CN203351609U - Polarized doping-based GaN Schottky diode - Google Patents
Polarized doping-based GaN Schottky diode Download PDFInfo
- Publication number
- CN203351609U CN203351609U CN 201320462798 CN201320462798U CN203351609U CN 203351609 U CN203351609 U CN 203351609U CN 201320462798 CN201320462798 CN 201320462798 CN 201320462798 U CN201320462798 U CN 201320462798U CN 203351609 U CN203351609 U CN 203351609U
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- contact electrode
- schottky diode
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The utility model discloses a polarized doping-based GaN Schottky diode and belongs to the field of semiconductor devices. The polarized doping-based GaN Schottky diode of the utility model comprises a semi-insulating substrate layer for supporting the whole GaN Schottky diode, a highly-doped N+ type GaN layer grown on the substrate layer and an N-type AlxGa1-xN layer (0 < x < 1) which is grown on the N+ type GaN layer through adopting polarized doping; Al component of the N- type AlxGa1-xN layer (0 < x < 1) is uniformly distributed from the boundary of the N+ type GaN layer; and ohmic contact electrodes and a Schottky contact electrode are arranged on the diode. According to the polarized doping-based GaN Schottky diode of the utility model, the N-type AlxGa1-xN layer (0 < x < 1) which is grown on the N+ type GaN layer through adopting the polarized doping method, such that the migration rate of a GaN material is improved, and therefore, the series resistance of the Schottky diode can be reduced, and the working frequency of the Schottky diode is improved, and as a result, the working frequency and output power of a frequency multiplication circuit in millimeter wave and terahertz ranges can be improved; the variable capacitance ratio of the Schottky diode can be effectively controlled through using the polarized doping, and therefore, the Q value of the device can be improved.
Description
Technical field
The utility model belongs to field of semiconductor devices.
Background technology
Take the conventional semiconductor material such as Si, GaAs basic Schottky frequency multiplication diode component due to the restriction that is subject to the attribute of material own, be difficult to have again further raising on power and the corresponding index such as breakdown voltage resistant.The semiconductor material with wide forbidden band development of new generation that the III group-III nitride of take in recent years is table is swift and violent.There is the superior material properties such as broad-band gap, high saturated electrons drift speed, high disruptive field intensity and high heat conductance, in millimeter wave, submillimeter wave high-power electronic device field, have development potentiality.Schottky diode millimeter wave based on GaN, the research of submillimeter wave frequency doubling device are current international focuses, and domestic research also rests on very low frequency band.
Due to the electron mobility of GaN material, to compare GaAs lower, and the series resistance of the Schottky diode prepared based on the GaN material is very large, makes the cut-off frequency of device and the level that operating frequency is difficult to reach the GaAs device.In addition, the wet corrosion technique of GaN material is also immature, generally adopts dry etching, then carries out planarization process, and device technology has been brought to difficulty.Adopt at present and improve ohmic contact craft and explore the operating frequency that new Schottky contacts metal improves device, the highest 100GHz that reached of operating frequency in the world.Need to start with from the materials and devices structure if will further improve the operating frequency of device, improve the mobility of GaN material, adopt GaAs planarized structure commonly used, reach higher operating frequency.
The concept of polarization doping is proposed by UCSB professor U.K.mishra leader's research group the earliest calendar year 2001, and has carried out the n type material growth of polarization doping.The units such as China Semiconductor institute, Chinese Academy of Sciences, CAS Institute of Physics and University of Electronic Science and Technology have also carried out the work of the growth of polarization dopant material and theoretical research.But all do not carry out the preparation work of polarization Doped GaN schottky diode device both at home and abroad.
