CN203554270U - MOSFET drive circuit - Google Patents
MOSFET drive circuit Download PDFInfo
- Publication number
- CN203554270U CN203554270U CN201320628498.7U CN201320628498U CN203554270U CN 203554270 U CN203554270 U CN 203554270U CN 201320628498 U CN201320628498 U CN 201320628498U CN 203554270 U CN203554270 U CN 203554270U
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- Prior art keywords
- mosfet
- grid
- drive circuit
- pulse transformer
- npn type
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- 230000000295 complement effect Effects 0.000 claims abstract description 4
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 238000011084 recovery Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009514 concussion Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
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Abstract
This utility model provides a MOSFET drive circuit, comprising a drive chip, a pulse transformer, two grid resistors, two fast-recovery Schottky diodes, a NPN type triode and a MOSFET transistor, wherein the drive chip comprises two lead feet which output complementary pulsing signals; homonym terminal of the secondary side of the pulse transformer is connected to the grid electrode of the MOSFET transistor through two grid resistors. The source electrode of the MOSFET transistor is connected to the synonym terminal of the secondary side of the pulse transformer through two fast recovery Schottky diodes, and the grid electrode of the MOSFET transistor is connected to the collector of the NPN type triode through one of the grid resistor, and the source electrode is directly connected to the emission stage of a NPN triode. This MOSFET drive circuit can realize quick switching on and off oof the MOSFET transistor, has strong capability of anti-interference and is applicable to working in a high-frequency state.
Description
Technical field
The utility model relates to power electronics and drives field, more particularly, relates to a kind of MOSFET drive circuit.
Background technology
Along with the development of power electronic technology, the application of power MOSFET has obtained significant progress.Therefore MOSFET is a kind of voltage-driven semiconductor device, and because its driving power is little, operating frequency is high, and Heat stability is good is widely used in the circuit that needs electronic switch, common as Switching Power Supply, motor drive, illumination light modulation etc.
As shown in Figure 1, triode Q1, the Q2 with totem output are connected to the former limit of pulse transformer T to traditional MOSFET drive circuit by capacitance C1.The secondary winding of transformer T is connected to the grid of MOSFET by resistance R1, and between the grid of this MOSFET and source electrode, is parallel with voltage-stabiliser tube D1.Control signal, by triode Q1, Q2, realizes the control that MOSFET is turned on and off.
Yet the price of the isolation drive chip of current power MOSFET is generally higher, and be subject to certain limitation in some certain applications.And the drive circuit shown in Fig. 1, owing to being subject to the impact of MOSFET parasitic parameter, when speed-sensitive switch state, gate charge can not discharge fast, thereby limited greatly the raising of converter operating frequency, and the driving signal of grid is also easily subject to the interference of switching noise, the possibility that exists driving voltage concussion or MOSFET to mislead.
Utility model content
The technical problems to be solved in the utility model is, high for above-mentioned MOSFET drive circuit price, use occasion is limited and the problem of unstable properties, provides a kind of with isolation the MOSFET drive circuit that can fast and reliable turn-offs.
The technical scheme that the utility model solves the problems of the technologies described above is, a kind of MOSFET drive circuit is provided, comprise and drive chip, pulse transformer, two resistances, two fast Schottky diode, NPN type triode and MOSFET pipes of recovering, wherein: described driving chip comprises two pins of exporting complementary pulse signal, and these two pins are connected respectively to Same Name of Ends and the different name end on the former limit of pulse transformer; The Same Name of Ends of the secondary of described pulse transformer is connected to the grid of MOSFET pipe via two resistances; The source electrode of described MOSFET pipe fast recovers the different name end that Schottky diodes are connected to the secondary of pulse transformer via two, and the grid of this MOSFET pipe collector electrode, the source electrode that are connected to NPN type triode via one of them resistance is directly connected to the emitter of NPN type triode; The base stage of described NPN type triode is connected to two fast tie points that recover Schottky diode.
In MOSFET drive circuit described in the utility model, between the grid of described MOSFET pipe and source electrode, be connected with voltage stabilizing didoe.
In MOSFET drive circuit described in the utility model, between the grid of described MOSFET pipe and source electrode, be also connected with pull down resistor, described pull down resistor and voltage stabilizing didoe are connected in parallel.
In MOSFET drive circuit described in the utility model, the grid of described MOSFET pipe is connected to the base stage of NPN type triode via a resistance and pull down resistor.
In MOSFET drive circuit described in the utility model, the former limit of described pulse transformer, the turn ratio of secondary are 1:1.
In MOSFET drive circuit described in the utility model, a pin of described driving chip is connected to the former limit of pulse transformer via electric capacity.
MOSFET drive circuit of the present utility model, by driving chip, two fast Schottky diodes and NPN type triodes of recovering, can realize the quick shutoff of MOSFET pipe, and the antijamming capability of this drive circuit strong, be applicable to being operated in high frequency state.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of traditional MOSFET drive circuit.
Fig. 2 is the schematic diagram of the utility model MOSFET drive circuit embodiment.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
As shown in Figure 2, be the schematic diagram of the utility model MOSFET drive circuit embodiment.This MOSFET drive circuit comprises driving chip, pulse transformer T, resistance R1, R2, two fast Schottky diode D1, D2(of recovering are by being used the fast Schottky diode that recovers, can when turn-offing, fast MOSFET pipe be turn-offed), NPN type triode Q1 and MOSFET pipe, wherein drive chip to comprise two pin OUTA, OUTB that export complementary pulse signal, and these two pin OUTA, OUTB are connected respectively to Same Name of Ends and the different name end on the former limit of pulse transformer T; The Same Name of Ends of the secondary of pulse transformer T is connected to the grid G of MOSFET pipe via two resistance R1, R2; The source S of MOSFET pipe fast is recovered the different name end that Schottky diode D1, D2 are connected to the secondary of pulse transformer T via two, and the grid G of this MOSFET pipe collector electrode, the source S that are connected to NPN type triode Q1 via a resistance R2 is directly connected to the emitter of NPN type triode Q1; And the base stage of NPN type triode Q1 is connected to two fast tie points that recover Schottky diode D1, D2.
In above-mentioned MOSFET drive circuit, when driving chip OUTA pin output high level, OUTB output low level, the former limit of pulse transformer T Motor Winding Same Name of Ends for just, different name end is for bearing.Original edge voltage is coupled to secondary, make fast recovery Schottky diode D1, the D2 conducting of secondary, by NPN type triode Q1 base voltage clamper in low level, thereby triode Q1 cut-off, pulse transformer T secondary Same Name of Ends voltage signal arrives the grid of MOSFET pipe through resistance R1, R2, thus the conducting of driven MOS FET pipe.
When driving chip OUTB pin output high level, during OUTA pin output low level, pulse transformer T secondary Motor Winding Same Name of Ends is for negative, different name end is for just, now recover soon Schottky diode D1 cut-off, but because NPN type triode Q1 base stage is connected with MOSFET tube grid G by resistance R 3, resistance R2, as long as MOSFET tube grid G is high level, the NPN type triode Q1 of boostrap circuit will conducting, thereby MOSFET tube grid electric charge is discharged fast, and by MOSFET tube grid voltage clamping in low level, now MOSFET pipe is in off state.At MOSFET blocking interval, if having to disturb, cause grid G voltage to raise, owing to there being the existence of boostrap circuit, at this moment NPN type triode Q1 can automatic conducting, by MOSFET tube grid voltage clamping in low level, thereby prevented that MOSFET pipe from misleading.
During the conducting of MOSFET pipe, the resistance value of grid is the resistance sum of resistance R1, R2, and during shutoff, the resistance value of grid is the resistance of resistance R2.Therefore by selecting suitable resistance R1, the resistance of R2, can realize the adjustment to MOSFET pipe drive waveforms rising edge slope and trailing edge slope.
In above-mentioned MOSFET drive circuit; can between the grid G of MOSFET pipe and source S, connect a voltage stabilizing didoe D3; once the grid voltage of MOSFET pipe surpasses the protection value of voltage stabilizing didoe D3; due to voltage spikes will flow to the earth by voltage stabilizing didoe D3 fast; prevent that MOSFET tube grid G from damaging because of overvoltage, thereby play the protective effect to grid.In addition, also can between the grid G of MOSFET pipe and source S, increase a pull down resistor R4, this pull down resistor R4 and voltage stabilizing didoe D3 are connected in parallel, and it can be managed blocking interval at MOSFET its grid voltage is dragged down, and are also a kind of modes that prevents that grid voltage is uncertain and MOFET pipe misleads.Certainly, in actual applications, also can prevent by other means MOSFET tube grid G overvoltage.
The grid G of MOSFET pipe is connected to the base stage of NPN type triode Q1 via a resistance R2 and resistance R 3.And the former limit of pulse transformer T, the turn ratio of secondary are 1:1.
In addition, can also seal on the former limit of pulse transformer T a capacitor C 1(and make to drive a pin of chip via capacitor C 1, to be connected to the former limit of pulse transformer T), thus effectively prevent pulse transformer T magnetic bias.
The above; it is only preferably embodiment of the utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claim.
Claims (6)
1. a MOSFET drive circuit, it is characterized in that: comprise and drive chip, pulse transformer, two resistances, two fast Schottky diode, NPN type triode and MOSFET pipes of recovering, wherein: described driving chip comprises two pins of exporting complementary pulse signal, and these two pins are connected respectively to Same Name of Ends and the different name end on the former limit of pulse transformer; The Same Name of Ends of the secondary of described pulse transformer is connected to the grid of MOSFET pipe via two resistances; The source electrode of described MOSFET pipe fast recovers the different name end that Schottky diodes are connected to the secondary of pulse transformer via two, and the grid of this MOSFET pipe collector electrode, the source electrode that are connected to NPN type triode via one of them resistance is directly connected to the emitter of NPN type triode; The base stage of described NPN type triode is connected to two fast tie points that recover Schottky diode.
