CN203490338U - Ultraviolet avalanche diode testing device - Google Patents

Ultraviolet avalanche diode testing device Download PDF

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Publication number
CN203490338U
CN203490338U CN201320642914.9U CN201320642914U CN203490338U CN 203490338 U CN203490338 U CN 203490338U CN 201320642914 U CN201320642914 U CN 201320642914U CN 203490338 U CN203490338 U CN 203490338U
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CN
China
Prior art keywords
avalanche diode
light source
ultraviolet
ultraviolet avalanche
proving installation
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201320642914.9U
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Chinese (zh)
Inventor
申志辉
罗木昌
周勋
龙维刚
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CETC 44 Research Institute
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CETC 44 Research Institute
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Priority to CN201320642914.9U priority Critical patent/CN203490338U/en
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Publication of CN203490338U publication Critical patent/CN203490338U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

Provided is an ultraviolet avalanche diode testing device. The ultraviolet avalanche diode testing device is in such a structure that: the ultraviolet avalanche diode testing device comprises a light source, a rail, an optical assembly, a clamper, and a shell; the light source, the optical assembly, and the clamper are arranged on the rail in sequence, and connected with rail in a sliding manner; the light source, the optical assembly, and the clamper are wrapped in the shell; and an element to be tested is arranged on the clamper, and connected with testing source meter. The ultraviolet avalanche diode testing device has beneficial effects of being simple in structure, being low in cost, being simple and convenient to operate, and being capable of fulfilling requirements of high efficiency testing for large quantities of elements.

Description

Ultraviolet avalanche diode proving installation
Technical field
The utility model relates to a kind of semiconductor device testing apparatus, relates in particular to a kind of ultraviolet avalanche diode proving installation.
Background technology
Avalanche diode (APD) is high speed, highly sensitive photodiode, compares with PIN photodiode, and APD can measure fainter light signal, and has lower noise.
Ultraviolet avalanche diode is a kind of of avalanche diode, and China starts late for the research of ultraviolet avalanche diode, lacks suitable testing apparatus, and especially optical parametric test macro relies on external import substantially; Because these import equipments are generally all positioned high precision measurement project, cause that equipment price is high, complicated operation, be difficult to meet in enormous quantities, high efficiency conventionally test demand.
Utility model content
For the problem in background technology, the utility model proposes a kind of ultraviolet avalanche diode proving installation, its structure is: described proving installation is comprised of light source, guide rail, optical module, fixture and housing; Light source, optical module and fixture are arranged on guide rail in turn, and light source, optical module and fixture are all slidably connected with guide rail; In housing is wrapped in light source, guide rail, optical module and fixture; To be measured is arranged on fixture, and to be measured is connected with a test source table.
Principle of work of the present invention is: before test, regulate in advance the mutual alignment of light source, optical module and fixture, and fix by locking device.After clamping to be measured, first by the voltage zero setting of test source table, record to be measured the current value I d1 under dark condition, then put bright light source, allow the illumination that light source sends be mapped to be measured above, record to be measured the photogenerated current value Ip1 under zero offset voltage; Increase test source table voltage enlarges markedly to the photogenerated current value of to be measured, and record photogenerated current value Ip2 now, then closes light source, records the dark current value Id2 of to be measured.By the parameter substitution formula M=(Ip2-Id2 being recorded in test process)/(Ip1-Id1) calculate, can obtain to be measured the avalanche gain value M under corresponding bias voltage.
Of the present utility model simple in structure, with low cost, can the position of light source, optical module and fixture be carried out conveniently, be regulated flexibly by guide rail, although its measuring accuracy is not as existing equipment, but operate simply especially, testing efficiency is very high, the conventionally test demand of very applicable device in enormous quantities.
Preferably, described to be measured is ultraviolet avalanche diode.
Preferably, described light source adopts ultraviolet LED.
Preferably, the centre wavelength scope of described ultraviolet LED is 200nm ~ 400nm..
For spacing comparatively accurately, preferably, on described guide rail, be provided with scale.
Preferably, described optical module comprises lens, attenuator and optical slot.During concrete application, those skilled in the art can carry out combination collocation by lens, attenuator and optical slot according to demand, and the mutual alignment of the mutual alignment of lens, attenuator and optical slot and they and light source, fixture all can independent regulation.
Preferably, described housing upper surface is provided with and renovates.
Useful technique effect of the present utility model is: simple in structure, with low cost, operation is very simple, convenient, can meet the demand of device in enormous quantities being carried out to efficient test.
Accompanying drawing explanation
Fig. 1, structural representation of the present utility model;
In figure, the corresponding parts of each mark are respectively: light source 1, guide rail 2, lens 3, attenuator/optical slot 4, to be measured 5, fixture 6, housing 7, test source table 8.
Embodiment
A ultraviolet avalanche diode proving installation, its structure is: described proving installation is comprised of light source 1, guide rail 2, optical module, fixture 6 and housing 7; Light source 1, optical module and fixture 6 are arranged on guide rail 2 in turn, and light source 1, optical module and fixture 6 are all slidably connected with guide rail 2; In housing 7 is wrapped in light source 1, guide rail 2, optical module and fixture 6; To be measured is arranged on fixture 6, and to be measured is connected with a test source table.
Further, described to be measured is ultraviolet avalanche diode.
Further, described light source 1 adopts ultraviolet LED.
Further, the centre wavelength scope of described ultraviolet LED is 200nm ~ 400nm..
Further, on described guide rail 2, be provided with scale.
Further, described optical module comprises lens, attenuator and optical slot.
Further, described housing 7 upper surfaces are provided with and renovate.

