CN203422317U - Portable identification perspective system utilizing ultraviolet light excited by electronic beams - Google Patents
Portable identification perspective system utilizing ultraviolet light excited by electronic beams Download PDFInfo
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- CN203422317U CN203422317U CN201220712114.5U CN201220712114U CN203422317U CN 203422317 U CN203422317 U CN 203422317U CN 201220712114 U CN201220712114 U CN 201220712114U CN 203422317 U CN203422317 U CN 203422317U
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Abstract
The utility model relates to the field of imaging, in particular to the field of ultraviolet imaging. A portable identification perspective system utilizing ultraviolet light excited by electronic beams comprises an ultraviolet light source, display equipment and an image sensing system, wherein the ultraviolet light source adopts an electronic beam excitation ultraviolet light source; the electronic beam excitation ultraviolet light source comprises an electroluminescence semiconductor mechanism and an excitation source; and the excitation source adopts an electronic gun system. An ultraviolet light source of a conventional identification perspective system is replaced with the novel electronic beam excited ultraviolet light source, the size of the equipment is reduced, the power consumption is reduced, and the purity of ultraviolet light at certain wave bands is improved; and the electronic beam excited ultraviolet light source provides a current for the electroluminescence semiconductor mechanism through the electronic beams, and a current loop is formed through electrodes.
Description
Technical field
The utility model relates to imaging field, is specifically related to ultraviolet imagery field.
Background technology
Ultraviolet wavelength is shorter than visible ray, but the electromagnetic radiation longer than X ray.Ultraviolet light range of wavelength in electromagnetic wave spectrum is 10-400 nm.Within the scope of this, start from the Shortwave Limit of visible ray, and with the wavelength overlaid of long wave X ray.Ultraviolet light is divided into A ray, B ray and C ray (being called for short UVA, UVB and UVC), and wavelength coverage is respectively 400-315nm, 315-280nm, 280-190nm.
Because ultraviolet ray has more penetration capacity than general visible ray, so the work that scientist also often has an X-rayed or identifies with ultraviolet ray (just look like carry out health examination with X-ray the same).For example utilize ultraviolet ray to check the true and false, the food security of crack trickle on metal, picture, when exploring space, ultraviolet ray can use even.The equipment that carries out above-mentioned work can be called ultraviolet ray to be identified and fluoroscopy system.
But, existing ultraviolet ray evaluation and fluoroscopy system, volume is large, expensive, light source is short serviceable life, is difficult to carry out universalness application at numerous areas.
Utility model content
The purpose of this utility model is, a kind of portable evaluation and fluoroscopy system of electron-beam excitation ultraviolet light is provided, and solves above technical matters.
The technical matters that the utility model solves can realize by the following technical solutions:
The portable evaluation of electron-beam excitation ultraviolet light and fluoroscopy system comprise a ultraviolet source, a display device and an image sensing, it is characterized in that:
Described ultraviolet source adopts an electron-beam excitation ultraviolet source, and described electron-beam excitation ultraviolet source comprises an electroluminescence semiconductor mechanism, also comprises a driving source, and described driving source adopts an electron gun system;
Described electroluminescence semiconductor mechanism is arranged in the target direction of described electron gun system, and described electroluminescence semiconductor mechanism connects an electrode;
Described electron-beam excitation ultraviolet source is also provided with one for transmiting ultraviolet optical emission exit.
By the ultraviolet source in traditional evaluation and fluoroscopy system being replaced with to novel electron-beam excitation ultraviolet source, reduce equipment volume, reduce power consumption and improved the purity of specific band ultraviolet light.Electron-beam excitation ultraviolet source provides electric current by electron beam for electroluminescence semiconductor mechanism, and forms current return by described electrode.
The projection of described optical emission exit receives towards in the same way towards image with described image sensing.So that image sensing receives the ultraviolet light reflecting, present needed evaluation image or fluoroscopy images.
The projection of described optical emission exit receives towards relative towards the image with described image sensing, is provided with laying for goods platform to be detected between the two.So that image sensing receives the ultraviolet light casting out from article to be detected, present needed evaluation image or fluoroscopy images.
Portable evaluation and the fluoroscopy system of described electron-beam excitation ultraviolet light also comprise a power-supply system, and described power-supply system is provided with an accumulator, with the charging circuit being connected with described accumulator.So that mobile, use.
Described electroluminescence semiconductor mechanism is created on a reflective metal layer, and described reflective metal layer connects described electrode.The ultraviolet light sending penetrates from optical emission exit after reflection.
Or described electroluminescence semiconductor mechanism is created on a conductive, transparent substrate, and described conductive, transparent substrate is connected to described electrode.The ultraviolet ray of sending, after the transmission of described conductive, transparent substrate, is penetrated from described optical emission exit.
Described electroluminescence semiconductor mechanism comprises at least electroluminescence semiconductor layer of two-layer laminate, forms semiconductor light emitting structure.
The material of these electroluminescence semiconductor layers can be Lattice Matching, can be also that lattice is unmatched.These electroluminescence semiconductor layers can have strain, also can there is no strain.
Adjacent two-layer described electroluminescence semiconductor layer is the electroluminescence semiconductor layer that energy gap is different, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material forming.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain charge carrier in semiconductor conduction band and valence band on specific energy state, thereby reach the object that improves conversion efficiency.
Described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of at least two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, the described electroluminescence semiconductor layer that adjacent two-layer described electroluminescence semiconductor layer is unlike material.
Concrete can be: described semiconductor light emitting structure comprises the described electroluminescence semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described electroluminescence semiconductor layer, the described electroluminescence semiconductor layer that adjacent two-layer described electroluminescence semiconductor layer is unlike material, that is, the described electroluminescence semiconductor layer alternative arrangement of two kinds of materials forms stacked structure.
The thickness of every layer of described electroluminescence semiconductor layer in 1 nanometer to 50 nanometers.
The described semiconductor light emitting structure of the stacked formation of at least two-layer described electroluminescence semiconductor layer, the thickness of described semiconductor light emitting structure is more than or equal to 10nm.Thickness also can be according to wave band and power need to carry out specific design.
Described electroluminescence semiconductor mechanism is followed successively by the first limiting layer, at least two-layer described electroluminescence semiconductor layer, the second limiting layer, and described reflective metal layer, and described reflective metal layer is provided with reflector layer; The reflection direction of described reflector layer is towards described optical emission exit; Described the first limiting layer is towards described electron gun direction.Light is transmitted into the external world through the optical emission exit of printing opacity.
Described electroluminescence semiconductor mechanism can also be semiconductor Ultra-Violet Laser resonator cavity, in described semiconductor Ultra-Violet Laser resonator cavity, be provided with semiconductor structure, described semiconductor structure is created on described substrate, described being lining with is provided with a floor height bandgap semiconductor layer, and on described high bandgap semiconductor layer, growth has another layer of high bandgap semiconductor layer that energy gap is different.
Select the different semiconductor layer of energy gap, thereby form in the band structure of new structure, form potential energy well structure.These potential energy well structures are conducive to retrain charge carrier in semiconductor conduction band and valence band on specific energy state, thereby reach the object that improves conversion efficiency.
Described semiconductor structure comprises the described high bandgap semiconductor layer of at least two kinds of unlike materials, and comprises at least three layers of described high bandgap semiconductor layer, the described high bandgap semiconductor layer that adjacent two-layer described high bandgap semiconductor layer is unlike material.
Concrete can be: described semiconductor structure comprises the described high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three layers of described high bandgap semiconductor layer, the described high bandgap semiconductor layer that adjacent two-layer described high bandgap semiconductor layer is unlike material, that is, the described high bandgap semiconductor layer alternative arrangement of two kinds of materials forms stacked structure.
The thickness of every layer of described high bandgap semiconductor layer in 1 nanometer to 50 nanometers.
At least two-layer described high bandgap semiconductor is the described semiconductor structure of folded formation layer by layer, and the thickness of described semiconductor structure is more than or equal to 10nm.Thickness also can be according to wave band and power need to carry out specific design.
Described semiconductor structure comprises the high bandgap semiconductor layer of at least two-layer III-V family semiconductor material.Concrete III-V family semiconductor material can be the nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.
Described semiconductor structure comprises the high bandgap semiconductor layer of one deck II-VI family semiconductor material.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.
Semiconductor material can be Lattice Matching, can be also that lattice is unmatched.High bandgap semiconductor layer can have strain, also can there is no strain.In order to improve the sharp light wavelength of conversion efficiency and regulation and control.
In described semiconductor structure one end, be provided with high reflection mirror, the other end is provided with a low catoptron, and described low catoptron outside is also provided with a transparent substrate.One that usings in high reflection mirror, low catoptron as described substrate.
Described electron gun system comprises a vacuum chamber, from described vacuum chamber one end, to the other end, is placed with successively electron gun, electricity control gear, electromagnetic focusing mechanism, electromagnetic deflection scanning mechanism, electroluminescence semiconductor mechanism, optical emission exit.
Described optical emission exit is positioned at described vacuum chamber side, and the reflection direction of described reflective metal layer is towards described optical emission exit.So that beam projecting.
The electron beam that described electron gun sends passes through electricity control gear, electromagnetic focusing mechanism, electromagnetic deflection scanning mechanism successively, forms the high-power electron beam present scanning mode, squeezes into described electroluminescence semiconductor mechanism, for light transmitting provides energy.
The electron beam that described electron gun sends also can be operated in impulse ejection state or continuous emission state.Choosing of these duties is that concrete application according to the performance of luminescent material and luminotron decides.
The surface that the energy that high-power electron beam carries can make it pass as the electroluminescence semiconductor mechanism of target produces the semiconductor light emitting structure of light to Danone.High-power electron beam can pass to the bound electron in semiconductor material energy, thereby produces electronics freely--hole pair.Semiconductor material structure than more complete situation under, the free electron producing like this--hole is to by compound and produce photon.
Described electron gun is provided with the negative electrode of electron emission, and described negative electrode can be the negative electrode that the materials such as metal, oxide, various nanotubes form.
Electricity control gear can be a high-tension electricity acceleration mechanism, for electron beam is accelerated, improves energy.
Described electromagnetic deflection scanning mechanism is connected with for one scan control system, described scanning control system is controlled described electromagnetic deflection scanning mechanism, and then by the transmit direction of described electromagnetic deflection scanning mechanism control electron beam, and then make electron beam beat the diverse location in described electroluminescence semiconductor mechanism, make the diverse location of semiconductor light emitting structure in electroluminescence semiconductor mechanism luminous, avoid described semiconductor light emitting structure to cause because a position is long-time luminous overheated.
Described electromagnetic deflection scanning mechanism can also adopt Electrostatic Electron deflection system.By static, provide deflection energy, the horizontal deflection of going forward side by side is controlled.
Described reflective metal layer below is provided with a heat dissipation base, and described heat dissipation base connects a circulating cooling system, and described circulating cooling system comprises radiating tube, heat-exchange system, liquid coolant, and described radiating tube is embedded in described heat dissipation base; Described liquid coolant is arranged in described radiating tube, and described heat-exchange system connects the entrance and exit of described radiating tube.Liquid coolant is by the radiating tube heat dissipation base of flowing through, and heat dissipation base is cooled, and then semiconductor light emitting structure is cooled, coolant temperature rises, the liquid coolant heating up is left periphery radiating tube from outlet, thereby the heat-exchange system of entering is carried out cooling and liquid coolant and again circulated.
Described liquid coolant adopts insulation, transparent liquid coolant.So that circulating cooling system isolated high voltage, the setting of having saved other electric shielding systems.The Fluorinert that described liquid coolant can adopt medium liquid coolant ，Ru 3M company to manufacture, also can adopt perfluor liquid or other non conducting fluids.
