CN103247735A - N-electrode connection structure of LED flip chip - Google Patents

Abstract

The invention relates to an LED flip chip, in particular to an N-electrode connection structure, and aims to enable the LED flip chip to acquire a better illumination effect, the current distribution on an N contact layer on the chip to be uniform, and the N contact layer to be convenient to manufacture and weld. According to the N-electrode connection structure of the LED flip chip, at least two sunk pits which penetrate through a P type layer and an active emitting layer to be communicated with an N semiconductor layer are formed in the bottom surface of the chip. The connection structure is characterized in that insulation layers are arranged on side walls of the sunk pits and the bottom surface of the chip; the N contact layer of the chip comprises settling parts and a connecting part, wherein the settling parts enter the sunk pits to be contacted and communicated with the N semiconductor layer; the connecting part covers the surfaces of the insulation layer on the bottom surface of the chip so as to connect the settling parts located in various sunk pits; and the N contact layer is formed by vapor deposition or sputtering.

Description

The N electrode connecting structure of LED flip-chip

Technical field

The invention relates to the LED flip-chip, is specifically related to its N electrode connecting structure.

Background technology

LED flip-chip bottom surface has that P type layer is passed in heavy hole and active illuminating layer passes to the N semiconductor layer.The N contact layer is located in the heavy hole, touches logical with the N semiconductor layer.At present, the shortcoming of LED flip-chip is:

(1) need to reserve certain distance between N contact layer and the heavy hole sidewall to avoid short circuit, this makes heavy hole need take bigger cross-sectional area, causes the active illuminating layer area to reduce, and influences illumination effect;

(2) electric current of N contact layer accumulates in place, heavy hole, skewness on the chip;

(3) make CURRENT DISTRIBUTION even if open a plurality of heavy holes, the N contact layer is repeatedly made and is welded with regard to correspondingly needing.

Summary of the invention

The purpose of the invention is to allow the LED flip-chip obtain illumination effect preferably, and the CURRENT DISTRIBUTION of N contact layer is even on the chip, and the N contact layer is made and convenient welding.

Provide the N electrode connecting structure of LED flip-chip, die bottom surface has that P type layer is passed at least two heavy holes and active illuminating layer passes to the N semiconductor layer for this reason, and it is characterized in that: heavy hole sidewall and die bottom surface are provided with insulating barrier; The N contact layer of chip comprises the portion of sinking to and connecting portion, and the portion of sinking to enters and touches logical N semiconductor layer in the heavy hole, and the surface that connecting portion covers the insulating barrier of die bottom surface has connected to lay respectively at differently heavyly cheats interior each and sink to portion.The N contact layer is that evaporation or sputter form.

Beneficial effect:

(1) heavy hole sidewall is provided with insulating barrier, just need not reserve more distance between N contact layer and the heavy hole sidewall, is conducive to reduce heavy the hole the taking of cross-sectional area, thereby allows active illuminating layer that bigger area can be arranged, and finally obtains illumination effect preferably;

(2) the N contact layer touches logical N semiconductor layer by a plurality of heavy holes, makes that the CURRENT DISTRIBUTION of N contact layer is even on the chip;

(3) because having connected, each portion of being connected of portion of sinking to of N contact layer realizes being interconnected, so the N contact layer can disposablely complete, and only need once weld connecting portion and can realize that each sinks to the conducting of portion, need not each portion of sinking to is welded respectively;

(4) making of N contact layer need not to go deep into the chip internal layer, can finish making in die bottom surface.

Prior art can't obtain above-mentioned four beneficial effects simultaneously.

Description of drawings

Fig. 1 is the N electrode connecting structure schematic diagram of LED flip-chip.

Embodiment

As Fig. 1, LED flip-chip bottom surface has that P type layer 3 is passed at least two heavy holes 9 and active illuminating layer 4 passes to N semiconductor layer 5, and heavy hole 9 sidewalls are provided with insulating barrier 21, and die bottom surface is provided with insulating barrier 22; N contact layer 1 part is to sink to portion 11, and it enters and touches logical N semiconductor layer 5 in the heavy hole 9; Another part is connecting portion 12, and its surface that covers the insulating barrier 22 of die bottom surface has connected and lays respectively in the different heavy holes 9 each and sink to portion 11.The N contact layer 1 of chip is evaporation or sputters at insulating barrier 21,22 surface, can disposablely complete that each sinks to portion 11 and connecting portion 12, forms the N electrode connecting structure.

Claims (3)

1.LED the N electrode connecting structure of flip-chip, die bottom surface have, and P type layer is passed at least two heavy holes and active illuminating layer passes to the N semiconductor layer, it is characterized in that: heavy hole sidewall and die bottom surface are provided with insulating barrier; The N contact layer of chip comprises the portion of sinking to and connecting portion, and the portion of sinking to enters and touches logical N semiconductor layer in the heavy hole, and the surface that connecting portion covers the insulating barrier of die bottom surface has connected to lay respectively at differently heavyly cheats interior each and sink to portion.

2. N electrode connecting structure according to claim 1 is characterized in that, the N contact layer is that evaporation forms.

3. N electrode connecting structure according to claim 1 is characterized in that, the N contact layer is that sputter forms.

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