The utility model content
The utility model provides a kind of GaN Schottky diode based on the polarization doping, this diode utilization polarization doping way improves the mobility of GaN material and the variable compression ratio of GaN Schottky diode, finally improves operating frequency and the power output of frequency multiplier circuit in millimeter wave and Terahertz scope.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of GaN Schottky diode based on the polarization doping comprises the semi-insulated substrate layer for supporting whole GaN Schottky diode, the highly doped N+ type GaN layer of growing on described substrate layer and the N-type Al that adopts the polarization doped growing on N+ type GaN layer
xga
1-xn(0<x≤1) layer; Described N-type Al
xga
1-xn(0<x≤1) the Al component of layer starts non-uniform Distribution from the interface of N+ type GaN layer; Also be provided with Ohm contact electrode and Schottky contact electrode on described diode.
Described N-type Al
xga
1-xn(0<x≤1) distribution mode of the Al component of layer is for to start increasing or decreasing from the interface of N+ type GaN layer.
Described N+ type GaN layer is divided into two parts and is located at the substrate layer two ends, is respectively equipped with Ohm contact electrode on it, on one of them N+ type GaN layer, also is provided with N-type Al
xga
1-xn(0<x≤1) layer, this N-type Al
xga
1-xn(0<x≤1) layer is provided with Schottky contact electrode, at Schottky contact electrode and the upper surface that is positioned at the Ohm contact electrode of opposite side, is provided with the air bridges cantilever, below the air bridges cantilever, is the deep trench isolation district.
Described N+ type GaN layer is divided into two parts and is located at the substrate layer two ends, on the N+ type GaN layer at two ends, is equipped with N-type Al
xga
1-xn(0<x≤1) layer, wherein the N-type Al of a side
xga
1-xn(0<x≤1) layer is provided with Ohm contact electrode, at the N-of opposite side type Al
xga
1-xn(0<x≤1) layer is provided with step, Ohm contact electrode and Schottky contact electrode lay respectively on different steps, be provided with the air bridges cantilever at Schottky contact electrode and the upper surface that is positioned at the Ohm contact electrode of opposite side, be the deep trench isolation district below the air bridges cantilever.
The doped chemical of described N+ type GaN layer is IV family element, and doping content is 10
16cm
-3to 10
19cm
-3.
On described N+ type GaN layer, growth has Ohm contact electrode; At described N-type Al
xga
1-xn(0<x≤1) on layer, growth has Schottky contact electrode.
The doped chemical of described N+ type GaN layer is IV family element, and doping content is 10
16cm
-3to 10
19cm
-3.
Described substrate layer is Sapphire Substrate, silicon carbide substrates or silicon substrate.
Adopt the technological progress that technique scheme obtains to be: 1, the utility model adopts the polarization doping way N-type Al that grows on N+ type GaN layer
xga
1-xn(0<x≤1) layer, improved the mobility of GaN material, thereby reduced the series resistance of Schottky diode, improved its operating frequency, and then improved operating frequency and the power output of frequency multiplier circuit in millimeter wave and Terahertz scope; 2, utilize the polarization doping way can effectively control the variable compression ratio of Schottky diode, improve the Q value of device; 3, the utility model has adopted some support air bridge construction further to reduce parasitic capacitance, has improved operating frequency and the power output of frequency multiplier circuit in millimeter wave and Terahertz scope.
The accompanying drawing explanation
The structural representation that Fig. 1 is the utility model embodiment 1;
The structural representation that Fig. 2 is embodiment 2;
The structural representation that Fig. 3 is embodiment 3;
Wherein, 101, substrate layer, 102, N+ type GaN layer, 103, N-type Al
xga
1-xn(0<x≤1) layer, 104, Ohm contact electrode, 105, Schottky contact electrode; 106, air bridges cantilever, 107, the deep trench isolation district.
Embodiment
Embodiment 1
Known as shown in Figure 1, GaN Schottky diode based on the polarization doping, comprise the semi-insulated substrate layer 101 for supporting whole GaN Schottky diode, the highly doped N+ type GaN layer 102 of growth on described substrate layer 101 and the N-type Al that adopts the polarization doped growing on N+ type GaN layer 102
xga
1-xn(0<x≤1) layer 103; Described N-type Al
xga
1-xn(0<x≤1) the Al component of layer 103 starts to increase progressively from the interface of N+ type GaN layer 102, can be linear increment, can be also non-linear increasing.The doped chemical of described N+ type GaN layer 102 is IV family element, and doping content is 10
16cm
-3to 10
19cm
-3.
