CN203203859U - Tetrafluoroethylene silicon wafer etching device - Google Patents
Tetrafluoroethylene silicon wafer etching device Download PDFInfo
- Publication number
- CN203203859U CN203203859U CN 201320191654 CN201320191654U CN203203859U CN 203203859 U CN203203859 U CN 203203859U CN 201320191654 CN201320191654 CN 201320191654 CN 201320191654 U CN201320191654 U CN 201320191654U CN 203203859 U CN203203859 U CN 203203859U
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- basket
- height
- etching
- tetrafluoroethylene
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Abstract
The utility model relates to a tetrafluoroethylene silicon wafer etching device which comprises two etching trenches and a sample wafer basket, wherein the etching trenches are of a cuboid structure, the bottom surface and four side faces of each etching trench are sealed, the top surface of each etching trench is open, the sample wafer basket is also of a cuboid structure, a sample placed position of the sample wafer basket is designed into a partition structure, a pair of sample wafers can be vertically placed in each partition space, a partition board in the sample wafer basket is a solid plate, the bottom surface and four side faces of the solid plate are all orifice plates, the hole density is 10000/m<2>, one of the side faces is designed into a handle, and the height of the handle is twice as large as the height of another side face; and the partition board in the sample wafer basket is a tetrafluoroethylene solid plate, and the bottom surface and four side faces of the sample wafer basket are all provided with tetrafluoroethylene orifice plates. The height of the sample wafer basket is lower than the height of the etching trench. Through actual use and validation, the tetrafluoroethylene silicon wafer etching device has the advantages of low loss, long service life and strong operability, and the like.
Description
One, technical field
The utility model relates to a kind of tetrafluoroethene type silicon wafer etching apparatus, is a kind of for chemical corrosion minority carrier lifetime to be detected, the utensil of single, the polycrystalline print of O, C impurity and three or five family's impurity.
Two, background technology
Sun power pulling of crystals, casting polycrystalline, electronics pulling of crystals and zone melting single-crystal will carry out minority carrier lifetime, and O, C impurity and three or five family's impurity detect.Necessity is got a thickness 1-2mm from list, polycrystalline finished product, and size is no more than the print of 3*3cm.Detection necessarily requires surfacing with the print of beginning a project, and inclusion-free pollutes.Reach requirement and must pass through chemical corrosion, flush away surface oxide layer and subsidiary metallic impurity.See with regard to the shape of silicon chip at present, not special-purpose corrosion utensil.
The corrosion utensil requires material to want and corrosion does not react with acid.The quartzy groove that has at present meets not the characteristics with nitric acid and hydrofluorite reaction.But to be cost high and material is smart crisp for its shortcoming, and easily cracked, serviceable life is short.Print after corrosion short time that requires to try one's best is exposed in the air in order to avoid cause oxidation.But because the singularity of print shape will not corroded the utensil that good sample takes out now specially, so just strengthened the difficulty of taking out sample.So characteristics per sample, the special implement of design one cover sample corrosion is very necessary.
Three, the content of utility model
The purpose of this utility model provides a kind of tetrafluoroethene silicon rod, type silicon wafer etching apparatus, and its cost is low, and material hardness is large, and long service life is workable.
The purpose of this utility model is achieved like this: a kind of tetrafluoroethene type silicon wafer etching apparatus, it comprises: 2 etching tanks and 1 print basket form, etching tank is rectangular structure, bottom surface and four side seals, and the above opens wide, the print basket also is rectangular structure, the sample placement location of print basket is designed to partition-type structures, and each cuts off space can allow vertical the putting into of a pair of print, and the partition panel in the print basket is real plate, the bottom surface is into orifice plate with four sides, 10000/m of hole density with face
2, one of them lateral layout becomes handle, and its handle height is the twice of another side height; Partition panel in the described print basket is the real plate of tetrafluoroethene material, and the bottom surface of print basket and four sides are tetrafluoroethene material orifice plate.The height of print basket is lower than the height of etching tank.
The utility model uses checking through reality, and it has low-loss, long service life, the advantage such as workable.
Four, description of drawings
Accompanying drawing 1 is the structural representation of the utility model etching tank.
Accompanying drawing 2 is the structural representation of the utility model print basket.
Wherein: 1----etching tank, 2----print basket, 3----orifice plate, the real plate of 4----.
Five, embodiment
Come the utility model is described in further detail below in conjunction with drawings and Examples:
With reference to accompanying drawing, the utility model tetrafluoroethene type silicon wafer etching apparatus, it comprises: two etching tanks 1 and a print basket 2 form, and two 1, one of etching tanks are used for chemical corrosion, and the high purity water after another is used for corroding cleans.Etching tank 1 is rectangular structure, bottom surface and four side seals, the above opens wide, print basket 2 also is rectangular structure, it is used for corroding good print and puts into high purity water cleaning etching tank from the taking-up of chemical corrosion etching tank again, again high purity water is cleaned the silicon chip extracting after finishing, the sample placement location of print basket 2 is designed to a plurality of partition-type structures, each cuts off space can allow vertical the putting into of a pair of print, partition panel in the print basket 2 is real plate 4, the bottom surface is into orifice plate 3 with four sides, 10000/M of hole density
2, one of them lateral layout becomes handle, and its handle height is the twice of another side height.Partition panel in the described print basket 2 is the real plate 4 of tetrafluoroethene material, and the bottom surface of print basket 2 and four sides are tetrafluoroethene material orifice plate 3.Described tetrafluoroethene type silicon wafer etching apparatus, the height of print basket 2 is lower than the height of etching tank.
Will add acid mixture in the chemical corrosion etching tank when corroding operation, high purity water cleans in the etching tank and adds high purity water.Print to be corroded is put into print basket 2, catch again handle that its whole etching tank 1 that adds acid mixture of putting into is corroded operation.Catching handle that its whole proposition acid mixture is put into high purity water cleaning etching tank again after etching cleans again.The liquid of whole process all bleeds by orifice plate 3 structures of print basket or spills.
Claims (3)
1. tetrafluoroethene type silicon wafer etching apparatus, it comprises: two etching tanks (1) and a print basket (2) form, it is characterized in that: etching tank (1) is rectangular structure, bottom surface and four side seals, the above opens wide, print basket (2) also is rectangular structure, the sample placement location of print basket (2) is made as a plurality of partition-type structures, each cuts off space can allow vertical the putting into of a pair of print, partition panel in the print basket (2) is real plate, the bottom surface is into orifice plate with four sides, 10000/m of hole density
2, one of them lateral layout becomes handle, and its handle height is the twice of another side height.
2. tetrafluoroethene type silicon wafer etching apparatus as claimed in claim 1 is characterized in that: the partition panel in the print basket (2) is the real plate of tetrafluoroethene material, and the bottom surface of print basket (2) and four sides are tetrafluoroethene material orifice plate.
3. tetrafluoroethene type silicon wafer etching apparatus as claimed in claim 1, it is characterized in that: the height of print basket (2) is lower than the height of etching tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320191654 CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320191654 CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203203859U true CN203203859U (en) | 2013-09-18 |
Family
ID=49147958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320191654 Expired - Fee Related CN203203859U (en) | 2013-04-03 | 2013-04-03 | Tetrafluoroethylene silicon wafer etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203203859U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793986A (en) * | 2019-10-14 | 2020-02-14 | 中国电子科技集团公司第十一研究所 | Method for testing depth of damage layer of InSb wafer |
-
2013
- 2013-04-03 CN CN 201320191654 patent/CN203203859U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793986A (en) * | 2019-10-14 | 2020-02-14 | 中国电子科技集团公司第十一研究所 | Method for testing depth of damage layer of InSb wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20200403 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |