CN203277465U - Nano-Si thin-film solar cell of graded band-gap structure - Google Patents
Nano-Si thin-film solar cell of graded band-gap structure Download PDFInfo
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- CN203277465U CN203277465U CN2013201793181U CN201320179318U CN203277465U CN 203277465 U CN203277465 U CN 203277465U CN 2013201793181 U CN2013201793181 U CN 2013201793181U CN 201320179318 U CN201320179318 U CN 201320179318U CN 203277465 U CN203277465 U CN 203277465U
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- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The utility model discloses a nano-Si thin-film solar cell of a graded band-gap structure, which comprises a glass substrate, a transparent conductive film, a silicon thin-film solar cell and a back electrode. The silicon thin-film solar cell is in the form of a unijunction silicon thin-film solar cell or a multijunction laminated silicon thin-film solar cell. The I layer of the unijunction silicon thin-film solar cell and the I layer of each layer of the multijunction laminated silicon thin-film solar cell are provided with a nano-Si thin film of a graded band-gap structure respectively. According to the technical scheme of the utility model, due to the adoption of the nano-Si thin film of the graded band-gap structure arranged in each I layer (namely the light absorption layer) of the nano-Si cell, the solar energy of different wave bands can be fully absorbed, and the photohole transmission is also improved. In this way, the photoelectric conversion efficiency of the cell is effectively improved. Meanwhile, due to the adoption of the graded light absorption layer, the problem in the prior art that the open-circuit voltage of a nano-Si solar cell is low is solved. In addition, due to the adoption of the graded structure, the difference between the band gaps of the P layer and the N layer is minimized, so that the band-gap mismatching problem of the P/I interface and the I/N interface is solved to a large extent. Therefore, the interface effect of heterojunctions is avoided and the light-induced degradation effect is reduced. The cost is also lowered.
Description
Technical field
The utility model relates to silicon film solar batteries field, particularly a kind of graded bandgap thin-film solar cell of nano silicon.
Background technology
Silicon-film solar-cell has raw materials consumption few, is easy to the large tracts of land serialization and produces, and preparation process is polluted the advantages such as little; It is the important development direction of photovoltaic cell.There is the light-induced degradation effect in amorphous silicon battery, and this has limited his development, and the material order of nano-silicon (microcrystal silicon) solar cell is good, substantially without decline, and can and amorphous silicon battery raise the efficiency in conjunction with preparing laminated cell, reduce costs.Existing thin-film solar cell of nano silicon can not fully absorb the solar energy of different-waveband, and energy conversion efficiency is low, photo attenuation reaches greatly the nano-silicon solar batteries and fill factor, curve factor is lower.
The utility model content
The purpose of this utility model is to solve the problem that traditional silicon thin film solar cell conversion efficiency is low, photo attenuation reaches greatly the nano-silicon solar batteries and fill factor, curve factor is lower, and a kind of graded bandgap thin-film solar cell of nano silicon is provided.
The technical scheme that realizes the utility model purpose is a kind of graded bandgap thin-film solar cell of nano silicon, comprises glass substrate, nesa coating, silicon film solar batteries and back electrode; Described silicon film solar batteries is the unijunction silicon film solar batteries or ties the laminated-silicon thin film solar cell more; The I layer of every layer of battery of the I layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopts the graded bandgap Nano thin film.
Described graded bandgap Nano thin film is the mixing phase material that is comprised of amorphous silicon, grain and grain boundary; The band gap of crystalline silicon is 1.12eV, and amorphous silicon is 1.75eV; The Nano thin film crystallization rate scope of described device quality level is 40%-70%; The band gap of described graded bandgap Nano thin film is 1.3eV ~ 1.5eV; Described graded bandgap Nano thin film forms " C " type grading structure by the graded bandgap of a 1200nm, and band gap is from the 1.7eV alternation to 1.3eV; The highest crystallization rate of Nano thin film is 70%; Perhaps form " V " type grading structure by two graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap is 900nm, and band gap is from the 1.3eV alternation to 1.5eV, and the Nano thin film crystallization rate is 70%-40%; Perhaps form " U " type grading structure by three graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 600nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap is 300nm, and from the 1.3eV alternation to 1.5eV, the Nano thin film crystallization rate is 70%-40%; Perhaps form " E " type grading structure by four graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 300nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap thickness is 300nm, and from the 1.3eV alternation to 1.43eV, the Nano thin film crystallization rate is 70%-51%; The 4th graded bandgap thickness is 300nm, and from the 1.43eV alternation to 1.5eV, the Nano thin film crystallization rate is 51%-40%.
