CN203135846U - Photoelectric signaling conversion circuit and plasma television touch control pen - Google Patents

Photoelectric signaling conversion circuit and plasma television touch control pen Download PDF

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Publication number
CN203135846U
CN203135846U CN 201220677949 CN201220677949U CN203135846U CN 203135846 U CN203135846 U CN 203135846U CN 201220677949 CN201220677949 CN 201220677949 CN 201220677949 U CN201220677949 U CN 201220677949U CN 203135846 U CN203135846 U CN 203135846U
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circuit
links
operational amplifier
resistance
output
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韩盈盈
吴凡
李长顺
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Qingdao Goertek Co Ltd
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Qingdao Goertek Co Ltd
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Abstract

The utility model discloses a photoelectric signaling conversion circuit and a plasma television touch control pen, wherein the photoelectric signaling conversion circuit comprises a photodiode, a current and voltage transformation and amplification circuit and a shaping circuit, the current and voltage transformation and amplification circuit comprises a first operational amplifier and a first reactive circuit, the anode of the photodiode is grounded, the cathode is connected with the anti-phase input terminal of the first operational amplifier, one terminal of the reactive circuit is connected with the output terminal of the first operational amplifier, the other terminal is connected with the anti-phase input terminal of the first operational amplifier, the positive-phase input terminal of the operational amplifier is grounded, and the output terminal of the first operational amplifier is connected with the input terminal of the shaping circuit. The photoelectric signaling conversion circuit is high in anti-electromagnetic interference capability, provides large gains, and is compatible to weak signals. The gains are adjustable, and the photoelectric signaling conversion circuit is compatible to brightness of different plasma televisions.

Description

A kind of photosignal change-over circuit and a kind of plasm TV pointer
Technical field
The utility model relates to the photoelectric conversion technique field, particularly a kind of photosignal change-over circuit and a kind of plasm TV pointer
Background technology
The plasm TV pointer is present emerging a kind of electronic product, and this electronic product can arbitrarily be write on plasm TV, and can finish and be similar to mouse function.Its operation principle is that each pixel of plasm TV sends the light signal that has positional information, and pointer reads this signal and calculates coordinate figure, sends to TV by wireless mode again, shows track by TV in this coordinate points.
Above-mentioned functions is to be finished by the photosignal change-over circuit in the pointer, the quality of this circuit determined pointer whether can be correctly, reliably, the coordinate of output contact timely.How to make the signal of telecommunication of this circuit output by the correct identification of the processor in this circuit, guarantee that quality of signals and stability are the final goals that this circuit will reach.The plasm TV principle of luminosity has determined that its screen periphery has very strong electromagnetic interference, and how can effectively suppress electromagnetic interference is the problem that existing photosignal change-over circuit runs into.The plasma screen brightness difference of different model, and same plasma screen As time goes on, brightness is also in constantly decay, how to make the photosignal change-over circuit can identify and the signal of handling different brightness, or even the bigger luminance signal of span, be another problem that existing photosignal change-over circuit runs into.
The utility model content
In view of the above problems, the utility model has been proposed in order to a kind of overcome the problems referred to above or a kind of photosignal change-over circuit that addresses the above problem at least in part and a kind of plasm TV pointer are provided.
For achieving the above object, the technical solution of the utility model is achieved in that
The utility model discloses a kind of photosignal change-over circuit, this photosignal change-over circuit comprises: photodiode, current-voltage conversion and amplifying circuit and shaping circuit; Described current-voltage conversion and amplifying circuit comprise operational amplifier one and feedback circuit one; Wherein, the plus earth of photodiode, negative pole connects the inverting input of operational amplifier one; The output of one termination operational amplifier one of feedback circuit one, the inverting input of another termination operational amplifier one; The positive input end grounding of operational amplifier one; The output of operational amplifier one is connected with the input of shaping circuit; Photodiode is used for converting the light signal that receives to current signal; Current-voltage conversion and amplifying circuit are used for and will convert voltage signal to by the current signal of photodiode output, and amplify, and obtain first voltage signal; Shaping circuit is used for and will converts digital signal to by first voltage signal of current-voltage conversion and amplifying circuit output.
