CN102427335A - Photoelectric detection preamplifier circuit - Google Patents
Photoelectric detection preamplifier circuit Download PDFInfo
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- CN102427335A CN102427335A CN2011103890961A CN201110389096A CN102427335A CN 102427335 A CN102427335 A CN 102427335A CN 2011103890961 A CN2011103890961 A CN 2011103890961A CN 201110389096 A CN201110389096 A CN 201110389096A CN 102427335 A CN102427335 A CN 102427335A
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- operational amplifier
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- feedback circuit
- electric capacity
- photoelectric detection
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Abstract
The invention discloses a photoelectric detection preamplifier circuit, which comprises a PIN photodiode, an external feedback circuit and an internal feedback circuit. The PIN photodiode converts a received light signal into an electrical signal, and inputs the electrical signal into the external feedback circuit for amplification. The internal feedback circuit is connected after the external feedback circuit, and comprises a first resistor, a second resistor, a first capacitor and a first operational amplifier, wherein one end of the first resistor is connected with the external feedback circuit, and the other end of the first resistor is connected with the inverting input end of the first operational amplifier and one end of the first capacitor; the other end of the first capacitor is connected with the output end of the first operational amplifier through the second resistor; and the non-inverting input end of the first operational amplifier is directly grounded. In such a way, noises in the input of the signal into the external feedback circuit can be effectively reduced, and the signal to noise ratio of the whole circuit is increased; and the photoelectric detection preamplifier circuit has the advantages of capability of decreasing a noise bandwidth and simple circuit structure.
Description
Technical field
The present invention relates to a kind of Photoelectric Detection pre-amplification circuit, particularly relate to the Photoelectric Detection pre-amplification circuit of a kind of low noise, high-responsivity.
Background technology
Photoelectric technology is with traditional optical technology and the new and high technology that modern electronic technology and computer technology are closely linked, and is to obtain optical information or by means of the important means of other information of light extraction (like power, temperature, sound, electric current, biology).Adopting photoelectric detecting method is exactly to come out the useful signal demodulation that is modulated on the light carrier, realizes the conversion of light signal to the signal of telecommunication.
But because of the light signal of optical fiber connector output normally very faint; Various interference of noise directly influence the certainty of measurement of useful signal, so general photodetector has the narrower shortcoming of bandwidth that responsiveness is low, additional noise is big, respective rate is slow and can handle required data transfer rate in the emission wavelength ranges of used light source.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of Photoelectric Detection pre-amplification circuit, can improve the circuit signal to noise ratio, reduce noise bandwidth.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: a kind of Photoelectric Detection pre-amplification circuit is provided; Comprise: PIN photodiode and external feedback circuit, said PIN photodiode converts the light signal that receives into the signal of telecommunication and is input to the external feedback circuit and amplifies, and said Photoelectric Detection pre-amplification circuit also comprises the internal feedback circuit; Said internal feedback circuit is connected on after the external feedback circuit; Comprise: first resistance, second resistance, first electric capacity and first operational amplifier, said first resistance, one termination external feedback circuit, another termination first operational amplifier inverting input and first electric capacity, one end; Said first electric capacity other end warp, second resistance connects the output of first operational amplifier, the direct ground connection of the in-phase input end of said first operational amplifier.
In preferred embodiment of the present invention; Said external feedback circuit comprises: the 3rd resistance, the 4th resistance, second electric capacity, the 3rd electric capacity and second operational amplifier; Said PIN photodiode is attempted by between the second operational amplifier homophase and the inverting input; Said the 3rd resistance connects the second operational amplifier in-phase input end, and said second electric capacity is attempted by the 3rd resistance two ends, said the 4th resistance one termination second operational amplifier inverting input; The direct ground connection of the other end, said the 3rd electric capacity is attempted by the 4th resistance two ends.
In preferred embodiment of the present invention, said PIN photodiode two ends parallel connection the 4th electric capacity.
In preferred embodiment of the present invention, said PIN photodiode works in the short circuit mode.
In preferred embodiment of the present invention, said second electric capacity is weakening electric capacity, has reduced noise bandwidth.
The invention has the beneficial effects as follows: Photoelectric Detection pre-amplification circuit of the present invention is provided with the internal feedback circuit; Effectively reduce signal and be input to the noise of external feedback circuit; Improved the signal to noise ratio of entire circuit, had and to reduce noise bandwidth and the simple advantage of circuit structure.
Description of drawings
Fig. 1 is a Photoelectric Detection pre-amplification circuit principle schematic of the present invention;
The mark of each parts is following in the accompanying drawing: PIN photodiode 1, external feedback circuit 2, internal feedback circuit 3.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is set forth in detail, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
See also Fig. 1; Photoelectric Detection pre-amplification circuit embodiment of the present invention comprises: PIN photodiode 1, external feedback circuit 2 and internal feedback circuit 3; Capacitor C x is attempted by the two ends of PIN photodiode 1, and PIN photodiode 1 converts the light signal that receives into the signal of telecommunication and is input to external feedback circuit 2 and amplifies.
Be different from prior art, set up the internal feedback circuit on the basis of feedback circuit outside in the circuit, further with the signal processing and amplifying, and the reasonably setting of resistance R 3, R4 ratio, reduced noise bandwidth.
