CN203277487U - N electrode connection structure of LED flip chip - Google Patents

Abstract

The utility model relates to an LED flip chip and more specifically relates to an N electrode connection structure of an LED flip chip. The N electrode connection structure of the LED flip chip is brought forward so that the LED flip chip can well emit light, currents of an N contact layer on the chip can be evenly distributed, and the N contact layer can be convenient to manufacture and weld. The bottom of the chip is provided with at least two sink pits which pass through a P-type layer and an active illuminating layer to reach an N semiconductor layer. The N electrode connection structure is characterized in that the sidewall of each sink pit is equipped with an insulating layer, and the bottom of the chip is also equipped with an insulating layer; the N contact layer of the chip includes sink portions and connection portions; the sink portions enter the sink pits to contact the N semiconductor layer, and the connection portions cover the surface of the insulating layer on the bottom of the chip to connect all the sink portions in the different sink pits; and the N contact layer is formed by vapor plating or sputtering.

Description

The N electrode connecting structure of LED flip-chip

Technical field

The invention relates to the LED flip-chip, is specifically related to its N electrode connecting structure.

Background technology

LED flip-chip bottom surface has that P type layer is passed in heavy hole and active illuminating layer passes to the N semiconductor layer.The N contact layer is located in heavy hole, touches logical with the N semiconductor layer.At present, the shortcoming of LED flip-chip is:

(1) need to reserve certain distance between N contact layer and heavy hole sidewall to avoid short circuit, this makes heavy hole need take larger cross-sectional area, causes the active illuminating layer area to reduce, and affects illumination effect;

(2) on chip, the electric current of N contact layer is gathered in place, heavy hole, skewness;

(3) make CURRENT DISTRIBUTION even if open a plurality of heavy holes, the N contact layer is repeatedly made and welds with regard to correspondingly needing.

Summary of the invention

The purpose of the invention is to allow the LED flip-chip obtain illumination effect preferably, and on chip, the CURRENT DISTRIBUTION of N contact layer is even, and the N contact layer is made and convenient welding.

Provide the N electrode connecting structure of LED flip-chip, die bottom surface has that P type layer is passed at least two heavy holes and active illuminating layer passes to the N semiconductor layer for this reason, and it is characterized in that: heavy hole sidewall and die bottom surface are provided with insulating barrier; The N contact layer of chip comprises the section of sinking to and connecting portion, and the section of sinking to enters and touches logical N semiconductor layer in heavy hole, and the surface that connecting portion covers the insulating barrier of die bottom surface has connected to lay respectively at differently heavyly cheats interior each and sink to section.The N contact layer is that evaporation or sputter form.

Beneficial effect:

(1) heavy hole sidewall is provided with insulating barrier, just need not reserve more distance between N contact layer and heavy hole sidewall, is conducive to reduce heavy the hole the taking of cross-sectional area, thereby allows active illuminating layer that larger area can be arranged, and finally obtains illumination effect preferably;

(2) the N contact layer touches logical N semiconductor layer by a plurality of heavy holes, makes the CURRENT DISTRIBUTION of N contact layer on chip even;

(3) because having connected, each section of being connected of section of sinking to of N contact layer realizes being interconnected, so the N contact layer can disposablely complete, and only need connecting portion is once welded to realize that each sinks to the conducting of section, need not each section of sinking to is welded respectively;

(4) making of N contact layer need not to go deep into the chip internal layer, can complete making in die bottom surface.

Prior art can't obtain above-mentioned four beneficial effects simultaneously.

Description of drawings

Fig. 1 is the N electrode connecting structure schematic diagram of LED flip-chip.

Embodiment

As Fig. 1, LED flip-chip bottom surface has that P type layer 3 is passed at least two heavy holes 9 and active illuminating layer 4 passes to N semiconductor layer 5, and heavy hole 9 sidewalls are provided with insulating barrier 21, and die bottom surface is provided with insulating barrier 22; N contact layer 1 part is to sink to section 11, and it enters interior the touching in heavy hole 9 and leads to N semiconductor layer 5; Another part is connecting portion 12, and its surface that covers the insulating barrier 22 of die bottom surface has connected and lays respectively at each in different heavy holes 9 and sink to section 11.The N contact layer 1 of chip is evaporation or sputters at insulating barrier 21,22 surface, can disposablely complete that each sinks to section 11 and connecting portion 12, forms the N electrode connecting structure.

Claims (3)

1.LED the N electrode connecting structure of flip-chip, die bottom surface have, and P type layer is passed at least two heavy holes and active illuminating layer passes to the N semiconductor layer, it is characterized in that: heavy hole sidewall and die bottom surface are provided with insulating barrier; The N contact layer of chip comprises the section of sinking to and connecting portion, and the section of sinking to enters and touches logical N semiconductor layer in heavy hole, and the surface that connecting portion covers the insulating barrier of die bottom surface has connected to lay respectively at differently heavyly cheats interior each and sink to section.

2. N electrode connecting structure according to claim 1, is characterized in that, the N contact layer is that evaporation forms.

3. N electrode connecting structure according to claim 1, is characterized in that, the N contact layer is that sputter forms.

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