On described N+ type GaN layer 102, growth has Ohm contact electrode 104, and Ohm contact electrode 104 is divided into two parts, is symmetrically set in the both ends of N+ type GaN layer 102, and between Ohm contact electrode 104 and N+ type GaN layer 102, face contacts.At described N-type Al
xga
1-xn(0<x≤1) on layer 103, growth has Schottky contact electrode 105, Schottky contact electrode 105 and N-type Al
xga
1-xn(0<x≤1) 103 contact of layer.
In the present embodiment, substrate layer 101 is Sapphire Substrate; Described Ohm contact electrode 104 is formed by high temperature rapid thermal annealing by the evaporated metal layer, and this evaporated metal layer is formed by the titanium deposited successively, aluminium, nickel, gold, and described Schottky contact electrode 105 is formed by titanium, platinum, gold the evaporated metal layer of precipitation successively.
The making step of this Schottky diode is:
1. prepare semi-insulated substrate layer 101;
2. the highly doped N+ type GaN layer 102 of epitaxial growth on substrate layer 101, doped chemical is IV family element, as the Si element, doping content is controlled at 10
16cm
-3to 10
19cm
-3;
3. adopt polarization doping method epitaxial growth N-type Al on N+ type GaN layer 102
xga
1-xn(0<x≤1) layer 103, in this layer, the Al component starts to adopt gradual change polarization doping method to increase progressively growth from the interface of N+ type GaN layer 102, and the variation tendency of Al component is: become gradually large from interface;
4, remove N-type Al by wet etching or dry etch process
xga
1-xn(0<x≤1) part at layer 103 two ends, expose N+ type GaN layer 102, at N-type Al
xga
1-xn(0<x≤1) form step between layer 103 and N+ type GaN layer 102, on exposed N+ type GaN layer 102, adopt electron beam evaporation method evaporated metal layer to make Ohm contact electrode 104, be specially titanium, aluminium, nickel, the gold of precipitation successively, and carry out alloy at 800 degree with quick anneal oven under 900 degree, to reduce the resistivity of Ohm contact electrode 104;
5. expose N-type Al by the method for photoetching
xga
1-xn(0<x≤1) layer 103, deposited by electron beam evaporation method evaporated metal, be specially titanium, platinum, gold, at the N-type Al of polarization doping
xga
1-xn(0<x≤1) layer 103 surface form Schottky contact electrode 105.
Described substrate layer 101 is Sapphire Substrate.
Embodiment 2
Known as shown in Figure 2, as different from Example 1, described N-type Al
xga
1-xn(0<x≤1) the Al component of layer 103 starts to successively decrease from the interface of N+ type GaN layer 102.
Described N+ type GaN layer 102 is divided into two parts and is located at substrate layer 101 two ends, is respectively equipped with Ohm contact electrode 104 on it, on one of them N+ type GaN layer 102, also is provided with N-type Al
xga
1-xn(0<x≤1) layer 103, this N-type Al
xga
1-xn(0<x≤1) layer 103 is provided with Schottky contact electrode 105, at Schottky contact electrode 105 and the upper surface that is positioned at the Ohm contact electrode 104 of opposite side, is provided with air bridges cantilever 106, below air bridges cantilever 106, is deep trench isolation district 107.
Below air bridges cantilever 106, be provided with deep trench isolation district 107, the Schottky contact electrode 105 that will be connected with air bridges cantilever 106, Ohm contact electrode 104 and following N+ type GaN layer 102, N-type Al
xga
1-xn(0<x≤1) layer 103 is separated.
In the present embodiment, substrate layer 101 can also be other semi-conducting materials such as Si for SiC(); Described Ohm contact electrode 104 is formed by high temperature rapid thermal annealing by the evaporated metal layer, and this evaporated metal layer is formed by the titanium deposited successively, aluminium, nickel, gold, and described Schottky contact electrode 105 is formed by titanium, platinum, gold the evaporated metal layer of precipitation successively.