Claims (7)

1. a ultraviolet avalanche diode proving installation, is characterized in that: described proving installation is comprised of light source (1), guide rail (2), optical module, fixture (6) and housing (7); It is upper that light source (1), optical module and fixture (6) are arranged at guide rail (2) in turn, and light source (1), optical module and fixture (6) are all slidably connected with guide rail (2); In housing (7) is wrapped in light source (1), guide rail (2), optical module and fixture (6); To be measured is arranged at fixture (6) above, and to be measured is connected with a test source table.
2. ultraviolet avalanche diode proving installation according to claim 1, is characterized in that: described to be measured is ultraviolet avalanche diode.
3. ultraviolet avalanche diode proving installation according to claim 2, is characterized in that: described light source (1) adopts ultraviolet LED.
4. ultraviolet avalanche diode proving installation according to claim 3, is characterized in that: the centre wavelength scope of described ultraviolet LED is 200nm ~ 400nm..
5. ultraviolet avalanche diode proving installation according to claim 1, is characterized in that: described guide rail is provided with scale on (2).
6. ultraviolet avalanche diode proving installation according to claim 1, is characterized in that: described optical module comprises lens, attenuator and optical slot.
7. ultraviolet avalanche diode proving installation according to claim 1, is characterized in that: described housing (7) upper surface is provided with renovates.
CN201320642914.9U 2013-10-18 2013-10-18 Ultraviolet avalanche diode testing device Expired - Lifetime CN203490338U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320642914.9U CN203490338U (en) 2013-10-18 2013-10-18 Ultraviolet avalanche diode testing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320642914.9U CN203490338U (en) 2013-10-18 2013-10-18 Ultraviolet avalanche diode testing device

Publications (1)

Publication Number Publication Date
CN203490338U true CN203490338U (en) 2014-03-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320642914.9U Expired - Lifetime CN203490338U (en) 2013-10-18 2013-10-18 Ultraviolet avalanche diode testing device

Country Status (1)

Country Link
CN (1) CN203490338U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108489709A (en) * 2018-04-13 2018-09-04 厦门实锐光电科技有限公司 A kind of ultraviolet test machine
CN110726919A (en) * 2019-10-25 2020-01-24 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108489709A (en) * 2018-04-13 2018-09-04 厦门实锐光电科技有限公司 A kind of ultraviolet test machine
CN110726919A (en) * 2019-10-25 2020-01-24 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system
CN110726919B (en) * 2019-10-25 2021-10-26 中国电子科技集团公司第四十四研究所 Array APD photoelectric parameter testing system

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Granted publication date: 20140319