CN203456478U - Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor - Google Patents
Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor Download PDFInfo
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- CN203456478U CN203456478U CN201320362250.0U CN201320362250U CN203456478U CN 203456478 U CN203456478 U CN 203456478U CN 201320362250 U CN201320362250 U CN 201320362250U CN 203456478 U CN203456478 U CN 203456478U
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Abstract
The utility model discloses a film system structure capable of achieving almost-complete absorption at an infrared band and based on a heavily-doped semiconductor. According to the film system structure, 10-200 groups of cyclical film systems are deposited on a substrate, each cyclical film system is composed of a heavily-doped semiconductor film layer and a sull layer, the multi-layer film system structure has the almost-complete feature that the absorptivity reaches 99% at the specific infrared band. The film system structure capable of achieving almost-complete absorption at the infrared band and based on the heavily-doped semiconductor has the advantages of being simple in technology, low in cost, insensitive to deviation and the angle, good in controllability, good in harmony, capable of growing in a large area, mature in nano-fabrication technology, and capable of having a broad application prospect in the fields of detectors, space discrimination and the like.
Description
Technical field
This patent relates to semi-conducting material technology, specifically refers to a kind of based on the nearly film structure absorbing completely of heavily-doped semiconductor infrared band.
Background technology
Along with the high speed development of information technology, electromagnetic material has produced more and more extensively and the impact of the degree of depth fields such as current information, national defence, economy, medical science.In recent years, absorbing closely completely in novel artificial electromagnetic material obtained paying close attention to more and more widely, and is applied to the fields such as heat radiator, detector, transducer, spatial discrimination.This patent has proposed to be used in the multilayer preparation method that periodically film is in the fields such as detector, spatial discrimination for the nearly absorption techniques completely of infrared band.
All the time, construct a kind of metal-insulator-metal type plural layers and be the mainstream thoughts in nearly absorption techniques completely in surface etch periodic structure.And realize at infrared band, absorb closely completely, the periodic structure of material surface must be in the scope of hundreds of nanometers, and the structure of cycle inside has specific requirement, high-precision etching in minor cycle of metal surface is to be difficult to carry out large-area etching, becomes a large obstacle that hinders the development of the nearly absorption techniques completely of infrared band.In spatial discrimination field, it is an important parameter of the direct spatial discrimination of passing judgment on that little pixel large area is arranged.Heavily-doped semiconductor infrared band have with metal species like character, and compare metal, there is dielectric constant adjustable, the advantage such as nanofabrication technique is ripe, and harmony is good, therefore heavily-doped semiconductor replaces metal in recent years, builds novel artificial electromagnetic material and is paid close attention to widely.This patent utilizes heavily-doped semiconductor to build multilayer periodicity film system and has realized absorbing closely completely of infrared band, in detector, spatial discrimination field, has potential application prospect.
Summary of the invention
The object of this patent is to provide a kind of periodically film structure of the nearly multilayer absorbing completely of infrared band of realizing, and preparation method realizes simply again large area deposition.
The method of this patent is on the smooth substrate of arbitrary surfaces, to utilize method growth heavily-doped semiconductor film and the oxide multilayered periodicity film system of vapour deposition, liquid deposition and sputter.
The film structure closely absorbing completely based on heavily-doped semiconductor infrared band that this patent is related, is characterized in that:
Described is 2 based on the nearly film structure absorbing completely of heavily-doped semiconductor infrared band for deposit 10-200 group cycle film on substrate 1;
Described substrate 1 adopts semiconductor wafer, glass or metal;
Described cycle film is 2 heavily-doped semiconductor thin layer 2-1 and oxide film layer 2-2, to consist of; Heavily-doped semiconductor thin layer 2-1 is the material adulterated al zinc oxide of attaching most importance to, the heavy doping wide bandgap semiconductor film of heavy doping gallium zinc oxide or heavy doping indium titanium oxide, and its carrier concentration is 10
19-10
21cm
-3, film thickness is 20nm-200nm; Oxide film layer 2-2 is zinc oxide, aluminium oxide, titanium oxide or silicon oxide film, and film thickness is 5nm-200nm.
Described is with vapour deposition, the preparation of liquid deposition goods sputtering method based on the nearly film structure absorbing completely of heavily-doped semiconductor infrared band.
The advantage of this patent is: technique is simple, and cost is low, and polarization is insensitive, and angle is insensitive, and controllability is good, and harmony is high, can large area deposition, and nanofabrication technique is ripe.
