TW201517328A - Light-emitting diode structure - Google Patents

Abstract

A light-emitting diode structure mixing light laterally includes a substrate, a first light-emitting diode disposed on the substrate, and a second light-emitting diode disposed on the substrate adjacent to the first light-emitting diode. The first light-emitting diode includes a first electrode, a first light-emitting layer, and a second electrode sequentially stacked on the substrate. The second light-emitting diode includes a third electrode, a second light-emitting layer and a fourth electrode sequentially stacked on the substrate. The first light-emitting layer generates a first light having a first peak wavelength when the first light-emitting layer is excited by photon, and the first light-emitting layer and the second light-emitting layer generate a fourth light having a fourth peak wavelength and a second light having a second peak wavelength smaller than the first peak wavelength respectively when the first light-emitting layer and the second light-emitting layer are excited by electric current.

Description

Light-emitting diode structure

The invention relates to a light-emitting diode structure, in particular to a laterally mixed light-emitting diode structure.

The light-emitting diode chip is a self-emission element, and can be widely applied due to its small volume, no heat radiation, low power consumption, long life, and fast response time. In areas such as lighting or displays.

The luminescent layer of a conventional light-emitting diode wafer can only produce light having a specific color and wavelength. Therefore, if a light-emitting diode structure having a different color from the light generated by the light-emitting diode wafer is to be produced, the fluorescent powder is generally covered on the light-emitting diode, and the fluorescent powder can absorb the light-emitting layer. Light, and emits light having a wavelength greater than the wavelength of the light generated by the luminescent layer. Thereby, the light emitting diode structure can transmit light generated by the light emitting diode chip and the light generated by the fluorescent powder to generate light of a desired color. For example, a blue light emitting diode is used with a yellow fluorescent powder to produce white light.

However, conventional light-emitting diode chips can only produce a specific color, so the color gamut of the light produced by them is not wide. In this way, the color ray of the light generated by the light generated by the light-emitting diode chip and the light generated by the phosphor powder is not so wide, so that the color rendering of the light generated by the structure of the light-emitting diode is limited. . Furthermore, the light generated by the light-emitting layer is easily limited by the structure of the light-emitting diode wafer and there is a large amount of wear and tear. For example: when the light is from the light-emitting diode When the wafer is launched into the air, reflection occurs due to the difference in refractive index, so that the light-emitting diode wafer can be regarded as a waveguide, and the light is confined therein so that the light is absorbed by the light-emitting diode wafer. Alternatively, the light may be limited to the surface of the light-emitting diode wafer and converted to a surface plasma wave that cannot be emitted.

In view of this, it is an industry goal to improve the color rendering and brightness of the light generated by the structure of the light-emitting diode.

The main object of the present invention is to provide a light emitting diode structure for improving the color rendering and brightness of light generated by the structure of the light emitting diode.

To achieve the above objective, the present invention provides a laterally mixed light emitting diode structure including a substrate, a first light emitting diode, and a second light emitting diode. The first light emitting diode is disposed on the substrate, and includes a first electrode, a first light emitting layer and a second electrode, which are sequentially stacked on the substrate, wherein the first light emitting layer is excited by light to generate a first peak wavelength One of the first rays, electrically excited, produces a fourth ray having a fourth peak wavelength. The second light emitting diode is disposed on the substrate adjacent to the first light emitting diode, and the second light emitting diode comprises a third electrode, a second light emitting layer and a fourth electrode, which are sequentially stacked on the substrate, wherein The second luminescent layer is electrically excited to generate a second ray having a second peak wavelength, and the first peak wavelength is greater than the second peak wavelength.

The first light emitting diode and the second light emitting diode capable of generating light of different peak wavelengths are disposed on the substrate to laterally mix the first light and the fourth light and the second light emitting layer generated by the first light emitting layer. The generated second light thereby enhancing the color rendering of the light generated by the light emitting diode structure.

