CN203398112U - 高压led灯珠 - Google Patents

高压led灯珠 Download PDF

Info

Publication number
CN203398112U
CN203398112U CN201320417899.8U CN201320417899U CN203398112U CN 203398112 U CN203398112 U CN 203398112U CN 201320417899 U CN201320417899 U CN 201320417899U CN 203398112 U CN203398112 U CN 203398112U
Authority
CN
China
Prior art keywords
led
voltage
led lamp
lamp pearl
lamp bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320417899.8U
Other languages
English (en)
Inventor
王珏越
何刚
朱明甫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201320417899.8U priority Critical patent/CN203398112U/zh
Application granted granted Critical
Publication of CN203398112U publication Critical patent/CN203398112U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

本实用新型涉及LED光源技术领域，具体地说是一种高压LED灯珠，包括LED支架（1）和若干颗LED芯片（2），所述LED芯片（2）固设于LED支架（1）上，所述LED支架（1）内部设有正极导电端子和负极导电端子，所述LED芯片（2）相互之间通过金线（3）串联连接并通过金线（3）连接于正极导电端子和负极导电端子之间；本实用新型同现有技术相比，结构新颖、简单，设计合理，从根本上改变了低电压高电流的模式，开创了一种高电压低电流的模式，确保了LED灯珠在高功率时依然保持了很低的电流密度，从而极大提高了高功率LED灯珠的发光效率。

Description

高压LED灯珠
[技术领域]
本实用新型涉及LED光源技术领域，具体地说是一种高压LED灯珠。
[背景技术]
目前，普通的LED灯珠电压一般为3V，功率由电流决定，如20mA0.06W、30mA0.1W、60mA0.2W、150mA0.5W、350mA1W、700mA3W，也就是说LED灯珠的功率随着电流的加大而加大，从而大功率LED灯珠呈现出一种低电压高电流的现象。而LED芯片作为一种半导体器件，其发光效率随着电流密度的增大而减小，因此普通的LED灯珠由于功率增大的过程中存在低电压高电流现象，导致发光效率不断下降，如20mA0.06W光效120lm/W的灯珠在700mA3W时光效约为60lm/w。
因此，LED灯具若选用普通3V的LED灯珠，则需要进行大量的串并联组合，才能实现LED灯珠电压与输入电压的匹配。考虑到灯具的尺寸、安全性的控制和空间配光需求，LED灯具一般采取变压模式或阻容降压模式来实现输入电压AC220V与LED灯珠的匹配，这就大大降低了电源效率和电能利用率。
[实用新型内容]
本实用新型的目的就是要解决上述的不足而提供一种高电压低电流模式的高压LED灯珠，确保了LED灯珠在高功率时依然保持了很低的电流密度，从而极大提高了高功率LED灯珠的发光效率，大大提升了电源效率。
为实现上述目的设计一种高压LED灯珠，包括LED支架1和若干颗LED芯片2，所述LED芯片2固设于LED支架1上，所述LED支架1内部设有正极导电端子和负极导电端子，所述LED芯片2相互之间通过金线3串联连接并通过金线3连接于正极导电端子和负极导电端子之间。
所述LED芯片2粘结在LED支架1上。
所述LED芯片2为电压为3V的低压芯片。
本实用新型同现有技术相比，结构新颖、简单，设计合理，通过采用“多芯封装”技术，将多颗电压为3V的低压LED芯片在灯珠内部进行串联，从而以3V为阶梯，使得高压LED灯珠的电压能够达到108V、261V甚至更高，从根本上改变了低电压高电流的模式，开创了一种高电压低电流的模式，确保了LED灯珠在高功率时依然保持了很低的电流密度，从而极大提高了高功率LED灯珠的发光效率；此外，本实用新型所述的高压LED灯珠与高压电源匹配后省略了降压环节，大大提升了电源效率至95%和功率因数0.99，值得推广应用。
[附图说明]
图1是本实用新型的结构示意图；
图中：1、LED支架2、LED芯片3、金线。
[具体实施方式]
下面结合附图对本实用新型作以下进一步说明：
如附图1所示，本实用新型包括：LED支架1和若干颗LED芯片2，LED芯片为电压为3V的低压芯片，LED芯片固设于LED支架上，如通过粘结的方式固设在LED支架上，LED支架内部设有正极导电端子和负极导电端子，LED芯片相互之间通过金线3串联连接并通过金线连接于正极导电端子和负极导电端子之间。
本实用新型是一种高压LED灯珠（HV-LED），其核心是使用“多芯封装”的工艺，将多颗电压为3V的低压LED芯片在灯珠内部进行串联，串联两颗就是6V，三颗就是9V,这样以3V为阶梯，电压可以达到108V，261V甚至更高，使得LED灯珠电压以3V为单位任意调节，从而实现光源按照电源要求进行完美匹配，如美国110V市场也可以做相应配套。
LED灯具选用本实用新型所述的高压LED灯珠后，可选用少量甚至单颗LED灯珠就可以实现与输入电压AC220V的匹配，极大地提高了电源效率和电能利用率，并且可根据各国家和地区的电压特点，如AC110V、AC127V，AC240V，设计电压不同的高压灯珠，从而可以通过低电流高电压的模式，实现高功率LED灯珠依然保持高光效，提高了电源效率及电能利用率。
本实用新型并不受上述实施方式的限制，其他的任何未背离本实用新型的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本实用新型的保护范围之内。