This photosignal change-over circuit also comprises: processor and gain control circuit one; First level adjustment interface and the digital signal interface arranged on the described processor; The digital signal interface of processor links to each other with the output of shaping circuit, and the first level adjustment interface of processor links to each other with a corresponding end of gain control circuit one; The other end of gain control circuit one links to each other with the corresponding tie point of feedback circuit one.Processor is used for by first level adjustment interface output high level or low level; And be used for making corresponding operating to being handled by the digital signal of shaping circuit output.Gain control circuit one is used for making that the gain of current-voltage conversion and amplifying circuit is low gain when the first level adjustment interface output low level of processor; When the first level adjustment interface output high level of processor, make that the gain of current-voltage conversion and amplifying circuit is high-gain.
Described gain control circuit one comprises field effect transistor one and resistance, wherein, the grid of field effect transistor one links to each other with the first level adjustment interface of processor, the source ground of field effect transistor one, the drain electrode of field effect transistor one links to each other with an end of resistance, and the other end of resistance links to each other with the corresponding tie point of feedback circuit one.When the first level adjustment interface output low level of processor, the grid of field effect transistor one is low level, makes that the gain of current-voltage conversion and amplifying circuit is low gain; When the first level adjustment interface of processor was exported high level, the grid of field effect transistor one was high level, makes that the gain of current-voltage conversion and amplifying circuit is high-gain.
Described current-voltage conversion and amplifying circuit also comprise by a resistance and the high-pass filtering circuit that electric capacity is formed; One end of described electric capacity links to each other with the output of operational amplifier one, and the other end of described electric capacity links to each other with the input of shaping circuit, and the other end of described electric capacity also is connected with an end of described resistance, the other end ground connection of described resistance.Here, the high-pass filtering network is used for the low-frequency noise that filtering is mixed in first voltage signal.
Described current-voltage conversion and amplifying circuit also comprise by two electric capacity and the filter circuit that resistance is formed; An end of one of them electric capacity links to each other the other end ground connection of this electric capacity in one end of described resistance and power supply and described two electric capacity; The other end of described resistance links to each other with the power positive end of operational amplifier one, the power cathode end ground connection of operational amplifier one; The other end of described resistance also with described two electric capacity in wherein an end of another electric capacity link to each other the other end ground connection of this electric capacity.Here, ∏ type filter circuit is used for the filter out power noise.
This photosignal change-over circuit also comprises: voltage amplifier circuit; This voltage amplifier circuit comprises operational amplifier two and feedback circuit two; One end of feedback circuit two links to each other with the inverting input of operational amplifier two, and the other end links to each other with the output of operational amplifier two; The normal phase input end of operational amplifier two links to each other with the output of amplifying circuit with current-voltage conversion, and the output of operational amplifier two links to each other with the input of shaping circuit.
Described voltage amplifier circuit also comprises a gain control circuit two, also has the second level adjustment structure on the described processor.The corresponding tie point of described feedback circuit two links to each other with gain control circuit two; Wherein, gain control circuit two comprises field effect transistor two and resistance; Here, the grid of field effect transistor two links to each other with second electric level interface of processor, the source ground of field effect transistor two, and the drain electrode of field effect transistor two links to each other with an end of resistance, and the other end of resistance links to each other with the corresponding tie point of feedback circuit two.When the second level adjustment interface output low level of processor, the grid of field effect transistor two is low level, makes that the gain of voltage amplifier circuit is low gain; When the second level adjustment interface of processor was exported high level, the grid of field effect transistor two was high level, makes that the gain of voltage amplifier circuit is high-gain.
In this photosignal change-over circuit, voltage amplifier circuit also comprises by a resistance and the low-pass filter circuit that electric capacity forms; One end of described resistance links to each other with the output of operational amplifier two, and the other end of described resistance links to each other with the input of shaping circuit, and the other end of described resistance also links to each other with an end of described electric capacity, the other end ground connection of described electric capacity.
In embodiment of the present utility model, operational amplifier one and described operational amplifier two can be integrated on the chip.
