CN203034139U - LED epitaxial wafer reaction cavity - Google Patents
LED epitaxial wafer reaction cavity Download PDFInfo
- Publication number
- CN203034139U CN203034139U CN 201220609441 CN201220609441U CN203034139U CN 203034139 U CN203034139 U CN 203034139U CN 201220609441 CN201220609441 CN 201220609441 CN 201220609441 U CN201220609441 U CN 201220609441U CN 203034139 U CN203034139 U CN 203034139U
- Authority
- CN
- China
- Prior art keywords
- epitaxial wafer
- led epitaxial
- growth
- reaction chamber
- wafer reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses an LED (Light-emitting Diode) epitaxial wafer reaction cavity which comprises at least two growth regions, wherein the growth regions are mutually separated; each growth region is provided with a spray header used for introducing reaction gas; and at least two growth regions are used for growing different semiconductor material layers in a structure of an LED epitaxial wafer respectively. According to the LED epitaxial wafer reaction cavity, multiple mutually separated regions are arranged on a base, and at least two regions serve as the growth regions and are used for growing different semiconductor materials, so that the problem of cross contamination during growth of the different layers is solved, and the uniformity, the stability and the photoelectricity characteristic of the growing materials are improved greatly.
Description
Technical field
The utility model relates to field of manufacturing semiconductor devices, particularly a kind of LED epitaxial wafer reaction chamber.
Background technology
From the rise of the basic third generation semiconductor material of gan (GaN), (LightEmitting Diode LED) succeeds in developing blue light-emitting diode, and the luminous intensity of LED and white-light emitting efficient improve constantly.LED is considered to the novel solid state light emitter that the next generation enters the general illumination field, therefore obtains extensive concern; LED epitaxial wafer growth apparatus also becomes the focus of technical study instantly.
As shown in Figure 1, existing LED epitaxial wafer reaction chamber comprises spray header 1, pedestal 2 and well heater 3, and those well heaters 3 are used for to these pedestal 2 heating.During use, shown in Fig. 1-2, a plurality of substrates 9 are positioned on this pedestal 2, open this spray header 1 then gas is generated injection of material on those substrates 9, the molecule of gas growth material can the cracking of when heating and with other material generation chemical reaction, for example, NH
3The N atom that cracking goes out and metal Ga atom generate GaN molecule, PH
3The P atom that (phosphine) cracking goes out and metal In (indium) atom generation chemical reaction generate the InP molecule.By accumulating the molecule that these III-V family elements or II-VI family element form, finally can form corresponding atom or molecular layer.
There is following problem in existing LED epitaxial wafer reaction chamber: cross-contamination issue, each layer of LED epitaxial wafer of prior art all finished in same reaction chamber growth, crossed contamination can take place between each layer, particularly n type doped layer is to the pollution of Multiple Quantum Well (MQW) layer, thereby influenced the quality of LED epitaxial wafer.
Therefore study and develop that a kind of to have a high LED epitaxial wafer reaction chamber of less crossed contamination and stability particularly necessary.
The utility model content
The technical problems to be solved in the utility model is in order to overcome the defective that there is crossed contamination in LED epitaxial wafer reaction chamber of the prior art, a kind of LED epitaxial wafer reaction chamber to be provided, and this LED epitaxial wafer reaction chamber can solve the above-mentioned problem of mentioning.
The utility model is to solve above-mentioned technical problem by following technical proposals:
A kind of LED epitaxial wafer reaction chamber, comprise at least two growth districts, those growth districts are separated mutually, each growth district is provided with for the spray header of introducing reactant gases, has two growth districts be respectively applied to grow different semiconductor material layers in the structure of LED epitaxial wafer in those growth districts at least.
Preferable, those growth districts be shaped as fan-shaped and annular array.
Preferable, this LED epitaxial wafer comprises n type doped layer, luminescent layer, the p-type doped layer that is cascading, two growth districts in those growth districts are first growth district and second growth district, this first growth district is used for this n type doped layer of growing at least, and this second growth district is used for this luminescent layer of growing at least.
Preferable, this LED epitaxial wafer reaction chamber comprises four growth districts, these four growth districts are respectively pre-growth district, n type doped layer growth district, luminescent layer growth district and p-type doped layer growth district,
This pre-growth district is used for substrate is heat-treated and grown buffer layer;
This n type doped layer growth district is used for the growing n-type doped layer;
This luminescent layer growth district is used for light-emitting layer grows;
This p-type doped layer growth district is used for the growing p-type doped layer.
Preferable, this LED epitaxial wafer reaction chamber also comprises an auxiliary area, this auxiliary area is for the LED epitaxial wafer being carried out anneal and/or the LED epitaxial wafer being detected.
Preferable, this luminescent layer comprises multi layer quantum well.
Preferable, this LED epitaxial wafer reaction chamber also comprises a plurality of gas curtain or division plates for two zones of separating adjacent, and those division plates can extend in the LED epitaxial wafer reaction chamber to isolate those zones and to bounce back so that those zones are interconnected from this LED epitaxial wafer reaction chamber.
Preferable, the LED epitaxial wafer detected comprise electroluminescence spectrum or the photoluminescence spectrum of testing this luminescent layer.
Preferable, those growth districts all have for heated substrate and the well heater that works alone.
Preferable, this LED epitaxial wafer reaction chamber has an air-bleed system that is used to those zones to vacuumize.
Positive progressive effect of the present utility model is:
By the zone of a plurality of mutual separations is set at this pedestal, and general at least two zones wherein are as growth district and the different semiconductor material of growing, solve the cross-contamination issue when growing different layers, greatly improved homogeneity, stability and the photoelectric characteristic of growth material.
Description of drawings
Fig. 1 is the front view of existing LED epitaxial wafer reaction chamber.
Fig. 2 is the vertical view of the pedestal of existing LED epitaxial wafer reaction chamber.
Fig. 3 is the vertical view of the LED epitaxial wafer reaction chamber of the utility model embodiment 1.
Fig. 4 is the vertical view of the LED epitaxial wafer reaction chamber of the utility model embodiment 2.
Fig. 5 is the vertical view of the LED epitaxial wafer reaction chamber of the utility model embodiment 3.
Fig. 6 is the vertical view of the LED epitaxial wafer reaction chamber of the utility model embodiment 4.
Fig. 7 is the structural representation of the MOCVD reactor of the utility model embodiment 4.
Description of reference numerals:
Spray header: 1 pedestal: 2
Well heater: 3 substrates: 9
First growth district: 4 division plates: 5
Second growth district: 6 first growth districts: 40
Gas curtain: 50 second growth districts: 60
Transferring device: 70 pre-growth districts: 41
N type doped layer growth district: 42 luminescent layer growth districts: 43
P-type doped layer growth district: 44 auxiliary areas: 45
Gas curtain: 51 substrate load districts: 410
Pre-growth district: 420 n type doped layer growth districts: 430
Luminescent layer growth district: 440 p-type doped layer growth districts: 450
Auxiliary area: 460 epitaxial wafer unload zones: 470
MOCVD reactor: 8
Source supply system: 81 flow control systems: 82
Electrical control system: 83 warnings: 84
Embodiment
Provide the utility model preferred embodiment below in conjunction with accompanying drawing, to describe the technical solution of the utility model in detail.
The LED epitaxial wafer reaction chamber of present embodiment comprises two zone and the transferring devices separated mutually, as shown in Figure 3, those zones comprise one first growth district 4 and one second growth district 6, this first growth district 4 and this second growth district 6 are separated by a division plate 5, and its inside is provided with a spray header, those spray headers can independently be controlled, and are used for introducing reactant gases to each vitellarium respectively.This transferring device is used for supporting several substrates 9.This LED epitaxial wafer reaction chamber also comprises a division plate 5, and this division plate 5 is used for separating those zones, and bounces back so that those zones are interconnected from this LED epitaxial wafer reaction chamber.This first growth district 4 and this second growth district 6 can share same air-bleed system.
This first growth district 4 is used for deposit growth the first film on those substrates 9;
This transferring device is used for those substrates 9 are delivered to this second growth district 6 from this first growth district 4;
This second growth district 6 is used on those substrates deposit second film of growing.
During use, the user can handle this LED epitaxial wafer reaction chamber growth light-emitting device epitaxial wafer, for example, and the Multiple Quantum Well LED epitaxial wafer shown in the growth table 1, sapphire substrate (thickness and doping content are existing parameter) can be buied from market for existing ripe product.
Table 1
| Layer numbering | Layer title | Thickness | Doping content |
| 4 | P-type doped layer pGaN (Si) | |
5×10 18 |
| 3 | The Multiple Quantum Well active area | 400nm | 0 |
| 2 | N type doped layer nGaN (Be) | |
1×10 18 |
| 1 | Buffer layer nGaN(Be) | |
5×10 18 |
| 0 | Sapphire substrate | Existing parameter | Existing parameter |
Only need to carry out following growth flow process:
The grow buffer layer of 50 nanometer thickness of this first growth district 4 deposit on this sapphire substrate, and doping content is 5 * 10
18Beryllium (Be) element;
The grow n type doped layer of 100 nanometer thickness of this first growth district 4 deposit on this buffer layer, and doping content is 1 * 10
18Beryllium (Be) element;
This transferring device is delivered to this second growth district 6 with those sapphire substrates from this first growth district 4;
The deposit on this n type doped layer of this second growth district 6 grow Multiple Quantum Well (MQW) active area of 400 nanometer thickness and the p-type doped layer of 100 nanometer thickness, and doping content is 5 * 10 in this p-type doped layer
18Silicon (Si) element.
During use, in the treatment time in the time of controlling the deposit different layers well, make each step matching and coordination in the flow process.In addition, " pGaN's) " is the habitual ways of writing in this area, and looking like is the gan that p-type is mixed, and the p-type impurity is the Be element.
