Utility model content
The purpose of this utility model is the problem that the assembly program that solves lens subassembly in prior art has the pin-point accuracy of too many treatment step, complicated structure, the processing of difficulty and mounting equipment that need to be such as P & P equipment.
To achieve these goals, embodiment of the present utility model provides a kind of electronic equipment, comprising:
Substrate, comprises dielectric layer and a plurality of conductive traces on described dielectric layer;
Image sensor IC on described substrate; And
Lens subassembly above described substrate, comprising:
Sept above described substrate,
The first tack coat on described sept,
Aim at described image sensor IC and at least one lens on described the first tack coat,
Around the second tack coat of the peripheral surface of described at least one lens and described the first tack coat, and
Shading piece on described at least one lens and described the second tack coat.
Preferably, wherein said sept, described the second tack coat and described shading piece have the peripheral surface of aligning.
Preferably, wherein said the second tack coat comprises opaque material.
Preferably, another integrated circuit that also comprises contiguous described substrate; And wherein said at least one lens comprise the first lens of aiming at described image sensor IC and the second lens of aiming at described another integrated circuit.
Preferably, wherein said another integrated circuit comprises at least one in light source integrated circuit and additional image sensor IC.
Preferably, wherein said at least one lens comprise the base layers with first-phase offside and second-phase offside, the convex lens layer on described first-phase offside, and the concavees lens layer on described second-phase offside.
Preferably, be also included in the 3rd tack coat between described substrate and described lens subassembly.
Preferably, wherein said substrate is included on described dielectric layer and is coupled to a plurality of conductive contacts of described a plurality of conductive traces.
Preferably, wherein said at least one lens comprise filter lens.
Embodiment of the present utility model also provides a kind of lens subassembly for electronic equipment, described electronic equipment has substrate and the image sensor IC on described substrate that comprises dielectric layer and a plurality of conductive traces on described dielectric layer, and described lens subassembly comprises:
Sept above described substrate;
The first tack coat on described sept;
Aim at described image sensor IC and at least one lens on described the first tack coat;
The second tack coat around the peripheral surface of described at least one lens and described the first tack coat; And
Shading piece on described at least one lens and described the second tack coat.
Preferably, wherein said sept, described the second tack coat and described shading piece have the peripheral surface of aligning.
Preferably, wherein said the second tack coat comprises opaque material.
Preferably, wherein said at least one lens comprise the base layers with first-phase offside and second-phase offside, the convex lens layer on described first-phase offside, and the concavees lens layer on described second-phase offside.
Advantageously, embodiment of the present utility model is more more fixing and mechanically firm than existing mode.In addition, this embodiment is structurally more uncomplicated, and more easily/cheapness is manufactured, and less dimensionally.In addition, the mechanical strength of increase allows the operation of P & P faster and has the risk of less damage parts.In addition, disclosed herein for the manufacture of wafer level process lower loss of yield can also be provided.
Embodiment
Now with reference to the accompanying drawings the disclosure is below being described more fully, at these shown in the drawings of embodiment of the present disclosure.Yet the disclosure can embody in many different forms, and should not be construed as limited to the embodiment stating herein.On the contrary, provide these embodiment, making the disclosure will be thorough and complete; And will fully pass on the scope of the present disclosure to those skilled in the art.Identical label represents identical element in the whole text, and slash symbol is used to indicate element similar in alternative embodiment.
Generally speaking, electronic equipment can comprise the substrate of a plurality of conductive traces that comprise dielectric layer and carried by dielectric layer, by the image sensor IC of substrate supporting, and the lens subassembly above substrate.Lens subassembly can be included in sept, first tack coat being carried by sept of substrate top, at least one lens of aiming at image sensor IC and being carried by the first tack coat, around the second tack coat of the peripheral surface of at least one lens and the first tack coat, and the shading piece being carried by least one lens and the second tack coat.Advantageously, lens subassembly can be mechanically firm and be easy to manufacture.
Particularly, sept, the second tack coat and shading piece have the peripheral surface of aligning.The second tack coat can comprise opaque material.
In certain embodiments, electronic equipment can also comprise another IC by substrate supporting, and at least one lens can comprise the first lens of aiming at image sensor IC and the second lens of aiming at another IC.Another IC can comprise at least one in light source IC and additional image sensor IC.