The N layer of every layer of battery of the N layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopts N-type nc-SiOx:H film.
Described back electrode is the composite membrane of ZnO and Ag/Al.
The described silicon film solar batteries binode laminated-silicon thin film solar cell that top battery and end battery consist of of serving as reasons; The N of described top battery
1Layer is nc-SiOx:H/nc-Si:H, I
1Layer is a-Si:H, P
1Layer is a-SiC:H; The N of battery of the described end
2Layer is a-Si:H, I
2Layer is nc-Si:H, P
2Layer is nc-Si:H.
After having adopted technique scheme, the utlity model has following useful effect: the I layer of (1) nano-silicon battery of the present utility model (being also light absorbing zone) adopts the graded bandgap Nano thin film, fully absorb the solar energy of different-waveband, also improved the transmission of photohole, thereby can effectively improve the photoelectric conversion efficiency of battery, reduce the light-induced degradation effect, reduce costs; Simultaneously, gradual change light absorbing zone structure has solved the lower problem of nano-silicon solar batteries, and grading structure makes the band gap difference of itself and P layer and N layer less, has solved largely the band gap mismatch problems at P/I, I/N interface, avoided the interfacial effect of heterojunction
(2) graded bandgap Nano thin film of the present utility model changes within the specific limits by the controlling crystallizing rate, makes the formation graded bandgap, and preparation is simple, and need not to mix new unit and usually change band gap, and preparation cost is low.
(3) the N layer of graded bandgap thin-film solar cell of nano silicon of the present utility model adopts the N-type nc-SiOx:H layer that high electricity is led, it is when serving as NP and then wearing the part N layer of knot, also played the effect that increases anti-film, make the orange light of part return to the top battery, allow its heavy absorption, increase the short circuit current of top battery, solved the problem of top battery current density refractory and top battery and end battery current density matching, having solved top battery high electric current needs the problem of higher caliper, make top cell thickness attenuate, like this, the Cost And Performance of battery all improves; Simultaneously, other layer of N-type nc-SiOx:H layer and battery is directly completed at the CVD reaction chamber, has solved traditional layer of metal oxide that adds separately and increase the problem of anti-film between two batteries, has simplified the preparation method, has reduced preparation cost.
(4) back electrode of graded bandgap thin-film solar cell of nano silicon of the present utility model adopts the structure of composite membrane of ZnO and Ag/Al, ZnO/Ag has played and has increased anti-effect, can further improve the short circuit current of battery at the bottom of nano-silicon, the high conductivity of Ag can effectively promote the conversion efficiency of battery simultaneously.
(5) principle of the present utility model can also expand the graded bandgap structure of other thickness, is applicable to too the reversed structure battery, and is easy to realize the preparation of assembly.
Description of drawings
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings
Fig. 1 is a kind of concrete structure schematic diagram of graded bandgap thin-film solar cell of nano silicon of the present utility model.
Fig. 2 is " C " of the present utility model type grading structure.
Fig. 3 is " V " of the present utility model type grading structure.
Fig. 4 is " U " of the present utility model type grading structure.
Fig. 5 is " E " of the present utility model type grading structure.
Attached number in the figure is:
Embodiment
The graded bandgap nc Si thin film of this embodiment is the mixing phase material that is comprised of amorphous silicon, grain and grain boundary.The band gap of selected crystalline silicon is 1.12eV, and amorphous silicon is 1.75eV; Nano thin film crystallization rate (ratio of crystalline phase and the amorphous phase) scope of device quality level (material that can be used in generating belongs to the device quality level) is 40%-70%; Change in aforementioned range by the controlling crystallizing rate, the band gap that makes the graded bandgap Nano thin film is 1.3eV ~ 1.5eV.Controlling crystallizing rate method comprises the core preparation parameter of regulating Nano thin film, as the height of silane concentration (SC), preparation power and the height of preparation air pressure etc.
