CN203218326U - Ultraviolet-enhanced composite film based on quantum point - Google Patents
Ultraviolet-enhanced composite film based on quantum point Download PDFInfo
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- CN203218326U CN203218326U CN 201320095636 CN201320095636U CN203218326U CN 203218326 U CN203218326 U CN 203218326U CN 201320095636 CN201320095636 CN 201320095636 CN 201320095636 U CN201320095636 U CN 201320095636U CN 203218326 U CN203218326 U CN 203218326U
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Abstract
The utility model discloses an ultraviolet-enhanced composite film based on a quantum point. The ultraviolet-enhanced composite film based on the quantum point comprises a bottom layer quartz substrate, a poly-3,4-ethylenedioxy thiophene/polystyrene sulfonate film layer, poly-4-butyl triphenylamine film layer and a quantum point film layer from bottom to top in sequence; the poly-3,4-ethylenedioxy thiophene/polystyrene sulfonate film layer, the poly-4-butyl triphenylamine film layer and the quantum point film layer are formed by coating films through a spin coating method or a czochralski method. As the ultraviolet-enhanced composite film provided by the utility model contains the poly-3,4-ethylenedioxy thiophene/polystyrene sulfonate film layer and the poly-4-butyl triphenylamine film layer, light scattering on the ultraviolet-enhanced single-layered film surface is reduced, the light emitting capability of the ultraviolet-enhanced single-layered film is enhanced, particularly the light emitting efficiency of the deep ultraviolet wave band is enhanced, thereby providing effective means for the application of the quantum point in the ultraviolet-enhanced film.
Description
Technical field
The utility model relates to a kind of compound ultraviolet enhanced film based on quantum dot.
Background technology
The quantum dot fluorescence life-span is long, have wide excitation spectrum and narrow emission spectra, emission wavelength to be subjected to advantage such as quantum dot size Control to be widely used in numerous areas such as LED, biological detection.And for silica-based image device, since itself for the ultraviolet band response ratio a little less than, institute thinks that strengthening its ultraviolet responds, begin both at home and abroad extensively ultraviolet frequency conversion film to be studied, the organic frequency conversion film of original main employing and two kinds of materials of inorganic frequency conversion film, organic frequency conversion membrane technology is ripe relatively, also has relevant patent to occur., but such film has fatal shortcoming, and it is very fast that is exactly organic molecule degradation speed under ultra-violet radiation.Be 1 μ W/cm in illuminance
2Illumination under, organic molecule is with up to per hour 3% speed exponentially degraded.So carry out the research for inorganic frequency conversion film.Inorganic fluorescent material normally is made up of rare earth oxide and catalyst, and the crystal diameter of inorganic fluorescent material is generally at 1-150 μ m.Therefore, although the thin-film light emitting time (life-span) that the method that precipitates with spin coating prepares is quite long, generally can reach 5500h, also there are many defectives in the film gauge uniformity of preparation etc.
The quantum dot film is a kind of emerging material, yet the quantum dot film mainly is based on the individual layer ultraviolet enhanced film of quantum dot at present, and should be very low at ultraviolet band especially deep ultraviolet wave band luminous efficiency based on the individual layer ultraviolet enhanced film of quantum dot.Strengthen if can be applied to ultraviolet, just native defect can be solved, and make its conversion efficiency obviously strengthen.
Summary of the invention
The purpose of this utility model is to provide a kind of compound ultraviolet enhanced film based on quantum dot in order to solve the above-mentioned individual layer ultraviolet enhanced film based on quantum dot in the ultraviolet band technical problem that especially deep ultraviolet wave band luminous efficiency is very low.
The technical solution of the utility model
A kind of compound ultraviolet enhanced film based on quantum dot, be layer structure, comprise quartz substrate, quantum dot thin layer, also comprise poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer and poly-4-butyl triphenylamine thin layer, be followed successively by the quantum dot thin layer of bottom quartz substrate, poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer, poly-4-butyl triphenylamine thin layer and the superiors from bottom to top;
Described quantum dot thin layer is CdSe/ZnS nuclear shell structure quantum point thin layer;
Described poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer and poly-4-butyl triphenylamine thin layer and quantum dot thin layer form by spin-coating method plated film or czochralski method plated film.