100, 200, 300, 400, 500, 600, 700, 800‧‧‧Lighting diode structure

102‧‧‧Substrate

104‧‧‧First light-emitting diode

106‧‧‧Second light-emitting diode

108‧‧‧First electrode

110‧‧‧First luminescent layer

112‧‧‧second electrode

114‧‧‧ third electrode

116‧‧‧second luminescent layer

118‧‧‧fourth electrode

120‧‧‧ hole transport layer

122‧‧‧ hole injection layer

124‧‧‧Electronic transport layer

126‧‧‧electron injection layer

202, 602‧‧‧ buffer layer

302, 702‧‧‧ scattering particles

502, 802‧‧‧ light conversion layer

L1‧‧‧First light

L2‧‧‧second light

L3‧‧‧3rd light

L4‧‧‧fourth light

1 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a first embodiment of the present invention.

2 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a third embodiment of the present invention.

4 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a fourth embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a fifth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a sixth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a seventh embodiment of the present invention.

FIG. 8 is a cross-sectional view showing the structure of the laterally mixed light emitting diode of the eighth embodiment of the present invention.

The present invention will be described in detail with reference to the preferred embodiments of the invention,

Please refer to FIG. 1 . FIG. 1 is a cross-sectional view showing the structure of a laterally mixed light emitting diode according to a first embodiment of the present invention. As shown in FIG. 1 , the light emitting diode structure 100 of the present embodiment includes a substrate 102 , a first light emitting diode 104 , and a second light emitting diode 106 . The first light emitting diode 104 and the second light emitting diode 106 are disposed on the substrate 102 , and the second light emitting diode 106 is disposed adjacent to the first light emitting diode 104 . The substrate 102 may include a glass substrate, a plastic substrate, or a germanium wafer, but is not limited thereto. The first light emitting diode 104 includes a first electrode 108, a first light emitting layer 110, and a second electrode 112, which are sequentially stacked on the substrate 102. Moreover, the second LED 206 includes a third electrode 114, a second luminescent layer 116, and a fourth electrode 118, which are sequentially stacked on the substrate 102. In this embodiment, the first LEDs 104 and the second LEDs 106 can further include a hole transport layer 120, a hole injection layer 122, an electron transport layer 124, and an electron injection layer 126, respectively. For example, when the first electrode 108 and the third electrode 114 are the anodes of the first light emitting diode 104 and the second light emitting diode 106, respectively, the hole injection layer 122 and the hole transport layer 120 may be sequentially stacked. The first electrode 108 is stacked on the third electrode 114, and the electron transport layer 124 and the electron injection layer 126 are sequentially stacked on the first light emitting layer 110 and the second light emitting layer 116. Thereby, the electrons and the holes can pass through the hole transport layer 120, the hole injection layer 122, the electron transport layer 124, and the electron injection layer 126 into the first light emitting layer 110 and the second light emitting layer 116, thereby enhancing the first light emitting layer. 110 and the second luminescent layer 116 produce brightness of the light. In a modified embodiment of the present invention, the first electrode and the second electrode may also be the cathode and the anode of the first light emitting diode, respectively, and the third electrode and the fourth electrode are not limited to the second light emitting diode respectively. Cathode and anode. Moreover, the positions of the hole injection layer, the hole transport layer, the electron injection layer, and the electron transport layer may be adjusted correspondingly to the positions of the anode and the cathode of the first light emitting diode and the second light emitting diode. It is well known to those skilled in the art and therefore will not be described here. Alternatively, the first light emitting diode and the second light emitting diode may each be provided with at least one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer, respectively. In addition, the number of the first light-emitting diodes and the second light-emitting diodes of the present invention is not limited to that shown in FIG. 1, but may be at least one.

