CN203224435U - Terahertz time-space resolved imaging system - Google Patents
Terahertz time-space resolved imaging system Download PDFInfo
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- CN203224435U CN203224435U CN 201320019407 CN201320019407U CN203224435U CN 203224435 U CN203224435 U CN 203224435U CN 201320019407 CN201320019407 CN 201320019407 CN 201320019407 U CN201320019407 U CN 201320019407U CN 203224435 U CN203224435 U CN 203224435U
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Abstract
The utility model relates to a Terahertz time-space resolved imaging system. The Terahertz time-space resolved imaging system comprises the following components: a sample placing rack; detecting crystal; a pump light generating device; a Terahertz light generating device; a detecting light generating device; and imaging equipment which is provided in an optical path of the detecting light after the detecting crystal. According to the Terahertz time-space resolved imaging system, Terahertz focal plane imaging technique is introduced into a Terahertz time resolved spectral measuring system. The Terahertz time-space resolved imaging system has the following advantages: effectively shortening experiment time, more accurately reflecting two-dimensional distribution of Terahertz electric field for finally obtaining four-dimensional spectral information of the tested sample, realizing comprehensive accurate detection for the time-space evolution process of the tested sample, and representing phase-change full-view of the tested sample in high accuracy.
Description
Technical field
The utility model relates to optical field, relates in particular to a kind of Terahertz time-space resolution imaging system.
Background technology
Along with semiconductor fabrication process and Development of Materials, the arithmetic speed of electronic chip is higher, area is littler, cost is lower.Because it is that transport property by its charge carrier determines that semiconductor externally encourages following phase transition process, so be the basis of semiconductor device development to the research of carrier transport phenomenon.Terahertz (Terahertz is called for short THz) pulse work has represented its important use potentiality as the far infrared measurement means of a uniqueness in present scientific research and industrial detection.Especially in to the semiconductor carriers The Characteristic Study, because terahertz pulse has characteristics such as photon energy is low, pulse width, neither can and transport the concentration of charge carrier and make a big impact and can realize instantaneous measurement, so Terahertz time resolved spectroscopy technology has become indispensable research method in the semiconductor device development.Fig. 1 is the optical system diagram of the Terahertz time resolved spectroscopy technology that the current-carrying sub-feature adopts on the research semiconductor in the prior art, as shown in Figure 1, utilize 800nm near infrared light I pumping semiconductor samples 101, excite its photic characteristic, interacted by terahertz pulse II and semiconductor samples 101 again, carry the sample transient state information, at last by terahertz light II and detection light III process crystal detection 102, measure terahertz pulse by the electro optic sampling method, observe semi-conductive transient changing.The Terahertz measuring technique is coherent measurement, can obtain amplitude and the phase information of spectrum simultaneously, and then realizes the Accurate Analysis to semiconductor transient optical state constant.
Because there is concentration gradient in the charge carrier that produces at semiconductor, can form horizontal and vertical diffusion.On the one hand, in diffusion process, charge carrier mutually collision is directly compound, perhaps with semiconductor in the impurity that contains take place to interact form compound indirectly.On the other hand, if having extra electric field or built in field, drift motion can appear in charge carrier, and can produce scattering with semiconductor ionized impurity and lattice vibration.These processes all can cause semi-conductive whole optical property to present unevenness.Yet, although traditional Terahertz time resolved spectroscopy technology has many advantages, but because the restriction of its metering system, the Terahertz hot spot need be focused on the sample and a bit survey, so it has only reflected the time domain variation characteristic of charge carrier, can not present charge carrier because the spatial characteristics that diffusion phenomena and drift phenomenon cause.
Summary of the invention
The purpose of this utility model is to overcome the limitation of utilizing the semi-conductive photic charge carrier evolution process of traditional Terahertz time resolved spectroscopy technical research, to realize the research to its spatial characteristics.
For achieving the above object, the utility model provides a kind of Terahertz time-space resolution imaging system.Comprise:
The sample rack;
Crystal detection;
The pump light generating apparatus;
The terahertz light generating apparatus;
Survey the photogenerated device; With
Imaging device is arranged in described detection light through the light path after the described crystal detection.
