CN103325864A - Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor - Google Patents
Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor Download PDFInfo
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- CN103325864A CN103325864A CN2013102517111A CN201310251711A CN103325864A CN 103325864 A CN103325864 A CN 103325864A CN 2013102517111 A CN2013102517111 A CN 2013102517111A CN 201310251711 A CN201310251711 A CN 201310251711A CN 103325864 A CN103325864 A CN 103325864A
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Abstract
The invention discloses a film system structure capable of achieving almost-complete absorption at an infrared band and based on a heavily-doped semiconductor. According to the film system structure, 10-200 groups of cyclical film systems are deposited on a substrate, each cyclical film system is composed of a heavily-doped semiconductor film layer and a sull layer, the multi-layer film system structure has the almost-complete feature that the absorptivity reaches 99% at the specific infrared band. The film system structure capable of achieving almost-complete absorption at the infrared band and based on the heavily-doped semiconductor has the advantages of being simple in technology, low in cost, insensitive to deviation and the angle, good in controllability, good in harmony, capable of growing in a large area, mature in nano-fabrication technology, and capable of having a broad application prospect in the fields of detectors, space discrimination and the like.
Description
Technical field
The present invention relates to the semi-conducting material technology, specifically refer to a kind of based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band.
Background technology
Along with the high speed development of information technology, electromagnetic material has produced more and more extensively and the influence of the degree of depth fields such as current information, national defence, economy, medical science.In recent years, the near absorption fully in the novel artificial electromagnetic material obtained concern more and more widely, and is applied to fields such as heat radiator, detector, transducer, spatial discrimination.The present invention is directed to the periodically preparation method of film system of multilayer that the nearly absorption techniques fully of infrared band proposed to be used in fields such as detector, spatial discrimination.
All the time, construct a kind of metal-insulator-metal type plural layers and be main flow thought in the nearly absorption techniques fully in the surface etch periodic structure.And realize absorbing closely fully at infrared band, the periodic structure of material surface must be in the scope of hundreds of nanometers, and the structure of cycle inside has specific requirement, high-precision etching in minor cycle of metal surface is to be difficult to carry out large-area etching, becomes a big obstacle that hinders the development of the nearly absorption techniques fully of infrared band.In the spatial discrimination field, it is an important parameter of the direct spatial discrimination of passing judgment on that little pixel large tracts of land is arranged.Heavily-doped semiconductor infrared band have with metal species like character, and compare metal dielectric-constant adjustable is arranged, nanofabrication technique maturation, advantage such as harmony is good, therefore heavily-doped semiconductor replaces metal in recent years, makes up the novel artificial electromagnetic material and is paid close attention to widely.The present invention utilizes heavily-doped semiconductor to make up multilayer periodicity film system and has realized absorbing closely fully of infrared band, has potential application prospect in detector, spatial discrimination field.
Summary of the invention
The purpose of this invention is to provide a kind of periodically film structure of the nearly multilayer that absorbs fully of infrared band of realizing, the preparation method realizes large area deposition simply again.
Method of the present invention is to utilize method growth heavily-doped semiconductor film and the oxide multilayered periodicity film system of vapour deposition, liquid deposition and sputter at the smooth substrate of arbitrary surfaces.
Involved in the present invention based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band, it is characterized in that:
Described is 2 based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band for organizing the cycle film at substrate 1 deposition 10-200;
Described substrate 1 adopts semiconductor wafer, glass or metal;
Described cycle film is 2 to be made of heavily-doped semiconductor thin layer 2-1 and oxide film layer 2-2; Heavily-doped semiconductor thin layer 2-1 is the heavy doping aluminum zinc oxide, heavy doping gallium zinc oxide or heavy doping indium titanium oxide heavy doping wide bandgap semiconductor film, and its carrier concentration is 10
19-10
21Cm
-3, film thickness is 20nm-200nm; Sull 2-2 is zinc oxide, aluminium oxide, titanium oxide or silicon oxide film, and film thickness is 5nm-200nm.
Described is with vapour deposition, the preparation of liquid deposition goods sputtering method based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band.
Advantage of the present invention is: technology is simple, and cost is low, and polarization is insensitive, and angle is insensitive, and controllability is good, harmony height, but large area deposition, nanofabrication technique maturation.
Description of drawings
Fig. 1: multilayer is the schematic diagram of film structure periodically.
Fig. 2: multilayer is the reflection and transmission spectrum of film structure periodically.
Fig. 3: multilayer is the absorption spectra of film structure periodically.