The manufacture method of this embodiment is:
1. prepare semi-insulated substrate layer 101;
2. the highly doped N+ type GaN layer 102 of epitaxial growth on substrate layer 101, doped chemical is IV family element, as the Si element, doping content is controlled at 10
16cm
-3to 10
19cm
-3;
3. adopt polarization doping method epitaxial growth N-type Al on 102 layers
xga
1-xn(0<x≤1) layer 103, in this layer, the Al component starts to adopt the growth of successively decreasing of gradient doping method from the interface of N+ type GaN layer 5, and the variation tendency of Al component is: from interface, start to diminish gradually;
4. remove N-type Al by wet etching or dry etch process
xga
1-xn(0<x≤1) part at layer 103 two ends, expose N+ type GaN layer 102, at N-type Al
xga
1-xn(0<x≤1) form step between layer 103 and N+ type GaN layer 102, on exposed N+ type GaN layer 102, adopt electron beam evaporation method evaporated metal layer to make Ohm contact electrode 104, be specially titanium, aluminium, nickel, the gold of precipitation successively, and carry out alloy at 800 degree with quick anneal oven under 900 degree, to reduce the resistivity of Ohm contact electrode 104;
5. expose the not N-type Al of etching by the method for photoetching
xga
1-xn(0<x≤1) layer 103, the deposited by electron beam evaporation metal, as titanium, platinum, gold, at the N-type Al of polarization doping
xga
1-xn(0<x≤1) layer 103 surface form Schottky contact electrode 105;
6. expose by the method for photoetching the material of wanting etching, adopt the method for ICP etching, etch away N-type Al
xga
1-xn(0<x≤1) layer 103 and GaN layer 102, as shown in Figure 3, realize deep trench isolation district 107, some substrate layers 101 of over etching a little while needing;
7. be coated with one deck PMGI S15 type photoresist, stay near the glue of deep trouth after photoetching development, keep flat on hot plate, hot plate temperature is 220 degrees centigrade, maintains about 30 minutes, and photoresist becomes liquid state, flow into by Action of Gravity Field in the deep trouth in deep trench isolation district 107, groove is filled and led up;
8. be coated with 660 type photoresists, the shape of air bridges cantilever 6 is exposed in photoetching, by magnetron sputtering Ti/Au, electroplate Au, corrode afterwards the magnetron sputtering metal, stayed electrodeposited coating, built air bridges cantilever 106 after removing photoresist and PMGI S15 glue, Schottky contact electrode 105 has been guided on Ohm contact electrode 104;
9. with polishing, substrate layer 101 is thinned to below 50um, carries out burst and sliver, finally obtain discrete device.
Embodiment 3
Known as shown in Figure 3, as different from Example 2, described N+ type GaN layer 102 is divided into two parts and is located at substrate layer 101 two ends, and N+ type GaN layer 102 is provided with N-type Al
xga
1-xn(0<x≤1) layer 103, N-type Al
xga
1-xn(0<x≤1) layer 103 is provided with Ohm contact electrode 104, therein the N-type Al of a side
xga
1-xn(0<x≤1) layer 103 is provided with step, and Ohm contact electrode 104 and Schottky contact electrode 105 lay respectively on different steps, at Schottky contact electrode 105 and the upper surface that is positioned at the Ohm contact electrode 104 of opposite side, is provided with air bridges cantilever 106.
Also have difference on manufacture craft, corresponding with step 4 in embodiment 2, the step 4 of this embodiment should be: by wet etching or dry etch process, remove N-type Al
xga
1-xn(0<x≤1) part of layer 103, thickness is 100 ~ 200nm, exposes N-type Al
xga
1-xn(0<x≤1) bottom of layer 103, at N-type Al
xga
1-xn(0<x≤1) form step on layer 103, at exposed N-type Al
xga
1-xn(0<x≤1) on layer 103 bottom, adopt electron beam evaporation method evaporated metal layer to make Ohm contact electrode 104, be specially titanium, aluminium, nickel, the gold of precipitation successively, and carry out alloy at 400 degree with quick anneal oven under 700 degree, to reduce the resistivity of Ohm contact electrode 104.