Preferably, described imaging device is charge coupled cell (CCD camera).
Preferably, described specimen is Si semiconductor or GaAs semiconductor.
Preferably, described crystal detection is close to described sample rack.
Preferably, described crystal detection is the electro-optic crystal with electrooptical effect.
Preferably, described electro-optic crystal is ZnTe crystal or GaP crystal.
Preferably, described terahertz light generating apparatus comprises that Terahertz produces the photogenerated device and Terahertz produces crystal.
Preferably, described Terahertz generation crystal is ZnTe crystal, LiNbO
3Crystal or GaAs crystal.
Preferably, described pump light generating apparatus, described detection photogenerated device and described Terahertz generation photogenerated device are same femtosecond pulse laser.
Preferably, wavelength is 800nm centered by the laser beam that described femtosecond pulse laser generates, and the duration of pulse is 50fs, and repetition frequency is the horizontal linear polarization light (V) of 1kHz.
Preferably, described Terahertz time-space resolution imaging system also comprises:
Polarization beam splitter prism is arranged in the light path of described horizontal linear polarization light;
λ/2 wave plates is positioned at the plane of incidence one side of described polarization beam splitter prism;
Polarization beam splitter prism is arranged in the light path of described horizontal linear polarization light;
λ/2 wave plates is positioned at the plane of incidence one side of described polarization beam splitter prism.
Preferably, described time-space resolution imaging system also comprises mechanical chopper, is electrically connected with described imaging device.
Preferably, described mechanical chopper is arranged in described pump light and shines light path before the described specimen, or is arranged in described Terahertz and produces illumination and penetrate described Terahertz and produce light path before the crystal.
Preferably, described time-space resolution imaging system also comprises:
First concavees lens are positioned at the plane of incidence one side that described Terahertz produces crystal; With
Throwing face mirror is positioned at exit facet one side that described Terahertz produces crystal.
Preferably, described time-space resolution imaging system also comprises:
λ/2 wave plates is arranged in described detection illumination and penetrates described crystal detection light path before; With
Polaroid is positioned at exit facet one side of described λ/2 wave plates.
Preferably, described time-space resolution imaging system also comprises:
The 3rd convex lens are arranged in described detection illumination and penetrate described crystal detection light path before; With
Second concavees lens are positioned at the focus place of described the 3rd convex lens plane of incidence one side.
Preferably, described time-space resolution imaging system also comprises nano indium tin metal oxide (ITO) electro-conductive glass, is positioned at the described sample rack plane of incidence one side.
Preferably, described time-space resolution imaging system also comprises half-reflecting half mirror, is positioned at the intersection of described detection light and crystal detection axis.
Preferably, described time-space resolution imaging system also comprises:
Polarization beam splitter prism is arranged in the described half-reflecting half mirror of described detection light transmission light path afterwards;
λ/4 wave plates is positioned at the plane of incidence one side of described polarization beam splitter prism;
The 4th convex lens are positioned at the plane of incidence one side of described polarization beam splitter prism; With
The 5th convex lens are positioned at exit facet one side of described polarization beam splitter prism.
Preferably, described time-space resolution imaging system also comprises first motorized precision translation stage, is arranged in the light path of described pump light.
Preferably, described time-space resolution imaging system also comprises second motorized precision translation stage, is arranged in the light path of described terahertz light or described detection light.
Terahertz time-space resolution imaging system of the present utility model is introduced Terahertz focal plane imaging technology in the Terahertz time resolved spectroscopy measuring system, be about to Terahertz time resolved spectroscopy technology and Digital Holography and organically combine, realize the time-space resolution imaging measurement to the photic characteristic of specimen (distributing as the photic charge carrier of semiconductor).By changing the time delay between terahertz light and the pump light and extracting the tera-hertz spectra constant, reflect that the time domain of the photic characteristic of specimen changes; Adopt the diverse location of Terahertz hot spot irradiation specimen, can observe the space distribution rule of the photic characteristic of specimen; By the electro optic sampling method Terahertz two-dimensional signal is loaded on the detection polarization state of light, and utilizes imaging device to extract by the method for difference detecting.This imaging system can shorten experimental period effectively, and the Two dimensional Distribution that can reflect the Terahertz electric field more realistically, finally obtain the four-dimensional spectral information of specimen, realization presents specimen accurately and excites the overall picture of phase transformation down at ultrafast laser the accurately observation comprehensively of specimen space-time evolution process.