The invention also discloses a kind of plasm TV pointer, described plasm TV pointer comprises above-mentioned photosignal change-over circuit; The described photosignal change-over circuit of this plasm TV pointer converts the light signal of input can be sent corresponding Bluetooth signal to the outside by the signal of telecommunication of the correct identification of processor to.
This photosignal change-over circuit that the utility model is disclosed comprises: photodiode, current-voltage conversion and amplifying circuit and shaping circuit; Described current-voltage conversion and amplifying circuit comprise operational amplifier one and feedback circuit one; Wherein, the plus earth of photodiode, negative pole connects the inverting input of operational amplifier one; The output of one termination operational amplifier one of feedback circuit one, the inverting input of another termination operational amplifier one; The positive input end grounding of operational amplifier one; The output of operational amplifier one is connected with the input of shaping circuit; Photodiode is used for converting the light signal that receives to current signal; Current-voltage conversion and amplifying circuit are used for and will convert voltage signal to by the current signal of photodiode output, and amplify, and obtain first voltage signal; Shaping circuit is used for and will converts digital signal to by first voltage signal of current-voltage conversion and amplifying circuit output.The technology side of this photosignal change-over circuit has effectively suppressed electromagnetic interference, and can identify correctly, reliably, timely and the signal of handling different brightness, or even the bigger luminance signal of span.
Description of drawings
The structured flowchart of the photosignal change-over circuit that Fig. 1 provides for the utility model embodiment one.
The circuit diagram of the photosignal change-over circuit that Fig. 2 provides for the utility model embodiment one.
The structured flowchart of the photosignal change-over circuit that Fig. 3 provides for the utility model embodiment two and embodiment three.
The circuit diagram of the photosignal change-over circuit that Fig. 4 provides for the utility model embodiment two.
Embodiment
Core concept of the present utility model provides a kind of photosignal change-over circuit, and this photosignal change-over circuit comprises: photodiode, current-voltage conversion and amplifying circuit, shaping circuit; Described current-voltage conversion and amplifying circuit comprise operational amplifier one and feedback circuit one; Wherein, the plus earth of photodiode, negative pole connects the inverting input of operational amplifier one; The output of one termination operational amplifier one of feedback circuit one, the inverting input of another termination operational amplifier one; The positive input end grounding of operational amplifier one; The output of operational amplifier one is connected with the input of shaping circuit; Photodiode is used for converting the light signal that receives to current signal; Current-voltage conversion and amplifying circuit are used for and will convert voltage signal to by the current signal of photodiode output, and amplify, and obtain first voltage signal; Shaping circuit is used for and will converts digital signal to by first voltage signal of current-voltage conversion and amplifying circuit output.
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing the utility model execution mode is described in further detail.
The structured flowchart of the photosignal change-over circuit that Fig. 1 provides for the utility model embodiment one.
The circuit diagram of the photosignal change-over circuit that Fig. 2 provides for the utility model embodiment one.