Graded bandgap has various structures, the utility model proposes four kinds of schemes, and the first forms " C " type grading structure by the graded bandgap of a 1200nm as shown in fig. 1, and band gap is from the 1.7eV alternation to 1.3eV; The Nano thin film crystallization rate is up to 70%.Because the Nano thin film early growth period exists amorphous hatching layer and the linear phenomenon that promotes of crystallization rate, deposition 300nm left and right, crystallization rate can tend towards stability, and therefore the 1200nm of " C " type grading structure realizes that by 70% crystallization rate band gap is by the alternation of 1.7eV to 1.3eV.
The second forms " V " type grading structure by two graded bandgaps as shown in Figure 2; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 900nm, and band gap is from the 1.3eV alternation to 1.5eV, and the Nano thin film crystallization rate is 70%-40%.Specifically, because the Nano thin film early growth period exists amorphous hatching layer and the linear phenomenon that promotes of crystallization rate, deposition 300nm left and right, crystallization rate can tend towards stability, therefore gradual change one 300nm realizes band gap by the alternation of 1.7eV to 1.3eV by the preparation parameter of 70% crystallization rate, gradual change two 900nm adopt 70%-40% crystallization rate preparation parameter linear change to realize that band gap is by the alternation of 1.3eV-1.5eV.
The third forms " U " type grading structure by three graded bandgaps as shown in Figure 3; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 600nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap thickness is 300nm, and from the 1.3eV alternation to 1.5eV, the Nano thin film crystallization rate is 70%-40%.
The 4th kind as shown in Figure 4, forms " E " type grading structure by four graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 300nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap thickness is 300nm, and from the 1.3eV alternation to 1.43eV, the Nano thin film crystallization rate is 70%-51%; The 4th graded bandgap thickness is 300nm, and from the 1.43eV alternation to 1.5eV, the Nano thin film crystallization rate is 51%-40%.
Four kinds of structure graded bandgaps respectively have superiority to the lifting of battery efficiency, can choose by actual demand during the preparation battery, when changing for cell thickness, can adjust accordingly on the said structure basis.The graded bandgap thin-film solar cell of nano silicon that makes thus comprises glass substrate 1, nesa coating 2, silicon film solar batteries 3 and back electrode 4; Silicon film solar batteries 3 is for the unijunction silicon film solar batteries or tie the laminated-silicon thin film solar cell more; The I layer of every layer of battery of the I layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopts graded bandgap Nano thin film of the present utility model.The N layer of every layer of battery of the N layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopts N-type nc-SiOx:H film.
See Fig. 5, the graded bandgap thin-film solar cell of nano silicon comprises glass substrate 1, nesa coating 2, silicon film solar batteries 3 and back electrode 4, the silicon film solar batteries 3 binode laminated-silicon thin film solar cell that top battery 31 and end battery 32 consists of of serving as reasons; The N of top battery 31
1Layer 31-1 is nc-SiOx:H/nc-Si:H, I
1Layer 31-2 is a-Si:H, P
1Layer 31-3 is a-SiC:H; The N of end battery 32
2Layer 32-1 is a-Si:H, I
2Layer 32-2 is nc-Si:H, P
2Layer 32-3 is nc-Si:H; Back electrode 4 is the composite membrane of ZnO and Ag/Al.Wherein, a-Si:H is hydrogenation non crystal silicon film; Nc-Si:H is hydrogenated nano-crystalline silicon (microcrystal silicon) film; A-SiC:H is the hydrogenated amorphous silicon layer of carbon dope; Nc-SiOx:H is oxygen-doped hydrogenated nano-crystalline silicon (microcrystal silicon) layer; Nc-SiOx:H/nc-Si:H is the battery rete of two laminations, and one deck is oxygen-doped hydrogenated nano-crystalline silicon (microcrystal silicon) layer, and one deck is hydrogenated nano-crystalline silicon.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (5)
1. a graded bandgap thin-film solar cell of nano silicon, comprise glass substrate (1), nesa coating (2), silicon film solar batteries (3) and back electrode (4); It is characterized in that: described silicon film solar batteries (3) is for the unijunction silicon film solar batteries or tie the laminated-silicon thin film solar cell more; The I layer of every layer of battery of the I layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopts the graded bandgap Nano thin film.