Description of drawings
Fig. 1 is the optical schematic diagram of the Terahertz time resolved spectroscopy technology that the current-carrying sub-feature adopts on the research semiconductor in the prior art;
Fig. 2 is Terahertz time-space resolution imaging system synoptic diagram of the present utility model.
Embodiment
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Imaging system of the present utility model is by introducing Terahertz focal plane imaging technology in the Terahertz time resolved spectroscopy measuring system, specimen is carried out the time-space resolution imaging measurement, realize the time-space resolution imaging measurement to the photic characteristic of specimen (distributing as the photic charge carrier of semiconductor).
Fig. 2 is the Terahertz time-space resolution imaging system synoptic diagram of the embodiment of the invention.As shown in the figure, this imaging system comprises: sample rack 201, crystal detection 202, imaging device 203, pump light generating apparatus 218, terahertz light generating apparatus, detection photogenerated device 219.Wherein, sample rack 201 is used for placing specimen, and specimen can be the Si semiconductor, GaAs semiconductor etc.Crystal detection 202 is the electro-optic crystals with electrooptical effect, can adopt ZnTe crystal, GaP crystal etc.Crystal detection is positioned at exit facet one side of sample rack, and preferably, crystal detection is close to the placement of sample rack in the embodiment of the invention, to improve imaging resolution.Pump light generating apparatus 218 is used for generating pump light I, and pump light I is used for the irradiation specimen, excites its photic characteristic.Pump light can adopt near infrared femtosecond pulse or pulsewidth in terahertz light pulse of subpicosecond magnitude etc.In the embodiment of the invention, when being semiconductor as specimen, when adopting the near infrared femtosecond pulse as pump light irradiation specimen, can producing photic charge carrier and distribute, the single photon energy of this femtosecond pulse should be greater than the band-gap energy of specimen, to guarantee exciting of photic charge carrier.The terahertz light generating apparatus be used for to generate terahertz light II, and terahertz light ∏ is used at first shining specimen, shines crystal detection after obtaining specimen information, and the index ellipsoid by electrooptical effect modulation crystal detection.The information of specimen refers to such as the photic charge carrier of semiconductor samples or the distribution of conductivity etc. herein.The frequency range of terahertz light is 0.2-2.5THz, can be by ZnTe crystal, LiNbO
3Crystal or GaAs crystal etc. produce by the nonlinear optical switching process, also can be produced by the photoconduction antenna.The spot size of pump light I is less than the spot size of terahertz light, to guarantee that the observation of photic carrier moving is had enough visual fields.Survey photogenerated device 219 and be used for generating detection light III, survey light III and be used for the irradiation crystal detection to survey terahertz light, obtain the information of described specimen indirectly, can adopt the near infrared light pulse.Imaging device 203 is arranged in surveys light (III) through crystal detection (202) light path afterwards, can adopt CCD camera (charge coupled cell), be used for receiving described detection light, gather the Terahertz image of described specimen, namely terahertz light is through the Electric Field Distribution image after the specimen.Two images gathering are subtracted each other, and optical image is converted into digital signal.Pump spot is less than the Terahertz hot spot, to guarantee that the observation of the photic characteristic of specimen is had enough visual fields.
The terahertz light generating apparatus comprises that Terahertz produces photogenerated device 220 and Terahertz produces crystal 2 04, Terahertz produces the photogenerated device and is used for generating Terahertz generation light IV, and Terahertz generation light IV is used for the irradiation Terahertz and produces crystal 2 04 with the generation terahertz light.Terahertz produces light can adopt the near infrared light pulse, and Terahertz produces crystal can adopt ZnTe crystal, LiNbO
3Crystal or GaAs crystal etc.
