CN203377215U - Extremely-thick epitaxial wafer for high-voltage power device - Google Patents
Extremely-thick epitaxial wafer for high-voltage power device Download PDFInfo
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- CN203377215U CN203377215U CN201320347279.1U CN201320347279U CN203377215U CN 203377215 U CN203377215 U CN 203377215U CN 201320347279 U CN201320347279 U CN 201320347279U CN 203377215 U CN203377215 U CN 203377215U
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Abstract
The utility model discloses an extremely-thick epitaxial wafer for a high-voltage power device, and the epitaxial wafer comprises a substrate and an epitaxial layer. The epitaxial wafer is characterized in that the thickness of the substrate is more than 2cm; and the thickness of the epitaxial layer is more than 100 microns. The epitaxial wafer provided by the utility model can effectively solve the problems of wafer fragmentation, margin indentation, severe defects in wafer growth, poor thickness uniformity and poor resistivity uniformity of large-sized extremely-thick epitaxial wafer in a process of industrial continuous mass production after epitaxy, so as to meet the requirements of the designed thickness of the device on the edge of the epitaxial wafer and the wafer surface. Moreover, the epitaxial wafer provided by the utility model can be widely used for the high-voltage power device, and a voltage which the epitaxial wafer can withstand can reach to 1900V. At present, the extremely-thick epitaxial wafer and the voltage which the epitaxial wafer can withstand achieve the breakthrough of zero. The thickness nonuniformity of the extremely-thick epitaxial wafer which is manufactured according to the manufacture method in the utility model decreases to 2.03%, and the resistivity nonuniformity of the extremely-thick epitaxial wafer decreases to 4.24%.
Description
Technical field
The utility model relates to a kind of extremely thick epitaxial wafer for high voltage power device.
Background technology
Extension on silicon monocrystalline substrate along the technique of original crystal orientation regrowth one deck silicon single crystal thin film.Silicon epitaxial wafer is the main material of making semi-conductor discrete device, because it can guarantee the high-breakdown-voltage of PN junction, can reduce again the forward voltage drop of device.It is even higher that some high voltage power devices have reached 1500V to withstand voltage requirement, corresponding, more than having reached 100um for the thickness requirement of extension, even arrives 160um.
Weighing the extension quality has three important parameters, is respectively thickness, resistivity, blemish.Along with the increase of epitaxial thickness, especially large scale is as the epitaxial wafer more than 6 cun, and epitaxy layer thickness and resistance uniformity all can become and be difficult to regulate, and accomplish that perfect crystal column surface is extremely difficult especially.
Long so thick extension on the extension of 6 cun or 8 cun, the epitaxial wafer produced according to traditional technique and relevant device, material configuration has following defect: 1, fragment or sliver, epitaxial loayer can regard that in layer film accumulation as thin as a wafer is stacked on substrate as, under the effect of external force, can bend, the temperature of wafer each point can produce along with the increase of epitaxial thickness increasing difference, when the temperature gradient of same wafer diverse location acquires a certain degree, can break; 2, thickness evenness and resistivity evenness are poor, existing a large amount of test data can draw, in the situation that other condition is constant, more than long brilliant thickness becomes 100um from 40um, thickness evenness is 6% from 2% variation, it is even poorer into 8% from 3% variation that resistivity evenness becomes, and this is that to transmit the deposition rate of the inhomogeneous various chemical compositions that cause difference inconsistent due to the thermal losses of thermal stress and utmost point thick epitaxial layer and heat equally; Computing formula: the * 100%/(MAX+MIN) of thickness/resistivity heterogeneity=(MAX-MIN), MAX is maximum ga(u)ge/resistivity value in 9 points of diverse location on wafer, MIN is minimum thickness/resistivity value in 9 points.3, the brilliant defect of length on surface is especially in the brilliant defect of the length of Waffer edge, because extension is looser than atom, the molecules align of substrate, show on physical characteristic to be that hardness is not so good as substrate, along with constantly thickening of epitaxial loayer, the defect at edge can increase, especially this extremely thick extension that is greater than 100um, the large scale (> 0.5um that meeting grow up at edge hillock, the isometric crystalline substance of fault forms) defect; 4, Waffer edge is weighed wounded the formation impression by the brilliant table mechanical arm of outer prolongation, this be due to extremely thick extension for the adjusting of equipment, require very high, especially when mechanical arm is put into and take out wafer due to the long thickness difference before and after brilliant of wafer greatly and unreasonable the caused arm of the graphite of long brilliant use hole size externally delay the impression of Waffer edge.
The utility model content
One of the purpose of this utility model is in order to overcome deficiency of the prior art, and a kind of extremely thick epitaxial wafer for high voltage power device is provided.
For realizing above purpose, the utility model is achieved through the following technical solutions:
Extremely thick epitaxial wafer for high voltage power device, comprise substrate and epitaxial loayer, it is characterized in that, described substrate is more than 6 cun, and described epitaxy layer thickness is more than 100 μ m.
Preferably, described substrate is 6 cun or 8 cun.
Preferably, described epitaxy layer thickness is 100 μ m-199 μ m.