The above is merely embodiments of the invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (5)
1. Photoelectric Detection pre-amplification circuit; Comprise: PIN photodiode and external feedback circuit; Said PIN photodiode converts the light signal that receives into the signal of telecommunication and is input to the external feedback circuit and amplifies, and it is characterized in that said Photoelectric Detection pre-amplification circuit also comprises the internal feedback circuit; Said internal feedback circuit is connected on after the external feedback circuit; Comprise: first resistance, second resistance, first electric capacity and first operational amplifier, said first resistance, one termination external feedback circuit, another termination first operational amplifier inverting input and first electric capacity, one end; Said first electric capacity other end warp, second resistance connects the output of first operational amplifier, the direct ground connection of the in-phase input end of said first operational amplifier.
2. Photoelectric Detection pre-amplification circuit according to claim 1; It is characterized in that; Said external feedback circuit comprises: the 3rd resistance, the 4th resistance, second electric capacity, the 3rd electric capacity and second operational amplifier, said PIN photodiode are attempted by between the second operational amplifier homophase and the inverting input, and said the 3rd resistance connects the second operational amplifier in-phase input end; Said second electric capacity is attempted by the 3rd resistance two ends; Said the 4th resistance one termination second operational amplifier inverting input, the direct ground connection of the other end, said the 3rd electric capacity is attempted by the 4th resistance two ends.
3. Photoelectric Detection pre-amplification circuit according to claim 1 is characterized in that, said PIN photodiode two ends parallel connection the 4th electric capacity.
4. Photoelectric Detection pre-amplification circuit according to claim 1 is characterized in that said PIN photodiode works in the short circuit mode.
5. Photoelectric Detection pre-amplification circuit according to claim 1 is characterized in that, said second electric capacity is weakening electric capacity, has reduced noise bandwidth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103890961A CN102427335A (en) | 2011-11-30 | 2011-11-30 | Photoelectric detection preamplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103890961A CN102427335A (en) | 2011-11-30 | 2011-11-30 | Photoelectric detection preamplifier circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102427335A true CN102427335A (en) | 2012-04-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103890961A Pending CN102427335A (en) | 2011-11-30 | 2011-11-30 | Photoelectric detection preamplifier circuit |
Country Status (1)
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| CN (1) | CN102427335A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105115703A (en) * | 2015-09-09 | 2015-12-02 | 合肥芯碁微电子装备有限公司 | Laser energy measuring device for laser direct writing exposure machine |
| CN106886029A (en) * | 2015-12-15 | 2017-06-23 | 昇佳电子股份有限公司 | Optical sensing apparatus |
| US9784670B1 (en) | 2014-01-22 | 2017-10-10 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| CN107817097A (en) * | 2017-12-05 | 2018-03-20 | 深圳市杰普特光电股份有限公司 | Laser optical detection circuit |
| US10014837B2 (en) | 2013-03-15 | 2018-07-03 | Theranos Ip Company, Llc | Femtowatt non-vacuum tube detector assembly |
| CN109060678A (en) * | 2018-08-27 | 2018-12-21 | 北京雪迪龙科技股份有限公司 | A kind of absorbance measuring circuit |
| CN110190816A (en) * | 2019-04-17 | 2019-08-30 | 西安电子科技大学 | A kind of self feed back low-noise amplifier applied to biopotential processing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201947245U (en) * | 2010-11-02 | 2011-08-24 | 杭州电子科技大学 | Isolated I/V (current/voltage) conversion circuit |
-
2011
- 2011-11-30 CN CN2011103890961A patent/CN102427335A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201947245U (en) * | 2010-11-02 | 2011-08-24 | 杭州电子科技大学 | Isolated I/V (current/voltage) conversion circuit |
Non-Patent Citations (1)
| Title |
|---|
| 刘彬 等.: "光电检测前置放大电路的设计", 《燕山大学学报》 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10014837B2 (en) | 2013-03-15 | 2018-07-03 | Theranos Ip Company, Llc | Femtowatt non-vacuum tube detector assembly |
| US11309856B2 (en) | 2013-03-15 | 2022-04-19 | Labrador Diagnostics Llc | Femtowatt non-vacuum tube detector assembly |
| US10778167B2 (en) | 2013-03-15 | 2020-09-15 | Labrador Diagnostics Llc | Femtowatt non-vacuum tube detector assembly |
| US10845299B2 (en) | 2014-01-22 | 2020-11-24 | Labrador Diagnostics Llc | Unified detection system for fluorometry, luminometry and spectrometry |
| US9835548B1 (en) | 2014-01-22 | 2017-12-05 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| US9784670B1 (en) | 2014-01-22 | 2017-10-10 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| CN105115703A (en) * | 2015-09-09 | 2015-12-02 | 合肥芯碁微电子装备有限公司 | Laser energy measuring device for laser direct writing exposure machine |
| CN106886029A (en) * | 2015-12-15 | 2017-06-23 | 昇佳电子股份有限公司 | Optical sensing apparatus |
| CN107817097A (en) * | 2017-12-05 | 2018-03-20 | 深圳市杰普特光电股份有限公司 | Laser optical detection circuit |
| CN107817097B (en) * | 2017-12-05 | 2024-05-31 | 深圳市杰普特光电股份有限公司 | Laser light detection circuit |
| CN109060678A (en) * | 2018-08-27 | 2018-12-21 | 北京雪迪龙科技股份有限公司 | A kind of absorbance measuring circuit |
| CN110190816A (en) * | 2019-04-17 | 2019-08-30 | 西安电子科技大学 | A kind of self feed back low-noise amplifier applied to biopotential processing |
| CN110190816B (en) * | 2019-04-17 | 2021-05-14 | 西安电子科技大学 | Self-feedback low-noise amplifier applied to biopotential treatment |
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Application publication date: 20120425 |