Claims (3)

1.一种高压LED灯珠，其特征在于：包括LED支架（1）和若干颗LED芯片（2），所述LED芯片（2）固设于LED支架（1）上，所述LED支架（1）内部设有正极导电端子和负极导电端子，所述LED芯片（2）相互之间通过金线（3）串联连接并通过金线（3）连接于正极导电端子和负极导电端子之间。
2.如权利要求1所述的高压LED灯珠，其特征在于：所述LED芯片（2）粘结在LED支架（1）上。
3.如权利要求1或2所述的高压LED灯珠，其特征在于：所述LED芯片（2）为电压为3V的低压芯片。
CN201320417899.8U 2013-07-11 2013-07-11 高压led灯珠 Expired - Fee Related CN203398112U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320417899.8U CN203398112U (zh) 2013-07-11 2013-07-11 高压led灯珠

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320417899.8U CN203398112U (zh) 2013-07-11 2013-07-11 高压led灯珠

Publications (1)

Publication Number Publication Date
CN203398112U true CN203398112U (zh) 2014-01-15

Family

ID=49909623

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320417899.8U Expired - Fee Related CN203398112U (zh) 2013-07-11 2013-07-11 高压led灯珠

Country Status (1)

Country Link
CN (1) CN203398112U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106015971A (zh) * 2016-07-18 2016-10-12 深圳中景科创光电科技有限公司 一种dob灯具模组

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106015971A (zh) * 2016-07-18 2016-10-12 深圳中景科创光电科技有限公司 一种dob灯具模组
CN106015971B (zh) * 2016-07-18 2019-05-17 深圳中景科创光电科技有限公司 一种dob灯具模组

Similar Documents

Publication Publication Date Title
CN203398112U (zh) 高压led灯珠
CN203731144U (zh) 一种led灯丝灯泡
CN202663296U (zh) 适合于低压灯串负载连接的升压转换器
CN202613176U (zh) 一种网格式led照明灯
CN201866558U (zh) Led集成模块
CN207162196U (zh) 一种smt贴片led灯条
CN202026511U (zh) 一种led恒流恒压取电系统
CN205859624U (zh) 光引擎led灯丝
CN205316117U (zh) 一种能够兼容电子镇流器的led灯管
CN203205419U (zh) 单向hv led芯片
CN204335065U (zh) 一种新型led照明装置
CN209627764U (zh) 一种恒压led电路
CN105257023A (zh) 一种多功能凉亭
CN202511045U (zh) Led灯
CN203941946U (zh) 一种led铜线灯串和led贴片灯
CN202349644U (zh) 发光二极管光源模块
CN202852459U (zh) 一种驱动电源外置的led日光灯
CN203136230U (zh) 一种在集中供电系统中应用高压led的电路
CN202758886U (zh) Led灯板的封装结构
CN209495168U (zh) 一种内置电阻的led灯带
CN201652101U (zh) 一种led灯珠
CN201351888Y (zh) 发光二极管光源模块及其定电流单元结构
CN206786415U (zh) 一种led灯条
CN208657131U (zh) 一种led多功能台灯
CN202056599U (zh) 一种层分布结构的led灯具

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140115

Termination date: 20190711

CF01 Termination of patent right due to non-payment of annual fee