Preferably, the thickness heterogeneity of described epitaxial loayer is less than or equal to 5%.
Preferably, the resistance heterogeneity of described epitaxial loayer is less than or equal to 5%.
Preferably, described substrate is the N-type substrate.
Preferably, at least one element in described N-type substrate arsenic doped, phosphorus and antimony.
Preferably, described substrate is P type substrate.
Preferably, described P type substrate is doped with boron element.
The utility model can effectively solve in a large amount of industrial continuous flow procedures that the extremely thick extension of large scale delays that wafer is cracked outside, edge impression, long brilliant large defect, thickness evenness and the poor problem of resistivity evenness, to meet the demand of the rear road of device design to epitaxial wafer edge and wafer surface, and, the related extremely thick epitaxial wafer of the utility model can be widely used in high voltage power device, the voltage born can be up to 1900V, at present, at home, this extremely thick extension and the high voltage that bears belong to the breakthrough of zero.The extremely thick epitaxial wafer for high voltage power device of producing according to the manufacture method in the utility model, the thickness heterogeneity can be reduced to 2.03%.The resistivity heterogeneity can be reduced to 4.24%.
The accompanying drawing explanation
Fig. 1 is the manufacture method flow chart for the extremely thick epitaxial wafer of high voltage power device.
The wafer schematic diagram that the marginal existence that Fig. 2 is prior art production weighs wounded.
The wafer schematic diagram that the marginal existence that Fig. 3 is prior art production is wounded.
The wafer schematic diagram of the marginal existence slight crack that Fig. 4 is prior art production.
Fig. 5 is the wafer schematic diagram that the utility model is produced.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in detail:
Use the brilliant board of outer prolongation for LPE3061 series board, the foundation arrangement of 6 cun, the 8 cun wafers of carrying of its inside, 6 cun epitaxy machine platforms comprise 8 graphite holes, and 8 cun comprise 5 graphite holes, and the graphite hole is used for carrying the brilliant substrate of required length.
As shown in Figure 1, take that to produce 8 cun epitaxial wafers be example, the graphite hole is of a size of 202mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The N-type substrate that is mixed with As is put into to the graphite hole.Heat up in two steps, the first step, rise to 950 ° of C with the speed of 100 ° of C/min from room temperature; Second step, be warming up to 1040 ° of C of long brilliant temperature with the speed of 10 ° of C/min, then at the long brilliant thick epitaxial loayer of 150 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 70ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 2
As shown in Figure 1, take that to produce 8 cun epitaxial wafers be example, the graphite hole is of a size of 202mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The N-type substrate that is mixed with phosphorus is put into to graphite hole, heat up in two steps, the first step, rise to 980 ° of C with the speed of 80 ° of C/min from room temperature; Second step, be warming up to 1050 ° of C of long brilliant temperature with the speed of 15 ° of C/min, then at the long brilliant thick epitaxial loayer of 160 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 70ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 3
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The N-type substrate that is mixed with antimony is put into to graphite hole, heat up in two steps, the first step, rise to 960 ° of C with the speed of 110 ° of C/min from room temperature; Second step, be warming up to 1100 ° of C of long brilliant temperature with the speed of 20 ° of C/min, then at the long brilliant thick epitaxial loayer of 120 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 90ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 4
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The P type substrate that is mixed with boron is put into to graphite hole, heat up in two steps, the first step, rise to 950 ° of C with the speed of 120 ° of C/min from room temperature; Second step, be warming up to 1050 ° of C of long brilliant temperature with the speed of 10 ° of C/min, then at the long brilliant thick epitaxial loayer of 180 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 100ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 5
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The P type substrate that is mixed with boron is put into to graphite hole, heat up in two steps, the first step, rise to 980 ° of C with the speed of 105 ° of C/min from room temperature; Second step, be warming up to 1050 ° of C of long brilliant temperature with the speed of 15 ° of C/min, then at the long brilliant thick epitaxial loayer of 170 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 100ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 6
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The P type substrate that is mixed with boron is put into to graphite hole, heat up in two steps, the first step, rise to 970 ° of C with the speed of 108 ° of C/min from room temperature; Second step, be warming up to 1060 ° of C of long brilliant temperature with the speed of 16 ° of C/min, then at the long brilliant thick epitaxial loayer of 170 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 80ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 7
As shown in Figure 1, take that to produce 8 cun epitaxial wafers be example, the graphite hole is of a size of 202mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The P type substrate that is mixed with boron is put into to graphite hole, heat up in two steps, the first step, rise to 990 ° of C with the speed of 103 ° of C/min from room temperature; Second step, be warming up to 1070 ° of C of long brilliant temperature with the speed of 14 ° of C/min, then at the long brilliant thick epitaxial loayer of 160 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 100ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 8
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The N-type substrate that is mixed with arsenic is put into to graphite hole, heat up in two steps, the first step, rise to 940 ° of C with the speed of 102 ° of C/min from room temperature; Second step, be warming up to 1060 ° of C of long brilliant temperature with the speed of 18 ° of C/min, then at the long brilliant thick epitaxial loayer of 150 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 90ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
Embodiment 9
As shown in Figure 1, take that to produce 6 cun epitaxial wafers be example, the graphite hole is of a size of 152mm.The sheet arm is got in adjustment, makes it be parallel to wafer front surface and arm and need meet apart from the height of substrate slice the epitaxy layer thickness be greater than after long crystalline substance, avoids arm to weigh epitaxial wafer wounded.Adjust epitaxy machine platform temperature, make centered by the substrate center of circle, the temperature difference in the 150mm scope is less than or equal to 5 ° of C.The N-type substrate that is mixed with arsenic is put into to graphite hole, heat up in two steps, the first step, rise to 970 ° of C with the speed of 107 ° of C/min from room temperature; Second step, be warming up to 1100 ° of C of long brilliant temperature with the speed of 16 ° of C/min, then at the long brilliant thick epitaxial loayer of 140 μ m that forms of substrate surface.Epitaxial loayer doping P, the epilayer resistance rate after long crystalline substance is 60ohmcm.After long brilliant the end, cooling, take out epitaxial wafer, finishes.