Referring to Fig. 1, the disclosed photosignal change-over circuit of the utility model comprises: photodiode 101, current-voltage conversion and amplifying circuit 102 and shaping circuit 103.Referring to Fig. 2, current-voltage conversion and amplifying circuit 102 comprise operational amplifier 1 and feedback circuit one, in embodiment of the present utility model, feedback circuit one is made of resistance R 1, resistance R 2, resistance R 4, resistance R 1 and resistance R 2 series connection, resistance R 4 links to each other with corresponding contact 204, and resistance R 1, resistance R 2 and resistance R 4 are connected the feedback circuit one that the back forms the T type, make current-voltage conversion and amplifying circuit 102 have very high gain.Capacitor C 1 links to each other with feedback circuit one, and concrete connected mode plays feedback regulation phase place and frequency-selecting referring to Fig. 2.Shaping circuit 103 mainly is made of operational amplifier 3 203 and peripheral circuit, peripheral circuit is made of resistance R 14, resistance R 16, capacitor C 10, resistance R 12, resistance R 11, capacitor C 8 and three external power supply VCC, because peripheral circuit is not emphasis of the present utility model, therefore be not described in detail at this, annexation is referring to Fig. 2 in detail.Wherein, the photodiode among Fig. 1 101 is the photodiode 202 among Fig. 2.Referring to Fig. 2, the plus earth of photodiode 202, negative pole connects the inverting input of operational amplifier 1; The output of one termination operational amplifier 1 of feedback circuit one, the inverting input of another termination operational amplifier 1; The positive input end grounding of operational amplifier 1, the output of operational amplifier 1 is connected with the input of shaping circuit 103, and the output that is specially operational amplifier 1 here links to each other with the inverting input of operational amplifier 3 203; Photodiode 202 is used for converting the light signal that receives to current signal; Current-voltage conversion and amplifying circuit 102 are used for and will convert voltage signal to by the current signal of photodiode 101 outputs, and amplify, and obtain first voltage signal; Shaping circuit 103 is used for and will converts digital signal to by first voltage signal of current-voltage conversion and amplifying circuit 102 outputs.In this circuit, the plus earth of photoelectric diode 202 is lacked principle negative pole and the earth potential equipotentiality of photodiode 202 as can be known according to the void of operational amplifier, also is equivalent to ground connection, because the both positive and negative polarity of photoelectric diode 202 is earth potential, so its ability that suppresses electromagnetic interference is improved.Current-voltage conversion and amplifying circuit 102 can provide very high gain, can compatible very weak signal.
Referring to Fig. 1 and Fig. 2, this photosignal change-over circuit also comprises: processor 104 and gain control circuit 1; The first level adjustment interface 205 and digital signal interface 206 are arranged on the described processor 104, the digital signal interface 206 of processor 104 links to each other with the output of shaping circuit 103, here, the digital signal interface 206 that is specially processor links to each other with an end of resistance R 14, the other end of resistance R 14 links to each other with the output of operational amplifier 3 203, and the first level adjustment interface 205 of processor 104 links to each other with a corresponding end of gain control circuit one; The other end of gain control circuit one links to each other with the corresponding tie point 204 of feedback circuit one.Processor 104 is used for by the first level adjustment interface, 205 output high level or low levels; And be used for making corresponding operating to being handled by the digital signal of shaping circuit 103 outputs.Gain control circuit one is used for making that the gain of current-voltage conversion and amplifying circuit 102 is low gain A when the first level adjustment interface, 205 output low levels of processor 104 1LWhen the first level adjustment interface, the 205 output high level of processor 104, make that the gain of current-voltage conversion and amplifying circuit 102 is high-gain A 1H
Referring to Fig. 1 and Fig. 2, in embodiment one of the present utility model, gain control circuit one comprises field effect transistor one Q1 and resistance R 3, also comprise capacitor C 7 and resistance R 6 wherein, one end ground connection of capacitor C 7, one end ground connection of resistance R 6, the grid of field effect transistor one Q1 links to each other with the first level adjustment interface 205 of processor 104, also the other end with capacitor C 7 links to each other, also the other end with resistance R 6 links to each other, the source ground of field effect transistor one Q1, the drain electrode of field effect transistor one Q1 links to each other with an end of resistance R 3, and the other end of resistance R 3 links to each other with the corresponding tie point 204 of feedback circuit one.When the first level adjustment interface, 205 output low levels of processor 104, the grid of field effect transistor one Q1 is low level, makes that the gain of current-voltage conversion and amplifying circuit 102 is low gain A 1LWhen the first level adjustment interface 205 of processor 104 was exported high level, the grid of field effect transistor one Q1 was high level, makes that the gain of current-voltage conversion and amplifying circuit 102 is high-gain A 1HGain control circuit one can realize gaining 2 grades adjustable, and the brightness of compatible different plasm TVs simultaneously, and then 2 grades of photosignal change-over circuit realization gains that make the utility model embodiment one provide are adjustable, and the brightness of compatible different plasm TVs simultaneously.Below be the low gain A of current-voltage conversion and amplifying circuit 1LWith high-gain A 1HThe computing formula of theoretical value:
A 1 L = ( R 1 + R 2 + R 1 × R 2 R 4 )
A 1 H = ( R 1 + R 2 + R 1 × R 2 R 3 / / R 4 )
Here, the R in the above-mentioned formula 1, R 2, R 3And R 4Be respectively the resistance value of resistance R 1 among Fig. 2, resistance R 2, resistance R 3 and resistance R 4.R3//R4 is the resistance value after resistance R 3 and resistance R 4 parallel connections among Fig. 2 in the formula.