This imaging system also comprises mechanical chopper 205, is electrically connected with imaging device, in order to control imaging device image is gathered synchronously.Mechanical chopper can be arranged in Terahertz generation illumination and penetrate the repetition frequency that Terahertz generation crystal light path is before exported with modulation Terahertz generation light, also can be arranged in pump light and shine specimen light path before with the repetition frequency of modulated pumping light output.
This imaging system also comprises the first concavees lens L1 and the face of throwing mirror PM1, is used for terahertz light is expanded.The first concavees lens L1 is positioned at the plane of incidence one side that Terahertz produces crystal; Throwing face mirror PM1 is positioned at exit facet one side that Terahertz produces crystal.
This imaging system also comprises λ/2 wave plates 206 and polaroid 207, λ/2 wave plates 206 are arranged in detection illumination and penetrate crystal detection light path before, be used for control and survey the polarisation of light direction, polaroid 207 is positioned at exit facet one side of λ/2 wave plates 206, is used for protecting partially through the detection light after λ/2 wave plates 206.
This imaging system also comprises the second concavees lens L2 and the 3rd convex lens L3, is used for expanding surveying light.The 3rd convex lens L3 is arranged in and surveys light (III) irradiation crystal detection light path before; The second concavees lens L2 is positioned at the focus place of the 3rd convex lens L3 plane of incidence one side.
This imaging system also comprises ITO (nano indium tin metal oxide) electro-conductive glass 208, be positioned at the plane of incidence one side of sample rack, this ITO electro-conductive glass 208 can reflected terahertz light, transmission near infrared light now, shine on the specimen after so the pump light that will propagate along direction as shown in Figure 2 and terahertz light overlap.
This imaging system also comprises half-reflecting half mirror 209, be positioned at the intersection of described detection light and crystal detection axis, be used for reflecting and transmission with the ratio that equates surveying light, in the embodiment of the invention, 50% detection light is reflexed on the crystal detection by half-reflecting half mirror, it is obtained after the terahertz light information after the reflection of the surface of crystal detection again, and 50% reflection is surveyed light and is seen through the imaging moiety that half-reflecting half mirror arrives this system again.
This imaging system also comprises λ/4 wave plates 210, polarization beam splitter prism 211, the 4th convex lens L4 and the 5th convex lens L5.Wherein, polarization beam splitter prism is arranged in surveys light transmission half-reflecting half mirror light path afterwards, be used for to be divided into two mutually perpendicular linearly polarized light beams in polarization direction through the detection light of half-reflecting half mirror, utilize Terahertz Difference Imaging technology, realize difference measurement at imaging device, greatly the optimization system signal to noise ratio (S/N ratio); λ/4 wave plates are positioned at the plane of incidence one side of polarization beam splitter prism, are used for adjusting the light intensity of the two bunch polarized lights that are divided into, so that the light intensity of two-beam equates; The 4th convex lens L4 is positioned at the plane of incidence one side of polarization beam splitter prism, is used for surveying the light convergence and incides polarization beam splitter prism; The 5th convex lens L5 is positioned at exit facet one side of polarization beam splitter prism, shines after the detection light that is used for the two bunch polarizations that will be divided into collimates respectively and carries out imaging measurement on the imaging device.
This imaging system also comprises first motorized precision translation stage 212, is arranged in the light path of pump light, is used for continuously changing the optical path difference between pump light and the terahertz light.This first motorized precision translation stage comprises plane mirror M1 and M2, in order to change the direction of propagation of pump light.
This imaging system also comprises second motorized precision translation stage 213, is arranged in the light path of terahertz light or the light path of detection light, is used for continuously changing the optical path difference between terahertz light and the detection light.This second motorized precision translation stage comprises plane mirror M5 and M6, in order to change the direction of propagation of terahertz light or detection light.