Embodiment:
Embodiment 1:
Under 25 ℃ of temperature, utilize 200 cycle plural layers of sol-gel method alternating growth heavy doping aluminum zinc oxide and titanium oxide, wherein, the heavy doping aluminum zinc oxide monolayer film thickness of preparation is about the 20nm carrier concentration and reaches 10
19, the titanium oxide monolayer film thickness is about 200nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 2:
Be under 275 ℃ of vacuum environments in temperature, utilize magnetron sputtering method alternately to prepare heavy doping zinc oxide and 10 cycle plural layers of aluminium oxide, wherein Zhi Bei heavy doping aluminum zinc oxide monolayer film thickness is about 200nm, and carrier concentration reaches 10
21, the aluminum oxide film film thickness is about 5nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 3:
Be under 190 ℃ of situations in temperature, utilize vapour deposition (as ald) method alternating growth heavy doping aluminum zinc oxide and 10 cycle of zinc oxide plural layers, wherein heavy doping aluminum zinc oxide monolayer film thickness is about 100nm, and carrier concentration reaches 10
20, the zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 4:
Be under 190 ℃ of situations in temperature, utilize vapour deposition (metal organic chemical vapor deposition) method alternating growth heavy doping aluminum zinc oxide and 16 cycle of zinc oxide plural layers, wherein heavy doping aluminum zinc oxide monolayer film thickness is about 57nm, and carrier concentration reaches 10
20, the zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 5:
Be under 200 ℃ of situations in temperature, utilize vapour deposition (as ald) method alternating growth heavy doping aluminum zinc oxide and titanium oxide cycle plural layers, wherein heavy doping aluminum aluminum oxide monolayer film thickness is about 60nm, and carrier concentration reaches 10
20, the titanium oxide monolayer film thickness is about 20nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 6:
Be under 190 ℃ of situations in temperature, utilize vapour deposition (metal organic chemical vapor deposition) method alternating growth heavy doping indium titanium oxide and 200 cycle of zinc oxide plural layers, wherein heavy doping indium titanium oxide monolayer film thickness is about 100nm, and carrier concentration reaches 10
19, the zinc oxide monolayer film thickness is about 60nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Embodiment 7:
Under 25 ℃ of temperature, utilize 50 cycle plural layers of sol-gel method alternating growth heavy doping gallium zinc oxide and silica, wherein, the heavy doping gallium zinc oxide monolayer film thickness of preparation is about 100nm, and heavy doping gallium zinc-oxide film carrier concentration reaches 10
20, the silica monolayer film thickness is about 10nm.The final multilayer periodicity film structure that obtains to have the nearly absorption characteristic fully of infrared band.
Claims (1)
1. one kind based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band, and its structure be that to deposit many groups cycle film at substrate (1) be (2), it is characterized in that:
Described is in substrate (1) deposition 10-200 group cycle film system (2) based on the nearly film structure that absorbs fully of heavily-doped semiconductor infrared band;
Described substrate (1) adopts semiconductor wafer, glass or metal;
Described cycle film system (2) is made of heavily-doped semiconductor thin layer (2-1) and oxide film layer (2-2); Heavily-doped semiconductor thin layer (2-1) is the heavy doping aluminum zinc oxide, heavy doping gallium zinc oxide or heavy doping indium titanium oxide heavy doping wide bandgap semiconductor film, and its carrier concentration is 10
19-10
21Cm
-3, film thickness is 20nm-200nm; Sull (2-2) is zinc oxide, aluminium oxide, titanium oxide or silicon oxide film, and film thickness is 5nm-200nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013102517111A CN103325864A (en) | 2013-06-21 | 2013-06-21 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
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| CN2013102517111A CN103325864A (en) | 2013-06-21 | 2013-06-21 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051553A (en) * | 2014-06-17 | 2014-09-17 | 中国科学院上海光学精密机械研究所 | High-absorptivity solar thin film |
| CN104466427A (en) * | 2014-12-24 | 2015-03-25 | 中国计量学院 | Efficient broadband terahertz wave absorption device based on highly-doped silicon materials |
| CN111739972A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method thereof |
| CN112526663A (en) * | 2020-11-04 | 2021-03-19 | 浙江大学 | Atomic layer deposition-based absorption film and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070013998A1 (en) * | 2005-07-12 | 2007-01-18 | Kuohua Wu | IR absorbing reflector |
| CN203456478U (en) * | 2013-06-21 | 2014-02-26 | 中国科学院上海技术物理研究所 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
-
2013
- 2013-06-21 CN CN2013102517111A patent/CN103325864A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070013998A1 (en) * | 2005-07-12 | 2007-01-18 | Kuohua Wu | IR absorbing reflector |
| CN203456478U (en) * | 2013-06-21 | 2014-02-26 | 中国科学院上海技术物理研究所 | Film system structure capable of achieving almost-complete absorption at infrared band and based on heavily-doped semiconductor |
Non-Patent Citations (1)
| Title |
|---|
| YUN ZHANG ET AL.: "Near-perfect infrared absorption from dielectric multilayer of plasmonic aluminum-doped zinc oxide", 《APPL. PHYS. LETT.》, vol. 102, no. 21, 31 May 2013 (2013-05-31), XP012173235, DOI: doi:10.1063/1.4808206 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051553A (en) * | 2014-06-17 | 2014-09-17 | 中国科学院上海光学精密机械研究所 | High-absorptivity solar thin film |
| CN104466427A (en) * | 2014-12-24 | 2015-03-25 | 中国计量学院 | Efficient broadband terahertz wave absorption device based on highly-doped silicon materials |
| CN111739972A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method thereof |
| CN111739972B (en) * | 2020-07-01 | 2023-11-10 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method |
| CN112526663A (en) * | 2020-11-04 | 2021-03-19 | 浙江大学 | Atomic layer deposition-based absorption film and manufacturing method thereof |
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Application publication date: 20130925 |