Referring to Fig. 1 and Fig. 2, in embodiment one of the present utility model, current-voltage conversion and amplifying circuit 102 also comprise by a resistance R 5 and the high-pass filtering circuit that capacitor C 2 is formed; One end of capacitor C 2 links to each other with the output of operational amplifier 1, the other end of capacitor C 2 links to each other with the input of shaping circuit 103, the other end of capacitor C 2 also links to each other with an end of resistance R 5, the other end ground connection of resistance R 5, here, be specially capacitor C 2 and link to each other with the inverting input of operational amplifier 3 203, the other end of capacitor C 2 also is connected with an end of resistance R 5, the other end ground connection of resistance R 5.Here, high-pass filtering circuit is used for the low-frequency noise that filtering is mixed in first voltage signal.
Referring to Fig. 2, in embodiment one of the present utility model, current-voltage conversion and amplifying circuit 102 also comprise the π type filter circuit of being made up of capacitor C 5, capacitor C 4 and resistance R 15; One end of resistance R 15 links to each other with an end of power supply VCC and capacitor C 5, capacitor C 5 other end ground connection; The other end of resistance R 15 links to each other with the power positive end of operational amplifier 1, the power cathode end ground connection of operational amplifier 1; The other end of resistance R 15 also links to each other with an end of capacitor C 4, the other end ground connection of capacitor C 4.Here, π type filter circuit is used for the filter out power noise, makes photosignal change-over circuit that the utility model embodiment one provides improve the inhibition ability of power noise.
The structured flowchart of the photosignal change-over circuit that Fig. 3 provides for the utility model embodiment two.
The circuit diagram of the photosignal change-over circuit that Fig. 4 provides for the utility model embodiment two.
Referring to Fig. 3, below be the embodiment two of the photosignal change-over circuit that provides of the utility model.Embodiment two has increased voltage amplifier circuit 301 and gain control circuit 2 302 on the basis of above-described embodiment one.The input of voltage amplifier circuit 301 links to each other with the output of current-voltage conversion with amplifying circuit 102, and the output of voltage amplifier circuit 301 links to each other with the input of shaping circuit 103.Gain control circuit 2 302 links to each other with the second level adjustment interface of processor 104, and gain control circuit 302 links to each other with voltage amplifier circuit 301.
Referring to Fig. 3 and Fig. 4, in embodiment two, the photosignal change-over circuit that the utility model provides also comprises: voltage amplifier circuit 301; This voltage amplifier circuit 301 comprises operational amplifier 2 403 and feedback circuit two; Feedback circuit two is made of resistance R 8 and resistance R 7.Capacitor C 3 links to each other with feedback circuit two, and concrete connected mode plays feedback regulation phase place and frequency-selecting referring to Fig. 4.One end of feedback circuit two links to each other with the inverting input of operational amplifier 2 403, the other end of feedback circuit two links to each other with the output of operational amplifier 2 403, in embodiment two of the present utility model, be specially, one end of resistance R 8 links to each other with an end of resistance R 7, one end of resistance R 8 also links to each other with the inverting input of operational amplifier 2 403, the other end ground connection of resistance R 7, and the other end of resistance R 8 links to each other with the output of operational amplifier 2 403.The normal phase input end of operational amplifier 2 403 links to each other with the output of amplifying circuit with current-voltage conversion, and the output of operational amplifier 2 403 links to each other with the input of shaping circuit.Operational amplifier 2 403 and feedback circuit two make voltage amplifier circuit that very high gain can be provided, can compatible very weak signal, and then the photosignal change-over circuit that makes the utility model embodiment two provide can provide very high gain, can compatible very weak signal.