Preferably, in the imaging system of the embodiment of the invention, it is same femtosecond pulse laser that pump light generating apparatus, detection photogenerated device and Terahertz produce the photogenerated device, and namely pump light I, detection light III and Terahertz produce the femtosecond pulse laser that light IV results from homology.As shown in Figure 2, this imaging system also comprises λ/2 wave plate 214-215 and polarization beam splitter prism 216-217.Polarization beam splitter prism 216 is used for femtosecond pulse light V with the horizontal polarization of laser emitting, and to be divided into the mutually perpendicular linearly polarized light in two bundle polarization directions be horizontal linear polarization light VI and vertical curve polarized light I, with vertical curve polarized light I as pump light.λ/2 wave plates 214 are positioned at the plane of incidence one side of polarization beam splitter prism 216, are used for regulating the relative light intensity of horizontal linear polarization light VI and vertical curve polarized light I.Polarization beam splitter prism 217 is arranged in the light path of horizontal linear polarization light VI, being used for again horizontal linear polarization light VI being divided into the mutually perpendicular linearly polarized light in two bundle polarization directions is horizontal linear polarization light IV and vertical curve polarized light III, horizontal linear polarization light is produced light as Terahertz, and vertical curve polarized light III is as surveying light.λ/2 wave plates 215 are positioned at the plane of incidence one side of polarization beam splitter prism 217, are used for regulating the relative light intensity of horizontal linear polarization light IV and vertical curve polarized light III.
Imaging system of the present utility model also comprises mirror M 3-4, M7-10, is distributed in appropriate location in this system, is used for changing the direction of propagation of light beam.
Imaging system of the present utility model provides pump light, detection light and the Terahertz of homology to produce light by the Spectra-physics laser instrument, the centre wavelength of the femtosecond pulse of this laser instrument emission is 800nm, duration of pulse is 50fs, repetition frequency is 1kHz, and the single photon energy is 1.55eV.This imaging system is through modulation, and pump light is surveyed the average-power-range that light and Terahertz produce light and is respectively 50-100mW, 8-10mW and 650-700mW.Terahertz produces crystal by adopting ZnTe crystal, and the electric field intensity scope of the terahertz light that produces by the optical rectification effect is 5-10kV/cm, and frequency is 0.2-2.5THz.
The course of work of imaging system of the present utility model is as follows:
(1) as shown in Figure 2, femtosecond laser by laser emitting after successively by λ/2 wave plates 214, polarization beam splitter prism 216, λ/2 wave plates 215 and polarization beam splitter prism 217, through producing three road light beams after twice beam splitting, be respectively the detection light of the pump light of vertical polarization, vertical polarization and the Terahertz of horizontal polarization and produce light.
(2) pump light incides on the specimen, excites the photic characteristic of specimen.When being semiconductor samples as specimen, semi-conductive valence band Electron absorption photon energy transits to conduction band, forms the photic charge carrier of transient state, therefore produces specific photic charge carrier at semiconductor samples and distributes.The conductivity enhancing that this photic charge carrier distributes and causes semiconductor samples, specific inductive capacity and magnetic permeability also change.
(3) Terahertz produces light and arrives the first concavees lens L1 through mirror M 5-7, disperses to incide on the Terahertz generation crystal, produces terahertz light by the nonlinear optical switching process; The terahertz light of dispersing after throwing face mirror collimation, utilize again the ITO electro-conductive glass with its with incide on the semiconductor samples after the direction of propagation of pump light overlaps; Because the conductivity of this semiconductor samples strengthens, its absorption to terahertz pulse also strengthens thereupon, caused the decline of semiconductor samples to the terahertz light transmissivity, namely the photic charge carrier on the semiconductor samples distributes the wavefront that shines the Terahertz electric field on the semiconductor samples is modulated.Therefore comprised the distribution character of photic charge carrier on the semiconductor samples in the terahertz light by semiconductor samples.Terahertz light continues to shine on the crystal detection, and the index ellipsoid by electrooptical effect modulation crystal detection, so the modulation that photic charge carrier distributes to terahertz light on the semiconductor just is reflected on the crystal detection.
(4) survey light behind mirror M 8-10, expanded through the second concavees lens L2 and the 3rd convex lens L3 successively, adjust its polarization state through λ/2 wave plates 206, and arrive half-reflecting half mirror 209 after protecting partially by polaroid 207 to it, surveying light through the reflection of half-reflecting half mirror incides on the crystal detection along the direction with the reverse conllinear of terahertz light, again by crystal detection surface vertical reflection to half-reflecting half mirror, the imaging moiety that light is transmitted to system is surveyed in transmission through half-reflecting half mirror, survey polarization state of light this moment owing to the modulation of Terahertz electric field to crystal detection changes thereupon, therefore survey the information of having carried terahertz light in the light, also obtained the distributed intelligence of photic charge carrier on the specimen indirectly.