The preparation method of above-mentioned a kind of compound ultraviolet enhanced film based on quantum dot specifically comprises the steps:
(1), quartz substrate is cleaned through deionized water, propyl alcohol, ethanol, b propanol successively, it is clean to pass through ultrasonic cleaning again
(2), will gather 3, on the quartz substrate after the polystyrolsulfon acid solution of 4-Ethylenedioxy Thiophene/polystyrolsulfon acid cleans to step (1) by rotary process plated film or czochralski method plated film, putting into baking oven behind the plated film toasts, temperature is 150 ℃, after time is 30min, obtain poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer;
Described poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid solution is that solid content is poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid solution of 1%;
(3), will gather 4-butyl triphenylamine solution again and arrive poly-3 by rotation plating method film or czochralski method plated film, on 4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer, put into baking oven behind the plated film and toast, temperature is 120 ℃, and the time is to obtain poly-4-butyl triphenylamine thin layer behind the 30min;
Described poly-4-butyl triphenylamine solution is poly-4-butyl triphenylamine to be dissolved in the chlorobenzene reagent form, and the poly-4-butyl triphenylamine that concrete proportioning is 10mg is to be dissolved in the chlorobenzene 1ml reagent;
(4), again with quantum dot solution by rotary process plated film or czochralski method plated film to poly-4-butyl triphenylamine thin layer, putting into baking oven behind the plated film toasts, toast 80 ℃, obtain the quantum dot thin layer behind the 20min, finally obtain the compound ultraviolet enhanced film based on quantum dot;
Described quantum dot solution is the CdSe/ZnS nuclear shell structure quantum point to be dissolved in the toluene solvant form, and the CdSe/ZnS nuclear shell structure quantum point that concrete proportioning is 5mg is dissolved in 1ml toluene, and the particle diameter of CdSe/ZnS nuclear shell structure quantum point is preferably 5nm.
A kind of compound ultraviolet enhanced film based on quantum dot of above-mentioned gained is applied to silica-based image device ultraviolet and strengthens use.
The beneficial effects of the utility model
A kind of compound ultraviolet enhanced film based on quantum dot of the present utility model, owing to contain poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer and poly-4-butyl triphenylamine thin layer, thereby reduced the scattering of light based on the compound ultraviolet enhanced film surface of quantum dot, and then strengthened its luminous power, particularly deep ultraviolet wave band luminous efficiency is enhanced, so a kind of compound ultraviolet enhanced film based on quantum dot of the present utility model, solved original individual layer ultraviolet enhanced film based on quantum dot and especially solved in the lower problem of dark purple place wave band (190nm) luminous efficiency in the lower problem of ultraviolet band luminous efficiency, for quantum dot provides effective means in the application of ultraviolet enhanced film.
Further, a kind of roughness test of compound ultraviolet enhanced film under the AFM atomic force microscope based on quantum dot of the present utility model, final result shows that the roughness of film surface reduces, and then reduces scattering of light, has effectively improved luminous efficiency.
Description of drawings
The structural representation based on the compound ultraviolet enhanced film of quantum dot among Fig. 1, the embodiment 1, wherein 1 is that quartz substrate, 2 is the quantum dot thin layer for gathering 3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer, 3 for gathering 4-butyl triphenylamine thin layer and 4;
The structural representation based on the individual layer ultraviolet enhanced film of quantum dot in Fig. 2, the comparative examples, wherein 1 is that quartz substrate, 2 is the quantum dot thin layer;
Fig. 3,190nm deep ultraviolet excite compound ultraviolet enhanced film based on quantum dot, based on the luminescent spectrum of the individual layer ultraviolet enhanced film of quantum dot.
Embodiment
Also by reference to the accompanying drawings the utility model is further set forth below by specific embodiment, but do not limit the utility model.
