CN203260576U - Igbt module - Google Patents

Igbt module Download PDF

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Publication number
CN203260576U
CN203260576U CN 201320053564 CN201320053564U CN203260576U CN 203260576 U CN203260576 U CN 203260576U CN 201320053564 CN201320053564 CN 201320053564 CN 201320053564 U CN201320053564 U CN 201320053564U CN 203260576 U CN203260576 U CN 203260576U
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China
Prior art keywords
igbt module
separator
base
negative electrode
separators
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Expired - Lifetime
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CN 201320053564
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Chinese (zh)
Inventor
薛鹏辉
陈宝川
晏伟平
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BYD Semiconductor Co Ltd
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BYD Co Ltd
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Priority to CN 201320053564 priority Critical patent/CN203260576U/en
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Abstract

The utility model provides an IGBT module comprising a base, wherein the base comprises a surface and a side surface. A plurality of sets of corresponding positive electrodes and negative electrodes are arranged on the surface of the base. Every set of positive electrodes and negative electrodes is electrically insulated. A plurality of first isolation layers are fixedly mounted on the surface of the base and are respectively disposed between every set of positive electrodes and negative electrodes. The IGBT module also comprises a plurality of second isolation layers arranged on the side surface of the base, wherein the plurality of second isolation layers are respectively connected with the plurality of opposite first isolation layers. According to the IGBT module of the structure provided by the utility model, a creepage distance of the positive electrodes and the negative electrodes on the side surface of the base is increased, the IGBT module can effectively prevent short circuit because the positive electrodes and the negative electrodes are broken down on the surface and/or the side surface of the base, and service life of the IGBT module is prolonged.