In this embodiment, the first luminescent layer 110 is not only photo-excited to generate a first ray L1 having a first peak wavelength, but also electrically excited to generate a fourth ray L4 having a fourth peak wavelength. The first peak wavelength may be close to the fourth peak wavelength such that the colors of the first light L1 and the fourth light L4 are approximately the same, but the invention is not limited thereto. For example, when the excitation light, for example, blue light, illuminates the first luminescent layer 110, the first luminescent layer 110 can absorb the excitation light and generate a first ray L1 having a peak wavelength greater than a peak wavelength of the excitation light, for example, yellow light. . When a voltage difference is provided between the first electrode 108 and the second electrode 112, the first electrode 108 and the second electrode 112 can respectively be injected into the hole and the electron, and combined in the first luminescent layer 110, thereby generating a fourth Light L4, for example: yellow light. In this embodiment, the first luminescent layer 110 may include an organic luminescent material such as a conjugated polymer (PPV) or 8-hydroxyquinoline aluminum (Alq ₃ ) or an inorganic luminescent material such as gallium, arsenic, phosphorus or aluminum. The first electrode 108 may comprise an opaque conductive material, such as a metal having a thickness, and preferably a conductive material having high reflective properties for reflecting light. The second electrode 112 may include a transparent conductive material such as indium tin oxide, indium zinc oxide, or a metal that is thin enough to transmit light. Therefore, the first light ray L1 and the fourth light ray L4 generated by the first luminescent layer 110 do not penetrate the first electrode 108 but are emitted from the second electrode 112. It can be seen that the first light-emitting diode 104 is a light-emitting diode with a top emission.

In addition, the second luminescent layer 116 can be electrically excited to generate a second ray L2 having a second peak wavelength, and the first peak wavelength is greater than the second peak wavelength. For example, when another voltage difference is provided between the third electrode 114 and the fourth electrode 118, the third electrode 114 and the fourth electrode 118 may be respectively injected into the hole and the electron, and combined in the second luminescent layer 116. This in turn produces a second light L2, such as blue light. Moreover, in this embodiment, the second luminescent layer 116 may include an organic luminescent material, such as a conjugated polymer (PPV) or 8-hydroxyquinoline aluminum (Alq ₃ ) or an inorganic luminescent material, such as gallium, arsenic, Phosphorus or aluminum. The third electrode may comprise an opaque conductive material, such as a metal having a certain thickness, and preferably comprising a highly reflective conductive material for reflecting the second light L2. The fourth electrode 118 may comprise a transparent conductive material such as indium tin oxide, indium zinc oxide or a metal that is thin enough to transmit light. Therefore, the second light ray L2 generated by the second luminescent layer 116 does not penetrate the third electrode 114 but is emitted from the fourth electrode 118. It can be seen that the second LED 206 is also a top-emitting LED, so that the LED structure 100 of the embodiment is a top-emitting structure. In a variant embodiment of the invention, the first electrode and the third electrode may each comprise a transparent conductive material, and the second electrode and the fourth electrode comprise an opaque conductive material. Thereby, the light emitting diode structure is a bottom light emitting structure.

It is worth mentioning that since the first peak wavelength is greater than the second peak wavelength, the spacing between the first electrode 108 and the second electrode 112 is designed to be larger than the spacing between the third electrode 114 and the fourth electrode 118. That is, the thickness of the first light emitting diode 104 is greater than the thickness of the second light emitting diode 106. Thereby, the second luminescent layer 116 between the third electrode 114 and the fourth electrode 118 can be located between the first electrode 108 and the second electrode 112 in a direction parallel to the substrate 102, and the second luminescent layer 116 The generated second light L2 can be laterally incident on the first electrode 108 and the second electrode Between 112, it is absorbed by the first luminescent layer 110, so that the first luminescent layer 110 can generate the first ray L1. Therefore, when the first light emitting diode 104 and the second light emitting diode 106 are simultaneously driven by current, the first light emitting layer 110 can generate not only the fourth light L4 but also the second light L2. A first light L1 is generated. Therefore, the light generated by the LED structure 100 of the embodiment is not only laterally mixed with the fourth light beam L4 of the fourth peak wavelength and the second light beam L2 of the second peak wavelength, but also mixed with the first peak wavelength. A light L1, in turn, enhances the color rendering and color change elasticity of the light generated by the LED structure 100. For example, the first luminescent layer 110 is electrically excited to generate a yellow light of a fourth peak wavelength, and the second luminescent layer 116 is electrically excited to generate a blue light of a second peak wavelength. Moreover, the first luminescent layer 110 can also generate yellow light of the first peak wavelength by excitation of the blue light of the second peak wavelength, so the illuminating diode structure 100 can be a white light emitting diode structure, and the light emitting diode structure The white light emitted by 100 may be mixed with yellow light of a first peak wavelength, yellow light of a fourth peak wavelength, and blue light of a second peak wavelength. The white light generated by the LED structure 100 of the present embodiment has a wider color rendering and color change elasticity than the yellow light of the fourth peak wavelength and the blue light of the second peak wavelength. In a variant embodiment of the invention, the light-emitting diode structure can also be a light-emitting diode structure of other colors.

It should be noted that the excitation light may include light having more than one wavelength. Similarly, by The first light excited by the excitation light may also include light having more than one wavelength. For example, yellow or blue light may correspond to a plurality of wavelengths that form a spectral band. Thus, the term "spectral band" refers to at least one wavelength and an energy band of potentially many wavelengths, and the term "peak wavelength" represents the wavelength of the peak intensity of the spectral band.

The structure of the light-emitting diode of the present invention is not limited to the above embodiment. Will continue to be revealed below The other embodiments and variations of the present invention are shown in the following, and the same reference numerals will be used to refer to the same elements, and the repeated parts will not be described again.

Please refer to FIG. 2, which illustrates the lateral light mixing of the second embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 2, the second LED 201 of the LED structure 200 of the present embodiment further includes a buffer layer 202 disposed on the third electrode 114 and the substrate 102. between. In this embodiment, the buffer layer 202 may have a thickness greater than 0 nm and less than 200 nm, but is not limited thereto. Moreover, the second luminescent layer 116 can penetrate the thickness of the buffer layer 202 to at least partially overlap the first luminescent layer 110 in a direction parallel to one of the substrates 102. As a result, a portion of the second light ray L2 generated by the second luminescent layer 116 can be directly incident into the first luminescent layer 110 and absorbed by the first luminescent layer 110 to reduce the second ray L2 from being injected into the hole 122. The hole transport layer 120 absorbs the amount and can increase the brightness of the first light L1.

Please refer to FIG. 3, which illustrates the lateral light mixing of the third embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 3, the second light emitting diode 106 of the LED structure 300 of the present embodiment further includes a plurality of scattering particles 302 and a reflective layer 304, wherein the scattering particles 302 are different from the second embodiment. The buffer layer 202 is disposed in the buffer layer 202 , and the reflective layer 304 is disposed between the buffer layer 202 and the substrate 102 . In this embodiment, the third electrode 114 includes a transparent conductive material, so that the second light ray L2 emitted by the second luminescent layer 116 can be scattered by the scattering particles 302 to change the traveling direction, so that part of the second light L2 is not It is limited to the light-emitting diode structure 300 due to the difference in refractive index. It should be noted that the first light L1 and the fourth light L4 generated by the first light-emitting layer 110 may also be laterally incident into the buffer layer 202 and emitted by scattering of the scattering particles 302. In this way, the LED structure 300 of the embodiment can not only reduce the number of the first light L1 and the fourth light L4 to be limited to the LED structure 300, but also transmit the second light L2 through the scattering particles 302. It is mixed with the fourth light L4 and the first light L1 to avoid incomplete mixing.

Please refer to FIG. 4, which illustrates a lateral light mixing luminescence according to a fourth embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 4, compared to the third embodiment, the present embodiment The second light emitting diode 106 of the light emitting diode structure 400 is a bottom emitting light emitting diode and does not include a reflective layer. In other words, the second electrode 112 and the fourth electrode 118 of the embodiment include an opaque conductive material, and the first electrode 108 and the third electrode 114 comprise a transparent conductive material. Therefore, the first light ray L1 and the fourth light ray L4 generated by the first luminescent layer 110 are blocked by the second electrode 112 and are emitted only toward the substrate 102. Moreover, the second light ray L2 generated by the second luminescent layer 116 is blocked by the fourth electrode 118, and the second light emitting diode 106 of the embodiment does not include the reflective layer, so the second light ray L2 can only face the substrate. The direction of 102 is emitted. Thereby, the light emitting diode structure 400 of the present embodiment is a bottom light emitting structure.