Accompanying drawing explanation
Fig. 1 is electroluminescence semiconductor of the present utility model mechanism structural representation;
Fig. 2 is reflective one-piece construction schematic diagram of the present utility model;
Fig. 3 is another kind of electroluminescence semiconductor of the present utility model mechanism structural representation;
Fig. 4 is transmission-type one-piece construction schematic diagram of the present utility model.
Embodiment
For technological means, creation characteristic that the utility model is realized, reach object with effect is easy to understand, below in conjunction with the further elaboration the utility model of concrete diagram.
The portable evaluation of electron-beam excitation ultraviolet light and fluoroscopy system comprise a ultraviolet source, a display device and an image sensing, and ultraviolet source adopts an electron-beam excitation ultraviolet source.
With reference to Fig. 2, Fig. 4, electron-beam excitation ultraviolet source comprises an electroluminescence semiconductor mechanism 1, also comprises a driving source, and driving source adopts an electron gun system 2; Electroluminescence semiconductor mechanism 1 is arranged in the target direction of electron gun system 2, and electroluminescence semiconductor mechanism 1 connects an electrode; Electron-beam excitation ultraviolet source is also provided with one for transmiting ultraviolet optical emission exit 25.
By the ultraviolet source in traditional evaluation and fluoroscopy system being replaced with to novel electron-beam excitation ultraviolet source, reduce equipment volume, reduce power consumption and improved the purity of specific band ultraviolet light.Electron-beam excitation ultraviolet source provides electric current by electron beam for electroluminescence semiconductor mechanism 1, and forms current return by electrode.
The projection of optical emission exit 25 receives towards in the same way towards image with image sensing.So that image sensing receives the ultraviolet light reflecting, present needed evaluation image or fluoroscopy images.
The projection of optical emission exit 25 receives towards relative towards the image with image sensing, is provided with laying for goods platform to be detected between the two.So that image sensing receives the ultraviolet light casting out from article to be detected, present needed evaluation image or fluoroscopy images.
Portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light also comprise a power-supply system, and power-supply system is provided with an accumulator, with the charging circuit being connected with accumulator.So that mobile, use.
Electromagnetic deflection scanning mechanism 24 is connected with for one scan control system, scanning control system is controlled electromagnetic deflection scanning mechanism 24, and then by the transmit direction of electromagnetic deflection scanning mechanism 24 control electron beams, and then make electron beam beat the diverse location in electroluminescence semiconductor mechanism 1, make the diverse location of semiconductor light emitting structure in electroluminescence semiconductor mechanism 1 luminous, avoid semiconductor light emitting structure to cause because a position is long-time luminous overheated.
Electromagnetic deflection scanning mechanism 24 can also adopt Electrostatic Electron deflection system.By static, provide deflection energy, the horizontal deflection of going forward side by side is controlled.
Liquid coolant adopts insulation, transparent liquid coolant.So that circulating cooling system 26 isolated high voltage, the setting of having saved other electric shielding systems.The Fluorinert that liquid coolant can adopt medium liquid coolant ，Ru 3M company to manufacture, also can adopt perfluor liquid or other non conducting fluids.
Specific embodiment 1:
With reference to Fig. 1, Fig. 2, electroluminescence semiconductor mechanism 1 is created on a reflective metal layer 14, and reflective metal layer 14 connecting electrodes.The ultraviolet light sending penetrates from optical emission exit 25 after reflection.
The material of these electroluminescence semiconductor layers 12 can be Lattice Matching, can be also that lattice is unmatched.These electroluminescence semiconductor layers 12 can have strain, also can there is no strain.
Adjacent two-layer electroluminescence semiconductor layer 12 is the electroluminescence semiconductor layer 12 that energy gap is different, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material forming.So that improve conversion efficiency and regulation and control light wavelength.These potential energy well structures are conducive to retrain charge carrier in semiconductor conduction band and valence band on specific energy state, thereby reach the object that improves conversion efficiency.
