CN203398120U - Grid-line structure of crystalline-silicon solar cells - Google Patents
Grid-line structure of crystalline-silicon solar cells Download PDFInfo
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- CN203398120U CN203398120U CN201320489101.0U CN201320489101U CN203398120U CN 203398120 U CN203398120 U CN 203398120U CN 201320489101 U CN201320489101 U CN 201320489101U CN 203398120 U CN203398120 U CN 203398120U
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- grid line
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Abstract
The utility model discloses a grid-line structure of crystalline-silicon solar cells. The grid-line structure includes a plurality of annular fine grid lines which are distributed on the solar cells in uniform intervals and at least two main grid lines arranged to be vertical to the annular fine grid lines. Intervals between two adjacent annular fine grid lines are 0.1mm-2mm. A width of each annular fine grid line is 1mm-10mm. Through a design of the grid lines on the surfaces of line concentrator cells, the surfaces of different strip-shaped cell units obtained through separation after cutting are enabled to have the same distribution and the annular fine grid lines are distributed on the edges of the strip-shaped cells uniformly and thus not only compatibility of electrical performance of all the strip-shaped cells is ensured but also incident light is not blocked by the grid lines when the middle regions of the strip-shaped cells are subjected to light of a comparatively high intensity in application of light-focusing photovoltaic of lower times. Therefore, photoelectric conversion efficiency is improved.
Description
Technical field
The utility model belongs to technical field of solar utilization technique, particularly a kind of grid line structure of crystal silicon solar battery.
Background technology
Traditional handicraft prepared by common crystal-silicon solar cell gate line electrode is generally the method that adopts silk screen printing silver slurry is printed on to Al electrode that the emitter of battery forms the special pattern ，Zai Yu back side together by high temperature sintering, finally forms front and back electrode.In the situation that the area of crystal-silicon battery slice is fixing, the grid line design of solar cell is extremely important, and it has not only affected the effective area of shining light of solar cell, has also determined the series resistance of battery, thereby has affected solar cell generating efficiency.
Generally tens solar cells are made into solar module by operations such as single weldering, series welding, lamination, lamination solidify at present, the grid line design basis on all cell pieces surface is all based in the situation that assurance cell piece series resistance is less, reduce the shielded area of grid line as far as possible, thereby improve the generated output of whole cell piece.And in current some, in the product of low-concentration photovoltaic product or other photovoltaic classes, need to use the solar cell of strip.Relatively cheap based on cost, so crystal silicon solar battery becomes first-selection.The approach that generally obtains strip crystal silicon solar battery is directly common crystalline silicon battery plate cutting to be obtained, but because the grid line design of common crystal-silicon battery slice is that power based on whole cell piece and the optimization of cost design, its surperficial grid line design is to be uniformly distributed, therefore there is a certain width cutting into, as while cutting into the strip cell of 3mm, surperficial grid line quantity on the every battery obtaining and position are also inconsistent, what for example have has a thin grid line, and have there are two, and when being cut, cell piece also can cause destroying to some thin grid line, such as just cutting to thin grid line, this just causes the grid line quantity of obtained strip solar cell and layout all to present certain randomness, thereby affect the performance of battery.On the other hand, when strip cell applies to middle low-concentration situation, because the hot spot after optically focused generally concentrates on the centre position of battery, and hot spot has inhomogeneities, therefore, if the thin grid line of strip cell is just positioned at the middle part of battery at random, light that will certainly Dui Gai region causes more serious occlusion effect, thereby affects the efficiency of battery, the occlusion effect of the thin grid line of diverse location is different, and the efficiency that causes battery is difference to some extent.In addition grid line is positioned at diverse location to the capacity gauge of photogenerated current also difference to some extent, therefore these factors all cause adopting with the crystal-silicon battery slice of general grid line design after being cut into the strip cell of same size, performance difference when reality is used is larger, thereby cause the performance mismatch in serial or parallel connection situation, affected the performance of the product of middle low-concentration photovoltaic or other utilization strip cell.Therefore, existing common crystal-silicon battery slice is through in cutting and apply to middle low-concentration photovoltaic product time, maximization that cannot implementation efficiency.
Utility model content
Goal of the invention of the present utility model is: for the problem of above-mentioned existence, a kind of matching that can guarantee the electrical property of all strip cell after cutting is provided, and do not have grid line to block incident light, thereby improve the grid line structure of the crystal silicon solar battery of electricity conversion.
The technical solution of the utility model is achieved in that a kind of grid line structure of crystal silicon solar battery, comprise some annular thin grid lines of being arranged on solar cell and equidistantly distributing and with the vertically arranged at least two main grid lines of described annular thin grid line, it is characterized in that: the spacing between described adjacent two annular thin grid lines is 0.1mm～2mm, and the width of each annular thin grid line is 1mm～10mm.
The grid line structure of crystal silicon solar battery described in the utility model, described in it, the gap location of main grid line between adjacent two annular thin grid lines disconnects, and is divided into some separate units that mate with annular thin grid line.
The grid line structure of crystal silicon solar battery described in the utility model, gap described in it between adjacent two annular thin grid lines is scribing position, the width of described annular thin grid line is less than the width of the rear strip solar cell of cutting, the corresponding strip solar cell of each annular thin grid line, described annular thin grid line is evenly distributed in the marginal portion of the strip solar cell corresponding with it.
The grid line structure of crystal silicon solar battery described in the utility model, identical and be arranged symmetrically with near the annular thin grid line design at left and right sides edge on solar cell described in it, the annular thin grid line design between it is identical and rectangular.
The utility model is by the design of grid line on line concentrator cell surface, the surface that can make to cut each strip cell unit that rear separation obtains has identical distribution, annular thin grid line is evenly distributed in the edge of strip cell, not only guaranteed the matching of the electrical property of all strip cell, and because thin grid line is distributed in battery edge, therefore when the condensation photovoltaic application of middle low power, when the central region of strip cell is subject to luminous intensity larger, do not have grid line to block incident light, therefore improved the efficiency of photoelectric conversion yet.
Accompanying drawing explanation
Fig. 1 is the grid line design that in the utility model, main grid line disconnects.
Fig. 2 is the partial enlarged drawing of Fig. 1.
Fig. 3 is the continuous grid line design of main grid line in the utility model.
Mark in figure: 1 is annular thin grid line, 2 is main grid line, 3 is solar cell.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
As illustrated in fig. 1 and 2, a kind of grid line structure of crystal silicon solar battery, comprise some annular thin grid lines 1 of being arranged on solar cell 3 and equidistantly distributing and with the vertically arranged three main grid lines 2 of described annular thin grid line 1, spacing between described adjacent two annular thin grid lines 1 is 0.1mm～2mm, and the width of each annular thin grid line 1 is 1mm～10mm.Gap between described adjacent two annular thin grid lines 1 is scribing position, the width of described annular thin grid line 1 is less than the width of the rear strip solar cell of cutting, the corresponding strip solar cell of each annular thin grid line 1, described annular thin grid line 1 is evenly distributed in the marginal portion of the strip solar cell corresponding with it; Annular thin grid line 1 near edge, the left and right sides on described solar cell 3 designs identical and is arranged symmetrically with, and annular thin grid line 1 design between it is identical and rectangular.
Wherein, the gap location of described main grid line 2 between adjacent two annular thin grid lines 1 disconnects, and is divided into some separate units that mate with annular thin grid line 1.Front or back side main grid line are designed to the separate unit of each disconnection, be beneficial to by laser or mechanical means whole cell piece is divided into required strip cell on the one hand, because the place of cutting apart does not have argent (front) or aerdentalloy (back side) or other to be used for forming the material of front and back electrode, thereby can improve treatment effeciency, and can effectively prevent from splitting Chu Beng limit and other reduce the injury of battery efficiencies.On the other hand, such design also can be saved positive silver slurry and the consumption of back silver aluminium paste, thereby reduces production costs.
As shown in Figure 3, described main grid line 2 designs for continous way.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (4)
1. the grid line structure of a crystal silicon solar battery, comprise be arranged on solar cell (3) some annular thin grid lines (1) upper and that equidistantly distribute and with the vertically arranged at least two main grid lines of described annular thin grid line (1) (2), it is characterized in that: the spacing between described adjacent two annular thin grid lines (1) is 0.1mm～2mm, the width of each annular thin grid line (1) is 1mm～10mm.
2. the grid line structure of crystal silicon solar battery according to claim 1, is characterized in that: the gap location of described main grid line (2) between adjacent two annular thin grid lines (1) disconnects, and is divided into some separate units that mate with annular thin grid line (1).
3. the grid line structure of crystal silicon solar battery according to claim 1 and 2, it is characterized in that: the gap between described adjacent two annular thin grid lines (1) is scribing position, the width of described annular thin grid line (1) is less than the width of the rear strip solar cell of cutting, the corresponding strip solar cell of each annular thin grid line (1), described annular thin grid line (1) is evenly distributed in the marginal portion of the strip solar cell corresponding with it.
4. the grid line structure of crystal silicon solar battery according to claim 3, it is characterized in that: the upper annular thin grid line (1) near edge, the left and right sides of described solar cell (3) designs identical and is arranged symmetrically with, and the annular thin grid line (1) between it designs identical and rectangular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320489101.0U CN203398120U (en) | 2013-08-12 | 2013-08-12 | Grid-line structure of crystalline-silicon solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320489101.0U CN203398120U (en) | 2013-08-12 | 2013-08-12 | Grid-line structure of crystalline-silicon solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203398120U true CN203398120U (en) | 2014-01-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320489101.0U Withdrawn - After Issue CN203398120U (en) | 2013-08-12 | 2013-08-12 | Grid-line structure of crystalline-silicon solar cells |
Country Status (1)
| Country | Link |
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| CN (1) | CN203398120U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400871A (en) * | 2013-08-12 | 2013-11-20 | 四川钟顺太阳能开发有限公司 | Grid line design on surface of solar battery |
-
2013
- 2013-08-12 CN CN201320489101.0U patent/CN203398120U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400871A (en) * | 2013-08-12 | 2013-11-20 | 四川钟顺太阳能开发有限公司 | Grid line design on surface of solar battery |
| CN103400871B (en) * | 2013-08-12 | 2016-08-10 | 四川钟顺太阳能开发有限公司 | A kind of solar battery surface grid line structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140115 Effective date of abandoning: 20160810 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |