CN113131911A - Radio frequency switch circuit, radio frequency switch chip and wireless communication equipment - Google Patents

Abstract

The invention discloses a radio frequency switch circuit, a radio frequency switch chip and wireless communication equipment, wherein the radio frequency switch circuit comprises N switch sub-circuits, and each switch sub-circuit comprises a series switch unit and a parallel switch unit; the switch sub-circuit further comprises a first feedback unit and/or a second feedback unit. According to the invention, the series switch unit outputs the radio frequency signal, and the parallel switch unit blocks the inactive radio frequency signal to the ground, so that the isolation degree of the switch is increased; the harmonic part in the signal is filtered by the feedback unit, so that the second harmonic and the third harmonic generated by the switch are reduced, the linearity of the switch is effectively increased, and the aim of increasing the maximum output power of the switch is fulfilled. In addition, the sizes of the series switch unit and the parallel switch unit are greatly reduced, so that the production cost is reduced, and the method has wide practical application prospect.

Description

Radio frequency switch circuit, radio frequency switch chip and wireless communication equipment

Technical Field

The invention relates to the technical field of circuit design, in particular to a radio frequency switch circuit, a radio frequency switch chip and wireless communication equipment.

Background

The radio frequency switch is mainly used for controlling a radio frequency signal transmission path and signal size and controlling the on-off of a radio frequency signal connection transmitting antenna, and is widely applied to the fields of wireless communication, measuring instruments, radar systems and the like at present.

At present, radio frequency switching circuits can basically meet radio frequency communication requirements; however, the existing radio frequency switch circuit generally has the problem that the isolation and linearity of the switch are not enough due to the conductive substrate and the excessive parasitic capacitance effect, so that the output power of the existing radio frequency switch circuit cannot meet higher use requirements.

Disclosure of Invention

The invention aims to overcome the defects that a radio frequency switch circuit in the prior art is low in linearity and output power and cannot meet actual use requirements, and provides the radio frequency switch circuit, a radio frequency switch chip and wireless communication equipment.

The invention solves the technical problems through the following technical scheme:

the invention provides a radio frequency switch circuit, which comprises N switch sub-circuits, wherein each switch sub-circuit corresponds to a radio frequency signal output end; wherein N is more than or equal to 1 and is an integer;

the switch sub-circuit comprises a series switch unit and a parallel switch unit;

the signal input end of the series switch unit is electrically connected with the radio frequency signal input end of the radio frequency switch circuit, the voltage end of the series switch unit is electrically connected with the first voltage input end, the signal output end of the series switch unit is respectively electrically connected with the radio frequency signal output end and the signal input end of the parallel switch unit, the voltage end of the parallel switch unit is electrically connected with the second voltage input end, and the signal output end of the parallel switch unit is grounded;

the series switch unit is used for outputting the radio frequency signal;

the parallel switch unit is used for blocking the inactive signal in the output radio frequency signal to the ground;

at the same time, only one of the N switch sub-circuits works, and the other N-1 switch sub-circuits do not work;

the switch sub-circuit further comprises a first feedback unit, one end of the first feedback unit is electrically connected with the signal output end of the series switch unit, and the other end of the first feedback unit is electrically connected with the voltage end of the series switch unit; and/or the presence of a gas in the gas,

the switch sub-circuit further comprises a second feedback unit, one end of the second feedback unit is electrically connected with the signal output end of the series switch unit, and the other end of the second feedback unit is electrically connected with the voltage end of the parallel switch unit.

Preferably, when the switch sub-circuit comprises a first feedback unit, the first feedback unit comprises a first inductance unit and a first capacitance unit;

one end of the first inductance unit is electrically connected with the signal output end of the series switch unit, the other end of the first inductance unit is electrically connected with one end of the first capacitance unit, and the other end of the first capacitance unit is electrically connected with the voltage end of the series switch unit.

Preferably, the first inductance unit includes a first inductance, the first capacitance unit includes a first capacitance, one end of the first inductance is electrically connected to one end of the first capacitance, the other end of the first inductance is electrically connected to the signal output end of the series switch unit, and the other end of the first capacitance is electrically connected to the voltage end of the series switch unit; or the like, or, alternatively,

the first inductance unit comprises at least two first inductances, and the first capacitance unit comprises at least two first capacitances;

every first inductance series connection, every first electric capacity series connection will be a plurality of after establishing ties the one end of first inductance is with a plurality of after establishing ties the one end electricity of first electric capacity is connected, and a plurality of after establishing ties the other end of first inductance with the signal output part electricity of series switch unit is connected, and a plurality of after establishing ties the other end of first electric capacity with the voltage end electricity of series switch unit is connected.

Preferably, when the switch sub-circuit comprises a second feedback unit, the second feedback unit comprises a second inductance unit and a second capacitance unit;

one end of the second inductance unit is electrically connected with the signal output end of the series switch unit, the other end of the second inductance unit is electrically connected with one end of the second capacitance unit, and the other end of the second capacitance unit is electrically connected with the voltage end of the parallel switch unit.

Preferably, the second inductance unit includes a second inductance, the second capacitance unit includes a second capacitance, one end of the second inductance is electrically connected to one end of the second capacitance, the other end of the second inductance is electrically connected to the signal output end of the series switch unit, and the other end of the second capacitance is electrically connected to the voltage end of the parallel switch unit; or the like, or, alternatively,

the second inductance unit comprises at least two second inductances, and the second capacitance unit comprises at least two second capacitances;

every the second inductance series connection, every the second electric capacity series connection will be a plurality of after establishing ties the one end of second inductance is with a plurality of after establishing ties the one end electricity of second electric capacity is connected, a plurality of after establishing ties the other end of second inductance with the signal output part electricity of series switch unit is connected, a plurality of after establishing ties the other end of second electric capacity with the voltage end electricity of parallel switch unit is connected.

Preferably, when the radio frequency switch circuit is an M-pole switch, the radio frequency switch circuit includes M radio frequency signal input terminals; wherein M is more than or equal to 1 and is an integer.

Preferably, the series switch unit is a first NMOS transistor (N-type metal-oxide semiconductor field effect transistor), a drain of the first NMOS transistor is electrically connected to the rf signal input terminal, a gate of the first NMOS transistor is electrically connected to the first voltage input terminal, and a source of the first NMOS transistor is electrically connected to the rf signal output terminal; or the like, or, alternatively,

the series switch unit is a first PMOS (P-type metal-oxide semiconductor field effect transistor), a source electrode of the first PMOS is electrically connected with the radio frequency signal input end, a grid electrode of the first PMOS is electrically connected with the first voltage input end, and a drain electrode of the first PMOS is electrically connected with the radio frequency signal output end.

Preferably, the parallel switch unit is a second NMOS transistor, a drain of the second NMOS transistor is electrically connected to the rf signal output terminal, a gate of the second NMOS transistor is electrically connected to the second voltage input terminal, and a source of the second NMOS transistor is grounded; or the like, or, alternatively,

the series switch unit is a second PMOS tube, a source electrode of the second PMOS tube is electrically connected with the radio frequency signal output end, a grid electrode of the second PMOS tube is electrically connected with the second voltage input end, and a drain electrode of the second PMOS tube is grounded.

Preferably, when the switch sub-circuit operates, the signal input end of the series switch unit inputs a radio frequency signal, the voltage end of the series switch unit inputs a high level, and the voltage end of the parallel switch unit inputs a low level.

The invention also provides a radio frequency switch chip, and the radio frequency switch equipment comprises the radio frequency switch circuit.

The invention also provides wireless communication equipment which comprises the radio frequency switch chip.

Preferably, the wireless communication device further comprises a control unit;

the control unit is electrically connected with the first voltage input end and the second voltage input end in each switch sub-circuit;

the control unit is used for controlling the input voltage of the first voltage input end and the second voltage input end according to a preset condition.

