CN203415580U - Electrode structure of power semiconductor chip - Google Patents
Electrode structure of power semiconductor chip Download PDFInfo
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- CN203415580U CN203415580U CN201320478215.5U CN201320478215U CN203415580U CN 203415580 U CN203415580 U CN 203415580U CN 201320478215 U CN201320478215 U CN 201320478215U CN 203415580 U CN203415580 U CN 203415580U
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- electrode slice
- power semiconductor
- semiconductor chip
- destressing
- electrode structure
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Abstract
The utility model discloses an electrode structure of a power semiconductor chip. The electrode structure comprises an electrode slice, the electrode slice comprises an electrode slice body and a current output end, and a group of destressing grooves is formed in the electrode slice body, wherein the destressing grooves are arranged at two opposite sides of the electrode slice body in a staggered manner. The electrode structure of the power semiconductor chip solves the problem that crack of a silicon chip due to thermal expansion is likely to happen in the electrode slice made of common metal and the silicon chip because difference between the expansion coefficients of the metal and the silicon chip is great, the structure is simple, processing is convenient, the structure of the electrode slice can be adjusted according the output current, and the electrode structure can be widely applied to the field of power semiconductor chips.
Description
Technical field
The utility model relates to a kind of power semiconductor chip, relates in particular to a kind of power semiconductor chip electrode structure.
Background technology
High power semi-conductor chip is provided with upper/lower electrode, and the selected material of electrode approaches with silicon chip coefficient of linear expansion as far as possible, pyroconductivity material higher, that resistivity is low, as molybdenum sheet, tungsten.But molybdenum, tungsten material price are high, belong to rare metal.For reducing costs, can select common metal, such as copper, iron etc.Copper has advantages of than the better pyroconductivity of molybdenum, low resistivity.But it is large that shortcoming is coefficient of linear expansion, only adapt to the upper/lower electrode of making small-power chip, copper price is approximately 20 percent of molybdenum.
Therefore, need to consider how common metal is carried out to structural improvement, solve because coefficient of linear expansion is large and silicon chip mismatch problem.
Utility model content
The purpose of this utility model is to provide a kind of power semiconductor chip electrode structure, solves common metal and silicon chip coefficient of expansion difference large, the problem of silicon chip thermal expansion drawing crack.
The utility model solves the technical scheme that its technical problem adopts: a kind of power semiconductor chip electrode structure, comprise electrode slice, and described electrode slice comprises electrode slice body and current output terminal; On described electrode slice body, be provided with one group of destressing groove.
Preferably, described destressing groove is arranged on electrode slice body two opposite side, and the destressing groove Heterogeneous Permutation on two opposite side.
Further, described electrode slice is copper sheet, and the hem width of described electrode slice body is 2～8mm, and described is 2～6mm with the distance between the upper adjacent two destressing grooves in one side.The width of described destressing groove is 0.1～3mm, destressing groove depth 2～8mm.
Preferably, the hem width of described electrode slice body is 5mm, and described is 4mm with the distance between the upper adjacent two destressing grooves in one side.The width of described destressing groove is 0.7mm, destressing groove depth 3mm.
For meeting the requirement of different electric current output to electrode slice, described electrode slice at least arranges one group of electrode slice body, and the output size of the number of described electrode slice body and power semiconductor chip electric current is suitable.
The beneficial effects of the utility model: by destressing groove is set on electrode slice body, the telescopic variation of destressing groove after being heated by electrode slice, makes the thermal coefficient of expansion of electrode slice and silicon chip more approaching, avoid the be heated problem of easy drawing crack of silicon chip.Described destressing groove Heterogeneous Permutation, destressing better effects if.Described electrode slice is copper sheet, and cost is low, and thermal conductivity is good, and resistivity is low, chip operation can be produced to heat and conduct in time, reduces the loss causing because of the pressure drop producing on electrode.
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Accompanying drawing explanation
Fig. 1 is front view of the present utility model.
Fig. 2 is the front view that a plurality of electrode slice bodies are arranged in juxtaposition.
