CN203498096U - Silicon seed crystalline rod holder for polycrystalline silicon deposition device - Google Patents
Silicon seed crystalline rod holder for polycrystalline silicon deposition device Download PDFInfo
- Publication number
- CN203498096U CN203498096U CN201320242131.1U CN201320242131U CN203498096U CN 203498096 U CN203498096 U CN 203498096U CN 201320242131 U CN201320242131 U CN 201320242131U CN 203498096 U CN203498096 U CN 203498096U
- Authority
- CN
- China
- Prior art keywords
- matrix
- chuck clamping
- silicon
- clamping element
- silicon seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The utility model provides a silicon seed crystalline rod holder for a polycrystalline silicon deposition device. The silicon seed crystalline rod holder comprises a base body and a chuck clamping piece, wherein the chuck clamping piece is provided with a groove used for containing a silicon seed crystalline rod and comprises a mounting part; the base body comprises a containing space used for containing the mounting part of the chuck clamping piece; and a recess which can form a thermal insulation air gap between the base body and the end face is formed in the end face of the mounting part of the chuck clamping piece. Because the holder has the optimal configuration, thermal insulation of the silicon seed crystalline rod can be ensured, so that the mechanical stress of the silicon seed crystalline rod is reduced, the silicon seed crystalline rod is firmly fixed, and the safety and effectiveness serving as a whole are improved in the polycrystalline silicon deposition process. Moreover, high electric conductivity and thermal conductivity between the holder and a current lead can be ensured, a large-diameter silicon seed crystalline rod can grow, and economical efficiency of the holder is guaranteed.
Description
Technical field
The utility model relates to semiconductor material preparation, relates in particular to the preparation for the polysilicon of microtronics, power engineering, solar engineering etc., relates more specifically in the During Hydrogen Reducing of silicon for clamping the equipment of silicon seed bar when the deposit spathic silicon.
Background technology
Adopt the siliceous deposits reaction of chlorosilane hydrogen reduction method in the reactor of various configurations (design), to carry out, for example, this reactor be positioned at the upstream position of current feed (current feedthrough) and downstream position and with equipment connection with fixing silicon seed bar.Due to silicon seed bar and the appearance that causes thermograde of the temperature contrast between current feed/electrode of heating, so the most important condition of aforesaid device guarantees that silicon seed bar is heat insulation exactly.Meanwhile, also will guarantee that silicon seed bar firmly fixes, and then (whereon in its turn it depends) determine the quality of the final product of preparation, embodied the globality of silicon seed bar and polysilicon deposition reactor.Some structures of existing aforesaid device can meet the demand in varying degrees.Yet present target provides a kind of the best, can meet the structure of whole demands for these equipment, and can introduce the equipment in this field with these functions in most economical mode to one's profit.
In the patent of WO2010133386 disclosed a kind of in polysilicon deposition reactor, for clamping the clamping cone of silicon growth rod, be to approach prior art of the present utility model most, this clamping cone is also selected as standardized component simultaneously.This clamping cone comprises: matrix and holder, this holder has for placing the groove of silicon growth rod.Wherein, this holder has installation portion, in this matrix, is provided with spatial accommodation, and this spatial accommodation is for holding the installation portion of this holder.This matrix Rotational Symmetry, and comprise fabricated section to attach it on the current feed of polysilicon deposition apparatus.In assembling, between matrix and current feed, leave fit-up gap.
In above-mentioned prior art, the defect of clamp cone body structure comprises: in polysilicon deposition process, silicon seed bar is heat insulation insufficient, this just causes having thermal stresses in silicon wafer seed bar, thereby causes silicon seed bar locating to occur initial crackle near its place, bottom (base).Above-described defect, by causing the expense of the embodiment of polysilicon deposition technique to increase, does not calculate this technique when using clamping cone of the prior art.
Utility model content
Therefore, the purpose of this utility model is to provide a kind of silicon wafer seed rod holder for polysilicon deposition apparatus, this clamper has best being configured to and guarantees good heat insulation of silicon wafer seed bar, mechanical stress in silicon wafer seed bar reduces and this silicon wafer seed bar is firmly fixed, and the security in polysilicon deposition process and validity will be done as a whole lifting; Guarantee that high heat conduction between clamper and current feed and electroconductibility are so that the polycrystalline silicon rod of production larger diameter as much as possible; Equally also guaranteed the economy of clamper operation.
By providing a kind of silicon wafer seed rod holder for polysilicon deposition apparatus to achieve the above object.This clamper comprises matrix and chuck clamping element, and this clamping element has for holding the groove of silicon wafer seed bar.Chuck clamping element comprises installation portion, and this matrix is provided with for holding the spatial accommodation of the installation portion of this chuck clamping element.On an end face of the installation portion of this chuck clamping element, be provided with recess to form heat insulation clearance between this matrix and this end face.