Description

A kind of IGBT module
Technical field
The utility model relates to the power model field, relates in particular to a kind of IGBT module that prevents the breakdown short circuit of positive and negative electrode.
Background technology
IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a kind of compound power electronic device that the mid-80 comes out, on structure, be equivalent to one by MOSFET(Metal Oxide Semiconductor Field Effect Transistor, the BJT(Bipolar Junction Transistor of the thick base that the Metal-oxide-semicondutor field-effect transistor) drives, bipolar junction transistor), the quick response of the existing MOSFET of IGBT, high input impedance, Heat stability is good, the simple characteristic of drive circuit, the current density that also possesses BJT is high, on-state voltage drop is low, withstand voltage high characteristic is widely used in the power electronic equipment.
Along with developing rapidly of power electronic device, the driving voltage of IGBT module is also increasing, the driving voltage of high-power IGBT module even more than 1200V, although the IGBT module of large voltage can drive powerful alternating current machine work, also brought large electric current the positive and negative electrode of IGBT module might be punctured simultaneously and caused the problem of short circuit.The situation of the breakdown short circuit of positive and negative electrode seldom appears in the IGBT module under regular service conditions, but longly cause the plastic cement between the positive and negative electrode aging in IGBT module service time, owing to causing the electric insulation rate, the upper dust that falls descends between the IGBT module positive and negative electrode, perhaps turn-off suddenly and make and produce one between the positive and negative electrode than driving voltage in the situation of higher pulse voltage in the IGBT module, the positive and negative electrode of IGBT module might be breakdown and be caused the positive and negative electrode short circuit, thereby damage the IGBT module, reduce the IGBT module life.
For fear of the breakdown short circuit of the positive and negative electrode of IGBT module, the common practice is the creepage distance that increases between the positive and negative electrode of IGBT module, the positive electrode that namely increases the IGBT module between the negative electrode along the beeline of insulator surface, thereby play the effect of the breakdown short circuit of positive and negative electrode that prevents the IGBT module.Fig. 1 is a kind of IGBT modular structure figure of the prior art, with reference to figure 1, described IGBT module is by arranging plastic cement projection (being separator) 131 between the positive electrode 121 on base 11 surfaces and negative electrode 122, thereby increase positive electrode 121 to the creepage distance of negative electrode 122, can prevent that positive electrode 121 and negative electrode 122 are in base 11 surperficial breakdown short circuits.Although but can prevent positive electrode 121 and negative electrode 122 breakdown short circuits on the surface of described base 11 by separator 131 is set between the positive electrode 121 on base 11 surfaces and negative electrode 122, can not solve the problem of positive electrode 121 and negative electrode 122 breakdown short circuits on the side of base 11.
The utility model content
In order to solve the problems of the technologies described above, the utility model proposes a kind of novel IGBT module, described IGBT module all arranges separator by surface and the side at base, can effectively prevent surface and/or the breakdown short circuit of side positive and negative electrode at base, prolongs the life-span of IGBT module.
A kind of IGBT module, described IGBT module comprises base, described base comprises surface and side, described susceptor surface is provided with corresponding positive electrode and the negative electrode of many groups, described every group of positive electrode and negative electrode are electrically insulated from each other, described susceptor surface is fixedly installed a plurality of the first separators, described a plurality of the first separator lays respectively between described every group of positive electrode and the negative electrode, described IGBT module also comprises a plurality of the second separators that are positioned at described base side, and described a plurality of the second separators respectively a plurality of first separators relative with it are connected.
IGBT module of the present utility model all arranges separator by surface and the side at the IGBT module base, can effectively prevent on the surface of base and/or positive electrode and the breakdown short circuit of negative electrode of side IGBT module, prolongs the life-span of IGBT module.
Further, described a plurality of the second separator, a plurality of the first separator and base are integrally formed.
Further, the shape of described the first separator and the second separator is cylinder, cube or triangular prism.
Further, described the second separator one end is connected with described the first separator, and the other end extends to described base side bottom.
Further, described the first separator and the second separator are positioned at the centre of described positive electrode and negative electrode.
Further, the height of described the second separator is 2-4mm.
Further, the width of described the second separator is 2-3mm.
Further, described IGBT module comprises three groups of corresponding positive electrodes and negative electrode.
Further, described the second separator is PPS(Ployphenylene Sulfide, polyphenylene sulfide), PC(Polycarbonate, Merlon), ABS(Acrylonitrile Butadiene Styrene Plastic, the acrylonitrile-butadiene-styrene (ABS) plastics) or the mixture of PC and ABS.
IGBT module of the present utility model all arranges separator by surface and the side at the IGBT module base, can effectively prevent on the surface of base and/or positive electrode and the breakdown short circuit of negative electrode of side IGBT module, prolongs the life-span of IGBT module.
Description of drawings
Above-mentioned and/or the additional aspect of the utility model and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is IGBT modular structure figure of the prior art;
Fig. 2 is the IGBT modular structure figure of an embodiment of the utility model.
Embodiment
The below describes embodiment of the present utility model in detail, and the example of described embodiment is shown in the drawings.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the utility model, and can not be interpreted as restriction of the present utility model.
Fig. 2 is the IGBT modular structure figure of an embodiment of the utility model.With reference to figure 2, IGBT module of the present utility model is writing board shape, in the utility model, front when the IGBT module is normally placed is defined as the surface of IGBT module, to be defined as with the positive side surfaces adjacent and close many group positive and negative electrodes of described IGBT module the side of IGBT module, the distance definition of separator being given prominence to described susceptor surface and side is the height of separator, the length on the limit that separator is long is defined as the length of separator, the length on another limit is defined as the width of separator.Should be understood that, define surface, the side of the base of IGBT module herein, the length of separator, width, highly only is in order to explain this patent, is not in order to limit this patent.
With reference to figure 2, the utility model proposes a kind of IGBT module, described IGBT module comprises base 11, described base 11 is writing board shape, comprise surface and the side adjacent with described surface, the surface of described base 11 is provided with three groups of corresponding positive electrodes 121 and negative electrode 122, three-phase alternating current drives alternating current machine thereby described three groups of positive and negative electrodes are used for output, described every group of positive electrode 121 and negative electrode 122 are by insulator foot 11 isolation, the surface of described base 11 is fixedly installed three the first separators 131, described three the first separators 131 lay respectively between described every group of positive electrode 121 and the negative electrode 122, be that first separator 131 all is set between every group of described positive electrode 121 and the negative electrode 122, described IGBT module also comprises three the second separators 132 that are positioned at described base 11 sides, described three the second separators 132 respectively a plurality of first separators 131 relative with it are connected
Be that first separator 131 and second separator 132 that is connected with described the first separator 131 all are set between every group of described positive electrode 121 and the negative electrode 122.IGBT module of the present utility model is by arranging the first separator 131 between the positive electrode 121 on base 11 surfaces and negative electrode 122, and the second separator 132 that is connected with described the first separator 131 is set in base 11 sides, positive electrode 121 and negative electrode 122 have been increased at the creepage distance of base 11 sides, can effectively prevent the positive electrode 121 and surface and/or the side breakdown short circuit of negative electrode 122 at base 11 of described IGBT module, prolong the life-span of IGBT module.
In implementation, described three the second separators 132, three the first separators 131 are integrally formed with base 11.In the present embodiment, at first produce and hold the link into an integrated entity injection mold of shape of described base 11 and three the first separators 131, three the second separators 132, then inject the plastic cement of melting in the injection mold, after the plastic cement cooling of melting, namely form three integrally formed the first separators 131, three the second separators 132 and bases 11.The utility model is by integrally formed three the first separators 131, three the second separators 132 and bases 11, not only so that the first separator 131, the second separator 132 and base 11 in conjunction with firm, also can reduce production process simultaneously, reduce production costs.
In implementation, described the first separator 131 and the second separator 132 can be the shapes such as cylinder, cube, triangular prism.In the present embodiment, described the first separator 131 and the second separator 132 are preferably cube shaped.By being arranged to described the first separator 131 and the second separator 132 cube shaped, can increase the positive electrode 121 of IGBT module and negative electrode 122 at the creepage distance of base 11 surfaces and side, prevent positive electrode 121 and negative electrode 122 breakdown short circuits, prolong the life-span of IGBT module.
In implementation, described the second separator 132 1 ends are connected with described the first separator 131, and the other end extends to described base 11 side bottom.Be connected with the first separator 131 by the end with described the second separator 132, the other end extends to the side bottom of described base 11, so that the length of described the second separator 132 is longer, thereby the positive electrode 121 of increase IGBT module and negative electrode 122 prolong the life-span of IGBT module at the creepage distance of base 11 sides.
In implementation, described a plurality of the first separators 131 and a plurality of the second separators 132 are positioned at the centre of described positive electrode 121 and the negative electrode 122 corresponding with it.By a plurality of the first separators 131 and a plurality of the second separators 132 being arranged on the centre of described positive electrode 121 and the negative electrode 122 corresponding with it; thereby so that described positive electrode 121 equates with the distance of negative electrode 122 to described the first separator 131 and the second separator 132; thereby prevent the breakdown short circuit of a certain end of positive electrode 121 or negative electrode 122, protection IGBT module.
In implementation, the height of described the second separator 132 is 2-4mm, and the width of described the second separator 132 is 2-3mm.In the present embodiment, the height of described the second separator 132 is preferably 4mm, and the width of described the second separator 132 is preferably 2mm.
In implementation, described IGBT module comprises three groups of corresponding positive electrodes 121 and negative electrode 122.Thereby IGBT module of the present utility model drives alternating current machine work by three groups of corresponding positive electrodes 121 and negative electrode 122 output three-phase alternating currents.
In implementation, described the second separator 132, the first separator 131 and base 11 are mixtures of PPS, PC, ABS or PC and ABS.Because PPS has the advantage of mechanical strength height, high temperature resistant, chemical proofing, difficult combustion, Heat stability is good, in the present embodiment, described the second separator 132, the first separator 131 and base 11 are preferably PPS.
IGBT module of the present utility model is by arranging the first separator 131 between the positive electrode 121 on base 11 surfaces and negative electrode 122, and the second separator 132 that is connected with described the first separator 131 is set in base 11 sides, positive electrode 121 and negative electrode 122 have been increased at the creepage distance of base 11 sides, can effectively prevent the positive electrode 121 and surface and/or the side breakdown short circuit of negative electrode 122 at base 11 of described IGBT module, prolong the life-span of IGBT module.
Although illustrated and described embodiment of the present utility model, for the ordinary skill in the art, be appreciated that in the situation that does not break away from principle of the present utility model and spirit and can carry out multiple variation, modification, replacement and modification to these embodiment that scope of the present utility model is by claims and be equal to and limit.