Please refer to FIG. 5, which shows a lateral light mixing luminescence according to a fifth embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 5, the first light-emitting diode 104 of the light-emitting diode structure 500 of the present embodiment further includes a light-converting layer 502 covering the second electrode 112, and The light conversion layer 502 is excited by light to generate a third light ray L3 having a third peak wavelength. For example, when an excitation light, such as blue light, yellow light, or green light, is irradiated to the light conversion layer 502, the light conversion layer 502 can absorb the excitation light and generate a third light having a third peak wavelength greater than a peak wavelength of the excitation light. L3, for example: green, yellow or red. It is to be noted that, since a part of the first light L1 and a part of the fourth light L4 generated from the first light-emitting layer 110 are converted into surface plasma waves in the second electrode 112, the light conversion layer 502 of the embodiment is It is disposed on the second electrode 112 to absorb the first light L1 and the fourth light L4 converted into surface plasma waves, and emit the third light L3. In this way, the LED structure 500 of the embodiment can effectively reduce the number of the first light L1 and the fourth light L4 that are limited to the second electrode 112 to increase the brightness of the light. Furthermore, the third peak wavelength of the embodiment may be greater than or equal to the first peak wavelength, but the invention is not limited thereto. For example, when the first light L1 and the fourth light L4 generated by the first light emitting layer 110 are yellow light, and the second light L2 generated by the second light emitting layer 116 is blue light, the light conversion layer 502 generates the first The three rays L3 can be red. That is, the light conversion layer 502 can absorb yellow light and blue light to generate red light. Alternatively, when the first light ray L1 and the fourth light ray L4 generated by the first luminescent layer 110 are yellow light, and the second light is emitted The second light L2 generated by the layer 116 is blue light, and the third light L3 generated by the light conversion layer 502 may be yellow light. That is, the light conversion layer 502 can absorb blue light to generate yellow light. As can be seen from the above, the LED structure 500 of the present embodiment can mix the first light wavelength L1 of the first peak wavelength, the fourth light beam L4 of the fourth peak wavelength, the second light beam L2 of the second peak wavelength, and the third peak wavelength. The third light ray L3 can effectively enhance the color rendering and color change elasticity of the light generated by the light emitting diode structure 500. In addition, the amount of surface plasma waves absorbed by the light conversion layer 502 of the present embodiment can be adjusted by changing the thickness of the electron injection layer 126 and the electron transport layer 124 under the second electrode 112 and the second electrode 112.

Please refer to FIG. 6 , which illustrates a lateral light mixing luminescence according to a sixth embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 6, the second LED 201 of the LED structure 600 of the present embodiment further includes a buffer layer 602 disposed on the third electrode 114 and the substrate 102. between. In this embodiment, the buffer layer 602 may have a thickness greater than 0 nm and less than 200 nm, but is not limited thereto. Moreover, the second luminescent layer 116 can penetrate the thickness of the buffer layer 602 to at least partially overlap the light conversion layer 502 in a direction parallel to the substrate 102. As a result, a portion of the second light ray L2 generated by the second luminescent layer 116 can be directly incident into the light conversion layer 502 and absorbed by the light conversion layer 502, so that the light conversion layer 502 can absorb not only the first light L1 or the first light ray. The four rays L4 are converted into components of the surface plasma waves in the vicinity of the second electrode 112, and may also absorb the second rays L2 to generate the third rays L3. Therefore, the LED structure 600 of the embodiment can illuminate the light conversion layer 502 through the second light L2 to increase the intensity of the third light L3 generated by the light conversion layer 502. In this way, the LED structure 600 of the embodiment can adjust the fourth light L4, the second light L2 and the third light by changing the voltage difference between the first light emitting diode 104 and the second light emitting diode 106. The intensity of L3, or the material of the light conversion layer 502 can be changed to change the wavelength of the light to convert the light. In addition, the second light ray L2 excites the first luminescent layer 110 through multiple reflections, so that the first luminescent layer 110 can still generate a small amount of the first ray L1. In this way, the LED structure 600 of the embodiment can transmit the first light L1, the second light L2, the third light L3, and the fourth The light L4 is adjusted and its intensity is changed to change the color of the emitted light, so that the color rendering and color change elasticity of the light generated by the LED structure 600 of the present embodiment can be improved.