Embodiment
Embodiment 1: as shown in Figure 1, a kind of power semiconductor chip electrode structure, comprises electrode slice, and described electrode slice comprises electrode slice body 1 and current output terminal 2; On described electrode slice body 1, be provided with one group of destressing groove 3.Described electrode slice is copper sheet, and destressing groove 3 is arranged on destressing groove 3 Heterogeneous Permutations on 1 liang of opposite side of electrode slice body and on two opposite side.
The hem width of described electrode slice body 1 is 2～8mm, and the described distance with 3 of the upper adjacent two destressing grooves in one side is 2～6mm.The width of described destressing groove 3 is 0.1～3mm, the dark 2～8mm of destressing groove 3.
Preferably, the hem width of described electrode slice body 1 is 5mm, and the described distance with 3 of the upper adjacent two destressing grooves in one side is 4mm.The width of described destressing groove 3 is 0.7mm, the dark 3mm of destressing groove 3.
As shown in Figure 2, described electrode slice at least arranges one group of electrode slice body 1, and the output size of the number of described electrode slice body 1 and power semiconductor chip electric current is suitable.According to electric current output size, a plurality of electrode slice bodies 1 arranged side by side can be set.
Claims (8)
1. a power semiconductor chip electrode structure, comprises electrode slice, and described electrode slice comprises electrode slice body (1) and current output terminal (2); It is characterized in that: on described electrode slice body (1), be provided with one group of destressing groove (3).
2. power semiconductor chip electrode structure according to claim 1, is characterized in that: described destressing groove (3) Heterogeneous Permutation.
3. power semiconductor chip electrode structure according to claim 1 and 2, is characterized in that: described destressing groove (3) is arranged on electrode slice body (1) two opposite side.
4. power semiconductor chip electrode structure according to claim 3, is characterized in that: described electrode slice is copper sheet, and the hem width of described electrode slice body (1) is 2～8mm, and described is 2～6mm with the distance between the upper adjacent two destressing grooves (3) in one side.
5. power semiconductor chip electrode structure according to claim 4, is characterized in that: the width of described destressing groove (3) is 0.1～3mm, the dark 2～8mm of destressing groove (3).
6. power semiconductor chip electrode structure according to claim 4, is characterized in that: the hem width of described electrode slice body (1) is 5mm, and described is 4mm with the distance between the upper adjacent two destressing grooves (3) in one side.
7. power semiconductor chip electrode structure according to claim 5, is characterized in that: the width of described destressing groove (3) is 0.7mm, the dark 3mm of destressing groove (3).
8. power semiconductor chip electrode structure according to claim 1 and 2, it is characterized in that: described electrode slice at least arranges an electrode slice body (1) number of described electrode slice body (1) and the suitable setting of the output of power semiconductor chip electric current size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320478215.5U CN203415580U (en) | 2013-08-06 | 2013-08-06 | Electrode structure of power semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320478215.5U CN203415580U (en) | 2013-08-06 | 2013-08-06 | Electrode structure of power semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203415580U true CN203415580U (en) | 2014-01-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320478215.5U Expired - Lifetime CN203415580U (en) | 2013-08-06 | 2013-08-06 | Electrode structure of power semiconductor chip |
Country Status (1)
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| CN (1) | CN203415580U (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105940774A (en) * | 2014-01-31 | 2016-09-14 | 巨石材料公司 | Plasma torch design |
