CN203377770U - Isolation device and semiconductor module device - Google Patents
Isolation device and semiconductor module device Download PDFInfo
- Publication number
- CN203377770U CN203377770U CN201320372310.7U CN201320372310U CN203377770U CN 203377770 U CN203377770 U CN 203377770U CN 201320372310 U CN201320372310 U CN 201320372310U CN 203377770 U CN203377770 U CN 203377770U
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- spacer assembly
- semiconductor module
- terminal
- module
- side wall
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Abstract
The utility model provides an isolation device and a semiconductor module device. The isolation device is applied to a semiconductor module group. The semiconductor module group comprises a number of semiconductor modules which are placed side by side. The positive pole terminals of all semiconductor modules are electrically connected through a first metal plate. The negative pole terminals of all semiconductor modules are electrically connected through a second metal plate. The isolation device is made of an insulation material. The insulation device comprises a bottom plate and a first side wall which is arranged on the bottom plate. The bottom plate is used for being clamped between the semiconductor modules and the first metal plate and/or being clamped between the semiconductor modules and the second metal plate, and enables the first side wall to isolate the positive pole terminals and the negative pole terminals. The semiconductor module device comprises a semiconductor module group and the isolation device. The isolation device provided by the utility model has the advantage of convenient installation, so that the assembly efficiency of the semiconductor module group is improved, and installation and manufacture costs of the isolation device are low.
Description
Technical field
The utility model relates to a kind of spacer assembly and semiconductor module apparatus.
Background technology
In converter technique and microelectric technique, frequency converter is to utilize the on-off action of power semiconductor device power frequency supply to be transformed to the electric energy control device of another frequency.Along with improving constantly of industrial automatization, the user is also more and more higher to the requirement of frequency converter.
The frequency converter of the rectifier bridge group that comprises that rectifier diode forms of take is example, and each rectifier bridge top comprises three electrode terminals, is followed successively by three-phase input end, direct-flow positive pole lead-out terminal and direct current cathode output end.The input power of three-phase input end sub-connection frequency converter, positive terminal and negative terminal are respectively by the copper bar parallel connection.For the copper bar collision of the connection that prevents positive pole, negative pole and input terminal place, or just do not causing the problems such as electric clearance and creepage distance diminish owing to installing, usually can between input and positive pole, increase the spacer assembly of insulation between positive pole and negative pole.
As publication number be CN202435286U " a kind of diaphragm structure for high voltage transducer power unit rectifier bridge group ", this mode is using diaphragm structure as spacer assembly, thereby diaphragm structure is fixed between two terminals on rectifier bridge and plays buffer action with binding agent, but use binding agent can increase installation procedure, affect the spacer assembly efficiency of assembling.And use binding agent operate miss easily to occur, and likely binding agent can be attached to accidentally to the installation surface of terminal, can affect the electrical equipment contact.Diaphragm structure insulating barrier used need to be manufactured by machine work, and cost is relatively high.
The utility model content
The technical problems to be solved in the utility model is to install inconveniently in order to overcome in prior art isolation structure, and the defect that cost is higher, provide a kind of cost of installing and manufacturing lower and be convenient to spacer assembly and the semiconductor module apparatus of assembling.
The utility model is to solve above-mentioned technical problem by following technical proposals: a kind of spacer assembly, for the semiconductor module group, described semiconductor module group comprises some semiconductor modules placed side by side, the positive terminal of all semiconductor modules is electrically connected to by the first metallic plate, the negative terminal of all semiconductor modules is electrically connected to by the second metallic plate, the material of described spacer assembly is insulating material, described spacer assembly comprises a base plate and is located at the first side wall on described base plate, described base plate is for being held between described semiconductor module and described the first metallic plate and/or being held between described semiconductor module and described the second metallic plate, and make described the first side wall by positive terminal and negative terminal isolation.
Described spacer assembly is for the semiconductor module group, semiconductor module refers to power semiconductor module, and power semiconductor module comprises diode (led) module, MOSFET module (metal-oxide half field effect transistor module), GTR module (huge transistor modular) or IGBT module (IGBT module) etc.As rectifier bridge group commonly used in frequency converter is comprised of diode (led) module, the rectifier bridge group is a kind of of semiconductor module group.