Please refer to FIG. 7 , which illustrates a lateral light mixing luminescence according to a seventh embodiment of the present invention. A schematic cross-sectional view of a diode structure. As shown in FIG. 7, the second LED 201 of the LED structure 700 of the present embodiment further includes a plurality of scattering particles 702 and a reflective layer 704, wherein the scattering particles 702 are different from the sixth embodiment. The buffer layer 602 is disposed in the buffer layer 602 , and the reflective layer 704 is disposed between the buffer layer 602 and the substrate 102 . In this embodiment, the third electrode 114 includes a transparent conductive material, so that the second light ray L2 emitted by the second luminescent layer 116 can be scattered by the scattering particles to change the traveling direction, so that part of the second light L2 does not It is limited to the light-emitting diode structure 700 due to the difference in refractive index. It should be noted that the fourth light ray L4 generated by the first luminescent layer 110 can also be emitted by scattering of the scattering particles 702. In this way, the LED structure 700 of the present embodiment can effectively reduce the number of fourth light rays L4 that are limited to the LED structure 700, and thus the luminance of the light can be greatly increased.

Please refer to FIG. 8. FIG. 8 is a cross-sectional view showing the structure of the laterally mixed light emitting diode according to the eighth embodiment of the present invention. As shown in FIG. 8 , the light emitting diode structure 800 of the present embodiment is a bottom light emitting structure, and the first light emitting diode 104 further includes a light converting layer 802, which is disposed on the first embodiment. Between the first electrode 108 and the substrate 102, and the light conversion layer 802 is excited by light, a third light ray L3 having a third peak wavelength is generated. The third peak wavelength may be greater than the fourth peak wavelength or greater than the second peak wavelength. Moreover, the first electrode 108 and the third electrode 114 of the embodiment comprise a transparent conductive material, and the second electrode 112 and the fourth electrode 118 comprise an opaque conductive material. Therefore, the first light L1 and the fourth light L4 generated by the first light-emitting layer 110 are blocked by the second electrode 112, and the second light L2 generated by the second light-emitting layer 116 is blocked by the fourth electrode 118. It is only emitted toward the substrate 102. In this embodiment, the light conversion layer 802 can absorb the first light L1 and the fourth light L4 converted into surface plasma waves in the first electrode 108, and can also absorb the first The second light L2 is used to generate the third light L3. In addition, the amount of surface plasma waves absorbed by the light conversion layer 802 of the present embodiment can be adjusted by changing the thickness of the first electrode 108 and the hole transport layer 120 and the hole injection layer 122 above the first electrode 108.

In other embodiments of the present invention, the first light emitting diode and/or the second light emitting diode Optionally, a cover layer or a light conversion layer may be further included to cover the second electrode and/or the fourth electrode to enhance the amount of light and color rendering, but is not limited thereto. Alternatively, the first light emitting diode and/or the second light emitting diode may optionally further include a buffer layer disposed between the first electrode and/or the third electrode and the substrate, but is not limited thereto. In addition, the first light emitting diode and/or the second light emitting diode may alternatively further comprise a scattering layer disposed on the electrode of the light emitting surface thereof. That is, when the second electrode includes a transparent conductive material, the scattering layer is disposed on the second electrode, and so on, to increase the amount of light. However, the invention is not limited thereto.

