CN203039658U - Low-pass high-isolation intelligent radio frequency switch - Google Patents
Low-pass high-isolation intelligent radio frequency switch Download PDFInfo
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- CN203039658U CN203039658U CN 201220709007 CN201220709007U CN203039658U CN 203039658 U CN203039658 U CN 203039658U CN 201220709007 CN201220709007 CN 201220709007 CN 201220709007 U CN201220709007 U CN 201220709007U CN 203039658 U CN203039658 U CN 203039658U
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Abstract
The utility model discloses a low-pass high-isolation intelligent radio frequency switch. According to the utility model, balance between isolation performance and breakover performance of the radio frequency switch is realized by the use of a multiple field effect transistor, a power detection circuit and an electrostatic protection circuit. In the meantime, the low-pass high-isolation intelligent radio frequency switch can be used to provide other circuits with overvoltage early warning signals and the electrostatic protection function.
Description
Technical field
The present invention relates to the high isolated intelligent radio-frequency (RF) switch of a kind of low pass, belong to the radio-frequency (RF) switch field.
Background technology
Radio-frequency (RF) switch requires the resistance ratios under " opening " and "Off" state very high.In RF and the microwave frequency of reality, at the drain-source electrode capacitance in parallel with the resistance under the "Off" state, be the most important parameter that influences its performance.Be example with the single-pole double-throw switch (SPDT), add when cutting off bias voltage, isolate and the circuit that inserts loss can calculate with a linear circuit simulator.Along with the increase of frequency, the condensance of drain-gate capacitance is very big, and switch performances will descend.At present the problem that exists is that the little field-effect transistor isolation of size is better, but conduction property is relatively poor, and large-sized field-effect transistor conduction property better but isolation is relatively poor, and conduction property and the isolation performance of radio-frequency (RF) switch are difficult to balance.And in some high-power applications environment, the problem that radio-frequency (RF) switch has overvoltage to lose efficacy again.
Summary of the invention
Goal of the invention: the present invention proposes the high isolated intelligent radio-frequency (RF) switch of a kind of low pass, can take into account isolation performance and the conduction property of radio-frequency (RF) switch, and possesses over-voltage protecting function and electrostatic protection function.
Technical scheme: the technical solution used in the present invention is the high isolated intelligent radio-frequency (RF) switch of a kind of low pass, comprise the self-bias switches circuit of being formed by multi gate fet, the output of self-bias switches circuit is connected with power-sensing circuit, when this power-sensing circuit surpasses set point at the power of output, send alarm signal.First bias voltage source of self-bias switches circuit and the second bias voltage source place are provided with electrostatic discharge protective circuit, prevent that switch is owing to electrostatic influence lost efficacy.
As a further improvement on the present invention, described power-sensing circuit comprises first resistance that is connected with output, the other end of first resistance is connected to the collector electrode of first triode, first electric capacity is connected in parallel between the collector electrode and base stage of first triode, the base stage of first triode is connected with direct voltage source by the 22 resistance, the emitter of first triode is connected with second resistance with second electric capacity, the other end ground connection of second electric capacity and second resistance, the 4th resistance and the series connection of the 5th resistance, the other end of the 4th resistance is connected to direct voltage source, the 3rd resistance is connected in parallel between the common port of the emitter of first triode and the 4th resistance and the 5th resistance, and the warning output is connected the emitter of first triode.
Described electrostatic discharge protective circuit comprises second metal-oxide-semiconductor that drain electrode is connected with first bias voltage source; the 3rd metal-oxide-semiconductor that drain electrode is connected with the source electrode of second metal-oxide-semiconductor; the source ground of the 3rd metal-oxide-semiconductor; the 6th resistance is connected in parallel between the grid and source electrode of second metal-oxide-semiconductor, and the 7th resistance is connected in parallel between the grid and drain electrode of the 3rd metal-oxide-semiconductor.
The 4th metal-oxide-semiconductor that drain electrode is connected with second bias voltage source, the 5th metal-oxide-semiconductor that drain electrode is connected with the source electrode of the 4th metal-oxide-semiconductor, the source ground of the 5th metal-oxide-semiconductor, the 8th resistance are connected in parallel between the grid and source electrode of the 4th metal-oxide-semiconductor, and the 9th resistance is connected in parallel between the grid and drain electrode of the 5th metal-oxide-semiconductor.
Beneficial effect: the present invention has realized the balance of radio-frequency (RF) switch between isolation performance and conduction property by using multi gate fet.The overvoltage early warning signal is provided for simultaneously other circuit.
Description of drawings
Fig. 1 is the electrical block diagram of the high isolated intelligent radio-frequency (RF) switch of a kind of low pass of the present invention;
Fig. 2 is the S coefficient simulation result figure of the high isolated intelligent radio-frequency (RF) switch of a kind of low pass of the present invention;
Fig. 3 is warning output end voltage and the output power variation relation figure of the high isolated intelligent radio-frequency (RF) switch of a kind of low pass of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
As shown in Figure 1, the high isolated intelligent radio-frequency (RF) switch of low pass of the present invention mainly comprises self-bias switches circuit, electrostatic discharge protective circuit and three modules of power-sensing circuit.
The self-bias switches circuit has increased biasing circuit on the conventional radio frequency switch basis of being made of multiple-grid NMOS pipe T6～T9.The direct voltage of the first bias voltage source V1 is loaded into the grid that the 8th multiple-grid NMOS manages T8 by the tenth resistance R 10 and the 15 resistance R 15 of mutual series connection.The direct voltage of the first bias voltage source V1 is loaded into the grid that the 7th multiple-grid NMOS manages T7 by the 12 resistance R 12 and the 17 resistance R 17 of mutual series connection simultaneously.Because the 8th multiple-grid NMOS pipe T8 and the 7th multiple-grid NMOS pipe T7 have three grids respectively, so the 15 resistance R 15 and the 17 resistance R 17 are all composed in parallel by the resistance of three equivalences respectively, each resistance in parallel connects a grid.The direct voltage of the second bias voltage source V2 is loaded into the grid that the 9th multiple-grid NMOS manages T9 by the 11 resistance R 11 and the 16 resistance R 16 of mutual series connection.The direct voltage of the second bias voltage source V2 is loaded into the grid that the 6th multiple-grid NMOS manages T6 by the 13 resistance R 13 and the 14 resistance R 14 of mutual series connection simultaneously.Because the 9th multiple-grid NMOS pipe T9 and the 6th multiple-grid NMOS pipe T6 have three grids respectively, so the 16 resistance R 16 and the 14 resistance R 14 are all composed in parallel by the resistance of three equivalences respectively, each resistance in parallel connects a grid.This from the bias voltage source to the grid between two resistance of series connection, can play the effect of isolating radiofrequency signal and control signal.Input signal enters into radio-frequency (RF) switch by the 3rd capacitor C 3 and the 4th capacitor C 4 respectively from first input end Vin1 and the second input Vin2.Not have pressure drop in order allowing between the source-drain electrode of multiple-grid NMOS pipe, also to be parallel with the 18 resistance R 18, the 19 resistance R 19, the 20 resistance R 20 and the 21 resistance R 21 respectively between the source electrode of multiple-grid NMOS pipe T6～T9 and the drain electrode.These parallel resistor when the direct current biasing state, source electrode and drain electrode that can each multiple-grid of short circuit NMOS pipe.Because resistance value is 20,000 ohm, therefore described parallel resistor can't influence the isolation performance of switch.The source electrode of the 6th multiple-grid NMOS pipe T6 and the 7th multiple-grid NMOS pipe T7 is respectively by the 5th capacitor C 5 and the 6th capacitor C 6 ground connection.The self-bias switches circuit outputs to output end vo ut by the 7th capacitor C 7 with input signal.