Semiconductor module according to different structure and quantity, described spacer assembly can have various structures, as in comprising the semiconductor module group of three semiconductor modules, described spacer assembly comprises three holes, after three Kong Yousan negative terminals pass, described base plate is clamped between described semiconductor module and described the second metallic plate, described sidewall isolation positive terminal and negative terminal.Described spacer assembly can also be: in comprising the semiconductor module group of three semiconductor modules, described spacer assembly comprises three holes, after three Kong Yousan positive terminals pass, described base plate is clamped between described semiconductor module and described the first metallic plate, described sidewall isolation positive terminal and negative terminal.Described spacer assembly can be again: in comprising the semiconductor module group of three semiconductor modules, described spacer assembly comprises six holes, wherein three Kong Yousan positive terminals pass, three Kong Yousan negative terminals pass, described base plate is pushed down by two metallic plates, described sidewall isolation positive terminal and negative terminal.
Preferably, described the first side wall is vertical with described base plate.Described the first side wall can with described base plate out of plumb, but described the first side wall not only isolation effect vertical with described base plate be good, and the processing of spacer assembly and installation convenience very all.
Preferably, described the first metallic plate and the second metallic plate are copper bar.
Preferably, described spacer assembly comprises the second sidewall of being located on described base plate; Described the second sidewall is used for the input terminal of semiconductor module or lead-out terminal and negative terminal isolation, or described the second sidewall is used for input terminal or lead-out terminal and positive terminal isolation.Described base plate is provided with two sidewalls, simultaneously by positive terminal and negative terminal, input or output the isolation of terminal and negative terminal.Described spacer assembly can also be isolated positive terminal and negative terminal, will input or output simultaneously terminal and positive terminal isolation.Described base plate is provided with two sidewalls can make described spacer assembly play better isolation effect, prevents better the metallic plate collision.
Preferably, described base plate, described the first side wall and described the second sidewall are structure as a whole, and the material of described spacer assembly is insulating paper or dielectric film.Described spacer assembly is the integrative-structure by insulating paper or dielectric film cross cutting system.Insulating paper is simple installation but also with low cost not only, has avoided the defect of utilizing binding agent to install in the prior art simultaneously.The cross cutting operation is compared the machining operation, not only quick but also production cost is lower.
Preferably, the span of the thickness of described insulating paper or dielectric film is 0.15 millimeter to 0.55 millimeter.The value of thickness is the moulding of being convenient to insulating paper or dielectric film.And the span of thickness is 0.15 millimeter to 0.55 millimeter and can makes isolation structure play good isolation effect.
Preferably, the value of described thickness is 0.25 millimeter.Insulating paper or dielectric film that value is 0.25 millimeter are more prone to machine-shaping, and consider from this two aspect of cost of isolation effect and spacer assembly, and it is a kind of very good value that described thickness is 0.25 millimeter.
Preferably, described spacer assembly comprises the outer wall of being located on described the first side wall, and described outer wall is for isolating positive terminal and described the second metallic plate.When positive terminal and described the second metallic plate close together, described spacer assembly adopts the structure that comprises outer wall, can be by positive terminal and described the second metallic plate isolation.
Preferably, described semiconductor module is diode (led) module, MOSFET module, GTR module or IGBT module.Described spacer assembly can be applied on dissimilar semiconductor module.
The utility model also provides a kind of semiconductor module apparatus, and described semiconductor module apparatus comprises semiconductor module group and spacer assembly as above.The semiconductor module apparatus that comprises described spacer assembly, can be because metallic plate collision and the generation accident, and the isolation between the terminal of opposed polarity is good.
Positive progressive effect of the present utility model is: spacer assembly of the present utility model is easy for installation, thereby make the semiconductor module assembling join efficiency, improves, and the cost that simultaneously described spacer assembly is installed and manufactured is lower.
The accompanying drawing explanation
Fig. 1 is the utility model spacer assembly embodiment 1 and structural representation semiconductor module assembling timing.
The structural representation of having joined with semiconductor module assembling that Fig. 2 is the utility model spacer assembly embodiment 1.
The structural representation that Fig. 3 is the utility model spacer assembly embodiment 1.
The structural representation that Fig. 4 is the utility model spacer assembly embodiment 2.
The structural representation that Fig. 5 is the utility model spacer assembly embodiment 3.
The structural representation that Fig. 6 is the utility model spacer assembly embodiment 6.
The structural representation that Fig. 7 is the utility model spacer assembly embodiment 7.
The structural representation that Fig. 8 is the utility model spacer assembly embodiment 8.
Embodiment
Below lift a preferred embodiment, and carry out by reference to the accompanying drawings the clearer the utility model that intactly illustrates.