Referring to Fig. 3 and Fig. 4, in the photosignal change-over circuit that embodiment two of the present utility model provides, voltage amplifier circuit 301 also comprises by a resistance R 9 and the low-pass filter circuit that capacitor C 6 forms; One end of resistance R 9 links to each other with an end of feedback circuit two, the other end of resistance R 9 links to each other with an end of capacitor C 6, the other end of resistance R 9 also links to each other with the input of shaping circuit 103, the other end ground connection of capacitor C 6, here, an end that is specially resistance R 9 links to each other with an end of resistance R 8, one end of resistance R 9 also links to each other with the output of operational amplifier 2 403, the other end of resistance R 9 links to each other with an end of capacitor C 6, the other end of resistance R 9 also links to each other with the inverting input of operational amplifier 3 203, the other end ground connection of capacitor C 6.Low-pass filter circuit; Be used for the low-frequency noise that filtering is mixed in the voltage signal of being exported by current-voltage conversion and amplifying circuit 102.
High-pass filtering circuit in current-voltage conversion and the amplifying circuit 102 and the low-pass filter circuit in the voltage amplifier circuit 301 have formed bandwidth-limited circuit, can effectively suppress the outer noise of effective band.
Referring to Fig. 3 and Fig. 4, in the embodiment two of the photosignal change-over circuit that the utility model provides, also comprise a gain control circuit 2 302, the corresponding tie point 402 of feedback circuit two links to each other with gain control circuit 2 302; Wherein, gain control circuit 2 302 comprises field effect transistor two Q2 and resistance R 10, also comprises capacitor C 9 and resistance R 13; Here, one end ground connection of capacitor C 9, one end ground connection of resistance R 13, the grid of field effect transistor two Q2 links to each other with the second level adjustment interface 401 of processor 104, also the other end with capacitor C 9 links to each other, and also the other end with resistance R 13 links to each other, the source ground of field effect transistor two Q2, the drain electrode of field effect transistor two Q2 links to each other with an end of resistance R 10, and the other end of resistance R 10 links to each other with the corresponding tie point 402 of feedback circuit two.When the second level adjustment interface, 401 output low levels of processor 104, the grid of field effect transistor two Q2 is low level, makes that the gain of voltage amplifier circuit 104 is low gain A 2LWhen the second level adjustment interface 401 of processor 104 was exported high level, the grid of field effect transistor two Q2 was high level, makes that the gain of voltage amplifier circuit 301 is high-gain A 2HGain control circuit two can realize gaining 2 grades adjustable, and the brightness of compatible different plasm TVs simultaneously.Below be the low gain A of voltage amplifier circuit 2LWith high-gain A 2HThe computing formula of theoretical value:
A 2 L = ( 1 + R 8 R 7 )
A 2 H = ( 1 + R 8 R 10 / / R 7 )
Here, the R in the above-mentioned formula 7, R 8And R 10Be respectively the resistance value of resistance R 7 among Fig. 4, resistance R 8 and resistance R 10, R in the formula 10//R 7Be the resistance value after resistance R among Fig. 4 10 and resistance R 7 parallel connections.
In the embodiment two of utility model, have gain control circuit one and gain control circuit two, and then make the photosignal change-over circuit of the utility model embodiment two realized 4 grades adjustable, these 4 grades are respectively:
Current-voltage conversion and amplifying circuit are low gain A 1L, voltage amplifier circuit is low gain A 2L
Current-voltage conversion and amplifying circuit are high-gain A 1H, voltage amplifier circuit is low gain A 2L
Current-voltage conversion and amplifying circuit are low gain A 1L, voltage amplifier circuit is high-gain A 2H
Current-voltage conversion and amplifying circuit are high-gain A 1H, voltage amplifier circuit is high-gain A 2H
In an embodiment of the present utility model, operational amplifier 1 and operational amplifier 2 403 are integrated on the chip.
