CN103441154B - A kind of ZnO nanometer array ultraviolet detector and preparation method thereof - Google Patents

A kind of ZnO nanometer array ultraviolet detector and preparation method thereof Download PDF

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CN103441154B
CN103441154B CN201310259647.1A CN201310259647A CN103441154B CN 103441154 B CN103441154 B CN 103441154B CN 201310259647 A CN201310259647 A CN 201310259647A CN 103441154 B CN103441154 B CN 103441154B
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zno
substrate
electrode
ultraviolet detector
conductive glass
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CN201310259647.1A
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CN103441154A (en
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张跃
衣芳
廖庆亮
黄运华
闫小琴
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北京科技大学
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

A kind of ZnO nanometer array ultraviolet detector of the present invention and preparation method thereof, this device architecture is metal-semiconductor-metal contact-type, be followed successively by the substrate of ITO or FTO electro-conductive glass from top to bottom, cover suprabasil ZnO film, be positioned at the other end electrode in the centre position of ZnO film, and the ZnO nano array of other end electrode surrounding, substrate is simultaneously a termination electrode; The area of other end electrode is 10% ~ 12% of the substrate gross area.Preparation method is as follows: first utilize magnetron sputtering in substrate, grow layer of ZnO film; Then one end wire is drawn at ZnO film top electrode; Then on electrode, PDMS protective layer is covered; Again by Hydrothermal Growth ZnO nano array; Finally wipe part ZnO off in sample side edge make electro-conductive glass substrate exposed and draw other end wire, obtain described ultraviolet detector.The present invention have manufacture craft simple, be easy to operation, with low cost, device sensitivity is high, steady performance.

