CN203364967U - Photoelectric detection transmission circuit applied to ultraviolet detector - Google Patents

Photoelectric detection transmission circuit applied to ultraviolet detector Download PDF

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Publication number
CN203364967U
CN203364967U CN 201320408233 CN201320408233U CN203364967U CN 203364967 U CN203364967 U CN 203364967U CN 201320408233 CN201320408233 CN 201320408233 CN 201320408233 U CN201320408233 U CN 201320408233U CN 203364967 U CN203364967 U CN 203364967U
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CN
China
Prior art keywords
operational amplifier
capacitor
ultraviolet detector
photoelectric detection
conversion chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201320408233
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Chinese (zh)
Inventor
赵龙龙
高守玮
袁舰
朱巍巍
余盈宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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Publication date
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Priority to CN 201320408233 priority Critical patent/CN203364967U/en
Application granted granted Critical
Publication of CN203364967U publication Critical patent/CN203364967U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a photoelectric detection transmission circuit applied to an ultraviolet detector. The circuit comprises a photoelectric detector D1, an operational amplifier U2, a matching resistor R3, a filter resistor R2, a filter capacitor C3 and an AD conversion chip U1. The detection circuit and the operational amplifier select the suitable matching resistor, which can greatly improve the signal-to-noise ratio and the measurement precision. An analog signal is amplified by the operational amplifier and locally and directly undergoes AD conversion. A converted digital signal is transmitted to a main control board, which avoids the loss of the analog signal in a long distance transmission process.

Description

Photoelectric Detection transmission circuit for Ultraviolet Detector
Technical field
The utility model relates to a kind of Photoelectric Detection transmission circuit, and particularly a kind of transmission circuit of the Photoelectric Detection for Ultraviolet Detector, belong to the Photoelectric Detection field.
Background technology
Photoelectric detecting technology is a kind of technology that intensity signal is converted to accessible electric signal, and its ultimate principle is being modulated to useful signal demodulation on light carrier out, realizing the conversion of light signal to electric signal.Measure the variation of electric signal, thereby realize the measurement to light signal.
Photoelectric detective circuit in existing Ultraviolet Detector, testing circuit is what to separate with the AD conversion, and testing circuit is on a circuit board, and AD changes on main circuit board.Because simulating signal is transmitted and had very large loss in circuit, and the simulating signal after the testing circuit amplification is through certain distance, transmission arrives on main circuit board, has distortion to a certain degree.
Simultaneously, although high input impedance operational amplifier can not considered the impedance balance of input end, for the preamplifying circuit of photodetection, remarkable difference is but arranged.On signal, output has appreciable impact to build-out resistor R3, selects suitable build-out resistor value most important.
The utility model content
The utility model is to solve the large problem of the direct transmitting procedure loss of simulating signal for the photoelectric detective circuit of Ultraviolet Detector that has now, and do not configure or configure the large problem of improper build-out resistor signal to noise ratio (S/N ratio), a kind of transmission circuit of the Photoelectric Detection for Ultraviolet Detector is provided, improves signal to noise ratio (S/N ratio) and measuring accuracy.
For achieving the above object, design of the present utility model is: the utility model provides a kind of transmission circuit of the Photoelectric Detection for Ultraviolet Detector, comprises photodetector, operational amplifier, build-out resistor, filter resistance, filter capacitor, AD conversion chip.The normal phase input end of operational amplifier meets a suitable build-out resistor R3, and the R3 resistance equals the resistance of filter resistance R2.The signal to noise ratio (S/N ratio) of the circuit of configurations match resistance is more than 10 times of configurations match resistance circuit signal to noise ratio (S/N ratio) not.Visible, configurations match resistance not only can improve front gain per stage, and can reduce current noise, thus raising by a relatively large margin signal to noise ratio (S/N ratio) and measuring accuracy.
Photoelectric signal collection, signal operation are amplified the utility model and the AD conversion is integrated on a circuit board, and simulating signal is directly carried out AD nearby and converted digital signal to after operational amplifier amplifies, and is then transmitted.
According to above-mentioned utility model design, the utility model adopts following technical proposals:
A kind of transmission circuit of the Photoelectric Detection for Ultraviolet Detector, comprise photodetector D1, operational amplifier U2, AD conversion chip U1, build-out resistor R3, filter resistance R2, filter capacitor C3, capacitor C 4, capacitor C 1 and capacitor C P1, it is characterized in that: the inverting input of described operational amplifier U2 is connected with photodetector D1 negative terminal, and the U2 normal phase input end is connected with photodetector D1 anode; The normal phase input end of operational amplifier U2 is through build-out resistor R3 ground connection; The U2 inverting input connects the positive input terminal of AD conversion chip U1 through filter resistance R2 and filter capacitor C3, the U2 inverting input connects the U2 output terminal through capacitor C 4, after U2 output terminal connecting resistance R1, with the positive input terminal of AD conversion chip U1, joins again; Meet filter capacitor C1 and CP1 between the positive input terminal of U1 and ground, the negative input end ground connection of U1.
Described operational amplifier U2 adopts chip OPA111, and described AD conversion chip U1 adopts chip ADS111.
Described operational amplifier U2 and AD conversion chip U1 are integrated on a circuit board.
The utility model compared with prior art, has following apparent substantive distinguishing features and advantage: in the utility model, operational amplifier is selected suitable build-out resistor, can improve by a relatively large margin signal to noise ratio (S/N ratio) and measuring accuracy.Simultaneously, simulating signal is directly moved the AD conversion nearby after operational amplifier, avoids the loss of signal in Distance Transmission.
The accompanying drawing explanation
Fig. 1 is the transmission circuit of the Photoelectric Detection for Ultraviolet Detector figure of the present utility model.
Embodiment
Details are as follows by reference to the accompanying drawings for preferred embodiment of the present utility model:
Embodiment mono-:
Referring to Fig. 1, the utility model is for a kind of transmission circuit of the Photoelectric Detection for Ultraviolet Detector, comprise photodetector D1, operational amplifier U2, AD conversion chip U1, build-out resistor R3, filter resistance R2, filter capacitor C3, capacitor C 4, capacitor C 1 and capacitor C P1 is characterized in that: the inverting input of described operational amplifier U2 is connected with photodetector D1 negative terminal, and the U2 normal phase input end is connected with photodetector D1 anode; The normal phase input end of operational amplifier U2 is through build-out resistor R3 ground connection; The U2 inverting input connects the positive input terminal of AD conversion chip U1 through filter resistance R2 and filter capacitor C3, the U2 inverting input connects the U2 output terminal through capacitor C 4, after U2 output terminal connecting resistance R1, with the positive input terminal of AD conversion chip U1, joins again; Meet filter capacitor C1 and CP1 between the positive input terminal of U1 and ground, the negative input end ground connection of U1.
Embodiment bis-:
The present embodiment and embodiment mono-are basic identical, and special feature is as follows:
Described operational amplifier U2 adopts chip OPA111, and described AD conversion chip U1 adopts chip ADS111.
Described operational amplifier U2 and AD conversion chip U1 are integrated on a circuit board.
Embodiment tri-:
As shown in Figure 1, this Photoelectric Detection transmission circuit for Ultraviolet Detector comprises photodetector D1, operational amplifier OPA111, build-out resistor R3, filter resistance R2, filter capacitor C3, AD conversion chip ADS1110.
The inverting input of operational amplifier is connected with photodetector one end, and normal phase input end is connected with the photodetector other end; Build-out resistor one termination operational amplifier normal phase input end, build-out resistor other end ground connection.Add a RC filtering circuit between the output of operational amplifier and photodetector output, filter resistance is R2, and filter capacitor is C3, has limited the bandwidth of amplifier output signal, filters noise through amplifying and the noise of amplifier itself; At the output terminal connecting resistance R1 of operational amplifier and then connect the AD input, at AD input termination capacitor C 1 and CP1, be used for the copped wave spike noise of elimination OPA111.Simulating signal after amplification is directly carried out AD conversion and is transmitted, and can avoid the distortion of simulating signal in transmitting procedure.
As a kind of preferred, the build-out resistor R3 of this embodiment gets 20M Ω, and filter capacitor C3 gets 100PF, and the AD conversion chip is selected ADS1110.
Above this implementing circuit being have been described in detail, but be one of embodiment of the present utility model, is schematically, but not for limiting the utility model.Those skilled in the art can modify on the basis of foregoing description, and these modifications should belong to protection scope of the present invention.