The positive progress effects of the invention are as follows:

the radio frequency switch circuit comprises N switch sub-circuits, wherein each switch sub-circuit is provided with a series switch unit, a parallel switch unit and a feedback unit, a radio frequency signal is output through the series switch unit, and an inactive radio frequency signal is blocked to the ground through the parallel switch unit, so that the isolation degree of the switch is increased; the input radio frequency signal is fed forward to a voltage end selectively through the feedback unit, and a harmonic part in the signal is filtered, so that the second harmonic and the third harmonic generated by the switch are reduced, the linearity of the switch is effectively increased, the maximum output power of the switch is increased, and the defect that the existing radio frequency switch circuit cannot meet higher use requirements is overcome; in addition, the sizes of the series switch unit and the parallel switch unit are greatly reduced, so that the production cost is reduced, and the method has wide practical application prospect.

Drawings

Fig. 1 is a schematic structural diagram of a radio frequency switch circuit according to embodiment 1 of the present invention.

Fig. 2 is a first circuit diagram of a radio frequency switch circuit according to embodiment 2 of the present invention.

Fig. 3 is a second circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 4 is a third circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 5 is a fourth circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 6 is a fifth circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 7 is a sixth circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 8 is a seventh circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 9 is an eighth circuit schematic diagram of the radio frequency switch circuit according to embodiment 2 of the present invention.

Fig. 10 is a ninth circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 11 is a tenth circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 12 is an eleventh circuit diagram of the rf switch circuit according to embodiment 2 of the present invention.

Fig. 13 is a twelfth circuit schematic diagram of the radio frequency switch circuit according to embodiment 2 of the present invention.

Fig. 14 is a schematic diagram of the output power of a conventional rf switch circuit.

Fig. 15 is a schematic diagram of the output power of the rf switch circuit according to embodiment 2 of the present invention.

Detailed Description

The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.

Example 1

As shown in fig. 1, the rf switch circuit of this embodiment includes N switch sub-circuits 1, where each switch sub-circuit 1 corresponds to one rf signal output terminal RFout; wherein N is more than or equal to 1 and is an integer.

When the radio frequency switch circuit is an M-blade switch, the radio frequency switch circuit comprises M radio frequency signal input ends RFin; wherein M is more than or equal to 1 and is an integer.

The switch sub-circuit 1 comprises a series switch unit 2 and a parallel switch unit 3;

specifically, a signal input end of the series switch unit 2 is electrically connected with a radio frequency signal input end RFin of the radio frequency switch circuit, a voltage end of the series switch unit 2 is electrically connected with a first voltage input end, a signal output end of the series switch unit 2 is electrically connected with a radio frequency signal output end RFout and a signal input end of the parallel switch unit 3, a voltage end of the parallel switch unit 3 is electrically connected with a second voltage input end, and a signal output end of the parallel switch unit 3 is grounded.

At the same time, only one switch sub-circuit 1 of the N switch sub-circuits 1 works, and other N-1 switch sub-circuits 1 do not work.

When the switch sub-circuit 1 works, a radio frequency signal is input to a signal input end of the series switch unit 2, a high level is input to a voltage end of the series switch unit 2, a low level is input to a voltage end of the parallel switch unit 3, the series switch unit 2 is used for outputting the radio frequency signal, and the parallel switch unit 3 is used for blocking an inactive signal in the output radio frequency signal to the ground, so that the isolation degree of the switch is increased.

The switch sub-circuit 1 further comprises a first feedback unit 4, one end of the first feedback unit 4 is electrically connected with the signal output end of the series switch unit 2, and the other end of the first feedback unit 4 is electrically connected with the voltage end of the series switch unit 2; and/or the presence of a gas in the gas,

the switch sub-circuit 1 further comprises a second feedback unit 5, one end of the second feedback unit 5 is electrically connected with the signal output end of the series switch unit 2, and the other end of the second feedback unit 5 is electrically connected with the voltage end of the parallel switch unit 3.

In this embodiment, the radio frequency switch circuit includes N switch sub-circuits, each switch sub-circuit is provided with a series switch unit, a parallel switch unit and a feedback unit, the series switch unit outputs a radio frequency signal, and the parallel switch unit blocks an inactive radio frequency signal to the ground, so as to increase the isolation of the switch; the input radio frequency signal is selectively fed forward to the voltage end through the feedback unit, and the harmonic part in the signal is filtered, so that the second harmonic and the third harmonic generated by the switch are reduced, the linearity of the switch is effectively increased, the maximum output power of the switch is increased, and the defect that the existing radio frequency switch circuit cannot meet higher use requirements is overcome.

Example 2

As shown in fig. 2, the radio frequency switch circuit of this embodiment is a further improvement of embodiment 1, specifically:

the series switch unit 2 is a first NMOS transistor Q1, a drain of the first NMOS transistor Q1 is electrically connected to the radio frequency signal input terminal RFin, a gate of the first NMOS transistor Q1 is electrically connected to the first voltage input terminal VC1, and a source of the first NMOS transistor Q1 is electrically connected to the radio frequency signal output terminal RFout; or the like, or, alternatively,

the series switch unit 2 is a first PMOS transistor Q2, a source of the first PMOS transistor Q2 is electrically connected to the rf signal input terminal RFin, a gate of the first PMOS transistor Q2 is electrically connected to the first voltage input terminal VC1, and a drain of the first PMOS transistor Q2 is electrically connected to the rf signal output terminal RFout.

The parallel switch unit 3 is a second NMOS transistor Q3, a drain of the second NMOS transistor Q3 is electrically connected to the rf signal output terminal RFout, a gate of the second NMOS transistor Q3 is electrically connected to the second voltage input terminal VC2, and a source of the second NMOS transistor Q3 is grounded; or the like, or, alternatively,

the series switch unit 2 is a second PMOS transistor Q4, a source of the second PMOS transistor Q4 is electrically connected to the rf signal output terminal RFout, a gate of the second PMOS transistor Q4 is electrically connected to the second voltage input terminal VC2, and a drain of the second PMOS transistor Q4 is grounded.

When the switch sub-circuit 1 further includes the first feedback unit 4, the first feedback unit 4 includes a first inductance unit 6 and a first capacitance unit 7, as shown in fig. 2, in this case, the radio frequency switch circuit is a single-pole single-throw switch, and N is 1.

One end of the first inductance unit 6 is electrically connected to the signal output end of the series switch unit 2, the other end of the first inductance unit 6 is electrically connected to one end of the first capacitance unit 7, and the other end of the first capacitance unit 7 is electrically connected to the voltage end of the series switch unit 2. As shown in fig. 3, the rf switch circuit is a single-pole double-throw switch, where N is 2.

When the rf switch circuit is a single-pole single-throw switch, as shown in fig. 4, the first inductance unit 6 includes a first inductance L1, the first capacitance unit 7 includes a first capacitance C1, one end of the first inductance L1 is electrically connected to one end of the first capacitance C1, the other end of the first inductance L1 is electrically connected to the signal output terminal of the series switch unit 2, and the other end of the first capacitance C1 is electrically connected to the voltage terminal of the series switch unit 2. As shown in fig. 5, the rf switch circuit is a single-pole double-throw switch, where N is 2.

Or, the first inductance unit 5 includes at least two first inductances L1, and the first capacitance unit 6 includes at least two first capacitances C1;

each first inductor L1 is connected in series, each first capacitor C1 is connected in series, one end of each of the first inductors L1 connected in series is electrically connected to one end of each of the first capacitors C1 connected in series, the other ends of the first inductors L1 connected in series are electrically connected to the signal output end of the series switch unit 2, and the other ends of the first capacitors C1 connected in series are electrically connected to the voltage end of the series switch unit 2.

When the switch sub-circuit 1 further includes the second feedback unit 5, as shown in fig. 6, the second feedback unit 5 includes a second inductance unit 8 and a second capacitance unit 9, and the radio frequency switch circuit is a single-pole single-throw switch, where N is 1.

One end of the second inductance unit 8 is electrically connected to the signal output end of the series switch unit 2, the other end of the second inductance unit 8 is electrically connected to one end of the second capacitance unit 9, and the other end of the second capacitance unit 9 is electrically connected to the voltage end of the parallel switch unit 3. As shown in fig. 7, the rf switch circuit is a single-pole double-throw switch, where N is 2.

Specifically, when the rf switch circuit is a single-pole single-throw switch, as shown in fig. 8, the second inductance unit 8 includes a second inductance L2, the second capacitance unit 9 includes a second capacitance C2, one end of the second inductance L2 is electrically connected to one end of the second capacitance C2, the other end of the second inductance L2 is electrically connected to the signal output terminal of the series switch unit 2, and the other end of the second capacitance C2 is electrically connected to the voltage terminal of the parallel switch unit 3. As shown in fig. 9, the rf switch circuit is a single-pole double-throw switch, where N is 2.

Or, the second inductance unit 8 includes at least two second inductances L2, and the second capacitance unit 9 includes at least two second capacitances C2.

Each of the second inductors L2 is connected in series, each of the second capacitors C2 is connected in series, one end of each of the plurality of second inductors L2 connected in series is electrically connected to one end of each of the plurality of second capacitors C2 connected in series, the other end of each of the plurality of second inductors L2 connected in series is electrically connected to a signal output terminal of the series switch unit 2, and the other end of each of the plurality of second capacitors C2 connected in series is electrically connected to a voltage terminal of the parallel switch unit 3.

When the switch sub-circuit 1 further includes the first feedback unit 4 and the second feedback unit 5, as shown in fig. 10, the first feedback unit 4 includes the first inductance unit 5 and the first capacitance unit 6; at this time, the radio frequency switch circuit is a single-pole single-throw switch, and N is 1.

One end of the first inductance unit 5 is electrically connected with the signal output end of the series switch unit 2, the other end of the first inductance unit 5 is electrically connected with one end of the first capacitance unit 6, and the other end of the first capacitance unit 6 is electrically connected with the voltage end of the series switch unit 2. The second feedback unit 5 includes a second inductance unit 8 and a second capacitance unit 9.

One end of the second inductance unit 8 is electrically connected to the signal output end of the series switch unit 2, the other end of the second inductance unit 8 is electrically connected to one end of the second capacitance unit 9, and the other end of the second capacitance unit 9 is electrically connected to the voltage end of the parallel switch unit 3. As shown in fig. 11, the rf switch circuit is a single-pole double-throw switch, where N is 2.

When the rf switch circuit is a single-pole single-throw switch, as shown in fig. 12, the first inductance unit 5 includes a first inductance L1, the first capacitance unit 6 includes a first capacitance C1, one end of the first inductance L1 is electrically connected to one end of the first capacitance C1, the other end of the first inductance L1 is electrically connected to the signal output terminal of the series switch unit 2, and the other end of the first capacitance C1 is electrically connected to the voltage terminal of the series switch unit 2.

The second inductance unit 8 includes a second inductance L2, the second capacitance unit 9 includes a second capacitance C2, one end of the second inductance L2 is electrically connected to one end of the second capacitance C2, the other end of the second inductance L2 is electrically connected to the signal output terminal of the series switch unit 2, and the other end of the second capacitance C2 is electrically connected to the voltage terminal of the parallel switch unit 3. As shown in fig. 13, the rf switch circuit is a single-pole double-throw switch, where N is 2.