The 650-23NPP spin coating instrument that the employed equipment of rotary plating is produced for Mycro Technologies among each embodiment of the present utility model; The used equipment of ultrasonic cleaning is the KQ5200DE type numerical control supersonic cleaning apparatus that Kunshan Ultrasonic Instruments Co., Ltd. produces.
Used solvent chlorobenzene, toluene is and analyzes alcohol among each embodiment of the present utility model, and Shanghai Ling Feng chemical reagent Co., Ltd produces.
A kind of compound ultraviolet enhanced film based on quantum dot, be layer structure, its structural representation is followed successively by quartz substrate 1, poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer 2, poly-4-butyl triphenylamine thin layer 3 and the quantum dot thin layer 4 of bottom from bottom to top as shown in Figure 2;
Described quantum dot thin layer 4 is CdSe/ZnS nuclear shell structure quantum point thin layer;
Described poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer 2 and poly-4-butyl triphenylamine thin layer 3 and quantum dot thin layer 4 are to form by the spin-coating method plated film.
The preparation method of above-mentioned a kind of compound ultraviolet enhanced film based on quantum dot specifically comprises the steps:
(1), quartz substrate 1 is cleaned through deionized water, propyl alcohol, ethanol, b propanol successively, it is clean to pass through ultrasonic cleaning again;
(2), will gather 3, on the quartz substrate after 4-Ethylenedioxy Thiophene/polystyrolsulfon acid solution cleans to step (1) by rotary process plated film plated film, rotating speed is 1500r/min, putting into baking oven behind the plated film toasts, temperature is 150 ℃, time obtains poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer after being 30min;
Described poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid solution is that solid content is poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid solution of 1%;
(3), will gather 4-butyl triphenylamine solution again by rotation plating method film plated film poly-3, on 4-Ethylenedioxy Thiophene/polystyrolsulfon acid layer, rotating speed is 1200r/min, puts into baking oven behind the plated film and toasts, temperature is 120 ℃, and the time is to obtain poly-4-butyl triphenylamine thin layer behind the 30min;
Described poly-4-butyl triphenylamine solution is poly-4-butyl triphenylamine to be dissolved in the chlorobenzene reagent form, and the poly-4-butyl triphenylamine that concrete proportioning is 10mg is to be dissolved in the chlorobenzene 1ml reagent;
(4), again with quantum dot solution by the rotary process plated film to poly-4-butyl triphenylamine thin layer, rotating speed is 1000r/min, puts into baking oven behind the plated film and toasts, and toasts 80 ℃, obtain the quantum dot thin layer behind the 20min, finally obtain the compound ultraviolet enhanced film based on quantum dot;
Described quantum dot solution is to be that the CdSe/ZnS nuclear shell structure quantum point of 5nm is dissolved in the toluene solvant and forms with particle diameter, and the CdSe/ZnS nuclear shell structure quantum point that concrete proportioning is 5mg is dissolved in 1ml toluene.
Comparative examples
A kind of individual layer ultraviolet enhanced film based on quantum dot is 2 layers layer structure, and its structural representation comprises the quartz substrate 1 of bottom and the quantum dot thin layer 2 on upper strata as shown in Figure 2;
Described quantum dot thin layer 2 is CdSe/ZnS nuclear shell structure quantum point thin layer;
Described quantum dot thin layer forms by the spin-coating method plated film.
The preparation method of above-mentioned a kind of individual layer ultraviolet enhanced film based on quantum dot specifically comprises the steps:
(1), quartz substrate 1 cleaned through deionized water, propyl alcohol, ethanol, b propanol successively after, it is clean to pass through ultrasonic cleaning again;
(2), with the surface of quanta point material rotary process plated film to quartz substrate 1, rotating speed is 1000r/min, puts into baking oven behind the plated film and toasts, 80 ℃ of bakings obtain the quantum dot thin layer behind the 20min, namely get the individual layer ultraviolet enhanced film based on quantum dot;
It is that the CdSe/ZnS nuclear shell structure quantum point of 5nm is dissolved in and namely gets quanta point material in the toluene solvant that described quanta point material is about to particle diameter, and the CdSe/ZnS nuclear shell structure quantum point that concrete proportioning is 5mg is dissolved in 1ml toluene.