Photosignal change-over circuit among embodiment one or the embodiment two can also be applied in the plasm TV pointer.This plasm TV pointer converts to and can be sent corresponding Bluetooth signal to the outside by the signal of telecommunication of the correct identification of processor by the light signal of this photosignal change-over circuit with input.The principle of luminosity of utility model plasm TV has determined that its screen periphery has very strong electromagnetic interference, the plasma screen brightness difference of different model, and same plasma screen As time goes on, brightness is also in constantly decay, plasm TV pointer in the utility model is owing to the photosignal change-over circuit that has adopted among embodiment one or the embodiment two, make plasm TV pointer of the present utility model can effectively suppress electromagnetic interference, can be correctly, reliably, output point coordinate timely.
In sum, the photosignal change-over circuit that provides of the utility model has following advantage.
1, because the positive and negative level of photodiode is earth potential, makes that photoelectric diode has stronger anti-electromagnetic interference capability in the photosignal change-over circuit of the present utility model.
2, owing to have current-voltage conversion and amplifying circuit in the photosignal change-over circuit, can there be voltage amplifier circuit, these two circuit all can provide very big gain, can compatible very weak signal, and then make photosignal change-over circuit of the present utility model that very big gain can be provided, can compatible very weak signal.
3, owing to exist current-voltage conversion and amplifying circuit to adopt ∏ type filter circuit in the photosignal change-over circuit, the noise of this circuit in can filter out power, and then make the restraint raising of photosignal change-over circuit of the present utility model to power supply noise.
4, owing to have gain control circuit one in the photosignal change-over circuit, can there be gain control circuit two, makes that the gain of photosignal change-over circuit of the present utility model is adjustable, the light characteristic of compatible different plasm TVs.When having gain control circuit one and gain control circuit two simultaneously in the photosignal change-over circuit, make that 4 grades of the gains of photosignal change-over circuit of the present utility model are adjustable, the light characteristic of compatible different plasm TVs.
5, owing to have high-pass filtering circuit in the photosignal change-over circuit, can there be low-pass filter circuit, make photosignal change-over circuit of the present utility model can filtering be mixed in the high-frequency noise in the signal of telecommunication, when high-pass filtering circuit and low-pass filter circuit exist simultaneously, make photosignal change-over circuit of the present utility model have the bandpass filtering network, effectively the outer noise of rejection band.
The above is preferred embodiment of the present utility model only, is not for limiting protection range of the present utility model.All any modifications of within spirit of the present utility model and principle, doing, be equal to replacement, improvement etc., all be included in the protection range of the present utility model.

Claims (10)

1. a photosignal change-over circuit is characterized in that, described photosignal change-over circuit comprises: photodiode, current-voltage conversion and amplifying circuit and shaping circuit; Described current-voltage conversion and amplifying circuit comprise operational amplifier one and feedback circuit one;
Wherein, the plus earth of photodiode, negative pole connects the inverting input of operational amplifier one; The output of one termination operational amplifier one of feedback circuit one, the inverting input of another termination operational amplifier one; The positive input end grounding of operational amplifier one; The output of operational amplifier one is connected with the input of shaping circuit;
Photodiode is used for converting the light signal that receives to current signal;
Current-voltage conversion and amplifying circuit are used for and will convert voltage signal to by the current signal of photodiode output, and amplify, and obtain first voltage signal;
Shaping circuit is used for and will converts digital signal to by first voltage signal of current-voltage conversion and amplifying circuit output.
2. a kind of photosignal change-over circuit according to claim 1 is characterized in that, described photosignal change-over circuit also comprises: processor and gain control circuit one; First level adjustment interface and the digital signal interface arranged on the described processor; The digital signal interface of processor links to each other with the output of shaping circuit, and the first level adjustment interface of processor links to each other with a corresponding end of gain control circuit one; The other end of gain control circuit one links to each other with the corresponding tie point of feedback circuit one;
Processor is used for by first level adjustment interface output high level or low level; And be used for making corresponding operating to being handled by the digital signal of shaping circuit output;
Gain control circuit one is used for making that the gain of current-voltage conversion and amplifying circuit is low gain when the first level adjustment interface output low level of processor; When the first level adjustment interface output high level of processor, make that the gain of current-voltage conversion and amplifying circuit is high-gain.