In summary, the present invention will produce a first light-emitting diode of different peak wavelengths of light. And the second light emitting diode is disposed on the substrate to laterally mix the first light and the fourth light generated by the first light emitting layer and the second light generated by the second light emitting layer. Moreover, the present invention uses the buffer layer to dispose the second luminescent layer and the first luminescent layer on approximately the same plane, so that the color rendering of the light emitted by the LED structure can be improved. In addition, the present invention adds the scattering particles in the buffer layer to reduce the amount of the first light and the fourth light limited to the first light-emitting diode. Furthermore, the present invention provides a light conversion layer on the light emitting surface of the first light emitting diode to reduce the number of the first light and the fourth light limited to the first electrode or the second electrode and enhance the color rendering of the light. Thereby, the brightness of the light generated by the structure of the light-emitting diode of the present invention can be effectively increased. However, in addition to this, the light-emitting surface of the second light-emitting diode can also be provided with a light-converting layer or a cover layer, which can also enhance the amount of light and color rendering. In addition, a scattering layer may be disposed outside the electrodes of the first or second light emitting diodes to increase the amount of light.

100‧‧‧Lighting diode structure

102‧‧‧Substrate

104‧‧‧First light-emitting diode

106‧‧‧Second light-emitting diode

108‧‧‧First electrode

110‧‧‧First luminescent layer

112‧‧‧second electrode

114‧‧‧ third electrode

116‧‧‧second luminescent layer

118‧‧‧fourth electrode

120‧‧‧ hole transport layer

122‧‧‧ hole injection layer

124‧‧‧Electronic transport layer

126‧‧‧electron injection layer

L1‧‧‧First light

L2‧‧‧second light

L4‧‧‧fourth light

Claims (16)

A light emitting diode structure includes: a substrate; a first light emitting diode disposed on the substrate, and comprising a first electrode, a first light emitting layer and a second electrode, sequentially stacked on the substrate The first illuminating layer is excited by light to generate a first ray having a first peak wavelength; and a second illuminating diode is disposed on the substrate adjacent to the first illuminating diode, the second The light emitting diode includes a third electrode, a second light emitting layer and a fourth electrode, which are sequentially stacked on the substrate, wherein the second light emitting layer is electrically excited to generate a second light having a second peak wavelength. And the first peak wavelength is greater than the second peak wavelength. The light emitting diode structure of claim 1, wherein the second light emitting layer is located between the first electrode and the second electrode in a direction parallel to one of the substrates. The illuminating diode structure of claim 2, wherein the second illuminating diode further comprises a buffer layer disposed between the third electrode and the substrate. The light emitting diode structure of claim 3, wherein the second light emitting layer at least partially overlaps the first light emitting layer in the direction. The light emitting diode structure of claim 3, wherein the buffer layer has a thickness greater than 0 nm and less than 200 nm. The illuminating diode structure of claim 3, wherein the second illuminating diode further comprises a plurality of scattering particles dispersed in the buffer layer, and the third electrode comprises a transparent conductive material. The illuminating diode structure of claim 6, wherein the second illuminating diode further comprises a reflective layer disposed between the buffer layer and the substrate. The light emitting diode structure of claim 1, wherein the first electrode comprises an opaque conductive material, and the second electrode and the fourth electrode comprise a transparent conductive material. The light-emitting diode structure of claim 8, wherein the first light-emitting diode further comprises a light-converting layer covering the second electrode, and the light-converting layer is excited by light to generate a third peak wavelength One of the third rays. The light emitting diode structure of claim 9, wherein the third peak wavelength is greater than the first peak wavelength. The illuminating diode structure of claim 9, wherein the second illuminating diode further comprises a buffer layer disposed between the third electrode and the substrate. The light emitting diode structure of claim 11, wherein the second light emitting layer at least partially overlaps the light converting layer in a direction parallel to the substrate, and the third peak wavelength is greater than the second peak wavelength. The illuminating diode structure of claim 11, wherein the second illuminating diode further comprises a plurality of scattering particles dispersed in the buffer layer, and the third electrode comprises a transparent conductive material. The illuminating diode structure of claim 13, wherein the second illuminating diode further comprises a reflective layer disposed between the buffer layer and the substrate. The light emitting diode structure of claim 1, wherein the first electrode and the third electrode comprise a transparent conductive material, and the second electrode and the fourth electrode comprise an opaque conductive material. The light-emitting diode structure of claim 15, wherein the first light-emitting diode further comprises a light-converting layer disposed between the first electrode and the substrate, and the light-converting layer is excited by light to generate The third light of the third peak wavelength.