Electrostatic discharge protective circuit comprises two identical static leakage circuit.One of them leadage circuit comprises the second metal-oxide-semiconductor T2 and the 3rd metal-oxide-semiconductor T3 that source drain is connected mutually, and is connected in parallel on the 6th resistance R 6 between the second metal-oxide-semiconductor T2 gate-source, is connected in parallel on the 7th resistance R 7 between the 3rd metal-oxide-semiconductor T3 grid drain electrode.The source ground of the 3rd metal-oxide-semiconductor T3, the drain electrode of the second metal-oxide-semiconductor T2 are connected to the first bias voltage source V1.Another leadage circuit comprises the 4th metal-oxide-semiconductor T4 and the 5th metal-oxide-semiconductor T5 that source drain is connected mutually, and is connected in parallel on the 8th resistance R 8 between the 4th metal-oxide-semiconductor T4 gate-source, is connected in parallel on the 9th resistance R 9 between the 5th metal-oxide-semiconductor T5 grid drain electrode.The source ground of the 5th metal-oxide-semiconductor T5, the drain electrode of the 4th metal-oxide-semiconductor T4 are connected to the second bias voltage source V2.
The collector electrode of the first triode T1 in the power-sensing circuit is connected to output end vo ut by first resistance R 1.Direct voltage source Vcc is connected to the base stage of the first triode T1 by the 22 resistance R 22, for first triode provides bias voltage.Be parallel with first capacitor C 1 between the base stage of the first triode T1 and collector electrode, it is kept apart direct voltage source Vcc with the output end vo ut signal that enters emitter.First capacitor C 1 and first resistance R 1 are formed the RC circuit of series connection, can optionally pass through the signal of output end vo ut according to the operating frequency of side circuit.Second resistance R 2 and second capacitor C 2 are connected in parallel between the emitter and ground of the first triode T1.One end of the 4th resistance R 4 is connected to direct voltage source Vcc, an end ground connection of the 5th resistance R 5.Mutually the 4th resistance R 4 of series connection and the 5th resistance R 5 constitute a potential-divider network, and according to its resistance ratio dividing potential drop, the common port of two resistance is reference voltage with the magnitude of voltage of direct voltage source Vcc.The 3rd resistance R 3 is connected in parallel on the common port of the 4th resistance R 4 and the 5th resistance R 5, and between the emitter of the first triode T1.Warning output Pdet is connected on the emitter of the first triode T1.The output signal of output end vo ut forms an output voltage at its collector electrode place after through the formed common-base amplifier of the first triode T1.Voltage difference between this output voltage and the described reference voltage can cause that the electric current by the 3rd resistance R 3 changes, thereby the voltage at the output Pdet place that causes reporting to the police changes, and provides a voltage signal relevant with output end vo ut power to subsequent conditioning circuit.According to the needs of side circuit, described reference voltage can change the described size of current of passing through the 3rd resistance R 3 with this by changing the 4th resistance R 4 and the 5th resistance R 5 is adjusted.Warning output Pdet place voltage can be adjusted according to the needs of subsequent conditioning circuit like this.
As shown in Figure 3, in ADS software, power-sensing circuit is carried out emulation, can see under the power 30dB condition of same output end vo ut, by different reference voltages is set, warning output Pdet can export different voltage, to adapt to the requirement of subsequent conditioning circuit.
As shown in Figure 2, carry out the emulation of S coefficient in ADS software, it is Term1 that output end vo ut is set, and first input end Vin1 is Term2, and the second input Vin2 is Term3.As shown in Figure 2, can see S (2,1) 1 and S(3,1) differ about 35 to 40dB between 2.Can realize isolation performance preferably at 5GHz with interior.S (2,1) 1 near 0dB, show that it has realized conduction property preferably when 1.5GHz is above.
Claims (3)
1. the high isolated intelligent radio-frequency (RF) switch of low pass is characterized in that, comprises the self-bias switches circuit of being made up of multi gate fet,
The output of self-bias switches circuit (Vout) is connected with power-sensing circuit, when this power-sensing circuit surpasses set point at the power of output (Vout), sends alarm signal;
First bias voltage source of self-bias switches circuit and the second bias voltage source place are provided with electrostatic discharge protective circuit, prevent that switch is owing to electrostatic influence lost efficacy.