Claims (3)

1. the transmission circuit of the Photoelectric Detection for Ultraviolet Detector, comprise photodetector D1, operational amplifier U2, AD conversion chip U1, build-out resistor R3, filter resistance R2, filter capacitor C3, capacitor C 4, capacitor C 1 and capacitor C P1, it is characterized in that: the inverting input of described operational amplifier U2 is connected with photodetector D1 negative terminal, and the U2 normal phase input end is connected with photodetector D1 anode; The normal phase input end of operational amplifier U2 is through build-out resistor R3 ground connection; The U2 inverting input connects the positive input terminal of AD conversion chip U1 through filter resistance R2 and filter capacitor C3, the U2 inverting input connects the U2 output terminal through capacitor C 4, after U2 output terminal connecting resistance R1, with the positive input terminal of AD conversion chip U1, joins again; Meet filter capacitor C1 and CP1 between the positive input terminal of U1 and ground, the negative input end ground connection of U1.
2. the transmission circuit of the Photoelectric Detection for Ultraviolet Detector according to claim 1, is characterized in that: described operational amplifier U2 employing chip OPA111, described AD conversion chip U1 employing chip ADS111.
3. the transmission circuit of the Photoelectric Detection for Ultraviolet Detector according to claim 1, it is characterized in that: operational amplifier U2 and AD conversion chip U1 are integrated on a circuit board.
CN 201320408233 2013-07-10 2013-07-10 Photoelectric detection transmission circuit applied to ultraviolet detector Expired - Fee Related CN203364967U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320408233 CN203364967U (en) 2013-07-10 2013-07-10 Photoelectric detection transmission circuit applied to ultraviolet detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320408233 CN203364967U (en) 2013-07-10 2013-07-10 Photoelectric detection transmission circuit applied to ultraviolet detector

Publications (1)

Publication Number Publication Date
CN203364967U true CN203364967U (en) 2013-12-25

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CN 201320408233 Expired - Fee Related CN203364967U (en) 2013-07-10 2013-07-10 Photoelectric detection transmission circuit applied to ultraviolet detector

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CN (1) CN203364967U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106352977A (en) * 2016-09-09 2017-01-25 四川中惯科技股份有限公司 Four-quadrant sensor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106352977A (en) * 2016-09-09 2017-01-25 四川中惯科技股份有限公司 Four-quadrant sensor circuit

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131225

Termination date: 20140710

EXPY Termination of patent right or utility model