Claims (8)

1. IGBT module, described IGBT module comprises base, described base comprises surface and side, described susceptor surface is provided with corresponding positive electrode and the negative electrode of many groups, every group of described positive electrode and negative electrode are electrically insulated from each other, described susceptor surface is fixedly installed a plurality of the first separators, described a plurality of the first separator lays respectively between every group of described positive electrode and the negative electrode, it is characterized in that, also comprise a plurality of the second separators that are positioned at described base side, described a plurality of the second separators respectively a plurality of first separators relative with it are connected.
2. IGBT module as claimed in claim 1 is characterized in that, described a plurality of the second separators, a plurality of the first separator and base are integrally formed.
3. IGBT module as claimed in claim 2 is characterized in that, the shape of described the first separator and the second separator is cylinder, cube or triangular prism.
4. IGBT module as claimed in claim 3 is characterized in that, described the second separator one end is connected with described the first separator, and the other end extends to described base side bottom.
5. IGBT module as claimed in claim 4 is characterized in that, described the first separator and the second separator are positioned at the centre of described positive electrode and negative electrode.
6. IGBT module as claimed in claim 5 is characterized in that, the height of described the second separator is 2-4mm.
7. such as claim 5 or 6 described IGBT modules, it is characterized in that the width of described the second separator is 2-3mm.
8. IGBT module as claimed in claim 1 is characterized in that, described IGBT module comprises three groups of corresponding positive electrodes and negative electrode.
CN 201320053564 2013-01-31 2013-01-31 Igbt module Expired - Lifetime CN203260576U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320053564 CN203260576U (en) 2013-01-31 2013-01-31 Igbt module

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Application Number Priority Date Filing Date Title
CN 201320053564 CN203260576U (en) 2013-01-31 2013-01-31 Igbt module

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103826388A (en) * 2014-02-22 2014-05-28 鹤山丽得电子实业有限公司 Novel folding flexible circuit board and flexible LED bar lamp with two light-emitting faces and novel folding flexible circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103826388A (en) * 2014-02-22 2014-05-28 鹤山丽得电子实业有限公司 Novel folding flexible circuit board and flexible LED bar lamp with two light-emitting faces and novel folding flexible circuit board

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C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20191203

Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong

Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd.

Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009

Patentee before: BYD Co.,Ltd.

TR01 Transfer of patent right
CP01 Change in the name or title of a patent holder

Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee after: BYD Semiconductor Co.,Ltd.

Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee before: BYD Semiconductor Co.,Ltd.

CP01 Change in the name or title of a patent holder
CP03 Change of name, title or address

Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee after: BYD Semiconductor Co.,Ltd.

Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd.

CP03 Change of name, title or address
CX01 Expiry of patent term

Granted publication date: 20131030

CX01 Expiry of patent term