2. a kind of graded bandgap thin-film solar cell of nano silicon according to claim 1, is characterized in that: the mixing phase material of described graded bandgap Nano thin film for being comprised of amorphous silicon, grain and grain boundary; The band gap of crystalline silicon is 1.12eV, and amorphous silicon is 1.75eV; The Nano thin film crystallization rate scope of described device quality level is 40%-70%; The band gap of described graded bandgap Nano thin film is 1.3eV ~ 1.5eV; Described graded bandgap Nano thin film forms " C " type grading structure by the graded bandgap of a 1200nm, and band gap is from the 1.7eV alternation to 1.3eV; The highest crystallization rate of Nano thin film is 70%; Perhaps form " V " type grading structure by two graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap is 900nm, and band gap is from the 1.3eV alternation to 1.5eV, and the Nano thin film crystallization rate is 70%-40%; Perhaps form " U " type grading structure by three graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 600nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap is 300nm, and from the 1.3eV alternation to 1.5eV, the Nano thin film crystallization rate is 70%-40%; Perhaps form " E " type grading structure by four graded bandgaps; The first graded bandgap thickness is 300nm, and band gap is from the 1.7eV alternation to 1.3eV, and Nano thin film early growth period film longitudinal growth amorphous hatching layer is to 70% crystallization rate; The second graded bandgap thickness is 300nm, and band gap is 1.3eV, and the Nano thin film crystallization rate is 70%; The 3rd graded bandgap thickness is 300nm, and from the 1.3eV alternation to 1.43eV, the Nano thin film crystallization rate is 70%-51%; The 4th graded bandgap thickness is 300nm, and from the 1.43eV alternation to 1.5eV, the Nano thin film crystallization rate is 51%-40%.
3. a kind of graded bandgap thin-film solar cell of nano silicon according to claim 1 and 2 is characterized in that: the N layers of every layer of battery of the N layer of unijunction silicon film solar batteries and many knot laminated-silicon thin film solar cells all adopt N-type nc-SiOx:H film.
4. a kind of graded bandgap thin-film solar cell of nano silicon according to claim 3 is characterized in that: described back electrode (4) is the composite membrane of ZnO and Ag/Al.
5. a kind of graded bandgap thin-film solar cell of nano silicon according to claim 4 is characterized in that: described silicon film solar batteries (3) the binode laminated-silicon thin film solar cell that top battery (31) and end battery (32) consist of of serving as reasons; The N of described top battery (31)
1Layer (31-1) is nc-SiOx:H/nc-Si:H, I
1Layer (31-2) is a-Si:H, P
1Layer (31-3) is a-SiC:H; The N of battery of the described end (32)
2Layer (32-1) is a-Si:H, I
2Layer (32-2) is nc-Si:H, P
2Layer (32-3) is nc-Si:H.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227229A (en) * | 2013-04-11 | 2013-07-31 | 于化丛 | Graded bandgap nano-silicon film and graded bandgap nano-silicon film solar cell |
| CN105470339A (en) * | 2014-08-08 | 2016-04-06 | 上海建冶环保科技股份有限公司 | Nanosilicon thin-film multi-junction solar cell |
| CN105720118A (en) * | 2016-02-06 | 2016-06-29 | 中国华能集团清洁能源技术研究院有限公司 | Silicon thin film solar cell |
| CN112086560A (en) * | 2020-08-24 | 2020-12-15 | 隆基绿能科技股份有限公司 | Laminated battery and preparation method thereof |
-
2013
- 2013-04-11 CN CN2013201793181U patent/CN203277465U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227229A (en) * | 2013-04-11 | 2013-07-31 | 于化丛 | Graded bandgap nano-silicon film and graded bandgap nano-silicon film solar cell |
| CN103227229B (en) * | 2013-04-11 | 2017-02-08 | 于化丛 | Graded bandgap nano-silicon film and graded bandgap nano-silicon film solar cell |
| CN105470339A (en) * | 2014-08-08 | 2016-04-06 | 上海建冶环保科技股份有限公司 | Nanosilicon thin-film multi-junction solar cell |
| CN105720118A (en) * | 2016-02-06 | 2016-06-29 | 中国华能集团清洁能源技术研究院有限公司 | Silicon thin film solar cell |
| CN112086560A (en) * | 2020-08-24 | 2020-12-15 | 隆基绿能科技股份有限公司 | Laminated battery and preparation method thereof |
| CN112086560B (en) * | 2020-08-24 | 2023-11-03 | 隆基绿能科技股份有限公司 | Laminated battery and preparation method thereof |
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Granted publication date: 20131106 Effective date of abandoning: 20170208 |
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