The individual layer ultraviolet enhanced film based on quantum dot based on the compound ultraviolet enhanced film of quantum dot and comparative examples gained of above-described embodiment 1 gained is tested at the Chinese light ZLX-PL-1 fluorescence spectrum test macro of standing upright respectively and obtained measuring its luminescent spectrum under 190nm deep ultraviolet shooting condition, the result as shown in Figure 3, composite quantum dot film among the figure is the luminescent spectrum based on the compound ultraviolet enhanced film of quantum dot of gained among the embodiment 1, individual layer quantum dot film among the figure is the luminescent spectrum based on the compound ultraviolet enhanced film of quantum dot of comparative examples gained, as can be seen from Figure 3, the emission spectra peak wavelength of two kinds of ultraviolet enhanced film all is positioned at about 480nm, but the compound ultraviolet enhanced film based on quantum dot of gained among the embodiment 1, the intensity of its emission peak is 345099, and the emission peak intensity based on the individual layer ultraviolet enhanced film of quantum dot of comparative examples gained is 4011, and as seen the luminous intensity based on the compound ultraviolet enhanced film of quantum dot significantly improves.
The individual layer ultraviolet enhanced film based on quantum dot based on the compound ultraviolet enhanced film of quantum dot and comparative examples gained of above-described embodiment 1 gained is tested its r.m.s. roughness Rq and arithmetic average roughness Ra respectively under the XE-100 type atomic force microscope that PARK company produces, its test result sees the following form:
| Film type | Rq (nm) | Ra (nm) |
| Quantum dot individual layer ultraviolet enhanced film | 9.116 | 7.205 |
| The compound ultraviolet enhanced film of quantum dot | 5.209 | 4.251 |
As can be seen from the above table, all be lower than individual layer ultraviolet enhanced film based on quantum dot based on the Rq of the compound ultraviolet enhanced film of quantum dot and Ra, just because of the roughness that has reduced based on the individual layer ultraviolet enhancing of quantum dot, just make and reduced scattering of light, the luminous efficiency of enhancing.
In sum, a kind of composite quantum dot ultraviolet enhanced film of the present utility model, owing in the middle of the quantum dot thin layer of bottom quartz substrate and the superiors, increased poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer and poly-4-butyl triphenylamine thin layer, thereby reduced the scattering of light based on the individual layer ultraviolet enhanced film surface of quantum dot, and then strengthened its luminous power, particularly deep ultraviolet wave band luminous efficiency is obviously strengthened, for a kind of efficiently based on the compound ultraviolet enhanced film of quantum dot.
Foregoing only is the basic explanation under the utility model design, and according to any equivalent transformation that the technical solution of the utility model is done, all should belong to protection range of the present utility model.
Claims (2)
1. the compound ultraviolet enhanced film based on quantum dot is layer structure, comprises quartz substrate, quantum dot thin layer, it is characterized in that also comprising by poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer and poly-4-butyl triphenylamine thin layer;
Described a kind of compound ultraviolet enhanced film based on quantum dot is followed successively by the quantum dot thin layer of bottom quartz substrate, poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer, poly-4-butyl triphenylamine thin layer and the superiors from bottom to top;
Described quantum dot thin layer is CdSe/ZnS nuclear shell structure quantum point thin layer;
Described poly-3,4-Ethylenedioxy Thiophene/polystyrolsulfon acid thin layer, poly-4-butyl triphenylamine thin layer and quantum dot thin layer form by spin-coating method plated film or czochralski method plated film.
2. a kind of compound ultraviolet enhanced film based on quantum dot as claimed in claim 1, the particle diameter that it is characterized in that described CdSe/ZnS nuclear shell structure quantum point is 5nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103151450A (en) * | 2013-03-04 | 2013-06-12 | 上海理工大学 | Ultraviolet-enhanced composite film based on quantum point and preparation method thereof |
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| CN103151450A (en) * | 2013-03-04 | 2013-06-12 | 上海理工大学 | Ultraviolet-enhanced composite film based on quantum point and preparation method thereof |
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