According to the clamper with above-mentioned configuration providing in the utility model, can make thermograde minimizing longitudinally in silicon seed bar, thereby the mechanical stress in silicon seed bar is reduced, finally, when hydrogen, steam or mixed gas are sent into reactor, this clamper can guarantee to appear at silicon seed bar to be reduced in a large number near the crackle bottom it.In addition, existence due to chuck clamping element, the configuration of the clamper providing according to the utility model can make silicon wafer seed bar be securely fixed in polysilicon deposition apparatus, because this chuck clamping element can be guaranteed pressure, is evenly distributed on the whole contact surface between ground to be installed silicon wafer seed bar and chuck clamping element.Meanwhile, this also may increase the supporting capacity of silicon wafer seed bar.In addition, in the configuration providing according to the utility model, the rigidity of silicon wafer seed bar clamps and can make its stability be guaranteed, and can make it without any risk of failure in the situation that, at inside reactor, prepare the silicon seed bar that diameter surpasses 100mm.
It is rational that embodiment of the present utility model is provided.Wherein, the installation portion of this chuck clamping element is contained in the spatial accommodation of this matrix, between the installation portion of chuck clamping element and this matrix, forms fit-up gap, and this can make better heat insulation assurance of silicon seed bar.
This embodiment of the present utility model or available.Wherein, this clamper comprises for matrix being fixed to (secure) at the member of polysilicon deposition apparatus.Should with the form of nut, produce for fixing the member of this clamper matrix, so that this clamper is securely fixed in the current feed place of reactor.The configuration of this nut, particularly size can make the contact area between clamper and the current feed of reactor increase, and then can guarantee between current feed and clamper, to have uniform high heat conduction and electroconductibility.
Preferably, this matrix is roughly cylindrical, has spatial accommodation (receptacle) to this matrix is arranged on to the current feed place of polysilicon deposition apparatus in the bottom of this matrix.
Preferably, this chuck clamping element comprises that cone-shaped clamping section is convenient to firmly fix this silicon wafer seed bar.
Preferably, this clamper adopts graphite to make.Adopting graphite to make this clamper is the performance based on graphite uniqueness, especially, its application in the preparation of electrode, Heating element, this depends on the high conductivity of graphite and the corrosion resistance nature of resistance to any chemical mediator corrosion.
It is rational that the utility model provides this embodiment.Wherein, for holding the cross section of the groove of silicon wafer seed bar, have different diameters, the diameter of this groove is designed to reduce gradually downwards.This configuration of this groove can make its stability that improves as far as possible silicon wafer seed bar, and pressure is uniformly distributed on contact surface.This pressure on whole fundamental plane, be uniformly distributed can guarantee in electrical contact securely.In addition, the pressure (increasing along with the increase of silicon wafer seed bar weight) being applied on contact surface can make interfacial resistance reduce, increase along with the cross-sectional area of silicon growth rod, adding hot-fluid also can increase, according to this viewpoint, this has just reduced loss, can as claimed install and use procedure in improve the economic benefit of this clamper.By recess being set to form above-mentioned groove on chuck clamping element surface.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is described in further detail, in accompanying drawing:
Fig. 1 is the total figure for the silicon seed rod holder of polysilicon deposition apparatus;
Fig. 2 is the cross-sectional side view of the silicon seed rod holder for polysilicon deposition apparatus in Fig. 1.
Embodiment
Fig. 1 is the total figure for the silicon seed rod holder of polysilicon deposition apparatus.Wherein, this clamper comprises matrix 1, chuck clamping element 2 and for this matrix 1 being fixed on to the member of polysilicon deposition apparatus, this member is made with the form of nut 3.
Fig. 2 is the cross-sectional side view of the silicon seed rod holder for polysilicon deposition apparatus in Fig. 1.Wherein, except part pointed in Fig. 1, in Fig. 2, also show the installation portion 4 of chuck clamping element 2, clamping section 10 and the groove 11 of the end face 6 of the installation portion 4 of the spatial accommodation 5 of matrix 1, chuck clamping element 2, the recess 7 in end face, heat insulation clearance 8, fit-up gap 9, chuck clamping element 2.Metal current feed 12, metal electrode 13 and the base plate 14 of this polysilicon deposition apparatus have also been described in Fig. 2.
This utility model provides following embodiment:
First, this matrix 1 is arranged on current feed 12 and with nut 3 and fixes.Silicon seed bar butt for polysilicon deposition is inserted to the elongated groove 11 of this chuck clamping element 2.Installation portion 4 is inserted in the spatial accommodation 5 of matrixes 1 to chuck clamping element 2 is arranged in matrix 1.Complete after aforesaid operations, silicon wafer seed bar is compressed and along Z-axis alignment, silicon wafer seed bar can be securely fixed in polysilicon deposition apparatus like this, and can realize the in electrical contact of tight extension.Chuck clamping element 2 is being fit in the process of matrix 1, the existence due to recess 7 between the end face 6 of installation portion 4 of chuck clamping element 2 and the spatial accommodation 5 of matrix 1 has formed fit-up gap 9 and heat insulation clearance 8.The silicon wafer seed bar of required number is fit in the reactor of polysilicon deposition apparatus, seals this reactor, the electric current by this reactor of flowing through heats these silicon wafer seed bars, and initial steam and mixing tank are sent in reactor.Finally, silicon both can be deposited on silicon wafer seed bar and also can be deposited on clamper, and this all depends on the diameter of polycrystalline silicon growth rod.Chuck clamping element 2 is accompanied by the complete hypertrophy of polysilicon, and the diameter of rod surpasses 150mm, and silicon can also be deposited on matrix.After this process completes, polycrystalline silicon rod is grown up and is removed.Nut 3 and matrix 1 can be reused, and still, if there is no deposit spathic silicon on matrix 1, this matrix 1 can be also special-purpose.