The epitaxial wafer of producing in above embodiment, its epitaxial loayer comprise edge at outer without the bulky grain that is greater than 0.5um, and resistance uniformity and thickness evenness are all in 5%.
On the epitaxial loayer of the epitaxial wafer of manufacturing, centered by the center of circle, 9 points of uniform design, detect its resistivity and thickness, and the heterogeneity calculated is as shown in the table.
| Site1 | Site2 | Site3 | Site4 | Site5 | Site6 | Site7 | Site8 | Site9 | Avg | Uni | |
| Resistivity | 73.58 | 69.64 | 68.59 | 69.69 | 71.78 | 69.45 | 67.59 | 69.41 | 71.64 | 70.15 | 4.24％ |
| Thickness | 150.90 | 147.53 | 148.56 | 147.60 | 148.53 | 152.01 | 153.39 | 153.64 | 153.56 | 150.60 | 2.03％ |
As shown in Figure 5,48 wafer of producing in above each embodiment, all crystal round fringes are all without wounding, weighing wounded; There are not slight crack or fragment yet.
The comparative example 1
In embodiment 1-9, after graphite hole diameter is replaced by 201mm and 203mm, every production 48 wafer, the quantity that wafer 1 marginal existence weighs zone 11 wounded is more than 30, the schematic diagram that the wafer existence weighs wounded is as shown in Figure 2.
The comparative example 2
In embodiment 1-9, after graphite hole diameter is replaced by 151mm and 153mm, every production 48 wafer, the quantity that wafer 1 marginal existence weighs zone 11 wounded is more than 30, the schematic diagram that the wafer existence weighs wounded is as shown in Figure 2.
The comparative example 3
Select in substrate edges 3mm and exist the particle of 0.3um, there is the zone 12 of wounding in the wafer 1 shown in the Fig. 3 that can cause.If, according to adjustment epitaxy machine platform temperature described in the utility model, the wafer 1 of final production not there will be the phenomenon of fragment shown in Fig. 4 or slight crack 13.
And, no matter weigh wounded, wound or slight crack, be not by described the causing of above single reason.Even graphite hole size is identical with the utility model embodiment, if other process conditions are different from the utility model, still there will be the wafer existence more than at least 10% to weigh wounded.Even warm field control step is identical with the utility model embodiment, if other process conditions are different from the utility model, still there will be the wafer more than at least 10% to have slight crack or fragment.Therefore, each processing step of the utility model cooperatively interacts, and just can reach the target of the wafer of producing free of surface defects.
Manufacture method of the present utility model, it has effectively solved and above-mentioned has delayed that wafer is cracked outward, the problem of edge impression, long brilliant defect, thickness evenness and resistivity evenness.
Heterogeneity in the utility model=(maximum-minimum value) * 100%/(maximum+minimum value).
Embodiment in the utility model, only for the utility model is described, does not form the restriction to the claim scope, and other substituting of being equal in fact that those skilled in that art can expect, all in the utility model protection range.
Claims (3)
1. extremely thick epitaxial wafer for high voltage power device, comprise substrate and epitaxial loayer, it is characterized in that, described substrate is more than 6 cun, and described epitaxy layer thickness is more than 100 μ m; The thickness heterogeneity of described epitaxial loayer is less than or equal to 5%; The resistance heterogeneity of described epitaxial loayer is less than or equal to 5%.
2. extremely thick epitaxial wafer for high voltage power device according to claim 1, is characterized in that, described substrate is 6 cun or 8 cun.
3. extremely thick epitaxial wafer for high voltage power device according to claim 1, is characterized in that, described epitaxy layer thickness is 100 μ m-199 μ m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320347279.1U CN203377215U (en) | 2013-06-17 | 2013-06-17 | Extremely-thick epitaxial wafer for high-voltage power device |
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| CN201320347279.1U CN203377215U (en) | 2013-06-17 | 2013-06-17 | Extremely-thick epitaxial wafer for high-voltage power device |
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| CN201320347279.1U Expired - Lifetime CN203377215U (en) | 2013-06-17 | 2013-06-17 | Extremely-thick epitaxial wafer for high-voltage power device |
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