The utility model adopts the polarization doping way N-type Al that grows on N+ type GaN layer
xga
1-xn(0<x≤1) layer, improved the mobility of GaN material, thereby reduced the series resistance of Schottky diode, improved its operating frequency, adopt some support air bridge construction and substrate thinning technique further to reduce parasitic capacitance, and then improved operating frequency and the power output of frequency multiplier circuit in millimeter wave and Terahertz scope.
Claims (8)
1. the GaN Schottky diode based on the polarization doping, is characterized in that comprising the semi-insulated substrate layer (101) for supporting whole GaN Schottky diode, the highly doped N+ type GaN layer (102) of above growing at described substrate layer (101) and above adopt the N-type Al of polarization doped growing at N+ type GaN layer (102)
xga
1-xn(0<x≤1) layer (103); Described N-type Al
xga
1-xn(0<x≤1) the Al component of layer (103) starts non-uniform Distribution from the interface of N+ type GaN layer (102); Also be provided with Ohm contact electrode (104) and Schottky contact electrode (105) on described diode.
2. the GaN Schottky diode based on the polarization doping according to claim 1, is characterized in that described N-type Al
xga
1-xn(0<x≤1) distribution mode of the Al component of layer (103) is for to start increasing or decreasing from the interface of N+ type GaN layer (102).
3. the GaN Schottky diode based on polarization doping according to claim 1 and 2, it is characterized in that described N+ type GaN layer (102) is divided into two parts and is located at substrate layer (101) two ends, be respectively equipped with Ohm contact electrode (104) on it, on one of them N+ type GaN layer (102), also be provided with N-type Al
xga
1-xn(0<x≤1) layer (103), this N-type Al
xga
1-xn(0<x≤1) layer (103) is provided with Schottky contact electrode (105), being provided with air bridges cantilever (106) at Schottky contact electrode (105) and the upper surface that is positioned at the Ohm contact electrode (104) of opposite side, is deep trench isolation district (107) in air bridges cantilever (106) below.
4. the GaN Schottky diode based on the polarization doping according to claim 1 and 2, is characterized in that described N+ type GaN layer (102) is divided into two parts and is located at substrate layer (101) two ends, on the N+ type GaN layer (102) at two ends, is equipped with N-type Al
xga
1-xn(0<x≤1) layer (103), wherein the N-type Al of a side
xga
1-xn(0<x≤1) layer (103) is provided with Ohm contact electrode (104), at the N-of opposite side type Al
xga
1-xn(0<x≤1) layer (103) is provided with step, Ohm contact electrode (104) and Schottky contact electrode (105) lay respectively on different steps, being provided with air bridges cantilever (106) at Schottky contact electrode (105) and the upper surface that is positioned at the Ohm contact electrode (104) of opposite side, is deep trench isolation district (107) in air bridges cantilever (106) below.
5. the GaN Schottky diode based on polarization doping according to claim 3, the doped chemical that it is characterized in that described N+ type GaN layer (102) is IV family element, doping content is 10
16cm
-3to 10
19cm
-3.
6. the GaN Schottky diode based on the polarization doping according to claim 1 and 2, is characterized in that, in the upper growth of described N+ type GaN layer (102), Ohm contact electrode (104) is arranged; At described N-type Al
xga
1-xn(0<x≤1) the upper growth of layer (103) has Schottky contact electrode (105).
7. the GaN Schottky diode based on polarization doping according to claim 1, the doped chemical that it is characterized in that described N+ type GaN layer (102) is IV family element, doping content is 10
16cm
-3to 10
19cm
-3.