3. a kind of photosignal change-over circuit according to claim 2, it is characterized in that, described gain control circuit one comprises field effect transistor one and resistance, wherein, the grid of field effect transistor one links to each other with the first level adjustment interface of processor, the source ground of field effect transistor one, the drain electrode of field effect transistor one links to each other with an end of resistance, and the other end of resistance links to each other with the corresponding tie point of feedback circuit one.
4. a kind of photosignal change-over circuit according to claim 1 is characterized in that, described current-voltage conversion and amplifying circuit also comprise by a resistance and the high-pass filtering circuit that electric capacity is formed; One end of described electric capacity links to each other with the output of operational amplifier one, and the other end of described electric capacity links to each other with the input of shaping circuit, and the other end of described electric capacity also is connected with an end of described resistance, the other end ground connection of described resistance.
5. a kind of photosignal change-over circuit according to claim 1 is characterized in that, described current-voltage conversion and amplifying circuit also comprise by two electric capacity and the filter circuit that resistance is formed; An end of one of them electric capacity links to each other the other end ground connection of this electric capacity in one end of described resistance and power supply and described two electric capacity; The other end of described resistance links to each other with the power positive end of operational amplifier one, the power cathode end ground connection of operational amplifier one; The other end of described resistance also with described two electric capacity in wherein an end of another electric capacity link to each other the other end ground connection of this electric capacity.
6. a kind of photosignal change-over circuit according to claim 2 is characterized in that, described photosignal change-over circuit also comprises: voltage amplifier circuit; This voltage amplifier circuit comprises operational amplifier two and feedback circuit two;
One end of feedback circuit two links to each other with the inverting input of operational amplifier two, and the other end links to each other with the output of operational amplifier two; The normal phase input end of operational amplifier two links to each other with the output of amplifying circuit with current-voltage conversion, and the output of operational amplifier two links to each other with the input of shaping circuit.
7. a kind of photosignal change-over circuit according to claim 6 is characterized in that, described voltage amplifier circuit also comprises a gain control circuit two; Also has the second level adjustment interface on the described processor;
The corresponding tie point of described feedback circuit two links to each other with gain control circuit two; Wherein, gain control circuit two comprises field effect transistor two and resistance; Here, the grid of field effect transistor two links to each other with the second level adjustment interface of processor, the source ground of field effect transistor two, and the drain electrode of field effect transistor two links to each other with an end of resistance, and the other end of resistance links to each other with feedback circuit two corresponding tie points.
8. a kind of photosignal change-over circuit according to claim 6 is characterized in that, described voltage amplifier circuit also comprises by a resistance and the low-pass filter circuit that electric capacity forms; One end of described resistance links to each other with the output of operational amplifier two, and the other end of described resistance links to each other with the input of shaping circuit, and the other end of described resistance also links to each other with an end of described electric capacity, the other end ground connection of described electric capacity.
9. a kind of photosignal change-over circuit according to claim 6 is characterized in that, described operational amplifier one and described operational amplifier two are integrated on the chip.
10. a plasm TV pointer is characterized in that, described plasm TV pointer comprises as any described photosignal change-over circuit in the claim 1 to 9;
The plasm TV pointer converts to and can be sent corresponding Bluetooth signal to the outside by the signal of telecommunication of the correct identification of processor by the light signal of described photosignal change-over circuit with input.
CN 201220677949 2012-12-10 2012-12-10 Photoelectric signaling conversion circuit and plasma television touch control pen Expired - Fee Related CN203135846U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103036553A (en) * 2012-12-10 2013-04-10 青岛歌尔声学科技有限公司 Photoelectric signal switching circuit and plasma television stylus
CN106849893A (en) * 2013-12-24 2017-06-13 歌尔科技有限公司 Variable-gain amplifying circuit and implementation method, signal processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103036553A (en) * 2012-12-10 2013-04-10 青岛歌尔声学科技有限公司 Photoelectric signal switching circuit and plasma television stylus
CN103036553B (en) * 2012-12-10 2015-07-15 青岛歌尔声学科技有限公司 Photoelectric signal switching circuit and plasma television stylus
CN106849893A (en) * 2013-12-24 2017-06-13 歌尔科技有限公司 Variable-gain amplifying circuit and implementation method, signal processing apparatus

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