CN203300645U - 一种单相整流桥 - Google Patents

一种单相整流桥 Download PDF

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Publication number
CN203300645U
CN203300645U CN2013203079406U CN201320307940U CN203300645U CN 203300645 U CN203300645 U CN 203300645U CN 2013203079406 U CN2013203079406 U CN 2013203079406U CN 201320307940 U CN201320307940 U CN 201320307940U CN 203300645 U CN203300645 U CN 203300645U
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copper
backlight unit
diode chip
copper sheets
diode chips
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Expired - Fee Related
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CN2013203079406U
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范涛
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ZHEJIANG GUCHI ELECTRONICS CO Ltd
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ZHEJIANG GUCHI ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

一种单相整流桥，包括设于基板上，且按单相整流桥电路连接的两个铜片、四只二极管芯片和四个引出电极，其特征是：所述两铜片分别设在铝基覆铜板相对二边，四只二极管芯片分别焊接在两铜片端面上，两铜片同端的两只二极管芯片顶面分别由连桥电连接。其设置的四只二极管芯片设置比较分散，散热效果增强，可靠性提高，以及引出电极加工方便。

Description

一种单相整流桥
技术领域
本实用新型涉及一种半导体器件，特别是一种单相整流桥。
背景技术
现有技术的单相整流桥通常如图1、图2所示，由设于铝基覆铜板上，且按单相整流桥电路连接的两个铜片、四个二极管芯片和四个引出电极构成。所述两铜片如图2所示为三角形，且分别设置在铝基覆铜板的相对两角上，而四只二极管芯片分别设置在两铜片的相邻角上，其两铜片相邻角上的两只二极管芯片顶面由相应的引出电极分别连接。
目前，由于上述普通述单相整流桥中的四个二极管芯片分别设置在两铜片的相邻角上，且其相邻角上的两个二极管芯片距离较近，工作时该二极管芯片产生的热量相对集中，从而容易导致整个产品局部温度过高，使得二极管芯片散热效果和工作可靠性均受到影响。另外，与两个二极管芯片顶面相应连接的两个引出电极，其底部形状均为水平直角体，且该水平直角体与其引出电极的上部又形成直角弯折，因而其加工需要多道工序，比较麻烦。
发明内容
本实用新型为了解决上述普通单相整流桥存在的问题，新提供一种单相整流桥，使其二极管芯片散热效果增强，可靠性提高，引出电极加工方便。
本实用新型所述的一种单相整流桥，包括设于基板上，且按单相整流桥电路连接的两个铜片、四只二极管芯片和四个引出电极，其特征是：所述两铜片分别设在基板相对二边，四只二极管芯片分别焊接在两铜片端面上，两铜片同端的两只二极管芯片顶面分别由连桥电连接。
进一步，所述基板为铝基覆铜板，或者由铜板和陶瓷覆铜板焊接构成。
更进一步，所述连桥中部均朝上弯拱。
本实用新型的有益技术效果是：通过将四只二极管芯片分散设置在两铜片的端头上，以及采用连桥将两铜片同端的两只二极管芯片顶面电连接，使二极管芯片散热效果增强，可靠性提高，引出电极加工方便。
附图说明
图１为普通单相整流桥的俯视结构示意图。
图2为图１中的铜片结构放大示意图。
图3为本实用新型实施例的俯视结构示意图。
图4为图3中的铜片结构放大示意图。
图5为本实用新型的电路结构示意图。
具体实施方式
附图标注说明：基板1、二极管芯片2、连桥（3、7）、铜片（4、41）、引出电极（5、51、8、81）、引出电极底部50、柱孔6。
如图3-图5所示，一种单相整流桥，包括设于基板1上，且按单相整流桥电路连接的两个铜片4、四只二极管芯片2和四个引出电极（5、8），所述两铜片4分别设在基板1相对二边，四只二极管芯片2分别焊接在两铜片4端面上，两铜片4同端的两只二极管芯片2顶面分别由连桥（3、7）电连接。
所述基板1为铝基覆铜板，或者由由铜板和陶瓷覆铜板焊接构成。其散热效果均较好。
所述连桥（3、7）中部均朝上弯拱。这样可以减少连桥（3、7）对其两端连接的二极管芯片2的应力作用，并增加了散热面积，有利二极管芯片2更好散热。
应用时，所述基板1上按常规在其中间设有柱孔6，以及设置与该柱孔6相应的中心柱，然后采用绝缘外壳和环氧树脂封装。
本实用新型是将四只二极管芯片2较分散地设置在两铜片4端面上，并且采用连桥连接两铜片4同端的两只二极管芯片2顶面，从而使得二极管芯片产生的热量相对分散，其散热效果增强，可靠性提高。而且与普通单相整流桥比，本实用新型中的各引出电极结构均比较简单，加工方便。
应该理解到的是：上述实施例只是对本实用新型的说明，任何不超出本实用新型实质精神范围内的发明创造，均落入本实用新型的保护范围之内。

Claims (3)

1.一种单相整流桥，包括设于基板上，且按单相整流桥电路连接的两个铜片、四只二极管芯片和四个引出电极，其特征是：所述两铜片分别设在铝基覆铜板相对二边，四只二极管芯片分别焊接在两铜片端面上，两铜片同端的两只二极管芯片顶面分别由连桥电连接。
2.根据权利要求1所述的一种单相整流桥，其特征是：所述基板为铝基覆铜板，或者由铜板和陶瓷覆铜板焊接构成。
3.根据权利要求1或2所述的一种单相整流桥，其特征是：所述连桥中部均朝上弯拱。
CN2013203079406U 2013-05-31 2013-05-31 一种单相整流桥 Expired - Fee Related CN203300645U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764387A (zh) * 2021-09-03 2021-12-07 泗洪明芯半导体有限公司 一种整体式框架整流桥及其加工工艺

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764387A (zh) * 2021-09-03 2021-12-07 泗洪明芯半导体有限公司 一种整体式框架整流桥及其加工工艺
CN113764387B (zh) * 2021-09-03 2024-08-30 泗洪明芯半导体有限公司 一种整体式框架整流桥及其加工工艺

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Granted publication date: 20131120