In addition, at least one lens can comprise there is the base layers of the first and second opposite sides, the convex lens layer on first-phase offside, and the concavees lens layer on second-phase offside.Electronic equipment can also be included in the 3rd tack coat between substrate and lens subassembly.Substrate can comprise a plurality of conductive contacts that carried and be coupled to a plurality of conductive traces by dielectric layer.For example, at least one lens can comprise filter lens.
Relate on the other hand the method for making a plurality of lens subassemblies.The method can comprise utilizes the first tack coat that lens wafers (lens wafer) adhesive bond is arrived to sept wafer, wherein lens wafers comprises a plurality of lens, and forming a plurality of depressions (recess) of extending and entering sept wafer through lens wafers and the first tack coat, each is recessed between adjacent lens.The method can comprise utilize the second tack coat fill depression, by shading piece wafer adhesive bond to the second tack coat, and the sept wafer being bonded together, lens wafers and shading piece wafer are carried out to cutting-up to limit a plurality of lens subassemblies.
In addition, sept wafer can comprise a plurality of openings, and lens wafers adhesive bond can be comprised a plurality of openings and a plurality of lens alignment to sept wafer.The method also comprises that lens wafers and the sept wafer to being bonded together is cured.Shading piece wafer can comprise a plurality of openings, and shading piece wafer adhesive bond can be comprised a plurality of openings and a plurality of lens alignment to lens wafers and sept wafer.The method can also be included in and in carrier layer, form sept wafer, and after cutting-up release vehicle layer.
Relate on the other hand the method for making electronic equipment, the method comprises the substrate that forms a plurality of conductive traces that comprise dielectric layer and carried by dielectric layer.The method can comprise the image sensor IC forming by substrate supporting, and is formed on the lens subassembly of substrate top.Lens subassembly can be included in sept, first tack coat being carried by sept of substrate top, at least one lens of aiming at image sensor IC and being carried by the first tack coat, around the second tack coat of the peripheral surface of at least one lens and the first tack coat, and the shading piece being carried by least one lens and the second tack coat.
Referring now to Fig. 2, describe according to electronic equipment 40 of the present disclosure now.Electronic equipment 40 can comprise proximity detector equipment in certain embodiments.
Electronic equipment 40 comprises substrate 46 illustratively, this substrate comprises (for example comprising silicon, GaAs) dielectric layer 48, and for example, by (comprising copper or aluminium) a plurality of conductive traces 50 of dielectric layer carrying (on dielectric layer).Substrate 46 comprises illustratively by dielectric layer carrying (on dielectric layer) and is coupled to (for example comprising copper or aluminium) a plurality of conductive contact 49a-49b of a plurality of conductive traces 50.For example, a plurality of conductive contact 49a-49b can comprise ball grid array (BGA) or illustrated grid array (LGA) conductive contact.
Electronic equipment 40 comprises the image sensor IC 51 by substrate 46 carryings (on it) illustratively.Image sensor IC 51 comprises image sensing surface 52, and image sensing surface comprises a plurality of sensor pixels.Substrate 46 comprises (comprising copper or aluminium) a plurality of Bonding 53a-53b, and this bonding is coupled to a plurality of conductive traces 50 by image sensor IC 51.In other words, the image sensor IC in illustrated embodiment 51 is front photosensitive type imageing sensors.In other embodiments, image sensor IC 51 can comprise back side photosensitive type imageing sensor.
Electronic equipment 40 comprises the lens subassembly 70 of substrate 46 tops illustratively, and the 3rd tack coat 47 between substrate and lens subassembly.Lens subassembly 70 is included in the sept 44 of substrate 46 tops illustratively, by the first tack coat 45 of sept carrying (on it), and the lens 41 of aiming at and carried by the first tack coat (on it) with image sensor IC 51.The first tack coat 45 is bonded together sept 44 and lens 41.
In addition, lens 41 comprise base layers (base layer) 56, the convex lens layer 54 on first-phase offside with the first and second opposite sides illustratively, and the concavees lens layer 55 on second-phase offside.For example, lens 41 can comprise (for example filtering infrared radiation) filter lens.