Description

A kind of ZnO nanometer array ultraviolet detector and preparation method thereof
Technical field
The invention belongs to nano material and nano functional device preparing technical field, relate to the manufacture method of a kind of ZnO nanometer array ultraviolet detector and this ultraviolet detector.
Background technology
Ultraviolet detector is widely used in scientific research, military affairs, space, environmental protection and many industrial circles, and as the ultraviolet light monitor in spaceship, ozone layer solar ultraviolet monitors, hot background flame detecting, waste gas supervision etc.; Also can be used for medical science, biology etc.; Also can be used as UV-A (230 ~ 400nm), UV-B (280 ~ 320nm) ultraviolet quantifier in daily life for the individual in the rich ultraviolet environments such as seabeach, high mountain.
ZnO is a kind of broad stopband direct band gap compound semiconductor materials, and energy gap is about 3.37 eV, and exciton bind energy is up to 60 meV.ZnO UV Stimulated radiation at room temperature has the characteristics such as high light gain, high-energy conversion efficiency and high photoresponse, can be used for making ultraviolet detector.Compared with other semiconductor ultraviolet detection devices, ZnO ultraviolet detector has chemistry and Heat stability is good, fusing point and exciton bind energy high, dynamo-electric lotus root conjunction property is good, raw material is easy to get, electronics induced defects is low etc. advantage.Early stage ZnO ultraviolet detector is mostly based on ZnO film, and Recent study person starts trial One-Dimensional ZnO nano material to build high-sensitive ultraviolet detector.This is mainly because One-Dimensional ZnO nano material has high specific area and high inside photoconductive gain, the photoelectric response performance of the ultraviolet detector built with it improves greatly, therefore, the ultraviolet detector based on One-Dimensional ZnO nano material has huge development potentiality.
One-Dimensional ZnO nano material is used for can building by the single ZnO nano material of Selection utilization when building ultraviolet detector, also can Selection utilization ZnO nano array build.The ultraviolet detector built with single ZnO nano material has faint photoelectric current usually, thus hinders its development in practical application; By contrast, then have larger extinction area and the stability of Geng Gao with the ultraviolet detector that ZnO nano array builds, this superiority makes ZnO nanometer array ultraviolet detector have boundless actual application prospect.But, the making of current ZnO nanometer array ultraviolet detector but often needs the technique of very loaded down with trivial details costliness, therefore how Simplified flowsheet, to reduce costs and to improve device performance extremely important for the large-scale production realizing ZnO nanometer array ultraviolet detector.
Summary of the invention
In order to solve the problem, the object of this invention is to provide a kind of manufacture craft simplifying ZnO nanometer array ultraviolet detector, increase device extinction area simultaneously and then improving device photoelectric response performance znO nanometer array ultraviolet detector and preparation method thereof.
Technical scheme of the present invention is: a kind of ZnO nanometer array ultraviolet detector, this device architecture is metal-semiconductor-metal contact-type, be followed successively by the substrate of ITO or FTO electro-conductive glass from top to bottom, cover described suprabasil ZnO film, be positioned at a termination electrode in described ZnO film centre position, and the ZnO nano array of a described termination electrode surrounding, described substrate is simultaneously other end electrode; Wherein, a described termination electrode is Ag or Pt; The area of one termination electrode is 10% ~ 12% of the substrate gross area.
Another object of the present invention is to provide a kind of manufacture method of above-mentioned ZnO nanometer array ultraviolet detector, specifically comprises the following steps:
Step 1. will with ITO or FTO electro-conductive glass for substrate, and described substrate carries out ultrasonic cleaning with acetone, ethanol and isopropyl alcohol successively, dries up with nitrogen, for subsequent use;
ITO or the FTO electro-conductive glass substrate that step 2. utilizes magnetron sputtering method to process in above-mentioned steps (1) deposits the ZnO film that a layer thickness is 200 ~ 250 nm, near the middle position of ZnO film, putting Ag glue again or putting Pt slurry and draw wire is a termination electrode, place 4 ~ 8 h and make electrode mummification, wherein the area of a termination electrode is 10% ~ 12% of the substrate gross area;
Step 3. covers one deck and has added curing agent and room temperature places the dimethyl silicone polymer (PDMS) after 0.5 ~ 1.5 h on Ag or Pt electrode, heats 35 ~ 45 min and solidify completely to dimethyl silicone polymer (PDMS) electrode protecting layer in the baking oven of 60 ~ 70 DEG C;
The substrate of gained after step 3 processes to be put into container growth 8 ~ 14 h filling growth-promoting media and is obtained ZnO nano array by step 4., dries after terminating growth by washed with de-ionized water;
Step 5. the side edge of the sample of gained after preparing through step 4 is wiped off the ZnO layer (i.e. ZnO nano permutation and ZnO film) accounting for the sample gross area 7% ~ 9% make this place ITO or the substrate of FTO electro-conductive glass exposed, it is other end electrode that the electro-conductive glass substrate of exposing picks out wire, namely obtains ZnO nanometer array ultraviolet detector.
The present invention has following characteristics:
1. adopt growth substrate, i.e. electro-conductive glass, as a termination electrode, simplify electrode construction procedures and improve carrier collection efficiency.
2. avoid and fill insulator in ZnO nano array, so both shorten the extinction area that technological process also substantially increases device.
3. whole experimentation does not relate to pyroreaction, does not relate to hazardous chemicals, safety and be easy to operation.
Accompanying drawing explanation
Fig. 1 is the field emission scanning electron microscope photo schematic diagram of ZnO nano array.(a) vertical view; (b) sectional view.
Fig. 2 is (a) XRD spectra and (b) PL spectrogram of ZnO nano array.
Fig. 3 is the structural representation of ZnO nanometer array ultraviolet detector.
Fig. 4 is that the device prepared of the present invention is to the curve synoptic diagram of the photoelectric response characteristic of 365 nm ultraviolet lights.(a) I-V curve; (b) time response curve; The reperformance test curve of (c) time response.
in figure
1. substrate, 2. other end electrode, 3 is PDMS, 4ZnO nano thin-film, 5.ZnO nano-array, 6. a termination electrode.
Embodiment
Below in conjunction with example, technical scheme of the present invention is described in detail.
embodiment 1:
1) with acetone, ethanol and isopropyl alcohol, ultrasonic cleaning is carried out successively to the ITO electro-conductive glass that size is 9 mm × 12 mm, dry up with nitrogen; 2) on ITO electro-conductive glass by the ZnO film that Grown by Magnetron Sputtering a layer thickness is 200 nm, select purity be 99.999% ZnO target, radio-frequency power supply, sputter rate is 0.018 nm/s; 3) near ZnO film middle position, put Ag glue and room temperature is placed 4 h and made its mummification, the Ag electrode diameter that does is 1.8 mm; 4) Ag electrode surface cover one deck added curing agent and room temperature place 45 min after polydimethylsiloxane, in 65 DEG C of baking oven, then heat 40 min PDMS electrode protecting layer solidified; 5) gained substrate is put into 95 DEG C, container growth, 14 h filling 0.05 M growth-promoting media (deionized water, zinc nitrate and hexamethylenetetramine), after growth, washed with de-ionized water carried out to sample and dry; 6) the side edge being 12 mm at sample length wipes the wide ZnO of 3 mm off and exposes the substrate of ITO electro-conductive glass, obtains ZnO nano array area and is about 9 mm × 9 mm; 7) draw in exposed ITO electro-conductive glass substrate wire namely obtain this patent invent the device of making.
embodiment 2:
The ultraviolet detector of the present embodiment is substantially the same manner as Example 1, and difference is: embodiment 1 step 2) in the ZnO film thickness that deposits of magnetron sputtering be 225 nm in the present embodiment; Growth time in step 5) is 6 h in the present embodiment.
embodiment 3:
The ultraviolet detector of the present embodiment is substantially the same manner as Example 1, and difference is: embodiment 1 step 3) does Pt electrode for putting Pt slurry on ZnO film in the present embodiment.
embodiment 4:
The ultraviolet detector of the present embodiment is substantially the same manner as Example 1, and difference is: embodiment 1 step 2) in the ZnO film thickness that deposits of magnetron sputtering be 250 nm in the present embodiment; Growth time in step 5) is 8 h in the present embodiment.

Claims (2)

1. a ZnO nanometer array ultraviolet detector, it is characterized in that: this panel detector structure is metal-semiconductor-metal contact-type, be followed successively by the substrate of ITO or FTO electro-conductive glass from top to bottom, cover described suprabasil ZnO film, be positioned at a termination electrode in described ZnO film centre position, and the ZnO nano array of a described termination electrode surrounding, described substrate is simultaneously other end electrode; Wherein, a described termination electrode is Ag or Pt; The area of one termination electrode is 10% ~ 12% of the substrate gross area.
2. a manufacture method for ZnO nanometer array ultraviolet detector as claimed in claim 1, is characterized in that, specifically comprise the following steps:
Step (1). with ITO or FTO electro-conductive glass for substrate, described substrate carries out ultrasonic cleaning with acetone, ethanol and isopropyl alcohol successively, dries up with nitrogen, for subsequent use;
Step (2). ITO or the FTO electro-conductive glass substrate utilizing magnetron sputtering method to process in above-mentioned steps (1) deposits the ZnO film that a layer thickness is 200 ~ 250 nm, near the middle position of ZnO film, put Ag glue again or put Pt slurry and make a termination electrode and draw wire, place 4 ~ 8 h and make electrode mummification, wherein, the area of a termination electrode is 10% ~ 12% of the substrate gross area;
Step (3). on Ag or Pt mono-termination electrode, cover the polydimethylsiloxane that one deck has prepared, in the baking oven of 60 ~ 70 DEG C, heat 35 ~ 45 min to PDMS electrode protecting layers solidify completely;
Step (4). the substrate of gained after step (3) process is put into container growth 8 ~ 14 h filling growth-promoting media and obtain ZnO nano array, dry by washed with de-ionized water after terminating to grow;
Step (5). wipe the side edge of the sample of gained after step (4) preparation off account for the sample gross area 7% ~ 9% ZnO layer and make ITO or the FTO electro-conductive glass substrate of edge exposed, the electro-conductive glass substrate of exposing is picked out wire as other end electrode, namely obtains ZnO nanometer array ultraviolet detector.
CN201310259647.1A 2013-06-26 2013-06-26 A kind of ZnO nanometer array ultraviolet detector and preparation method thereof CN103441154B (en)

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CN105185797B (en) * 2015-06-10 2017-08-15 宋金会 Digital image sensor
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
CN105140331A (en) * 2015-08-03 2015-12-09 宋金会 Ultraviolet detector
CN105390615B (en) * 2015-11-30 2018-10-23 中国科学技术大学 A kind of ultraviolet light transducer
CN107091874A (en) * 2017-04-06 2017-08-25 上海理工大学 The making and application of semiconductor nano ultraviolet detector and gas sensing integrated device
CN107039558B (en) * 2017-04-26 2018-08-31 北京工业大学 A kind of AlGaN/GaN ultraviolet detectors and preparation method thereof based on oblique ZnO nanowire array modulation
CN108807563A (en) * 2018-05-02 2018-11-13 中国航发北京航空材料研究院 A kind of detector metal nano array electrode and preparation method thereof

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CN102346164A (en) * 2011-07-01 2012-02-08 北京科技大学 Method for constructing uric acid sensor on the basis of super-long zinc oxide nano-wire

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