| US11149148B2 (en) | 2016-04-29 | 2021-10-19 | Monolith Materials, Inc. | Secondary heat addition to particle production process and apparatus |
| US11203692B2 (en) | 2014-01-30 | 2021-12-21 | Monolith Materials, Inc. | Plasma gas throat assembly and method |
| US11492496B2 (en) | 2016-04-29 | 2022-11-08 | Monolith Materials, Inc. | Torch stinger method and apparatus |
| US11591477B2 (en) | 2014-01-30 | 2023-02-28 | Monolith Materials, Inc. | System for high temperature chemical processing |
| US11665808B2 (en) | 2015-07-29 | 2023-05-30 | Monolith Materials, Inc. | DC plasma torch electrical power design method and apparatus |
| US11760884B2 (en) | 2017-04-20 | 2023-09-19 | Monolith Materials, Inc. | Carbon particles having high purities and methods for making same |
| US11926743B2 (en) | 2017-03-08 | 2024-03-12 | Monolith Materials, Inc. | Systems and methods of making carbon particles with thermal transfer gas |
| US11939477B2 (en) | 2014-01-30 | 2024-03-26 | Monolith Materials, Inc. | High temperature heat integration method of making carbon black |
| US11987712B2 (en) | 2015-02-03 | 2024-05-21 | Monolith Materials, Inc. | Carbon black generating system |
| US11998886B2 (en) | 2015-02-03 | 2024-06-04 | Monolith Materials, Inc. | Regenerative cooling method and apparatus |
| US12030776B2 (en) | 2017-08-28 | 2024-07-09 | Monolith Materials, Inc. | Systems and methods for particle generation |
| US12119133B2 (en) | 2015-09-09 | 2024-10-15 | Monolith Materials, Inc. | Circular few layer graphene |
-
2013
- 2013-08-06 CN CN201320478215.5U patent/CN203415580U/en not_active Expired - Lifetime
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11866589B2 (en) | 2014-01-30 | 2024-01-09 | Monolith Materials, Inc. | System for high temperature chemical processing |
| US11203692B2 (en) | 2014-01-30 | 2021-12-21 | Monolith Materials, Inc. | Plasma gas throat assembly and method |
| US11939477B2 (en) | 2014-01-30 | 2024-03-26 | Monolith Materials, Inc. | High temperature heat integration method of making carbon black |
| US11591477B2 (en) | 2014-01-30 | 2023-02-28 | Monolith Materials, Inc. | System for high temperature chemical processing |
| CN110505745A (en) * | 2014-01-31 | 2019-11-26 | 巨石材料公司 | The design of plasma torch |
| CN105940774A (en) * | 2014-01-31 | 2016-09-14 | 巨石材料公司 | Plasma torch design |
| US11304288B2 (en) | 2014-01-31 | 2022-04-12 | Monolith Materials, Inc. | Plasma torch design |
| US11987712B2 (en) | 2015-02-03 | 2024-05-21 | Monolith Materials, Inc. | Carbon black generating system |
| US11998886B2 (en) | 2015-02-03 | 2024-06-04 | Monolith Materials, Inc. | Regenerative cooling method and apparatus |
| US11665808B2 (en) | 2015-07-29 | 2023-05-30 | Monolith Materials, Inc. | DC plasma torch electrical power design method and apparatus |
| US12119133B2 (en) | 2015-09-09 | 2024-10-15 | Monolith Materials, Inc. | Circular few layer graphene |
| US11492496B2 (en) | 2016-04-29 | 2022-11-08 | Monolith Materials, Inc. | Torch stinger method and apparatus |
| US11149148B2 (en) | 2016-04-29 | 2021-10-19 | Monolith Materials, Inc. | Secondary heat addition to particle production process and apparatus |
| US12012515B2 (en) | 2016-04-29 | 2024-06-18 | Monolith Materials, Inc. | Torch stinger method and apparatus |
| US11926743B2 (en) | 2017-03-08 | 2024-03-12 | Monolith Materials, Inc. | Systems and methods of making carbon particles with thermal transfer gas |
| US11760884B2 (en) | 2017-04-20 | 2023-09-19 | Monolith Materials, Inc. | Carbon particles having high purities and methods for making same |
| US12030776B2 (en) | 2017-08-28 | 2024-07-09 | Monolith Materials, Inc. | Systems and methods for particle generation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 245000 No. 449 Xinxing Road, Qimen County, Anhui, Huangshan City Patentee after: Huangshan core Microelectronics Co.,Ltd. Address before: 245600 No. 449 Xinxing Road, Qimen County, Anhui, Huangshan City Patentee before: HUANGSHAN ELECTRIC APPLIANCE Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140129 |
|
| CX01 | Expiry of patent term |