Lens subassembly 70 comprises illustratively around the second tack coat 43 of the peripheral surface 82a-82b of lens 41 and the first tack coat 45.The second tack coat 43 is also physically secured to sept 44 by lens 41.In certain embodiments, the second tack coat 43 can comprise opaque material, and the light isolation that this can provide side direction, prevents crosstalking between adjacent detector (Fig. 3-4).Particularly, the second 43 pairs of tack coats both visible electromagnetic radiation non-conducting, provides the better accuracy of electronic equipment 40 by this.
Lens subassembly 70 comprises the shading piece 42 by lens 41 and the second tack coat 43 carryings (thereon) illustratively.The second tack coat 43 is firm shading piece 42 and provide downwards the mode of blocking (retaining) for lens 41 physically.Particularly, sept 44, the second tack coat 43 and shading piece 42 have the peripheral surface 81a-81b of aligning illustratively, advantageously provide by this side profile of tiny (slim).The second tack coat 43 can provide for lens subassembly 70 lateral edge of mechanical elasticity.In addition, shading piece 42 and sept 44 be also to both visible electromagnetic radiation non-conducting, and can comprise same material.
Electronic equipment 40 can comprise the controller that is coupled to image sensor IC 51.In the embodiment of proximity detector equipment, controller can be carried out for the proximity test operation near object.
Now, separately with reference to Fig. 3, another embodiment of electronic equipment 40 ' is described now.In this embodiment of electronic equipment 40 ', on those elements of having discussed in conjunction with Fig. 2 be given and skim symbol and most of without further discussing at this.The difference of this embodiment and a upper embodiment is that this electronic equipment 40 ' comprises first and second lens subassembly 70a '-70b ' illustratively.Electronic equipment 40 ' also comprises first and second IC51a '-51b ' by substrate 46 ' carrying (on it) illustratively.In certain embodiments, an IC51a ' can comprise image sensor IC, and the 2nd IC51b ' can comprise another kind of IC.
First lens assembly 70a ' comprise illustratively with an IC51a ' aim at first lens 41a ', and the second lens subassembly 70b ' comprises the second lens 41b ' aiming at the 2nd IC51b ' illustratively.The 2nd IC51b ' can comprise for example, in light source IC (light-emitting diode (LED) light source IC) and additional image sensor IC at least one.
In illustrated embodiment, first lens assembly 70a ' and the second lens subassembly 70b ' are integrated into one.Particularly, the neighbouring part of shading piece 42 ', second tack coat 43a '-43b ' and sept 44a '-44b ' is integrated.
Prior art mode with reference to Fig. 1, may there are some defects in which, comprising: assembly program has the pin-point accuracy of too many treatment step, complicated structure, the processing (handling) of difficulty and mounting equipment that need to be such as P & P equipment.Advantageously, this embodiment ratio is such as more fixing and mechanically firm in the disclosed existing mode of Fig. 1.In addition, this embodiment is structurally more uncomplicated, and more easily/cheapness is manufactured, and less dimensionally.In addition, the mechanical strength of increase allows the operation of P & P faster and has the risk of less damage parts.In addition, disclosed herein for the manufacture of wafer level process lower loss of yield can also be provided.
Now, separately with reference to Fig. 4, electronic equipment 40 is described now " another embodiment.At electronic equipment 40 " this embodiment in, on those elements of having discussed in conjunction with Fig. 2 be given two symbols and most of without further discussing at this of skimming.The difference of this embodiment and above embodiment is this electronic equipment 40 " comprise illustratively the first, second, third and the 4th lens subassembly 70a "-70d ".Electronic equipment 40 " also comprise illustratively by substrate 46 " carrying (on it) the first, second, third and the 4th IC51a "-51d ".In certain embodiments, the first, second, third and the 4th IC51a "-51d " can comprise the combination of image sensor IC or image sensor IC and light source (or other optical IC).The other first, second, third and the 4th IC51a "-51d " comprise other special optical object IC.In a favourable embodiment, the first, second, third and the 4th IC51a "-51d " in each comprise image sensor IC, and the first, second, third and the 4th lens subassembly 70a "-70d " the vicissitudinous focusing of tool is from for providing senior proximity test respectively.In another embodiment, lens subassembly 70a "-70d " can in the matrix lens component application such as 1x3,1x4,2x2,4x4 and NxN, use.
