CN203084112U - High/low temperature test device of non-contact communication chips - Google Patents
High/low temperature test device of non-contact communication chips Download PDFInfo
- Publication number
- CN203084112U CN203084112U CN 201220754719 CN201220754719U CN203084112U CN 203084112 U CN203084112 U CN 203084112U CN 201220754719 CN201220754719 CN 201220754719 CN 201220754719 U CN201220754719 U CN 201220754719U CN 203084112 U CN203084112 U CN 203084112U
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- low temperature
- test
- impedance matching
- test probe
- shielding box
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Abstract
The utility model relates to a high/low temperature test device of non-contact communication chips which comprise but are not limited to high-frequency contactless card chips and non-contact card reader chips. The high/low temperature test device is composed of sampling contacts, an impedance matching and amplitude adjusting module, wires, and test probes; tail ends of the test probes are connected with the wires; front portions of the test probes are connected with radio-frequency signal output ports of tested chips; one end of the impedance matching and amplitude adjusting module is connected with the wires; and the other end of the impedance matching and amplitude adjusting module is connected with the sampling contacts.
Description
Technical field
The utility model relates to the testing authentication field, proposes the high low temperature test device of a kind of contactless communication chip, especially high band contactless communication chip.
Background technology
Along with the propelling that Internet of Things is used, contactless communication equipment increases fast as the demand of the contactless smart card of 13.56MHz, and the exploitation of contactless integrated circuit chip and the work of testing authentication are also more and more.In the existing testing authentication equipment, for the testing authentication of contactless integrated circuit chip, be based on the radio-frequency field that emission has carrier signal, the contactless integrated circuit chip arrives the radio-frequency field energy by antenna induction, and, reach test purpose by radio-frequency field and testing authentication devices exchange information.
In the testing authentication of contactless integrated circuit chip, when carrying out the casing build-in test of high low temperature, owing to the requirement of above method of testing to the space, once little with quantitation, testing efficiency is low at present, and test environment is big to the interference of radio-frequency field, the test result instability.
The utility model content
The purpose of this utility model is to provide the high low temperature test device of a kind of contactless communication chip (including, but not limited to high frequency non-contact card chip and contactless card reader chip), under the prerequisite of the original communication pattern that guarantees tested noncontact chip, solve radio-frequency field and be subjected to influence, the space-constrained problem of metal, other radiofrequency signal on every side, in communication environment more abominable for radio communication, improve the efficient of testing authentication and stability as a result.
High low temperature test device described in the utility model is that the measured signal at the chip under test sample is radiofrequency signal, draws measured signal by high low temperature test device.Described high low temperature test device is made up of sampling contact, impedance matching and amplitude adjustment module, lead, the test probe of measured signal.Described test probe can obtain measured signal by the mode of contact, also can respond to measured signal by the mode of noncontact coupling.The test probe end is connected on the described lead, and the test probe front portion is connected on the radiofrequency signal output port of chip under test.Described impedance matching and amplitude adjustment module one end are connected on the described lead, and the other end is connected on the described sampling contact.
Test probe can contact with the chip under test sample by test probe, obtains measured signal; Also can obtain measured signal by the mode of induction coupling, the size of test probe can be regulated according to the size of chip under test sample.Chip under test sample and test probe can be put in the shielding box.The skin of shielding box is made of metal, and hole is left in the side, is used for lead and passes through; The internal layer of shielding box is a magnetic shielding material, and hole is reserved in side and outer hole corresponding position.
When using high low temperature test device to carry out high low-temperature test, at first described chip under test sample is connected with test probe, is positioned in the high-low temperature chamber.Described lead is drawn by the fairlead of high-low temperature chamber, is connected in described impedance matching and amplitude adjustment module.Described impedance matching and amplitude adjustment module are connected to described sampling contact.So far, high low temperature test device connection is finished.
Described chip under test sample is connected with test probe, can adopt the mode of direct contact to connect, and also can connect by the mode of induction coupling.When connecting,, can increase shielding box in order to reduce the influence of environment by the induction coupling scheme.The skin of shielding box is made of metal, and hole is left in the side, be used for the convection current of box inner air and outer air, and lead is drawn.The internal layer of shielding box is a magnetic shielding material, is used to reduce the influence of metal pair internal radio frequency field, and hole need be reserved in side and outer hole corresponding position, is used for lead and passes through.
After described high low temperature test device connection is finished, before loading probe temperature, need carry out the adjusting of impedance matching and amplitude, make it meet test request the signal of described sampling contact.
After adjusting is finished, can open high-low temperature chamber and test, measured signal is obtained in described sampling contact.