Embodiment 1
In the present embodiment, referring to Fig. 1, Fig. 2 and Fig. 3, described spacer assembly is for the semiconductor module group, described semiconductor module group comprises three semiconductor modules placed side by side, described semiconductor module can be diode (led) module, MOSFET module, GTR module or IGBT module, the semiconductor module of the present embodiment is diode (led) module, and the terminal on described diode (led) module is followed successively by input terminal 16, negative terminal 17 and positive terminal 18.The positive terminal 18 of all diode (led) modules is electrically connected to by the first copper bar 15, and the negative terminal 17 of all diode (led) modules is electrically connected to by the second copper bar 14, and described diode (led) module is by the copper bar parallel connection, and described copper bar is a kind of optimal way of metallic plate.The material of described spacer assembly is insulating paper, and insulating paper is a kind of good insulating material.The material of described spacer assembly can also be dielectric film.
Described spacer assembly comprises a base plate 11 and is vertical at a first side wall 13 and one second sidewall 12 on described base plate 11, described the first side wall 13 and the second sidewall 12 can be not orthogonal to described base plate 11, but described the first side wall 13 and the second sidewall 12 are perpendicular to described base plate 11, not only isolation effect is good, and the processing of spacer assembly and convenience very is installed all.
Described base plate 11 is provided with three holes 19 passing for described terminal, after described terminal passes described base plate 11, described base plate 11 is for being held between described diode (led) module and described the second copper bar 14, after described the second copper bar 14 is fixed on described diode (led) module, described spacer assembly is clamped being fixed on described diode (led) module also, and compared with prior art, described spacer assembly does not need to use binding agent to be fixed, efficiency of assembling is high, and can not produce bad electrical contact.The position that described the first side wall 13 is located on described base plate 11 makes described the first side wall 13 by positive terminal 18 and negative terminal 17 isolation, and makes described the second sidewall 12 by input terminal 16 and negative terminal 17 isolation.
Wherein, described base plate 11, described the first side wall 13 and the integrative-structure of described the second sidewall 12 for being made by described insulating paper, the value of the thickness of described insulating paper is 0.15 millimeter.
The present embodiment also provides a kind of semiconductor module apparatus, and described semiconductor module apparatus comprises a diode (led) module group and spacer assembly as above.Described diode (led) module group comprises three diode (led) modules.The semiconductor module apparatus that comprises described spacer assembly, can not collided and the generation accident by copper bar, and the isolation between the terminal of opposed polarity is good.
Embodiment 2
Referring to Fig. 4, the difference of the present embodiment and embodiment 1 only is: described spacer assembly comprises a base plate 11 and is vertical at the first side wall 13 on described base plate 11, and described spacer assembly only has a sidewall 13 without the second sidewalls.Wherein, described base plate 11 and the integrative-structure of described the first side wall 13 for being made by described insulating paper, the value of the thickness of described insulating paper is 0.55 millimeter.
Embodiment 3
Referring to Fig. 5, the difference of the present embodiment and embodiment 2 only is: described spacer assembly is two, and three Kong Yousan negative terminals of a spacer assembly pass and the described the first side wall 13 of this spacer assembly is isolated described positive terminal and described negative terminals.Three holes of another spacer assembly also by three negative terminals through and described another the described the first side wall 13 described input terminal of isolation and the described negative terminals of spacer assembly.Wherein, described base plate 11 and the integrative-structure of described the first side wall 13 for being made by described insulating paper, the value of the thickness of described insulating paper is 0.25 millimeter.
Embodiment 4
The difference of the present embodiment and embodiment 3 only is: the material of described spacer assembly is dielectric film, described spacer assembly is two, and three Kong Yousan negative terminals of a spacer assembly pass and the described the first side wall of this spacer assembly is isolated described positive terminal and described negative terminal.Three Kong Yousan input terminals of another spacer assembly through and described another the described the first side wall of spacer assembly isolate described input terminal and described negative terminal.
Embodiment 5
The difference of the present embodiment and embodiment 4 only is: described spacer assembly is two, and three Kong Yousan positive terminals of a spacer assembly pass and the described the first side wall of this spacer assembly is isolated described positive terminal and described negative terminal.Three Kong Yousan negative terminals of another spacer assembly through and described another the described the first side wall of spacer assembly isolate described input terminal and described negative terminal.
Embodiment 6
Referring to Fig. 6, the difference of the present embodiment and embodiment 5 only is: described spacer assembly is 1, described spacer assembly is provided with 6 holes, described 6 Kong Yousan positive terminals and three negative terminals through and the described the first side wall 13 described positive terminal of isolation and the described negative terminals of this spacer assembly.
Embodiment 7
Referring to Fig. 7, the difference of the present embodiment and embodiment 6 only is: described spacer assembly comprises one second sidewall 12, described spacer assembly is provided with 6 holes, described 6 Kong Yousan positive terminals and three negative terminals through and the described the first side wall 13 described positive terminal of isolation and the described negative terminals of this spacer assembly.Described the second sidewall 12 described input terminal of isolation and described negative terminals.
Embodiment 8
Referring to Fig. 8, the difference of the present embodiment and embodiment 2 only is: semiconductor module is the IGBT module, the lead-out terminal that in embodiment 2, the input terminal of diode (led) module is the IGBT module, the negative terminal that the negative terminal of diode (led) module is the IGBT module, the positive terminal that the positive terminal of diode (led) module is the IGBT module, described spacer assembly comprises the outer wall 20 of being located on described the first side wall 13, and described outer wall 20 is for isolating positive terminal and described the second copper bar.
Although more than described embodiment of the present utility model, it will be understood by those of skill in the art that these only illustrate, protection range of the present utility model is limited by appended claims.Those skilled in the art, under the prerequisite that does not deviate from principle of the present utility model and essence, can make various changes or modifications to these execution modes, but these changes and modification all fall into protection range of the present utility model.
Claims (10)
1. a spacer assembly, for the semiconductor module group, described semiconductor module group comprises some semiconductor modules placed side by side, the positive terminal of all semiconductor modules is electrically connected to by the first metallic plate, the negative terminal of all semiconductor modules is electrically connected to by the second metallic plate, the material of described spacer assembly is insulating material, it is characterized in that, described spacer assembly comprises a base plate and is located at the first side wall on described base plate, described base plate is for being held between described semiconductor module and described the first metallic plate and/or being held between described semiconductor module and described the second metallic plate, and make described the first side wall by positive terminal and negative terminal isolation.
2. spacer assembly as claimed in claim 1, is characterized in that, described the first side wall is vertical with described base plate.
3. spacer assembly as claimed in claim 2, is characterized in that, described the first metallic plate and the second metallic plate are copper bar.
4. spacer assembly as described as any one in claims 1 to 3, is characterized in that, described spacer assembly comprises the second sidewall of being located on described base plate; Described the second sidewall is used for the input terminal of semiconductor module or lead-out terminal and negative terminal isolation, or described the second sidewall is used for input terminal or lead-out terminal and positive terminal isolation.
5. spacer assembly as claimed in claim 4, is characterized in that, described base plate, described the first side wall and described the second sidewall are structure as a whole, and the material of described spacer assembly is insulating paper or dielectric film.
6. spacer assembly as claimed in claim 5, is characterized in that, the span of the thickness of described insulating paper or dielectric film is 0.15 millimeter to 0.55 millimeter.
7. spacer assembly as claimed in claim 6, is characterized in that, the value of described thickness is 0.25 millimeter.
8. spacer assembly as claimed in claim 7, is characterized in that, described spacer assembly comprises the outer wall of being located on described the first side wall, and described outer wall is for isolating positive terminal and described the second metallic plate.
9. spacer assembly as claimed in claim 8, is characterized in that, described semiconductor module is diode (led) module, MOSFET module, GTR module or IGBT module.
10. a semiconductor module apparatus, is characterized in that, described semiconductor module apparatus comprises semiconductor module group and spacer assembly as in one of claimed in any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320372310.7U CN203377770U (en) | 2013-06-26 | 2013-06-26 | Isolation device and semiconductor module device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320372310.7U CN203377770U (en) | 2013-06-26 | 2013-06-26 | Isolation device and semiconductor module device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203377770U true CN203377770U (en) | 2014-01-01 |
Family
ID=49840273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320372310.7U Expired - Fee Related CN203377770U (en) | 2013-06-26 | 2013-06-26 | Isolation device and semiconductor module device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203377770U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957860A (en) * | 2016-05-03 | 2016-09-21 | 扬州国扬电子有限公司 | Power module provided with insulated septum |
-
2013
- 2013-06-26 CN CN201320372310.7U patent/CN203377770U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957860A (en) * | 2016-05-03 | 2016-09-21 | 扬州国扬电子有限公司 | Power module provided with insulated septum |
| CN105957860B (en) * | 2016-05-03 | 2018-07-20 | 扬州国扬电子有限公司 | A kind of power module equipped with insulating barrier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140101 Termination date: 20180626 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |