CN203178154U - Device for measuring PLD (Pulsed Laser Deposition) membrane stoichiometric ratio and mass of each component on line - Google Patents
Device for measuring PLD (Pulsed Laser Deposition) membrane stoichiometric ratio and mass of each component on line Download PDFInfo
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- CN203178154U CN203178154U CN 201320161843 CN201320161843U CN203178154U CN 203178154 U CN203178154 U CN 203178154U CN 201320161843 CN201320161843 CN 201320161843 CN 201320161843 U CN201320161843 U CN 201320161843U CN 203178154 U CN203178154 U CN 203178154U
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- 238000004549 pulsed laser deposition Methods 0.000 title claims abstract description 30
- 239000012528 membrane Substances 0.000 title abstract description 5
- 238000002536 laser-induced breakdown spectroscopy Methods 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000005259 measurement Methods 0.000 claims abstract description 24
- 238000003380 quartz crystal microbalance Methods 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims description 97
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 97
- 239000013078 crystal Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 22
- 239000013307 optical fiber Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 18
- 239000000835 fiber Substances 0.000 claims description 14
- 238000001228 spectrum Methods 0.000 claims description 14
- 238000007405 data analysis Methods 0.000 claims description 6
- 238000012806 monitoring device Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 17
- 238000000691 measurement method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 64
- 239000000463 material Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000001675 atomic spectrum Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000010223 real-time analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The utility model relates to the field of pulsed laser deposition coating and discloses a device for measuring PLD (Pulsed Laser Deposition) membrane stoichiometric ratio and the mass of each component on line. The device comprises a PLD coating system, a laser-induced breakdown spectroscopy (LIBS) measurement system and a quartz crystal microbalance (QCM). Based on the pulsed laser deposition coating technique, the laser-induced breakdown spectroscopy technique and the quartz crystal microbalance membrane thickness measurement technique, the device disclosed by the utility model can realize real-time original-position on-line measurement of stoichiometric ratio of the pulsed laser deposition coated membrane and the mass of each component without causing interference to the coating process, also is simple to build and easy to operate, and is suitable for the field of pulsed laser deposition coating.
Description
Technical Field
The utility model relates to a pulsed laser deposition coating film field, in particular to device of on-line measurement PLD film stoichiometric ratio and each composition quality.
Background
The Pulsed Laser Deposition (PLD) process for preparing film includes focusing one beam of pulsed laser and projecting the laser onto the target material, instantaneous ablation of the laser components in the irradiated area, and subsequent transmission of the ablated matter along the normal direction of the target to form plasma plume on the surface of the target material. The ablates are transported towards the substrate in the space, and are condensed, nucleated and grown on the surface of the substrate, and finally the required thin film is obtained. The chamber may be filled with a gas at a pressure throughout the growth process, such as a volume of oxygen gas typically used to deposit oxides. The duration of the various stages of the PLD process varies from picoseconds to microseconds. One of the main advantages of PLD is that the stoichiometry of the film is substantially identical to the target material. However, there are a number of factors that can have an effect on the stoichiometry of the film, such as: the type of the environmental gas, the pressure intensity, the laser pulse energy, the surface condition of the target material, the ablation characteristic and the like. These make the transfer of the target to the film stoichiometric more complicated and do not guarantee that the film will grow according to the stoichiometric ratio.
Therefore, the determination of the stoichiometric ratio of the film to form a high-quality film is of great significance. The stoichiometric ratio of the components of the film is measured by adopting a laser-induced breakdown spectroscopy method, the total deposition amount and the thickness of the film are measured by using a quartz crystal microbalance, and the results of the two are combined to obtain the content of each component in the film.
Laser-induced breakdown spectroscopy (LIBS) can be used to perform qualitative and quantitative elemental analysis on samples of unknown composition, and can be used to determine the chemical composition of substances produced by Laser ablation. When a high-energy pulse laser beam is focused on the surface of the target, the target is extremely preheated by a small volume, so that transient plasma is generated above an irradiated area. The intensity of the light emitted by the plasma plume depends on the type and content of the sputtered elements, and the emitted spectrum is analyzed by a spectrometer, so that a qualitative or quantitative analysis result can be obtained. The LIBS can simultaneously analyze a plurality of elements in situ, and rapidly measure the sputtered substances (i.e. substances to be formed into films) in real time to obtain the percentage of the content of the sputtered substances.
There are several methods for analyzing LIBS data. The free calibration method does not need to obtain a calibration curve by carrying out experimental measurement on a standard sample, but directly calculates the concentration of an analysis component according to the relative intensity of the obtained spectral line. The method has the advantages of no need of calibration objects, simplified procedure and lower cost; measuring all elements; and the remote online real-time analysis is really realized. The self-absorption effect is not considered, and the measuring result is influenced; all spectral lines need to be analyzed, and the workload is relatively large.
Quartz Crystal Microbalance (QCM or QMB) uses a Quartz Crystal as a transducer element and utilizes two effects of the Quartz Crystal, namely a piezoelectric effect and a mass load effect. The film thickness and the deposition rate are monitored by detecting the change of the natural frequency of the quartz crystal, and the measurement precision can reach the nanogram magnitude. The QCM has the advantages of simple structure, low cost, high resolution, high sensitivity, good specificity, real-time online monitoring and the like, and is widely applied to various fields of physics, biology, chemistry, medicine and the like. QCM is used to monitor the growth of thin films with well defined spatial and temporal resolution. It can provide valuable data on material acquisition and loss in areas of low heat flux.
Disclosure of Invention
The utility model aims at: in order to solve the technical problem among the prior art, provide a device of on-line measurement PLD film stoichiometric ratio and each composition quality, the utility model discloses survey the membrane thickness technique based on pulse laser deposition coating film technique, laser-induced breakdown spectroscopy technique, quartz crystal microbalance, can real-time normal position on-line measurement pulse laser deposition coating film stoichiometric ratio and each composition quality, and can not have the interference to the coating film process to it is simple to build, easily operates.
In order to achieve the above purpose, the utility model adopts the technical scheme that: provided is a device for on-line measuring the stoichiometric ratio and the mass of each component of a PLD film, comprising: the device comprises a pulse deposition coating system (PLD), a Laser Induced Breakdown Spectroscopy (LIBS) measuring system, a Quartz Crystal Microbalance (QCM) measuring system and a data analysis system.
The pulsed laser deposition coating (PLD) system is used for depositing a thin film with a specific function on a substrate, and comprises: a vacuum chamber 1, a pulse laser 4, a rotatable target table 6, a target 7, a rotatable substrate table 8, a substrate 9 and a first focusing lens 10; the outer wall of the vacuum chamber 1 is provided with a vacuum pump set 11, a vacuum gauge 14, an air inlet 16 and a first quartz window 12, and the vacuum pump set is used for forming an environmental gas condition required by coating; the target 7 and the substrate 9 are respectively placed on a rotatable target table 6 and a rotatable substrate table 8 in the vacuum chamber 1; the first focusing lens 10 is arranged in the vacuum chamber 1 and corresponds to a first quartz window 12 of the vacuum chamber 1; the pulse laser 4 is located outside the vacuum chamber 1.
The pulse laser 4 emits pulse laser, enters the vacuum chamber 1 through the first quartz window 12, is focused on the surface of the target 7 through the first focusing lens 10 and is used as an energy source for ablating and sputtering the target; a substrate 9 placed on the rotatable substrate table 8 as a substrate for growing a thin film; a target 9, placed on a rotatable target table 8, serves as a source of thin film material.
The Laser Induced Breakdown Spectroscopy (LIBS) measurement system is used for forming and storing a LIBS spectrum of a laser sputtering target plasma plume, and comprises: the fiber spectrometer 2, the second focusing lens 19 and the optical fiber 15; the second focusing lens 19 is placed in the vacuum chamber 1 and corresponds to a second quartz window 20 of the vacuum chamber 1; the fiber optic spectrometer 2 collects LIBS spectra through an optical fiber 13.
The pulse laser device sends out 4 pulse laser, enters the vacuum chamber 1 through the first quartz window 12, and is focused on the surface of the target material through the first focusing lens 10 to form plasma plume; the second focusing lens 19 is used for focusing the light emitted by the plasma plume 13 on the receiving surface of the optical fiber 15; the optical fiber 15 is used for transmitting LIBS spectrum; the fiber optic spectrometer 2 is used to collect LIBS spectra.
The Quartz Crystal Microbalance (QCM) measurement system is used for measuring film thickness information, includes: the quartz crystal film thickness monitor 3, the oscillator 5, the quartz crystal sensor 17 and the quartz crystal 21; the quartz crystal 21 is fixed on the quartz crystal sensor 17 and is placed in the vacuum chamber 1; the quartz crystal sensor 17, the oscillator 5 and the quartz crystal film thickness monitor 3 are connected through BNC cables in sequence.
The quartz crystal 21 is used for depositing a film, the quartz crystal sensor 17 is used for transmitting current to the quartz crystal 21 from the oscillator 5, enabling the quartz crystal 21 to vibrate at a high speed, and transmitting an electric signal generated by the quartz crystal 21 to the oscillator 5; the oscillator 5 sends an electronic signal to the quartz crystal film thickness monitor 3; the quartz crystal film thickness monitor 3 is used for controlling the quartz crystal sensor 17 and recording the change of the film thickness; the performance of the quartz crystal 21 is reduced by high temperature and high thermal load, and in order to maintain the service life of the quartz crystal 21, when the measurement is not needed, the baffle of the quartz crystal sensor 9 is closed, and the quartz crystal 21 is spaced from the material to be measured.
The data analysis system, i.e., computer 18; the computer 18 is respectively connected with the light spectrometer 2, the quartz crystal film thickness monitor 3 and the pulse laser 4 through circuits; the LIBS signal is used for adjusting the time sequence of the pulse laser 4 and the optical fiber spectrometer 2, storing and analyzing the LIBS signal transmitted by the optical fiber spectrometer and obtaining various components generated by laser ablation of the target 7, namely film components and percentage information; the thickness monitor is also used for obtaining the thickness information of the formed film transmitted by the quartz crystal film thickness monitor 3; finally, the measurement results of the two are combined to obtain the stoichiometric ratio and the mass of each component of the pulse laser deposition coating film. The timing sequence of the pulse laser 4 and the fiber spectrometer 2 has a great influence on the intensity of the LIBS signal, and the value needs to be debugged for many times in order to obtain the optimal signal-to-noise ratio.
Wherein, the first quartz window 12, the second quartz window 20, the vacuum gauge 14, the vacuum pump set 11 and the gas inlet 16 are arranged on the flange of the vacuum chamber 1.
The utility model has the advantages that: the utility model can measure the stoichiometric ratio and the quality of each component of the pulse laser deposition coating film on line in real time in situ based on the pulse laser deposition coating technology, the laser-induced breakdown spectroscopy technology and the quartz crystal microbalance film thickness measuring technology, and has no interference to the coating process, simple construction and easy operation; is suitable for the field of pulse laser deposition coating.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for on-line measurement of the stoichiometric ratio and the mass of each component of a PLD film according to the present invention.
The attached drawings are as follows: 1-vacuum chamber, 2-fiber spectrometer, 3-quartz crystal film thickness monitor, 4-pulse laser, 5-oscillator, 6-rotatable target table, 7-target material, 8-rotatable substrate table, 9-substrate, 10-first focusing lens, 11-vacuum pump set, 12-first quartz window, 13-plasma plume, 14-vacuum gauge, 15-optical fiber, 16-air inlet, 17-quartz crystal sensor, 18-computer, 19-second focusing lens, 20-second quartz window, 21-quartz crystal.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples.
Referring to fig. 1, the utility model relates to a device of on-line measurement PLD film stoichiometric ratio and each composition quality includes: the device comprises a pulse deposition coating system (PLD), a Laser Induced Breakdown Spectroscopy (LIBS) measuring system, a Quartz Crystal Microbalance (QCM) measuring system and a data analysis system.
The pulsed laser deposition coating (PLD) system is used for depositing a thin film with a specific function on a substrate, and comprises: a vacuum chamber 1, a pulse laser 4, a rotatable target table 6, a target 7, a rotatable substrate table 8, a substrate 9 and a first focusing lens 10; the outer wall of the vacuum chamber 1 is provided with a vacuum pump set 11, a vacuum gauge 14, an air inlet 16 and a first quartz window 12 for forming an environmental gas condition required by coating, the vacuum pump set 11 pumps the vacuum chamber 1 to a vacuum state and maintains the stability of the vacuum state in the experimental process; the target 7 and the substrate 9 are respectively placed on a rotatable target table 6 and a rotatable substrate table 8 in the vacuum chamber 1; the first focusing lens 10 is arranged in the vacuum chamber 1 and corresponds to a first quartz window 12 of the vacuum chamber 1; the pulse laser 4 is located outside the vacuum chamber 1.
The pulse laser 4 emits pulse laser, enters the vacuum chamber 1 through the first quartz window 12, is focused on the surface of the target 7 through the first focusing lens 10 and is used as an energy source for ablating and sputtering the target; a substrate 9 placed on the rotatable substrate table 8 as a substrate for growing a thin film; a target 9, placed on a rotatable target table 8, serves as a source of thin film material.
The Laser Induced Breakdown Spectroscopy (LIBS) measurement system is used for forming and storing a LIBS spectrum of a laser sputtering target plasma plume, and comprises: the fiber spectrometer 2, the second focusing lens 19 and the optical fiber 15; the second focusing lens 19 is placed in the vacuum chamber 1 and corresponds to a second quartz window 20 of the vacuum chamber 1; the fiber optic spectrometer 2 collects LIBS spectra through an optical fiber 13.
The pulse laser device sends out 4 pulse laser, enters the vacuum chamber 1 through the first quartz window 12, and is focused on the surface of the target material through the first focusing lens 10 to form plasma plume; the second focusing lens 19 is used for focusing the light emitted by the plasma plume 13 on the receiving surface of the optical fiber 15; the optical fiber 15 is used for transmitting LIBS spectrum; the fiber optic spectrometer 2 is used to collect LIBS spectra.
The Quartz Crystal Microbalance (QCM) measurement system is used for measuring film thickness information, includes: the quartz crystal film thickness monitor 3, the oscillator 5, the quartz crystal sensor 17 and the quartz crystal 21; the quartz crystal 21 is fixed on the quartz crystal sensor 17 and is placed in the vacuum chamber 1; the quartz crystal sensor 17, the oscillator 5 and the quartz crystal film thickness monitor 3 are connected through BNC cables in sequence.
The quartz crystal 21 is used for depositing a film, the quartz crystal sensor 17 is used for transmitting current to the quartz crystal 21 from the oscillator 5, enabling the quartz crystal 21 to vibrate at a high speed, and transmitting an electric signal generated by the quartz crystal 21 to the oscillator 5; the oscillator 5 sends an electronic signal to the quartz crystal film thickness monitor 3; the quartz crystal film thickness monitor 3 is used for controlling the quartz crystal sensor 17 and recording the change of the film thickness; the performance of the quartz crystal 21 is reduced by high temperature and high thermal load, and in order to maintain the service life of the quartz crystal 21, when the measurement is not needed, the baffle of the quartz crystal sensor 9 is closed, and the quartz crystal 21 is spaced from the material to be measured.
The data analysis system, i.e., computer 18; the computer is respectively connected with the light spectrometer, the quartz crystal film thickness monitor 3 and the pulse laser 4 through circuits; the LIBS signal is used for adjusting the time sequence of the pulse laser 4 and the optical fiber spectrometer 2, storing and analyzing the LIBS signal transmitted by the optical fiber spectrometer and obtaining various components generated by laser ablation of the target 7, namely film components and percentage information; the thickness monitor is also used for obtaining the thickness information of the formed film transmitted by the quartz crystal film thickness monitor 3; finally, the measurement results of the two are combined to obtain the stoichiometric ratio and the mass of each component of the pulse laser deposition coating film. The timing sequence of the pulse laser 4 and the fiber spectrometer 2 has a great influence on the intensity of the LIBS signal, and the value needs to be debugged for many times in order to obtain the optimal signal-to-noise ratio.
Wherein, the first quartz window 12, the second quartz window 20, the vacuum gauge 14, the vacuum pump set 11 and the gas inlet 16 are arranged on the flange of the vacuum chamber 1.
The fiber spectrometer 2 (taking LIBS2500+ of ocean optics corporation of America as an example) can collect the spectrum range of 200 and 980 nm, the resolution is 0.1 nm (FWHM), the CCD with 14,336 pixels is detected, and the frame rate is controlled by a computer to be 10 Hz; the trigger delay is-121 us to +135us in 500ns, controlled by OOILIBS software, for LIBS spectra acquisition, enabling real-time qualitative measurements with ppb and picogram sensitivity. The optical fiber 15 transmits the collected light to the fiber optic spectrometer, and the computer 18 controls the operating state of the fiber optic spectrometer 2, stores and analyzes the resulting spectral information.
The quartz crystal film thickness monitor 3 (SQM 160, INFICON) measures the rate and film thickness during the film deposition process using the quartz crystal sensor technology, the frequency resolution at 10 readings/second is 0.03Hz, and the temperature stability is 2 ppm over the entire operating range. The quartz crystal 21 is placed on the quartz crystal sensor 9 with a baffle for collecting the laser sputtered material.
The pulse laser 4 (taking a Brilliant Eazy model Nd: YAG nanosecond pulse laser of French Quantel company as an example) can provide high-energy nanosecond pulse laser with three wavelengths of 1064nm, 532nm and 355nm as laser sources of laser pulse laser deposition films and LIBS.
The utility model discloses the measurement process includes following step:
step 1: the target 7, the substrate 9 and the ambient gas are selected as required by the coating.
Step 2: the target 7 is placed on a rotatable target table 6 and the substrate 9 is placed on a rotatable substrate table 8.
And step 3: the positions of the rotatable target platform 6, the rotatable substrate platform 8, the first focusing lens 10 and the second focusing lens 19 are adjusted to enable the target 7 to face the substrate 9, the quartz crystal 21 and the target 7 to form an angle of 45 degrees, the optical fiber 15 is parallel to the target 7, the position of the collected spectrum is 71-2 mm away from the target, the target 7 is located at the focus of the focusing lens, and the optical fiber 15 is located at the focus of the second focusing lens 19.
And 4, step 4: the vacuum pump unit 11 is used to pump the vacuum chamber 1 to vacuum state, and then the vacuum gauge 14 is used to measure the vacuum degreeTo an air pressure of less than 10-3mbar; corresponding gas is filled from the gas inlet 16 according to the coating requirement.
And 5: according to the requirement of the coating thickness, the computer 18 sets the laser pulse number through the self-contained control software of the optical fiber spectrometer 2, adjusts the Q delay time of the laser, sets the time sequence of the pulse laser 4 and the optical fiber spectrometer 2, starts coating and collects the LIBS spectrum.
Step 6: and at the same time of starting the pulse laser 4, the computer 18 displays and records the change of the resonance frequency of the quartz crystal 21 along with the deposition coating time of the pulse laser in real time.
And 7: analyzing LIBS signals by a free scaling method, and calculating the stoichiometric ratio of each component in the film;
the measured characteristic line intensity of the particle can be expressed as:
wherein,for the measured spectral line intensity, k and i are respectively the high and low energy levels of the electronic transition corresponding to the characteristic wavelength, and lambda is the wavelength of the characteristic spectral line selected and analyzed; f is the test parameter, CSThe atom content corresponding to the selected emission line; gkFor high degree of degeneracy, AkiThe transition probability of k level to i level, EkAt a high energy level, kBIs Boltzmann constant, T is plasma temperature, US(T) is a partition function. Ek,gkAnd AkiCan be searched from an atomic spectrum standard and technology database NIST; F. t anddetermining through an experimental result;
definition x = Ek,,,Then y = mx + qs. And (x, y) drawing a relation curve, fitting by using a least square method, and obtaining a slope which reflects the plasma temperature and an intercept which reflects the concentration of the substance to be analyzed.
the free scaling method is based on the following assumptions:
(l) The composition of atoms in the laser plasma is considered to truly reflect the material composition of an analysis object;
(2) the laser plasma is considered to be in a local thermal equilibrium state;
(3) the laser plasma is considered to be an optically thin plasma, without considering the self-absorption effect of the plasma.
And 8: analyzing the change of the resonance frequency of the quartz crystal 21 and calculating the total deposition amount;
the natural resonant frequency f of the piezoelectric effect of the AT-cut quartz chip is as follows:(1)
wherein n is the harmonic number, n =1, 3, 5, … …; dQIs the thickness of the quartz crystal, and c is the shear modulus of elasticity; ρ is the density of the quartz crystal (2.65 × 10)3kg/m3);
For the commonly used fundamental wave (n =1), the formula (1) can be divided into &
Wherein,(AT cut), referred to as the frequency constant of the crystal; dQIs the thickness of the crystal.
The formula (2) is divided into the following components:the physical meaning of the above formula is that if the thickness is dQIncreased thickness deltad of quartz crystalQThe vibration frequency of the crystal changes by Δ f, and the minus sign in the formula indicates that the frequency of the crystal decreases as the film thickness increases. The thickness of the quartz crystal is increased by delta d assuming that the deposited film does not change the oscillation mode of the quartz crystalQExpressed as film thickness increment delta d by mass conversionm. Then:
the deposited film layer actually changes the vibration mode of the quartz itself from the vibration mode of a single material to the mixed vibration mode of two materials; considering that the quartz crystal becomes mixed vibration mode after being deposited by a film layer, the following formula for calculating the film thickness is derived:
wherein A isfIs the film thickness, in angstroms (a); n is a radical ofqAT cut Crystal frequency constant, 1.668X 1013Hertz (Hz.. A); dqThe density of the quartz is 2.648g/cm3(ii) a Pi is a constant, 3.1415926; dfIs the density of the film material in g/cm3(ii) a Z is the coefficient of Z of the material,,Zmacoustic impedance of deposited film in g cm2·s),ZqAcoustic impedance (unit g cm) of quartz crystal2·s);FqIs the resonance frequency of the quartz crystal; fcCrystal frequency after deposition of material.
And step 9: combining the LIBS result and the QCM result to obtain the mass of each component in the film;
assuming that n substances are generated after laser ablation of a sample, the concentration (relative concentration) of the ith substance measured by LIBS is Csi(ii) a QCM measures crystal frequency after deposition of materialThen the total ablation amount M is:
The above description is further detailed in connection with the preferred embodiments of the present invention, and it is not intended to limit the practice of the invention to these descriptions. It will be apparent to those skilled in the art that various modifications, additions, substitutions, and the like can be made without departing from the spirit of the invention.
Claims (2)
1. The device for on-line measuring the stoichiometric ratio and the mass of each component of the PLD film is characterized in that the device for on-line measuring the stoichiometric ratio and the mass of each component of the pulse laser deposition film comprises: the system comprises a pulse deposition coating system, a laser-induced breakdown spectroscopy measurement system, a quartz crystal microbalance measurement system and a data analysis system;
the pulsed laser deposition coating system comprises: the device comprises a vacuum chamber (1), a pulse laser (4), a rotatable target table (6), a target (7), a rotatable substrate table (8), a substrate (9) and a first focusing lens (10); a vacuum pump set (11), a vacuum gauge (14), an air inlet (16) and a first quartz window (12) are arranged on the outer wall of the vacuum chamber (1); the target (7) and the substrate (9) are respectively placed on a rotatable target table (6) and a rotatable substrate table (8) in the vacuum chamber (1); the first focusing lens (10) is arranged in the vacuum chamber (1) and corresponds to a first quartz window (12) of the vacuum chamber (1); the pulse laser (4) is positioned outside the vacuum chamber (1);
the laser-induced breakdown spectroscopy measurement system includes: the device comprises a fiber spectrometer (2), a second focusing lens (19) and an optical fiber (15); the second focusing lens (19) is arranged in the vacuum chamber (1) and corresponds to a second quartz window (20) of the vacuum chamber (1); the fiber spectrometer (2) collects LIBS spectrum through an optical fiber (13);
the Quartz Crystal Microbalance (QCM) measurement system includes: the quartz crystal film thickness monitoring device comprises a quartz crystal film thickness monitor (3), an oscillator (5), a quartz crystal sensor (17) and a quartz crystal (21); the quartz crystal (21) is fixed on the quartz crystal sensor (17) and is placed in the vacuum chamber (1); the quartz crystal sensor (17), the oscillator (5) and the quartz crystal film thickness monitor (3) are sequentially connected through a BNC cable;
the data analysis system is a computer (18); and the computer (18) is respectively connected with the optical fiber spectrometer (2), the quartz crystal film thickness monitor (3) and the pulse laser (4) through circuits.
2. The device for on-line measurement of the stoichiometric ratio and the mass of each component of PLD film according to claim 1, wherein the first quartz window (12), the second quartz window (20), the vacuum gauge (14), the vacuum pump set (11), and the gas inlet (16) are mounted on a flange of the vacuum chamber (1).
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103196773A (en) * | 2013-04-03 | 2013-07-10 | 大连理工大学 | Device for online measuring stoichiometric proportions and ingredient masses of PLD (Pulsed Laser deposition) film |
CN107402193A (en) * | 2017-07-25 | 2017-11-28 | 华中科技大学 | A kind of selective laser fusing forming process online detection instrument based on LIBS |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103196773A (en) * | 2013-04-03 | 2013-07-10 | 大连理工大学 | Device for online measuring stoichiometric proportions and ingredient masses of PLD (Pulsed Laser deposition) film |
CN107402193A (en) * | 2017-07-25 | 2017-11-28 | 华中科技大学 | A kind of selective laser fusing forming process online detection instrument based on LIBS |
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