Semiconductor light emitting structure comprises the electroluminescence semiconductor layer 12 of at least two kinds of unlike materials, and comprises at least three layers of electroluminescence semiconductor layer 12, the electroluminescence semiconductor layer 12 that adjacent two-layer electroluminescence semiconductor layer 12 is unlike material.
Concrete can be: semiconductor light emitting structure comprises the electroluminescence semiconductor layer 12 of two kinds of unlike materials, and comprise at least three layers of electroluminescence semiconductor layer 12, the electroluminescence semiconductor layer 12 that adjacent two-layer electroluminescence semiconductor layer 12 is unlike material, that is, electroluminescence semiconductor layer 12 alternative arrangements of two kinds of materials form stacked structure.
The thickness of every layer of electroluminescence semiconductor layer 12 in 1 nanometer to 50 nanometers.
The stacked formation semiconductor light emitting structure of at least two-layer electroluminescence semiconductor layer 12, the thickness of semiconductor light emitting structure is more than or equal to 10nm.Thickness also can be according to wave band and power need to carry out specific design.
Specific embodiment 2:
With reference to Fig. 3, Fig. 4, electroluminescence semiconductor mechanism 1 can also be semiconductor Ultra-Violet Laser resonator cavity, in semiconductor Ultra-Violet Laser resonator cavity, be provided with semiconductor structure, semiconductor structure is created on substrate, substrate is provided with a floor height bandgap semiconductor layer a11, and the upper growth of high bandgap semiconductor layer a11 has another layer of high bandgap semiconductor layer a12 that energy gap is different.Or electroluminescence semiconductor mechanism 1 is created on a conductive, transparent substrate, and by conductive, transparent substrate connecting electrode.The ultraviolet ray of sending, after the transmission of conductive, transparent substrate, is penetrated from optical emission exit 25.
The present invention selects the semiconductor layer that energy gap is different, thereby form in the band structure of new structure, forms potential energy well structure.These potential energy well structures are conducive to retrain charge carrier in semiconductor conduction band and valence band on specific energy state, thereby reach the object that improves conversion efficiency.
Semiconductor structure comprises high bandgap semiconductor layer a11, the a12 of at least two kinds of unlike materials, and comprises at least three floor height bandgap semiconductor layers, two adjacent floor height bandgap semiconductor layer a11, the high bandgap semiconductor layer that a12 is unlike material.
Concrete can be: semiconductor structure comprises the high bandgap semiconductor layer of two kinds of unlike materials, and comprise at least three floor height bandgap semiconductor layers, two adjacent floor height bandgap semiconductor layer a11, the high bandgap semiconductor layer that a12 is unlike material, that is, the high bandgap semiconductor layer alternative arrangement of two kinds of materials forms stacked structure.The thickness of every floor height bandgap semiconductor layer in 10 nanometers to 40 nanometers.At least two floor height bandgap semiconductor layer a11, the stacked formation semiconductor structure of a12, the thickness of semiconductor structure is more than or equal to 12nm.The thickness of semiconductor structure carrys out specific design according to required power and wavelength.
Semiconductor structure comprises the high bandgap semiconductor layer 11 of at least two-layer III-V family semiconductor material.Concrete III-V family semiconductor material can be the nitride based III-V family semiconductor material such as aluminium nitride, gallium nitride.Semiconductor structure comprises it can being also the high bandgap semiconductor layer a12 of at least two-layer II-VI family semiconductor material.II-VI family semiconductor material can be the II-VI family semiconductor material of ZnMgSSe system.Semiconductor material can be Lattice Matching, can be also that lattice is unmatched.High bandgap semiconductor layer can have strain, also can there is no strain.In order to improve the sharp light wavelength of conversion efficiency and regulation and control.
In semiconductor structure one end, be provided with high reflection mirror a13, the other end is provided with a low catoptron a14, and low catoptron a14 outside is also provided with a transparent substrate a15.One that usings in high reflection mirror a13, low catoptron a14 as substrate.