8. the GaN Schottky diode based on the polarization doping according to claim 1, is characterized in that described substrate layer (101) is Sapphire Substrate, silicon carbide substrates or silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320462798 CN203351609U (en) | 2013-07-31 | 2013-07-31 | Polarized doping-based GaN Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320462798 CN203351609U (en) | 2013-07-31 | 2013-07-31 | Polarized doping-based GaN Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203351609U true CN203351609U (en) | 2013-12-18 |
Family
ID=49751469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320462798 Withdrawn - After Issue CN203351609U (en) | 2013-07-31 | 2013-07-31 | Polarized doping-based GaN Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203351609U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400865A (en) * | 2013-07-31 | 2013-11-20 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN Schottky diode |
| CN108336150A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | The preparation method of Schottky diode, schottky diode array and Schottky diode |
| CN111599872A (en) * | 2020-05-25 | 2020-08-28 | 中国科学院国家空间科学中心 | Preparation method of GaN-based planar Schottky varactor |
-
2013
- 2013-07-31 CN CN 201320462798 patent/CN203351609U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400865A (en) * | 2013-07-31 | 2013-11-20 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN Schottky diode |
| CN103400865B (en) * | 2013-07-31 | 2016-07-13 | 中国电子科技集团公司第十三研究所 | GaN Schottky diode based on polarization doping |
| CN108336150A (en) * | 2017-01-20 | 2018-07-27 | 清华大学 | The preparation method of Schottky diode, schottky diode array and Schottky diode |
| CN108336150B (en) * | 2017-01-20 | 2020-09-29 | 清华大学 | Schottky diode, Schottky diode array and preparation method of Schottky diode |
| CN111599872A (en) * | 2020-05-25 | 2020-08-28 | 中国科学院国家空间科学中心 | Preparation method of GaN-based planar Schottky varactor |
| CN111599872B (en) * | 2020-05-25 | 2023-07-07 | 中国科学院国家空间科学中心 | Preparation method of GaN-based planar Schottky varactor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103400865B (en) | GaN Schottky diode based on polarization doping | |
| CN103400866B (en) | GaN Schottky diode based on modulation doping | |
| CN102610638B (en) | SiC-bipolar junction transistor (SiC-BJT) device for power integrated circuit and manufacturing method of SiC-BJT device | |
| CN104851921B (en) | A kind of GaN base Schottky diode of vertical stratification and preparation method thereof | |
| CN101694842B (en) | Power AlGaN/GaN Schottky diode and manufacturing method thereof | |
| CN108281491A (en) | A kind of silicon carbide power device and preparation method thereof with step structure | |
| CN107170680A (en) | A kind of GaN base Schottky diode preparation method of quasi- vertical stratification | |
| CN103745992B (en) | AlGaN/GaN MISHEMT high tension apparatus based on compound drain electrode and preparation method thereof | |
| CN203351609U (en) | Polarized doping-based GaN Schottky diode | |
| CN109545842A (en) | Silicon carbide device terminal structure and preparation method thereof | |
| CN109755325A (en) | A kind of novel double-groove type metal oxide semiconductor barrier Schottky diode structure and implementation method | |
| CN105895708A (en) | GaN-based power diode and preparation method thereof | |
| CN204596798U (en) | A kind of GaN base Schottky diode of vertical stratification | |
| CN110534559A (en) | A kind of sic semiconductor device terminal and its manufacturing method | |
| CN109659363A (en) | A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure | |
| CN108206220A (en) | The preparation method of diamond Schottky diode | |
| CN102054875B (en) | Power type GaN base Schottky diode and manufacture method thereof | |
| CN104393045A (en) | Novel GaN-base reinforced HEMT device and manufacturing method thereof | |
| CN116666428A (en) | Gallium nitride Schottky diode and preparation method thereof | |
| CN103441152A (en) | Trench MOS barrier Schottky diode and manufacturing method | |
| CN109390233A (en) | A kind of manufacturing method of channel schottky | |
| CN203351610U (en) | Modulated doping-based GaN Schottky diode | |
| CN105185841B (en) | A kind of field-effect diode and preparation method thereof | |
| CN114927576A (en) | Low-leakage high-temperature-resistant gallium oxide heterojunction diode and preparation method thereof | |
| CN209266411U (en) | A kind of high-performance transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131218 Effective date of abandoning: 20160713 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |