CN203176744U - Electronic gun excitation ultraviolet electroluminescent system - Google Patents
Electronic gun excitation ultraviolet electroluminescent system Download PDFInfo
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- CN203176744U CN203176744U CN 201220712215 CN201220712215U CN203176744U CN 203176744 U CN203176744 U CN 203176744U CN 201220712215 CN201220712215 CN 201220712215 CN 201220712215 U CN201220712215 U CN 201220712215U CN 203176744 U CN203176744 U CN 203176744U
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Abstract
The utility model relates to the field of light sources, in particular to the field of electroluminescence. An electronic gun excitation ultraviolet electroluminescence system comprises an electroluminescence semiconductor mechanism, and further comprises an excitation source. According to the excitation source, an electronic gun system is adopted. The electroluminescence semiconductor mechanism is arranged in the target direction of the electronic gun system. The electroluminescence conductor mechanism is connected with an electrode. The electronic gun excitation ultraviolet electroluminescence system is further provided with a light emitting port used for transmitting ultraviolet. According to the electronic gun excitation ultraviolet electroluminescence system, the size of equipment is reduced, power dissipation is reduced, and purity of ultraviolet light in a specific waveband is improved. The electronic gun excitation ultraviolet electroluminescence system provides currents for the electroluminescence semiconductor mechanism through electronic beams, and a current circuit is formed through the electrode.
Description
Technical field
The present invention relates to light source field, be specifically related to the electroluminescent field.
Background technology
Ultraviolet wavelength is shorter than visible light, but the electromagnetic radiation longer than X ray.Ultraviolet light range of wavelength in electromagnetic spectrum is 10-400nm.Start from the shortwave limit of visible light in this scope, and with the wavelength overlaid of long wave X ray.Ultraviolet light is divided into A ray, beta radiation and C ray (being called for short UVA, UVB and UVC), and wave-length coverage is respectively 400-315nm, 315-280nm, 280-190nm.
At present, Shi Yong luminous mechanism mainly is two classes: a class is to be traditional gas lamp of luminous mechanism with gas electricity aura; Another kind of is that a solid luminescence diode (LED) is main solid light source.These two kinds of light sources have very obvious defects.Traditional gas lamp conversion efficiency is poor, has a large amount of mixed and disorderly parts in the spectrum, is not good monochromatic light, and sizable energy dissipation is arranged.In addition, traditional gas lamp also has problem of environment pollution caused.Solid state light emitter based on solid luminescent diode (LED) is compared with traditional gas lamp, and improvement has been arranged in some aspects, but it still has conversion efficiency low, the low defective that waits of light intensity.
The utility model content
The purpose of this utility model is, provides a kind of electron gun to excite electricity to cause the ultra-violet light-emitting system, solves above technical problem.
The technical problem that the utility model solves can realize by the following technical solutions:
Electron gun excites electricity to cause the ultra-violet light-emitting system, and described electron gun excites electricity to cause the ultra-violet light-emitting system to comprise an electroluminescent semiconductor mechanism, also comprise a driving source, it is characterized in that described driving source adopts an electron gun system;
Described electroluminescent semiconductor mechanism is arranged on the target direction of described electron gun system, and described electroluminescent semiconductor mechanism connects an electrode;
Described electron gun excites electricity to cause the ultra-violet light-emitting system and also is provided with one for transmiting ultraviolet optical emission exit.
Electron gun excites electricity to cause the ultra-violet light-emitting system, reduced equipment volume, reduces power consumption and improved the purity of specific band ultraviolet light.Electron gun excites electricity to cause the ultra-violet light-emitting system and provides electric current by electron beam for electroluminescent semiconductor mechanism, and forms current loop by described electrode.
Described electroluminescent semiconductor mechanism is created on the reflective metal layer, and described reflective metal layer connects described electrode.The ultraviolet light that sends penetrates from optical emission exit through the reflection back.
Perhaps, described electroluminescent semiconductor mechanism is created on the conductive, transparent substrate, and described conductive, transparent substrate is connected described electrode.After the described conductive, transparent substrate of the ultraviolet ray process transmission of sending, penetrate from described optical emission exit.
Described electroluminescent semiconductor mechanism comprises the electroluminescent semiconductor layer of two-layer laminate at least, constitutes semiconductor light emitting structure.
The material of these electroluminescent semiconductor layers can be the lattice coupling, also can be that lattice is unmatched.These electroluminescent semiconductor layers can have strain, also can not have strain.
Adjacent two-layer described electroluminescent semiconductor layer is the different electroluminescent semiconductor layer of energy gap, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material of forming.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Described semiconductor light emitting structure comprises the described electroluminescent semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described electroluminescent semiconductor layer, adjacent two-layer described electroluminescent semiconductor layer is the described electroluminescent semiconductor layer of unlike material.
Concrete can for: described semiconductor light emitting structure comprises the described electroluminescent semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described electroluminescent semiconductor layer, adjacent two-layer described electroluminescent semiconductor layer is the described electroluminescent semiconductor layer of unlike material, that is, the described electroluminescent semiconductor layer of two kinds of materials is alternately arranged and is constituted stacked structure.
The thickness of every layer of described electroluminescent semiconductor layer in 1 nanometer to 50 nanometers.
At least the described semiconductor light emitting structure of the two-layer stacked formation of described electroluminescent semiconductor layer, the thickness of described semiconductor light emitting structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.
Described electroluminescent semiconductor mechanism is followed successively by first limiting layer, two-layer at least described electroluminescent semiconductor layer, second limiting layer, and reflective metal layer, and described reflective metal layer is provided with reflector layer; The reflection direction of described reflector layer is towards described optical emission exit; Described first limiting layer is towards the electron gun direction.The optical emission exit that light passes printing opacity is transmitted into the external world.
Described electroluminescent semiconductor mechanism is semiconductor Ultra-Violet Laser resonator, is provided with semiconductor structure in the described semiconductor Ultra-Violet Laser resonator, and described semiconductor structure is created on the substrate, and described substrate is provided with high bandgap semiconductor layer.
Select the different semiconductor layer of energy gap, form the potential energy well structure thereby form on the band structure of new structure.These potential energy well structures are conducive to retrain carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Described semiconductor structure comprises the described high bandgap semiconductor layer of at least two kinds of unlike materials, and comprises at least three layers of described high bandgap semiconductor layer, and adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material.
Concrete can for: described semiconductor structure comprises the described high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material, that is, the described high bandgap semiconductor layer of two kinds of materials is alternately arranged and is constituted stacked structure.
The thickness of every layer of described high bandgap semiconductor layer in 1 nanometer to 50 nanometers.
At least two-layer described high bandgap semiconductor is the described semiconductor structure of folded formation layer by layer, and the thickness of described semiconductor structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.
The high bandgap semiconductor layer that comprises two-layer at least III-V family semiconductor material in the described semiconductor structure.Concrete III-V family semiconductor material can be nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.
The high bandgap semiconductor layer that comprises one deck II-VI family semiconductor material in the described semiconductor structure.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.
Semiconductor material can be the lattice coupling, also can be that lattice is unmatched.High bandgap semiconductor layer can have strain, also can not have strain.In order to improve conversion efficiency and regulation and control Wavelength of Laser.
Be provided with high reflection mirror at described semiconductor structure one end, the other end is provided with a low speculum, and the described low speculum outside also is provided with a transparent substrate.With one in high reflection mirror, the low speculum as described substrate.
Described electron gun system comprises a vacuum chamber, is placed with electron gun, electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism, electroluminescent semiconductor mechanism, optical emission exit from described vacuum chamber one end successively to the other end.
Described optical emission exit is positioned at described vacuum chamber side, and the reflection direction of described reflective metal layer is towards described optical emission exit.So that beam projecting.
The electron beam that described electron gun sends passes through electricity controlling organization, electromagnetic focusing mechanism, electromagnetic deflection sweep mechanism successively, forms the high-power electron beam present scanning mode, squeezes into described electroluminescent semiconductor mechanism, for the light emission provides energy.
The electron beam that described electron gun sends also can be operated in pulse emission state or continuous emission state.Choosing of these duties is to decide according to the performance of luminescent material and the concrete application of luminous tube.
The energy that high-power electron beam carries can make it pass the semiconductor light emitting structure that produces light as the surface of the electroluminescent semiconductor mechanism of target to Danone.High-power electron beam can pass to bound electron in the semiconductor material to energy, and electronics freely--the hole is right thereby produce.Under the more complete situation of semiconductor material structure, the free electron that produces like this--hole is to compound and produce photon.
Described electron gun is provided with the negative electrode of emission electronics, and described negative electrode can be the negative electrode that materials such as metal, oxide, various nanotubes constitute.
The electricity controlling organization can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy.
Described electromagnetic deflection sweep mechanism is connected with for the one scan control system, described scanning control system is controlled described electromagnetic deflection sweep mechanism, and then the transmit direction by described electromagnetic deflection sweep mechanism control electron beam, and then make electron beam beat diverse location in described electroluminescent semiconductor mechanism, make the diverse location of semiconductor light emitting structure in the electroluminescent semiconductor mechanism luminous, it is overheated to avoid described semiconductor light emitting structure to cause because a position is long-time luminous.
Described electromagnetic deflection sweep mechanism can also adopt the static electronic deflecting system.Provide deflection energy by static, the horizontal deflection of going forward side by side control.
Described reflective metal layer below is provided with a heat dissipation base, and described heat dissipation base connects a circulating cooling system, and described circulating cooling system comprises radiating tube, heat-exchange system, cooling fluid, and described radiating tube is embedded in the described heat dissipation base; Described cooling fluid is arranged in the described radiating tube, and described heat-exchange system connects the entrance and exit of described radiating tube.Cooling fluid is by the radiating tube heat dissipation base of flowing through, and heat dissipation base is cooled, and then semiconductor light emitting structure is cooled, coolant temperature rises, the cooling fluid that heats up is left peripheral radiating tube from outlet, thereby the heat-exchange system of entering is cooled off with cooling fluid and circulated again.
Described cooling fluid adopts insulation, transparent cooling fluid.So that the circulating cooling system isolated high voltage, the setting of having saved other electric shielding systems.Described cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
Description of drawings
Fig. 1 is electroluminescent semiconductor of the present utility model mechanism structural representation;
Fig. 2 is reflective overall structure schematic diagram of the present utility model;
Fig. 3 is another kind of electroluminescent semiconductor of the present utility model mechanism structural representation;
Fig. 4 is transmission-type overall structure schematic diagram of the present utility model.
The specific embodiment
For technological means, creation characteristic that the utility model is realized, reach purpose with effect is easy to understand, below in conjunction with the further elaboration the utility model of concrete diagram.
With reference to Fig. 2, Fig. 4, electron gun excites electricity to cause the ultra-violet light-emitting system to comprise an electroluminescent semiconductor mechanism 1, also comprise a driving source that driving source adopts an electron gun system 2; Electroluminescent semiconductor mechanism 1 is arranged on the target direction of electron gun system 2, and electroluminescent semiconductor mechanism 1 connects an electrode; Electron gun excites electricity to cause the ultra-violet light-emitting system and also is provided with one for transmiting ultraviolet optical emission exit 25.
Electron gun 21 is provided with the negative electrode of emission electronics, and negative electrode can be the negative electrode that materials such as metal, oxide, various nanotubes constitute.
The electricity controlling organization can be a high-tension electricity acceleration mechanism, is used for electron beam is accelerated, and improves energy, perhaps just adjusts and the control beam direction.
Electromagnetic deflection sweep mechanism 24 is connected with for the one scan control system, scanning control system control electromagnetic deflection sweep mechanism 24, and then the transmit direction by electromagnetic deflection sweep mechanism 24 control electron beams, and then make electron beam beat diverse location in electroluminescent semiconductor mechanism 1, make the diverse location of semiconductor light emitting structure in the electroluminescent semiconductor mechanism 1 luminous, it is overheated to avoid semiconductor light emitting structure to cause because a position is long-time luminous.
Electromagnetic deflection sweep mechanism 24 can also adopt the static electronic deflecting system.Provide deflection energy by static, the horizontal deflection of going forward side by side control.
Cooling fluid adopts insulation, transparent cooling fluid.So that circulating cooling system 26 isolated high voltage, the setting of having saved other electric shielding systems.Cooling fluid can adopt the medium cooling fluid, and the Fluorinert as 3M company makes also can adopt perfluor liquid or other non conducting fluids.
Specific embodiment 1:
With reference to Fig. 1, Fig. 2, electroluminescent semiconductor mechanism 1 is created on the reflective metal layer 14, and reflective metal layer 14 connects electrode.The ultraviolet light that sends penetrates from optical emission exit 25 through the reflection back.
The material of these electroluminescent semiconductor layers 12 can be the lattice coupling, also can be that lattice is unmatched.These electroluminescent semiconductor layers 12 can have strain, also can not have strain.
Adjacent two-layer electroluminescent semiconductor layer 12 is the different electroluminescent semiconductor layer 12 of energy gap, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material of forming.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Semiconductor light emitting structure comprises the electroluminescent semiconductor layer 12 of at least two kinds of unlike materials, and comprises at least three layers of electroluminescent semiconductor layer 12, and adjacent two-layer electroluminescent semiconductor layer 12 is the electroluminescent semiconductor layer 12 of unlike material.
Concrete can for: semiconductor light emitting structure comprises the electroluminescent semiconductor layer 12 of two kinds of unlike materials, and comprise at least three layers of electroluminescent semiconductor layer 12, adjacent two-layer electroluminescent semiconductor layer 12 is the electroluminescent semiconductor layer 12 of unlike material, that is, the electroluminescent semiconductor layer 12 of two kinds of materials is alternately arranged and is constituted stacked structure.
The thickness of every layer of electroluminescent semiconductor layer 12 in 1 nanometer to 50 nanometers.
At least two-layer electroluminescent semiconductor layer 12 stacked formation semiconductor light emitting structures, the thickness of semiconductor light emitting structure is more than or equal to 10nm.Thickness also can come specific design according to the needs of wave band and power.
Specific embodiment 2:
With reference to Fig. 3, Fig. 4, electroluminescent semiconductor mechanism 1 can also be semiconductor Ultra-Violet Laser resonator, be provided with semiconductor structure in the semiconductor Ultra-Violet Laser resonator, semiconductor structure is created on the substrate, substrate is provided with a floor height bandgap semiconductor layer, and growth has the different high bandgap semiconductor layer of another layer energy gap on the high bandgap semiconductor layer.Perhaps, electroluminescent semiconductor mechanism 1 is created on the conductive, transparent substrate, and the conductive, transparent substrate is connected electrode.After the ultraviolet ray process conductive, transparent substrate transmission of sending, penetrate from optical emission exit 25.
The present invention selects the different semiconductor layer of energy gap, forms the potential energy well structure on the band structure of new structure thereby form.These potential energy well structures are conducive to retrain carrier on semiconductor conduction band and the valence band on specific energy state, thereby reach the purpose that improves conversion efficiency.
Semiconductor structure comprises the high bandgap semiconductor layer of at least two kinds of unlike materials, and comprises at least three floor height bandgap semiconductor layers, and two adjacent floor height bandgap semiconductor layers are the high bandgap semiconductor layer of unlike material.
Concrete can for: semiconductor structure comprises the high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three floor height bandgap semiconductor layers, two adjacent floor height bandgap semiconductor layers are the high bandgap semiconductor layer of unlike material, that is, the high bandgap semiconductor layer of two kinds of materials is alternately arranged and is constituted stacked structure.The thickness of every floor height bandgap semiconductor layer in 10 nanometers to 40 nanometers.At least two floor height bandgap semiconductors are folded formation semiconductor structure layer by layer, and the thickness of semiconductor structure is more than or equal to 12nm.The thickness of semiconductor structure comes specific design according to required power and wavelength.
The high bandgap semiconductor layer 11 that comprises two-layer at least III-V family semiconductor material in the semiconductor structure.Concrete III-V family semiconductor material can be nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.Comprise it also can being the high bandgap semiconductor layer of two-layer at least II-VI family semiconductor material in the semiconductor structure.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.Semiconductor material can be the lattice coupling, also can be that lattice is unmatched.High bandgap semiconductor layer can have strain, also can not have strain.In order to improve conversion efficiency and regulation and control Wavelength of Laser.
Be provided with high reflection mirror a13 at semiconductor structure one end, the other end is provided with a low speculum a14, and the low speculum a14 outside also is provided with a transparent substrate a15.With one among high reflection mirror a13, the low speculum a14 as substrate.
More than show and described basic principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; that describes in above-described embodiment and the specification just illustrates principle of the present utility model; under the prerequisite that does not break away from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (10)
1. electron gun excites electricity to cause the ultra-violet light-emitting system, and described electron gun excites electricity to cause the ultra-violet light-emitting system to comprise an electroluminescent semiconductor mechanism, also comprise a driving source, it is characterized in that described driving source adopts an electron gun system;
Described electroluminescent semiconductor mechanism is arranged on the target direction of described electron gun system, and described electroluminescent semiconductor mechanism connects an electrode;
Described electron gun excites electricity to cause the ultra-violet light-emitting system and also is provided with one for transmiting ultraviolet optical emission exit.
2. electron gun according to claim 1 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described electroluminescent semiconductor mechanism comprises the electroluminescent semiconductor layer of two-layer laminate at least, constitutes semiconductor light emitting structure.
3. electron gun according to claim 2 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described semiconductor light emitting structure comprises the described electroluminescent semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described electroluminescent semiconductor layer, adjacent two-layer described electroluminescent semiconductor layer is the described electroluminescent semiconductor layer of unlike material.
4. electron gun according to claim 3 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described semiconductor light emitting structure comprises the described electroluminescent semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described electroluminescent semiconductor layer, adjacent two-layer described electroluminescent semiconductor layer is the described electroluminescent semiconductor layer of unlike material, that is, the described electroluminescent semiconductor layer of two kinds of materials is alternately arranged and is constituted stacked structure.
5. electron gun according to claim 2 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described electroluminescent semiconductor mechanism is followed successively by first limiting layer, two-layer at least described electroluminescent semiconductor layer, second limiting layer, and reflective metal layer, described reflective metal layer is provided with reflector layer; The reflection direction of described reflector layer is towards described optical emission exit; Described first limiting layer is towards the electron gun direction.
6. electron gun according to claim 1 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described electroluminescent semiconductor mechanism is semiconductor Ultra-Violet Laser resonator, be provided with semiconductor structure in the described semiconductor Ultra-Violet Laser resonator, described semiconductor structure is created on the substrate, and described substrate is provided with high bandgap semiconductor layer.
7. electron gun according to claim 6 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described semiconductor structure comprises the described high bandgap semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material.
8. electron gun according to claim 7 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: described semiconductor structure comprises the described high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, adjacent two-layer described high bandgap semiconductor layer is the described high bandgap semiconductor layer of unlike material, that is, the described high bandgap semiconductor layer of two kinds of materials is alternately arranged and is constituted stacked structure.
9. electron gun according to claim 8 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: the high bandgap semiconductor layer that comprises two-layer at least III-V family semiconductor material in the described semiconductor structure.
10. electron gun according to claim 9 excites electricity to cause the ultra-violet light-emitting system, it is characterized in that: the high bandgap semiconductor layer that comprises one deck II-VI family semiconductor material in the described semiconductor structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220712215 CN203176744U (en) | 2012-12-20 | 2012-12-20 | Electronic gun excitation ultraviolet electroluminescent system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220712215 CN203176744U (en) | 2012-12-20 | 2012-12-20 | Electronic gun excitation ultraviolet electroluminescent system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203176744U true CN203176744U (en) | 2013-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220712215 Expired - Fee Related CN203176744U (en) | 2012-12-20 | 2012-12-20 | Electronic gun excitation ultraviolet electroluminescent system |
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| Country | Link |
|---|---|
| CN (1) | CN203176744U (en) |
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2012
- 2012-12-20 CN CN 201220712215 patent/CN203176744U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130904 Termination date: 20151220 |
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