(5) at imaging moiety, survey light and incide on the polarization beam splitter prism through the 4th convex lens L4 post-concentration, be divided into two mutually perpendicular linearly polarized light beams in polarization direction.Before surveying light arrival polarization beam splitter prism, adjusted surveying polarization state of light by λ/4 wave plates, the light intensity of two bunch polarized lights after separating is equated.The detection light of two bunch polarizations incides on the imaging device after the 5th convex lens L5 collimates respectively again.Imaging device adopts Terahertz Difference Imaging technology to carry out difference measurement, the record experimental data, and particularly, two image subtractions that imaging device will collect are as the value of Terahertz electric field.
As mentioned above, Terahertz time-space resolution imaging system of the present utility model is introduced Terahertz focal plane imaging technology in the Terahertz time resolved spectroscopy measuring system, be about to Terahertz time resolved spectroscopy technology and Digital Holography and organically combine, realize the time-space resolution imaging measurement to the photic characteristic of specimen (distributing as the photic charge carrier of semiconductor).By changing the time delay between terahertz light and the pump light and extracting the tera-hertz spectra constant, reflect that the time domain of the photic characteristic of specimen changes; Adopt the diverse location of Terahertz hot spot irradiation specimen, can observe the space distribution rule of the photic characteristic of specimen; By the electro optic sampling method Terahertz two-dimensional signal is loaded on the detection polarization state of light, and utilizes imaging device to extract by the method for difference detecting.This imaging system can shorten experimental period effectively, and the Two dimensional Distribution that can reflect the Terahertz electric field more realistically, finally obtain the four-dimensional spectral information of specimen, realization presents specimen accurately and excites the overall picture of phase transformation down at ultrafast laser the accurately observation comprehensively of specimen space-time evolution process.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is embodiment of the present utility model; and be not used in and limit protection domain of the present utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (21)
1. Terahertz time-space resolution imaging system is characterized in that described system comprises:
Sample rack (201);
Crystal detection (202);
Pump light generating apparatus (218);
The terahertz light generating apparatus;
Survey photogenerated device (219); With
Imaging device (203) is arranged in and surveys light (III) through described crystal detection (202) light path afterwards.
2. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described imaging device is charge coupled cell, and charge coupled cell is the CCD camera.
3. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described specimen is Si semiconductor or GaAs semiconductor.
4. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described crystal detection (202) is close to described sample rack (201).
5. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, the electro-optic crystal of described crystal detection (202) for having electrooptical effect.
6. Terahertz time-space resolution imaging system according to claim 5 is characterized in that, described electro-optic crystal is ZnTe crystal or GaP crystal.
7. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described terahertz light generating apparatus comprises that Terahertz produces photogenerated device (220) and Terahertz produces crystal (204).
8. Terahertz time-space resolution imaging system according to claim 7 is characterized in that, it is ZnTe crystal, LiNbO that described Terahertz produces crystal (204)
3Crystal or GaAs crystal.
9. Terahertz time-space resolution imaging system according to claim 7, it is characterized in that it is same femtosecond pulse laser that described pump light generating apparatus (218), described detection photogenerated device (219) produce photogenerated device (220) with described Terahertz.
10. Terahertz time-space resolution imaging system according to claim 9 is characterized in that, wavelength is 800nm centered by the laser beam that described femtosecond pulse laser generates, and the duration of pulse is 50fs, and repetition frequency is the horizontal linear polarization light (V) of 1kHz.
11. Terahertz time-space resolution imaging system according to claim 10 is characterized in that, described Terahertz time-space resolution imaging system also comprises:
First polarization beam splitter prism (216) is arranged in the light path of the first horizontal linear polarization light (V);
The one λ/2 wave plates (214) is positioned at the plane of incidence one side of described first polarization beam splitter prism (216);
Second polarization beam splitter prism (217) is arranged in the light path of the second horizontal linear polarization light (VI); With
The 2nd λ/2 wave plates (215) is positioned at the plane of incidence one side of described second polarization beam splitter prism (217).
