CN203521452U - LED chip structure for improving light emitting efficiency - Google Patents
LED chip structure for improving light emitting efficiency Download PDFInfo
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- CN203521452U CN203521452U CN201320652417.7U CN201320652417U CN203521452U CN 203521452 U CN203521452 U CN 203521452U CN 201320652417 U CN201320652417 U CN 201320652417U CN 203521452 U CN203521452 U CN 203521452U
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- Prior art keywords
- gallium nitride
- nitride layer
- type gallium
- metal film
- electrode
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- 229910002601 GaN Inorganic materials 0.000 claims abstract description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 5
- 239000010948 rhodium Substances 0.000 claims abstract description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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Abstract
The utility model relates to an LED chip structure for improving light emitting efficiency. The LED chip structure comprises a substrate, wherein the substrate is provided with an N-type gallium nitride layer. The LED chip structure is characterized in that an upper surface of the N-type gallium nitride layer is provided with a quantum well, an upper surface of the quantum well is provided with a P-type gallium nitride layer, an upper surface of the P-type gallium nitride layer is provided with a first metal film, an upper surface of the first metal film is provided with a P electrode, the upper surface of the P-type gallium nitride layer is provided with an indium tin oxide film, the indium tin oxide film covers the P-type gallium nitride layer and the first metal film, the upper surface of the N-type gallium nitride layer has an etching area formed through etching, the etching area is provided with an N electrode, a bottom portion of the N electrode is provided with a second metal film, the N electrode is in ohmic contact with the N-type gallium nitride layer, the first metal film is in non-ohmic contact with the P-type gallium nitride layer, and the first metal film and the second metal film are platinum, rhodium or aluminum. The LED chip structure for improving light emitting efficiency improves light reflection of lower portions of the P and N electrodes and improves external quantum efficiency.
Description
Technical field
The utility model relates to a kind of LED chip, and especially a kind of LED chip structure that improves luminous efficiency, belongs to LED chip technical field.
Background technology
In existing formal dress chip technology, normally adopt following two kinds of modes; Mode one: do current barrier layer (CBL) on p-GaN, then do current extending (TCL) and electrode; Mode two: do high anti-layer (rear such as argent etc.) on p-GaN, then do current barrier layer (CBL), current extending and the electrode of silicon dioxide.
Mode one is that the electrode zone of the light that sends of quantum well on current extending absorbs, and causes the external quantum efficiency of LED chip not high.
Though mode two can improve certain external quantum efficiency, this mode defect has 2 points; (1) this structure has only promoted certain P electrode external quantum efficiency conventionally, and the external quantum efficiency of N electrode does not promote; (2) this structure has increased the evaporation process of reflective metals in chip technology, and cost increases relatively.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of LED chip structure that improves luminous efficiency is provided, and increases P electrode and N electrode below to reflection of light, improves external quantum efficiency.
The technical scheme providing according to the utility model, the LED chip structure of described raising luminous efficiency, comprise substrate, n type gallium nitride layer is set on substrate, it is characterized in that: at described n type gallium nitride layer upper surface, quantum well is set, at quantum well upper surface, P type gallium nitride layer is set, at P type gallium nitride layer upper surface, the first metal film is set, at the first metal film upper surface, P electrode is set, at P type gallium nitride layer upper surface, indium tin oxide films is set, this indium tin oxide films covers P type gallium nitride layer and the first metal film; At described n type gallium nitride layer upper surface, have the etch areas that etching forms, in etch areas, N electrode is set, the bottom of N electrode arranges the second metal film, N electrode and n type gallium nitride layer ohmic contact.
Non-ohmic contact between described the first metal film and P type gallium nitride layer.
Described the first metal film and the second metal film are platinum, rhodium or aluminium.
The LED chip structure of raising luminous efficiency described in the utility model is different from and in prior art, on p-GaN, does current barrier layer (CBL), then does current extending (TCL) and electrode; Metallic film of the present utility model not only reaches CBL effect by non-ohmic contact, and has increased P, N two electrode belows to reflection of light, improves external quantum efficiency; The utility model is different from prior art and on p-GaN, does high anti-layer (rear such as argent etc.), do again current barrier layer (CBL), current extending and the electrode of silicon dioxide, the utility model can reduce the processing step of existing production technology, reduce costs, and because reduce technique, can reduce extremely, promote yield.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with concrete accompanying drawing, the utility model is described in further detail.
As shown in Figure 1: the LED chip structure of described raising luminous efficiency comprises substrate 1, n type gallium nitride layer 2, quantum well 3, P type gallium nitride layer 4, the first metal film 5-1, the second metal film 5-2, P electrode 6, N electrode 7, indium tin oxide films 8 etc.
As shown in Figure 1, the utility model comprises substrate 1, n type gallium nitride layer 2 is set on substrate 1, at n type gallium nitride layer 2 upper surface, quantum well 3 is set, at quantum well 3 upper surfaces, P type gallium nitride layer 4 is set, at P type gallium nitride layer 4 upper surfaces, the first metal film 5-1 is set, at the first metal film 5-1 upper surface, P electrode 6 is set, at P type gallium nitride layer 4 upper surfaces, indium tin oxide films 8 is set, this indium tin oxide films 8 covers P type gallium nitride layer 4 and the first metal film 5-1; At described n type gallium nitride layer 2 upper surface, have the etch areas that etching forms, in etch areas, N electrode 7 is set, the bottom of N electrode 7 arranges the second metal film 5-2;
Non-ohmic contact between described the first metal film 5-1 and P type gallium nitride layer 4, whether the second metal film 5-2 and n type gallium nitride layer 2 form ohmic contact all can; Described the first metal film 5-1 and the second metal film 5-2 are the high-reflectivity metals such as platinum, rhodium or aluminium.
The LED chip structure of raising luminous efficiency described in the utility model adopts following manufacturing process: on substrate 1, form successively n type gallium nitride layer 2, quantum well 3 and P type gallium nitride layer 4; By chemical etching, P type gallium nitride layer 4 is etched to n type gallium nitride layer 2, etch areas evaporation at n type gallium nitride layer 2 forms the second metal film 5-2, on P type gallium nitride layer 4, evaporation forms the first metal film 5-1, at the etch areas evaporation N of n type gallium nitride layer 2 electrode 7, N electrode 7 and n type gallium nitride layer 2 ohmic contact; On P type gallium nitride layer 4, make indium tin oxide films 8, indium tin oxide films 8 covers the first metal film 5-1 and P type gallium nitride layer 4.
The metal film that the utility model changes to traditional silicon dioxide current barrier layer high reflectance and do not form ohmic contact, such as: the metals such as platinum, rhodium; The utility model utilizes metallic film and P-GaN, N-GaN not to form ohmic contact and electric current is expanded to indium tin oxide films, and the electric current that makes to inject chip internal is more even, thereby improves internal quantum efficiency; Utilize again high reflectance that the light being transferred on P, N electrode is reflected back to chip internal, thereby transfer out chip by other region of chip, improve external quantum efficiency.
Claims (3)
1. a LED chip structure that improves luminous efficiency, comprise substrate (1), n type gallium nitride layer (2) is set on substrate (1), it is characterized in that: at described n type gallium nitride layer (2) upper surface, quantum well (3) is set, at quantum well (3) upper surface, P type gallium nitride layer (4) is set, at P type gallium nitride layer (4) upper surface, the first metal film (5-1) is set, at the first metal film (5-1) upper surface, P electrode (6) is set, at P type gallium nitride layer (4) upper surface, indium tin oxide films (8) is set, this indium tin oxide films (8) covers P type gallium nitride layer (4) and the first metal film (5-1), at described n type gallium nitride layer (2) upper surface, have the etch areas that etching forms, in etch areas, N electrode (7) is set, the bottom of N electrode (7) arranges the second metal film (5-2), N electrode (7) and n type gallium nitride layer (2) ohmic contact.
2. the LED chip structure of raising luminous efficiency as claimed in claim 1, is characterized in that: non-ohmic contact between described the first metal film (5-1) and P type gallium nitride layer (4).
3. the LED chip structure of raising luminous efficiency as claimed in claim 2, is characterized in that: described the first metal film (5-1) and the second metal film (5-2) are platinum, rhodium or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320652417.7U CN203521452U (en) | 2013-10-22 | 2013-10-22 | LED chip structure for improving light emitting efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320652417.7U CN203521452U (en) | 2013-10-22 | 2013-10-22 | LED chip structure for improving light emitting efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203521452U true CN203521452U (en) | 2014-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320652417.7U Expired - Fee Related CN203521452U (en) | 2013-10-22 | 2013-10-22 | LED chip structure for improving light emitting efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203521452U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531682A (en) * | 2013-10-22 | 2014-01-22 | 江苏新广联科技股份有限公司 | LED (Light Emitting Diode) chip structure capable of improving light emitting efficiency |
| CN105826303A (en) * | 2015-01-26 | 2016-08-03 | Lg伊诺特有限公司 | Light emitting device, light emitting device package having same and light system having same |
| CN108231971A (en) * | 2018-02-01 | 2018-06-29 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip and preparation method thereof |
-
2013
- 2013-10-22 CN CN201320652417.7U patent/CN203521452U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531682A (en) * | 2013-10-22 | 2014-01-22 | 江苏新广联科技股份有限公司 | LED (Light Emitting Diode) chip structure capable of improving light emitting efficiency |
| CN105826303A (en) * | 2015-01-26 | 2016-08-03 | Lg伊诺特有限公司 | Light emitting device, light emitting device package having same and light system having same |
| CN105826303B (en) * | 2015-01-26 | 2021-07-09 | Lg伊诺特有限公司 | Light emitting device, light emitting device package having the same, and lighting system thereof |
| CN108231971A (en) * | 2018-02-01 | 2018-06-29 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140402 |