In addition, according to actual requirements, the first inductance unit 5 includes at least two first inductances L1, and the first capacitance unit 6 includes at least two first capacitances C1;

each first inductor L1 is connected in series, each first capacitor C1 is connected in series, one end of each of the first inductors L1 connected in series is electrically connected to one end of each of the first capacitors C1 connected in series, the other ends of the first inductors L1 connected in series are electrically connected to the signal output end of the series switch unit 2, and the other ends of the first capacitors C1 connected in series are electrically connected to the voltage end of the series switch unit 2.

The second inductance unit 8 comprises at least two second inductances L2, and the second capacitance unit 9 comprises at least two second capacitances C2;

each of the second inductors L2 is connected in series, each of the second capacitors C2 is connected in series, one end of each of the plurality of second inductors L2 connected in series is electrically connected to one end of each of the plurality of second capacitors C2 connected in series, the other end of each of the plurality of second inductors L2 connected in series is electrically connected to a signal output terminal of the series switch unit 2, and the other end of each of the plurality of second capacitors C2 connected in series is electrically connected to a voltage terminal of the parallel switch unit 3.

The feedback unit in the embodiment is composed of an inductor and a capacitor, so that the nonlinearity of the series switch unit and the parallel switch unit can be effectively improved, the linearity of the switch is increased, and the output power capability of the radio frequency switch circuit can be effectively improved. The inductance value of the inductor and the capacitance value of the capacitor of the parallel switch unit are far larger than those of the inductor and the capacitance value of the capacitor of the series switch unit.

In addition, the capacitance and the inductance in the feedback unit can be flexibly adjusted according to the requirement of the actual application frequency so as to meet the requirement of the application frequency, and the use performance of the radio frequency switch circuit is improved.

According to the size of the transistors in the series switch unit and the parallel switch unit, the application frequency of different application scenes, the voltage control modes of the first voltage input end and the second voltage input end and other parameters, ADS (simulation software) and the like can be adopted for simulation to obtain a simulation result, and the simulation result is a fine adjustment value of the inductor and the capacitor in the feedback circuit. After the product is finished, a user can adjust the inductor and the capacitor in the feedback circuit by adopting a laser repairing mode according to actual requirements so as to output higher output power.

Compared with the traditional radio frequency switch circuit, the radio frequency switch circuit of the embodiment has the following corresponding effect data:

as shown in fig. 14, for the output power condition of the conventional rf switch circuit, it can be known that the input 1dB power compression point of the rf switch circuit is 34.7 dBm. Wherein the horizontal axis represents the output power corresponding to the input 1dB power compression point and the vertical axis represents the gain.

As shown in fig. 15, for the output power of the rf switch circuit of this embodiment, it can be known that the input 1dB power compression point of the rf switch circuit is 39.9dBm, which is 5.2dB higher than the output power of the conventional rf switch circuit, thereby effectively increasing the maximum output power of the switch.

In addition, in this embodiment, the radio frequency switch circuit may also be a single-pole multi-throw (M is equal to 1), a double-pole double-throw (M is equal to 3), a multi-pole multi-throw switch (M is equal to or greater than 3), and the like, where the circuit structure and the operation principle of each switch sub-circuit are similar to those described above, and therefore, the description thereof is omitted here.

The novel radio frequency switch circuit in the present embodiment is applicable to SOI (silicon on insulator) and PHEMT (for high electron mobility transistors) based on GaAs (gallium arsenide); in addition, the circuit has the advantage of low circuit design cost, is suitable for large-scale production, and has wide application prospect.

In this embodiment, the radio frequency switch circuit includes N switch sub-circuits, each switch sub-circuit is provided with a series switch unit, a parallel switch unit and a feedback unit, the series switch unit outputs a radio frequency signal, and the parallel switch unit blocks an inactive radio frequency signal to the ground, so as to increase the isolation of the switch; the input radio frequency signal is fed forward to a voltage end selectively through the feedback unit, and a harmonic part in the signal is filtered, so that the second harmonic and the third harmonic generated by the switch are reduced, the linearity of the switch is effectively increased, the maximum output power of the switch is increased, and the defect that the existing radio frequency switch circuit cannot meet higher use requirements is overcome; in addition, the sizes of the series switch unit and the parallel switch unit are greatly reduced, so that the production cost is reduced, and the device has wide practical application prospect; the radio frequency switch can be expanded into any single-pole multi-throw, double-pole double-throw or multi-pole multi-throw switch, and the use performance of the radio frequency switch circuit is further improved.

Example 3

The radio frequency switch chip of this embodiment includes the radio frequency switch circuit of any one of embodiments 1 or 2.

The radio frequency switch chip of the embodiment has higher switch linearity and switch maximum output power, and improves the service performance of the existing radio frequency switch chip.

Example 4

The wireless communication device of the present embodiment includes the radio frequency switch circuit in embodiment 3.

The wireless communication device of the present embodiment further includes a control unit electrically connected to the first voltage input terminal VC1 and the second voltage input terminal VC2 in each switch sub-circuit 1.

The control unit is used for controlling the input voltage of the first voltage input terminal VC1 and the second voltage input terminal VC2 according to a preset condition. Different control signals are generated according to different use requirements to control the operation of different switch sub-circuits, and particularly to control the input voltages of the first voltage input terminal VC1 and the second voltage input terminal VC2 in the switch sub-circuits.

The wireless communication equipment of this embodiment passes through different switch subcircuits of control unit control output radio frequency signal according to actual demand, and integrated radio frequency switch chip has higher switch linearity and the maximum output power of switch, has improved the performance of current wireless communication equipment.

While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.

Claims (12)

1. A radio frequency switch circuit is characterized in that the radio frequency switch circuit comprises N switch sub-circuits, and each switch sub-circuit corresponds to a radio frequency signal output end; wherein N is more than or equal to 1 and is an integer;

the switch sub-circuit comprises a series switch unit and a parallel switch unit;

the signal input end of the series switch unit is electrically connected with the radio frequency signal input end of the radio frequency switch circuit, the voltage end of the series switch unit is electrically connected with the first voltage input end, the signal output end of the series switch unit is respectively electrically connected with the radio frequency signal output end and the signal input end of the parallel switch unit, the voltage end of the parallel switch unit is electrically connected with the second voltage input end, and the signal output end of the parallel switch unit is grounded;

the series switch unit is used for outputting the radio frequency signal;

the parallel switch unit is used for blocking the inactive signal in the output radio frequency signal to the ground;

at the same time, only one of the N switch sub-circuits works, and the other N-1 switch sub-circuits do not work;

the switch sub-circuit further comprises a first feedback unit, one end of the first feedback unit is electrically connected with the signal output end of the series switch unit, and the other end of the first feedback unit is electrically connected with the voltage end of the series switch unit; and/or the presence of a gas in the gas,

the switch sub-circuit further comprises a second feedback unit, one end of the second feedback unit is electrically connected with the signal output end of the series switch unit, and the other end of the second feedback unit is electrically connected with the voltage end of the parallel switch unit.

2. The radio frequency switching circuit of claim 1, wherein when the switch sub-circuit includes a first feedback unit, the first feedback unit includes a first inductance unit and a first capacitance unit;

one end of the first inductance unit is electrically connected with the signal output end of the series switch unit, the other end of the first inductance unit is electrically connected with one end of the first capacitance unit, and the other end of the first capacitance unit is electrically connected with the voltage end of the series switch unit.

3. The radio frequency switch circuit according to claim 2, wherein the first inductance unit comprises a first inductance, the first capacitance unit comprises a first capacitance, one end of the first inductance is electrically connected to one end of the first capacitance, the other end of the first inductance is electrically connected to the signal output terminal of the series switch unit, and the other end of the first capacitance is electrically connected to the voltage terminal of the series switch unit; or the like, or, alternatively,

the first inductance unit comprises at least two first inductances, and the first capacitance unit comprises at least two first capacitances;

every first inductance series connection, every first electric capacity series connection will be a plurality of after establishing ties the one end of first inductance is with a plurality of after establishing ties the one end electricity of first electric capacity is connected, and a plurality of after establishing ties the other end of first inductance with the signal output part electricity of series switch unit is connected, and a plurality of after establishing ties the other end of first electric capacity with the voltage end electricity of series switch unit is connected.