For improving testing efficiency, a plurality of described high low temperature test devices can be used simultaneously and test, can not produce interference each other, reach the purpose that many chip under test are tested simultaneously.
Description of drawings
Fig. 1 represents a kind of concrete form of device of the present utility model.
Fig. 2 represents the another kind of concrete form of device of the present utility model.
Fig. 3 represents specific embodiment of the present utility model.
Embodiment
In the following detailed description, the accompanying drawing 3 of the specific embodiment that wherein the utility model that reference is described by illustrated mode is implemented.This embodiment is by enough detailed description, so that those skilled in the art can implement the utility model.But the following detailed description should not be construed limited significance.
In the accompanying drawing 3 of the utility model embodiment, demonstration be four situations that the chip under test sample is tested simultaneously.Test probe 4 is placed in the shielding box 5, the test card 8 of also having placed chip under test sample 7 (contactless card reader chip) in the shielding box 5 and having communicated by letter with the chip under test sample.Shielding box 5 is placed in the high-low temperature chamber 6.Test probe 4 links to each other with amplitude adjustment module 2 with the impedance matching of high-low temperature chamber 6 outsides by lead 3, and impedance matching links to each other with sampling contact 1 with amplitude adjustment module 2 again.
To install and after the chip under test sample connected, operation chip under test sample by the signal on the oscilloscope measurement sampling contact 1, was adjusted to initial amplitude with signal amplitude, the amplitude of measuring when promptly not inserting proving installation.
After the signal of sampling on the contact 1 adjusted, close the high-low temperature chamber door, start power supply, parameters such as the temperature that needs test or temperature range are set, treat that the temperature inside the box reaches test request after, on sampling contact 1, signal is measured and is analyzed.
Claims (4)
1. the high low temperature test device of a contactless communication chip is characterized in that described device is made up of sampling contact, impedance matching and amplitude adjustment module, lead, test probe; The test probe end is connected on the described lead, and the test probe front portion is connected on the radiofrequency signal output port of chip under test; Described impedance matching and amplitude adjustment module one end are connected on the described lead, and the other end is connected on the described sampling contact.
2. device as claimed in claim 1, it is characterized in that described test probe can obtain measured signal by the mode of contact, also can respond to measured signal by the mode of noncontact coupling, when connecting by the induction coupling scheme, can increase shielding box, chip under test and test probe are put in the shielding box, and shielding box is positioned in the high-low temperature chamber; Lead is drawn by the fairlead of high-low temperature chamber, is connected in described impedance matching and amplitude adjustment module; Impedance matching and amplitude adjustment module are connected to described sampling contact.
3. the high low temperature test device of a kind of contactless communication chip according to claim 1 is characterized in that the size of test probe can be regulated according to the size of chip under test.
4. device according to claim 2 is characterized in that the skin of shielding box is made of metal, and hole is left in the side; The internal layer of shielding box is a magnetic shielding material, and hole is reserved in side and outer hole corresponding position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220754719 CN203084112U (en) | 2012-12-28 | 2012-12-28 | High/low temperature test device of non-contact communication chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220754719 CN203084112U (en) | 2012-12-28 | 2012-12-28 | High/low temperature test device of non-contact communication chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203084112U true CN203084112U (en) | 2013-07-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220754719 Expired - Lifetime CN203084112U (en) | 2012-12-28 | 2012-12-28 | High/low temperature test device of non-contact communication chips |
Country Status (1)
| Country | Link |
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| CN (1) | CN203084112U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913646A (en) * | 2012-12-28 | 2014-07-09 | 北京中电华大电子设计有限责任公司 | High/ low temperature test device for non-contact communication chip |
| CN106970281A (en) * | 2017-03-31 | 2017-07-21 | 贵州航天电子科技有限公司 | A kind of high-low temperature tester |
-
2012
- 2012-12-28 CN CN 201220754719 patent/CN203084112U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913646A (en) * | 2012-12-28 | 2014-07-09 | 北京中电华大电子设计有限责任公司 | High/ low temperature test device for non-contact communication chip |
| CN106970281A (en) * | 2017-03-31 | 2017-07-21 | 贵州航天电子科技有限公司 | A kind of high-low temperature tester |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 102209 Beijing, Beiqijia, the future of science and technology in the south area of China electronic network security and information technology industry base C building, Patentee after: BEIJING CEC HUADA ELECTRONIC DESIGN Co.,Ltd. Address before: 100102 Beijing City, Chaoyang District Lize two Road No. 2, Wangjing science and Technology Park A block five layer Patentee before: BEIJING CEC HUADA ELECTRONIC DESIGN Co.,Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20130724 |
|
| CX01 | Expiry of patent term |