Accompanying drawing explanation
Fig. 1: multilayer is the schematic diagram of film structure periodically.
Fig. 2: multilayer is the reflection and transmission spectrum of film structure periodically.
Fig. 3: multilayer is the absorption spectra of film structure periodically.
Embodiment:
Embodiment 1:
At 25 ℃ of temperature, utilize 200 cycle plural layers of sol-gel method alternating growth heavy doping aluminum zinc oxide and titanium oxide, wherein, the heavy doping aluminum zinc oxide monolayer film thickness of preparation is about 20nm carrier concentration and reaches 1019, and titanium oxide monolayer film thickness is about 200nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 2:
In temperature, be under 275 ℃ of vacuum environments, utilize magnetron sputtering method alternately to prepare heavy doping zinc oxide and 10 cycle plural layers of aluminium oxide, wherein the heavy doping aluminum zinc oxide monolayer film thickness of preparation is about 200nm, and carrier concentration reaches 10
21, aluminum oxide film film thickness is about 5nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 3:
In temperature, be in 190 ℃ of situations, utilize vapour deposition (as ald) method alternating growth heavy doping aluminum zinc oxide and 10 cycle of zinc oxide plural layers, wherein heavy doping aluminum zinc oxide monolayer film thickness is about 100nm, and carrier concentration reaches 10
20, zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 4:
In temperature, be in 190 ℃ of situations, utilize vapour deposition (metal organic chemical vapor deposition) method alternating growth heavy doping aluminum zinc oxide and 16 cycle of zinc oxide plural layers, wherein heavy doping aluminum zinc oxide monolayer film thickness is about 57nm, and carrier concentration reaches 10
20, zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 5:
In temperature, be in 200 ℃ of situations, utilize vapour deposition (as ald) method alternating growth heavy doping aluminum zinc oxide and titanium oxide cycle plural layers, wherein heavy doping aluminum aluminum oxide monolayer film thickness is about 60nm, and carrier concentration reaches 10
20, titanium oxide monolayer film thickness is about 20nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 6:
In temperature, be in 190 ℃ of situations, utilize vapour deposition (metal organic chemical vapor deposition) method alternating growth heavy doping indium titanium oxide and 200 cycle of zinc oxide plural layers, wherein heavy doping indium titanium oxide monolayer film thickness is about 100nm, and carrier concentration reaches 10
19, zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Embodiment 7:
At 25 ℃ of temperature, utilize 50 cycle plural layers of sol-gel method alternating growth heavy doping gallium zinc oxide and silica, wherein, the heavy doping gallium zinc oxide monolayer film thickness of preparation is about 100nm, and heavy doping gallium zinc-oxide film carrier concentration reaches 10
20, silica monolayer film thickness is about 10nm.The final multilayer periodicity film structure with the nearly absorption characteristic completely of infrared band that obtains.
Claims (1)
1. based on the nearly film structure absorbing completely of heavily-doped semiconductor infrared band, its structure is in substrate (1) upper deposition many groups cycle film system (2), it is characterized in that:
Described is in substrate (1) upper deposition 10-200 group cycle film system (2) based on the nearly film structure absorbing completely of heavily-doped semiconductor infrared band;
Described substrate (1) adopts semiconductor wafer, glass or metal;
Described cycle film system (2) consists of heavily-doped semiconductor thin layer (2-1) and oxide film layer (2-2); Heavily-doped semiconductor thin layer (2-1) is the material adulterated al zinc oxide of attaching most importance to, the heavy doping wide bandgap semiconductor film of heavy doping gallium zinc oxide or heavy doping indium titanium oxide, and film thickness is 20nm-200nm; Oxide film layer (2-2) is zinc oxide, aluminium oxide, titanium oxide or silicon oxide film, and film thickness is 5nm-200nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320362250.0U CN203456478U (en) | 2013-06-21 | 2013-06-21 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320362250.0U CN203456478U (en) | 2013-06-21 | 2013-06-21 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
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| CN203456478U true CN203456478U (en) | 2014-02-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325864A (en) * | 2013-06-21 | 2013-09-25 | 中国科学院上海技术物理研究所 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
-
2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325864A (en) * | 2013-06-21 | 2013-09-25 | 中国科学院上海技术物理研究所 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20160621 |
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| CF01 | Termination of patent right due to non-payment of annual fee |