Therefore, the utility model provides a kind of silicon seed rod holder for polysilicon deposition apparatus.Because this clamper has best configuration, it can guarantee good heat insulation of silicon wafer seed bar, and then makes the mechanical stress of this silicon wafer seed bar reduce and firmly fix so that the security in polysilicon deposition process and validity are done as a whole being improved.Can also guarantee high conduction and the thermal conductivity between clamper and current feed and grow large diameter polycrystalline silicon rod, also having guaranteed to use this clamper cost-effective simultaneously.
Claims (7)
1. the silicon seed rod holder for polysilicon deposition apparatus, described clamper comprises matrix and chuck clamping element, described chuck clamping element has for holding the groove of silicon seed bar, described chuck clamping element comprises installation portion, in wherein said matrix, be provided with for holding the spatial accommodation of the installation portion of described chuck clamping element, it is characterized in that on the end face of the installation portion of described chuck clamping element, having and can between described matrix and described end face, form the recess of heat insulation clearance.
2. clamper according to claim 1, is characterized in that, the installation portion of described chuck clamping element is contained in the spatial accommodation of described matrix, between the end face of the installation portion of described matrix and described chuck clamping element, forms fit-up gap.
3. clamper according to claim 1, is characterized in that, described clamper comprises for described matrix being fixed on to the member of described polysilicon deposition apparatus.
4. clamper according to claim 1, is characterized in that, the form manufacture for the described member of the matrix of fixing described clamper with nut.
5. clamper according to claim 1, is characterized in that, described matrix is roughly cylindrical, in the bottom of described matrix, has for described matrix being fixed on to the spatial accommodation on the current feed of described polysilicon deposition apparatus.
6. clamper according to claim 1, is characterized in that, described chuck clamping element comprises cone-shaped clamping section.
7. clamper according to claim 1, is characterized in that, described have different diameters for holding the cross section of the groove of silicon seed bar.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UA201205900 | 2012-05-14 | ||
UA201205900 | 2012-05-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203498096U true CN203498096U (en) | 2014-03-26 |
Family
ID=50329094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320242131.1U Expired - Fee Related CN203498096U (en) | 2012-05-14 | 2013-05-07 | Silicon seed crystalline rod holder for polycrystalline silicon deposition device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203498096U (en) |
-
2013
- 2013-05-07 CN CN201320242131.1U patent/CN203498096U/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3150556B1 (en) | Carbon electrode and apparatus for manufacturing polycrystalline silicon rod | |
CN201793374U (en) | Novel silicon core clamping device for polysilicon reduction furnace | |
CN106744975A (en) | A kind of device for eliminating polysilicon carbon head material | |
EP2661516B1 (en) | Chuck for chemical vapor deposition systems and related methods therefor | |
CN204234936U (en) | A kind of discharge tube electrode assemblie brazing jig | |
CN203498096U (en) | Silicon seed crystalline rod holder for polycrystalline silicon deposition device | |
CN102153090A (en) | Boron gettering method for metallurgical N-type polycrystalline silicon chip | |
CN102153089A (en) | Method for gettering phosphorus in N-type polysilicon slice by metallurgical method | |
CN102901668B (en) | The fixing means of cementing antithesis rod in a kind of cementing antithesis rod solidifying frock and coating stretches strength test | |
US20160122875A1 (en) | Chemical vapor deposition reactor with filament holding assembly | |
CN202183364U (en) | Quartz boat used for diffusion | |
CN202824958U (en) | Fixing seat for fixing argon arc welding gun | |
CN213053550U (en) | Pipeline welding clamp | |
CN201412965Y (en) | Graphite carbon fiber electric heater | |
CN210866226U (en) | Graphite boat piece and graphite boat for silicon chip battery coating | |
CN210803355U (en) | Electrode integrated system for molten salt electrochemical test | |
RU125200U1 (en) | MOUNTING BARS HOLDER FOR DEPOSITION OF POLYCRYSTALLINE SILICON | |
CN205474072U (en) | A anchor clamps for electrochemical deposition | |
CN205710983U (en) | A kind of clamp fixture | |
CN102062490B (en) | Fixing device of solar flat panel heat collector | |
CN202543398U (en) | Pad for heater-supporting legs | |
CN215103396U (en) | Fixed tool for quenching machining of milling cutter | |
CN102605434B (en) | Foot pad for heating body support foot | |
CN202371292U (en) | High-temperature high-pressure valve mounting structure | |
CN208869668U (en) | Gas collector under 400 degree of high temperature systems of one kind |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140326 Termination date: 20140507 |