More than show and described ultimate principle of the present utility model and principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that in above-described embodiment and instructions, describes just illustrates principle of the present utility model; do not departing under the prerequisite of the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (10)
1. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light, comprise a ultraviolet source, a display device and an image sensing, it is characterized in that:
Described ultraviolet source adopts an electron-beam excitation ultraviolet source, and described electron-beam excitation ultraviolet source comprises an electroluminescence semiconductor mechanism, also comprises a driving source, and described driving source adopts an electron gun system;
Described electroluminescence semiconductor mechanism is arranged in the target direction of described electron gun system, and described electroluminescence semiconductor mechanism connects an electrode;
Described electron-beam excitation ultraviolet source is also provided with one for transmiting ultraviolet optical emission exit.
2. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 1, is characterized in that: the projection of described optical emission exit receives towards in the same way towards the image with described image sensing.
3. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 1, it is characterized in that: the projection of described optical emission exit receives towards relative towards the image with described image sensing, is provided with laying for goods platform to be detected between the two.
4. according to portable evaluation and the fluoroscopy system of the electron-beam excitation ultraviolet light described in claim 1,2 or 3, it is characterized in that: portable evaluation and the fluoroscopy system of described electron-beam excitation ultraviolet light also comprise a power-supply system, described power-supply system is provided with an accumulator, with the charging circuit being connected with described accumulator.
5. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 4, is characterized in that: described electroluminescence semiconductor mechanism is created on a reflective metal layer, and described reflective metal layer connects described electrode.
6. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 4, is characterized in that: described electroluminescence semiconductor mechanism is created on a conductive, transparent substrate, and described conductive, transparent substrate is connected to described electrode.
7. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 4, is characterized in that: described electroluminescence semiconductor mechanism comprises at least electroluminescence semiconductor layer of two-layer laminate, forms semiconductor light emitting structure;
Adjacent two-layer described electroluminescence semiconductor layer is the electroluminescence semiconductor layer that energy gap is different, thereby forms single potential energy well or the structure of many potential energy well in the band structure of the new material forming.
8. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 4, is characterized in that: described electroluminescence semiconductor mechanism comprises at least electroluminescence semiconductor layer of two-layer laminate, forms semiconductor light emitting structure;
Described electroluminescence semiconductor mechanism is followed successively by the first limiting layer, at least two-layer described electroluminescence semiconductor layer, the second limiting layer, and reflective metal layer, and described reflective metal layer is provided with reflector layer; The reflection direction of described reflector layer is towards described optical emission exit; Described the first limiting layer is towards described electron gun direction.
9. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 4, is characterized in that: described electroluminescence semiconductor mechanism is semiconductor Ultra-Violet Laser resonator cavity.
10. portable evaluation and the fluoroscopy system of electron-beam excitation ultraviolet light according to claim 9, it is characterized in that: in described semiconductor Ultra-Violet Laser resonator cavity, be provided with semiconductor structure, described semiconductor structure is created on substrate, described substrate is provided with a floor height bandgap semiconductor layer, and on described high bandgap semiconductor layer, growth has another layer of high bandgap semiconductor layer that energy gap is different.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220712114.5U CN203422317U (en) | 2012-12-20 | 2012-12-20 | Portable identification perspective system utilizing ultraviolet light excited by electronic beams |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201220712114.5U CN203422317U (en) | 2012-12-20 | 2012-12-20 | Portable identification perspective system utilizing ultraviolet light excited by electronic beams |
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| CN203422317U true CN203422317U (en) | 2014-02-05 |
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| CN201220712114.5U Expired - Fee Related CN203422317U (en) | 2012-12-20 | 2012-12-20 | Portable identification perspective system utilizing ultraviolet light excited by electronic beams |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112557863A (en) * | 2020-12-09 | 2021-03-26 | 中国科学院云南天文台 | Platform and method for measuring carrier conversion efficiency |
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Granted publication date: 20140205 Termination date: 20151220 |
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| EXPY | Termination of patent right or utility model |