Referring now to Fig. 5-13, electronic equipment 40,40 ' lens subassembly 70, the method for 70a '-70b ' of making described now.As understood, disclosed method is wafer level technique, although and illustrated embodiment the assembly module of lens and the assembly module of two lens are provided, this technique can be modified to provide the lens subassembly of larger quantity easily.
The method comprises illustratively provides carrier layer 61 and the bonding releasing layer 62 in carrier layer.The method comprises illustratively carrier layer 61 and sept wafer 44 is bonded together, and on sept wafer, forms the first adhesive linkage 45.Sept wafer 44 comprises a plurality of depression/opening 67a-67c illustratively, and this can carry out or form (for example (machinery or laser) milling and etching) before being attached to carrier layer 61.
The method comprise illustratively utilize the first tack coat 45 by lens wafers 56 adhesive bond to sept wafer 44.Lens wafers 56 can comprise glass base portion, or can comprise similar transparent material.Lens wafers 56 comprises a plurality of lens 41a-41c that aim at respectively with a plurality of depression 67a-67c of sept wafer 44 illustratively.In other words, lens wafers 56 adhesive bond can be comprised a plurality of opening 67a-67c are aimed at a plurality of lens 41a-41c to sept wafer 44.In certain embodiments, the method can also comprise that lens wafers 56 and sept wafer 44 to being bonded together are cured.
The method comprises and forms a plurality of depression 65a-65d that extend and enter sept wafer 44 through lens wafers 56 and the first tack coat 45, and wherein each is recessed between adjacent lens 41a-41c.In illustrated embodiment, a plurality of depression 65a-65d form via cutting-up blade 63.In other embodiments, for example can form a plurality of depression 65a-65d with etching technique or milling.
The method comprises utilizes the second tack coat 43a-43d to fill depression 65a-65d.In illustrated embodiment, the second tack coat 43a-43d distributes via nozzle 64.As shown, the second tack coat 43a-43d extends beyond the upper surface of lens wafers 56.The method comprises shading piece wafer 42 adhesive bond to the second tack coat 43a-43d.Shading piece wafer 42 comprises a plurality of openings illustratively, and shading piece wafer adhesive bond is comprised a plurality of openings are aimed at a plurality of lens 41a-41c to lens wafers 56 and sept wafer 44.
The method also comprises that sept wafer 44, lens wafers 56 and shading piece wafer that (using illustrated cutting-up blade 66) singualtion or cutting-up be bonded together are to limit a plurality of lens subassembly 70a-70c.The method is for example also included in after cutting-up illustratively by the dissolving releasing layer 62 that bonds carrys out release vehicle layer 61.Wafer level process disclosed herein can provide good versatility, and this is due to the wafer product completing, to comprise the two-dimensional array of a large amount of lens subassembly 70a-70c.Depend on the application of tendency, can self-defined singualtion step provide the configuration of wanting, be i.e. single (Fig. 2), two (Fig. 3) or matrix arrangements.
Relate on the other hand the method for making electronic equipment 40, comprise and form the substrate 46 that comprises dielectric layer 48 and carried a plurality of conductive traces 50 of (on dielectric layer) by dielectric layer.The method can comprise the image sensor IC 51 forming by substrate 46 carryings (on it), and is formed on the lens subassembly 70 of substrate 46 tops.Lens subassembly 70 can be included in substrate 46 tops sept 44, by the first tack coat 45 of sept carrying (on it), aims at image sensor IC 51 and by the first tack coat carry at least one lens 41 of (on it), around the second tack coat 43 of the peripheral surface 82a-82b of at least one lens and the first tack coat and the shading piece 42 that is carried (on it) by least one lens and the second tack coat.
Have benefited from the instruction presenting in aforementioned specification and relevant drawings, those skilled in the art will expect many modifications of the present disclosure and other embodiment.Therefore, should be understood that the disclosure is not limited to disclosed specific embodiment, and be intended to modification and embodiment to comprise within the scope of the appended claims.