4. The radio frequency switching circuit of claim 1, wherein when the switch sub-circuit includes a second feedback unit, the second feedback unit includes a second inductance unit and a second capacitance unit;

one end of the second inductance unit is electrically connected with the signal output end of the series switch unit, the other end of the second inductance unit is electrically connected with one end of the second capacitance unit, and the other end of the second capacitance unit is electrically connected with the voltage end of the parallel switch unit.

5. The radio frequency switch circuit according to claim 4, wherein the second inductance unit comprises a second inductance, the second capacitance unit comprises a second capacitance, one end of the second inductance is electrically connected to one end of the second capacitance, the other end of the second inductance is electrically connected to the signal output terminal of the series switch unit, and the other end of the second capacitance is electrically connected to the voltage terminal of the parallel switch unit; or the like, or, alternatively,

the second inductance unit comprises at least two second inductances, and the second capacitance unit comprises at least two second capacitances;

every the second inductance series connection, every the second electric capacity series connection will be a plurality of after establishing ties the one end of second inductance is with a plurality of after establishing ties the one end electricity of second electric capacity is connected, a plurality of after establishing ties the other end of second inductance with the signal output part electricity of series switch unit is connected, a plurality of after establishing ties the other end of second electric capacity with the voltage end electricity of parallel switch unit is connected.

6. The radio frequency switch circuit according to any of claims 1-5, wherein when the radio frequency switch circuit is an M-pole switch, the radio frequency switch circuit includes M of the radio frequency signal inputs; wherein M is more than or equal to 1 and is an integer.

7. The rf switch circuit of claim 1, wherein the series switch unit is a first NMOS transistor, a drain of the first NMOS transistor is electrically connected to the rf signal input terminal, a gate of the first NMOS transistor is electrically connected to the first voltage input terminal, and a source of the first NMOS transistor is electrically connected to the rf signal output terminal; or the like, or, alternatively,

the series switch unit is a first PMOS tube, a source electrode of the first PMOS tube is electrically connected with the radio frequency signal input end, a grid electrode of the first PMOS tube is electrically connected with the first voltage input end, and a drain electrode of the first PMOS tube is electrically connected with the radio frequency signal output end.

8. The rf switch circuit of claim 1, wherein the parallel switch unit is a second NMOS transistor, a drain of the second NMOS transistor is electrically connected to the rf signal output terminal, a gate of the second NMOS transistor is electrically connected to the second voltage input terminal, and a source of the second NMOS transistor is grounded; or the like, or, alternatively,

the series switch unit is a second PMOS tube, a source electrode of the second PMOS tube is electrically connected with the radio frequency signal output end, a grid electrode of the second PMOS tube is electrically connected with the second voltage input end, and a drain electrode of the second PMOS tube is grounded.

9. The radio frequency switch circuit according to claim 1, wherein when the switch sub-circuit operates, the signal input terminal of the series switch unit inputs a radio frequency signal, the voltage terminal of the series switch unit inputs a high level, and the voltage terminal of the parallel switch unit inputs a low level.

10. A radio frequency switching chip, characterized in that the radio frequency switching device comprises the radio frequency switching circuit of any one of claims 1 to 9.

11. A wireless communication device, characterized in that it comprises a radio frequency switch chip according to claim 10.

12. The wireless communication device of claim 11, wherein the wireless communication device further comprises a control unit;

the control unit is electrically connected with the first voltage input end and the second voltage input end in each switch sub-circuit;

the control unit is used for controlling the input voltage of the first voltage input end and the second voltage input end according to a preset condition.

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