2. MOSFET drive circuit according to claim 1, is characterized in that: between the grid of described MOSFET pipe and source electrode, be connected with voltage stabilizing didoe.
3. MOSFET drive circuit according to claim 2, is characterized in that: between the grid of described MOSFET pipe and source electrode, be also connected with pull down resistor, described pull down resistor and voltage stabilizing didoe are connected in parallel.
4. MOSFET drive circuit according to claim 3, is characterized in that: the grid of described MOSFET pipe is connected to the base stage of NPN type triode via a resistance and pull down resistor.
5. MOSFET drive circuit according to claim 1, is characterized in that: the former limit of described pulse transformer, the turn ratio of secondary are 1:1.
6. MOSFET drive circuit according to claim 1, is characterized in that: a pin of described driving chip is connected to the former limit of pulse transformer via electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320628498.7U CN203554270U (en) | 2013-10-11 | 2013-10-11 | MOSFET drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320628498.7U CN203554270U (en) | 2013-10-11 | 2013-10-11 | MOSFET drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203554270U true CN203554270U (en) | 2014-04-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320628498.7U Expired - Lifetime CN203554270U (en) | 2013-10-11 | 2013-10-11 | MOSFET drive circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN203554270U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883034A (en) * | 2015-05-14 | 2015-09-02 | 华为技术有限公司 | Driving circuit of switching bridge arm and switching power supply |
| CN105024678A (en) * | 2015-08-18 | 2015-11-04 | 北京雪迪龙科技股份有限公司 | MOSFET (metal oxide semiconductor field effect transistor) driving circuit and MOSFET driving system |
| CN105391274A (en) * | 2015-11-06 | 2016-03-09 | 国网上海市电力公司 | Drive circuit of control system for direct-current transmission series-parallel converter |
| CN110572014A (en) * | 2019-08-29 | 2019-12-13 | 合肥博雷电气有限公司 | MOS tube driving circuit with turn-off negative voltage |
| CN111614239A (en) * | 2020-05-29 | 2020-09-01 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN112147481A (en) * | 2020-11-27 | 2020-12-29 | 杭州飞仕得科技有限公司 | IGBT fault return circuit and electronic equipment |
-
2013
- 2013-10-11 CN CN201320628498.7U patent/CN203554270U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883034A (en) * | 2015-05-14 | 2015-09-02 | 华为技术有限公司 | Driving circuit of switching bridge arm and switching power supply |
| CN104883034B (en) * | 2015-05-14 | 2017-07-14 | 华为技术有限公司 | Drive circuit and Switching Power Supply for switching bridge arm |
| CN105024678A (en) * | 2015-08-18 | 2015-11-04 | 北京雪迪龙科技股份有限公司 | MOSFET (metal oxide semiconductor field effect transistor) driving circuit and MOSFET driving system |
| CN105024678B (en) * | 2015-08-18 | 2018-09-14 | 北京雪迪龙科技股份有限公司 | A kind of MOSFET driving circuits and system |
| CN105391274A (en) * | 2015-11-06 | 2016-03-09 | 国网上海市电力公司 | Drive circuit of control system for direct-current transmission series-parallel converter |
| CN105391274B (en) * | 2015-11-06 | 2018-08-07 | 国网上海市电力公司 | A kind of driving circuit in direct current transportation serial parallel converter control system |
| CN110572014A (en) * | 2019-08-29 | 2019-12-13 | 合肥博雷电气有限公司 | MOS tube driving circuit with turn-off negative voltage |
| CN111614239A (en) * | 2020-05-29 | 2020-09-01 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN111614239B (en) * | 2020-05-29 | 2022-06-07 | 科华恒盛股份有限公司 | Transformer driving circuit |
| CN112147481A (en) * | 2020-11-27 | 2020-12-29 | 杭州飞仕得科技有限公司 | IGBT fault return circuit and electronic equipment |
| CN112147481B (en) * | 2020-11-27 | 2021-02-05 | 杭州飞仕得科技有限公司 | IGBT fault return circuit and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210520 Address after: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: SUZHOU HUICHUAN UNITED POWER SYSTEM Co.,Ltd. Address before: 215000 north side of Youxiang Road, Wangshan Industrial Park, Wuzhong Economic Development Zone, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU INOVANCE TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: Suzhou Huichuan United Power System Co.,Ltd. Address before: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU HUICHUAN UNITED POWER SYSTEM Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140416 |
|
| CX01 | Expiry of patent term |