2. the high isolated intelligent radio-frequency (RF) switch of low pass according to claim 1, it is characterized in that, described power-sensing circuit comprises first resistance (R1) that is connected with output (Vout), the other end of first resistance (R1) is connected to the collector electrode of first triode (T1), first electric capacity (C1) is connected in parallel between the collector electrode and base stage of first triode (T1), the base stage of first triode (T1) is connected with direct voltage source (Vcc) by the 22 resistance (R22), the emitter of first triode (T1) is connected with second resistance (R2) with second electric capacity (C2), the other end ground connection of second electric capacity (C2) and second resistance (R2), the 4th resistance (R4) and the 5th resistance (R5) series connection, the other end of the 4th resistance (R4) is connected to direct voltage source (Vcc), the 3rd resistance (R3) is connected in parallel between the common port of the emitter of first triode (T1) and the 4th resistance (R4) and the 5th resistance (R5), and warning output (Pdet) is connected the emitter of first triode (T1).
3. the high isolated intelligent radio-frequency (RF) switch of low pass according to claim 1 and 2, it is characterized in that, described electrostatic discharge protective circuit comprises second metal-oxide-semiconductor (T2) that drain electrode is connected with first bias voltage source (V1), the 3rd metal-oxide-semiconductor (T3) that drain electrode is connected with the source electrode of second metal-oxide-semiconductor (T2), the source ground of the 3rd metal-oxide-semiconductor (T3), the 6th resistance (R6) is connected in parallel between the grid and source electrode of second metal-oxide-semiconductor (T2), and the 7th resistance (R7) is connected in parallel between the grid and drain electrode of the 3rd metal-oxide-semiconductor (T3);
The 4th metal-oxide-semiconductor (T4) that drain electrode is connected with second bias voltage source (V2), the 5th metal-oxide-semiconductor (T5) that drain electrode is connected with the source electrode of the 4th metal-oxide-semiconductor (T4), the source ground of the 5th metal-oxide-semiconductor (T5), the 8th resistance (R8) is connected in parallel between the grid and source electrode of the 4th metal-oxide-semiconductor (T4), and the 9th resistance (R9) is connected in parallel between the grid and drain electrode of the 5th metal-oxide-semiconductor (T5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220709007 CN203039658U (en) | 2012-12-20 | 2012-12-20 | Low-pass high-isolation intelligent radio frequency switch |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220709007 CN203039658U (en) | 2012-12-20 | 2012-12-20 | Low-pass high-isolation intelligent radio frequency switch |
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| CN203039658U true CN203039658U (en) | 2013-07-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066977A (en) * | 2012-12-20 | 2013-04-24 | 南京佳立实通信科技有限公司 | Low-pass high-isolation intelligent radio frequency (RF) switch |
| CN103595385A (en) * | 2013-11-25 | 2014-02-19 | 中国科学院微电子研究所 | Radio frequency switch circuit of III-V group MOSFET device |
| CN105811947A (en) * | 2014-12-31 | 2016-07-27 | 上海摩波彼克半导体有限公司 | Radio frequency switch and multipath output selector |
| WO2017028510A1 (en) * | 2015-08-18 | 2017-02-23 | 中兴通讯股份有限公司 | Radio frequency switch circuit and radio frequency link |
-
2012
- 2012-12-20 CN CN 201220709007 patent/CN203039658U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066977A (en) * | 2012-12-20 | 2013-04-24 | 南京佳立实通信科技有限公司 | Low-pass high-isolation intelligent radio frequency (RF) switch |
| CN103066977B (en) * | 2012-12-20 | 2015-02-18 | 南京佳立实通信科技有限公司 | Low-pass high-isolation intelligent radio frequency (RF) switch |
| CN103595385A (en) * | 2013-11-25 | 2014-02-19 | 中国科学院微电子研究所 | Radio frequency switch circuit of III-V group MOSFET device |
| CN105811947A (en) * | 2014-12-31 | 2016-07-27 | 上海摩波彼克半导体有限公司 | Radio frequency switch and multipath output selector |
| CN105811947B (en) * | 2014-12-31 | 2019-07-02 | 展讯通信（上海）有限公司 | RF switch and demultiplexer |
| WO2017028510A1 (en) * | 2015-08-18 | 2017-02-23 | 中兴通讯股份有限公司 | Radio frequency switch circuit and radio frequency link |
| CN106470026A (en) * | 2015-08-18 | 2017-03-01 | 中兴通讯股份有限公司 | A kind of radio-frequency switch circuit and radio frequency link |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130703 Effective date of abandoning: 20150218 |
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| RGAV | Abandon patent right to avoid regrant |