patentee before: State Grid Corporation of China |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20140423 |