12. Terahertz time-space resolution imaging system according to claim 7 is characterized in that described time-space resolution imaging system also comprises mechanical chopper (205), is electrically connected with described imaging device (203).
13. Terahertz time-space resolution imaging system according to claim 12, it is characterized in that, described mechanical chopper (205) is arranged in the light path before the described specimen of described pump light (I) irradiation, or is arranged in the described Terahertz generation crystal (204) of Terahertz generation light (IV) irradiation light path before.
14. Terahertz time-space resolution imaging system according to claim 7 is characterized in that, described time-space resolution imaging system also comprises:
First concavees lens (L1) are positioned at the plane of incidence one side that described Terahertz produces crystal (204); With
Throwing face mirror (PM1) is positioned at exit facet one side that described Terahertz produces crystal (204).
15. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described time-space resolution imaging system also comprises:
λ/2 wave plates (206) is arranged in described detection light (III) and shines described crystal detection (202) light path before; With
Polaroid (207) is positioned at exit facet one side of described λ/2 wave plates (206).
16. Terahertz time-space resolution imaging system according to claim 1 is characterized in that, described time-space resolution imaging system also comprises:
The 3rd convex lens (L3) are arranged in described detection light (III) and shine described crystal detection (202) light path before; With
Second concavees lens (L2) are positioned at the focus place of described the 3rd convex lens (L3) plane of incidence one side.
17. Terahertz time-space resolution imaging system according to claim 1, it is characterized in that, described time-space resolution imaging system also comprises nano indium tin metal oxide (ITO) electro-conductive glass (208), is positioned at described sample rack (201) plane of incidence one side.
18. Terahertz time-space resolution imaging system according to claim 1 is characterized in that described time-space resolution imaging system also comprises half-reflecting half mirror (209), is positioned at the intersection of described detection light (III) and crystal detection (202) axis.
19. Terahertz time-space resolution imaging system according to claim 18 is characterized in that, described time-space resolution imaging system also comprises:
Polarization beam splitter prism (211) is arranged in described detection light (III) and sees through described half-reflecting half mirror (209) light path afterwards;
λ/4 wave plates (210) is positioned at the plane of incidence one side of described polarization beam splitter prism (211);
The 4th convex lens (L4) are positioned at the plane of incidence one side of described polarization beam splitter prism (211); With
The 5th convex lens (L5) are positioned at exit facet one side of described polarization beam splitter prism (211).
20. Terahertz time-space resolution imaging system according to claim 1 is characterized in that described time-space resolution imaging system also comprises first motorized precision translation stage (212), is arranged in the light path of pump light (I).
21. Terahertz time-space resolution imaging system according to claim 1 is characterized in that described time-space resolution imaging system also comprises second motorized precision translation stage (213), is arranged in the light path of terahertz light (II) or described detection light (III).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091255A (en) * | 2013-01-15 | 2013-05-08 | 首都师范大学 | Terahertz time-space resolution imaging system, imaging method and application thereof |
| CN105866773A (en) * | 2016-05-16 | 2016-08-17 | 吉林大学 | High-power terahertz continuous wave two-dimensional imaging system |
| CN113218909A (en) * | 2021-05-06 | 2021-08-06 | 南京大学 | Terahertz near field real-time imaging system considering spectral information |
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2013
- 2013-01-15 CN CN 201320019407 patent/CN203224435U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091255A (en) * | 2013-01-15 | 2013-05-08 | 首都师范大学 | Terahertz time-space resolution imaging system, imaging method and application thereof |
| CN103091255B (en) * | 2013-01-15 | 2016-03-30 | 首都师范大学 | Terahertz time-space resolution imaging system, formation method and application thereof |
| CN105866773A (en) * | 2016-05-16 | 2016-08-17 | 吉林大学 | High-power terahertz continuous wave two-dimensional imaging system |
| CN113218909A (en) * | 2021-05-06 | 2021-08-06 | 南京大学 | Terahertz near field real-time imaging system considering spectral information |
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