By LED epitaxial wafer reaction chamber being divided into this first growth district 4 and this second growth district 6, this first growth district 4 is used for each layer before this n type doped layer of deposit, this this mqw layer of second growth district, 6 deposits and this p-type doped layer, can realize this n type doped layer and this mqw layer are separated the purpose of growing, solve in the prior art problem of crossed contamination between this n type doped layer and this mqw layer.By using the LED epitaxial wafer reaction chamber of present embodiment, the photoelectric characteristic of LED epitaxial wafer has obtained improving significantly.
The LED epitaxial wafer reaction chamber of present embodiment and embodiment 1 has the identical part in many places, and these same sections repeat no more herein.As shown in Figure 4, and the difference of present embodiment and embodiment 1 only is: first growth district 40 of present embodiment is for circular, second growth district 60 of present embodiment is annular, second growth district 60 of annular intercepts the gas curtain 50 that an annular is arranged around being arranged at outside the first circular growth district 40 between this first growth district 40 and this second growth district 60.In addition, present embodiment comprises six transferring devices 70, and those transferring devices 70 are used for those substrates are delivered to this second growth district 60 or are delivered to this first growth district 40 from this second growth district 60 from this first growth district 40.
The process of the LED epitaxial wafer reaction chamber growth LED epitaxial wafer of embodiment 2 and the process of the growth of the LED epitaxial wafer reaction chamber among the embodiment 1 LED epitaxial wafer are identical, and this first growth district 40 is used for deposit growth the first film on those substrates 9; This second growth district 60 is used on those substrates deposit second film of growing.
As shown in Figure 5, the LED epitaxial wafer reaction chamber of present embodiment comprises five zones of separating mutually, and separate by five gas curtains 51 in those zones.Those zones comprise four growth districts and an auxiliary area 45, and each growth district is provided with a spray header.Those growth districts comprise a pre-growth district 41, a n type doped layer growth district 42, a luminescent layer growth district 43 and a p-type doped layer growth district 44.Those growth districts all have the well heater for heated substrate, the separate work of the well heater in each growth district.
This pre-growth district 41 is used for substrate 9 is heat-treated and grown buffer layer;
This n type doped layer growth district 42 is used for the growing n-type doped layer;
This luminescent layer growth district 43 is used for light-emitting layer grows;
This p-type doped layer growth district 44 is used for the growing p-type doped layer;
This auxiliary area 45 is for the LED epitaxial wafer being carried out anneal and/or the LED epitaxial wafer being detected.
The LED epitaxial wafer reaction chamber of present embodiment is divided into different growth districts, and each growth district is used for a kind of specific thin film layer of growth, and namely each layer deposits respectively.Owing to be provided with a gas curtain between per two growth districts, therefore solved the cross-contamination issue when growing different layers, and greatly improved homogeneity, stability and the photoelectric characteristic of growth material.Except using gas curtain, can also use the division plate with telescopicing performance to separate those zones.
Embodiment 4
The LED epitaxial wafer reaction chamber of present embodiment and embodiment 1 has the identical part in many places, and these same sections repeat no more herein.As shown in Figure 6, and the difference of present embodiment and embodiment 1 only is: the pedestal of the LED epitaxial wafer reaction chamber of present embodiment is provided with seven zones of separating mutually, and those zones comprise five growth districts, a substrate load district 410 and an epitaxial wafer unload zone 470.
Those growth districts comprise a pre-growth district 420, a n type doped layer growth district 430, a luminescent layer growth district 440, a p-type doped layer growth district 450, an auxiliary area 460.
This substrate load district 410 is used for by mechanical manipulator filling substrate;
This epitaxial wafer unload zone 470 is used for having by mechanical manipulator unloading growth the LED epitaxial wafer of different laminate structures.
During use, add substrate 9 by this substrate load district 410, for example, sapphire substrate.This sapphire substrate is successively by the different layer of those growth district extensions.Take off the LED epitaxial wafer that growth has different laminate structures by this epitaxial wafer unload zone at last.The LED epitaxial wafer reaction chamber of present embodiment can be one by one filling and the unloading in zone, and the different layers of can growing successively, the output of LED epitaxial wafer is 3 to 5 times of LED epitaxial wafer reaction chamber of embodiment 3.
Monitor in real time at needs under the situation of epitaxial film characteristic, can also be provided with a photoelectric characteristic proofing unit in this LED epitaxial wafer reaction chamber, in order to test the electroluminescence spectrum of this luminescent layer, i.e. EL(Electro-luminescence) spectrum; Or test the photoluminescence spectrum of this luminescent layer, i.e. PL(Photoluminescence) spectrum, in order to the described epitaxial film characteristic parameter of real-time acquisition.
In addition, the LED epitaxial wafer reaction chamber that embodiment 3 and embodiment 4 provide comprises auxiliary area, this auxiliary area is for the LED epitaxial wafer being carried out anneal and/or the LED epitaxial wafer being detected, wherein, the detection method that the LED epitaxial wafer is detected comprises the electroluminescence spectrum of testing this luminescent layer, i.e. EL(Electro-luminescence) spectrum; Or test the photoluminescence spectrum of this luminescent layer, i.e. PL(Photoluminescence) spectrum, to obtain the characteristic parameter of described LED epitaxial wafer.In some cases, LED epitaxial wafer reaction chamber can have auxiliary area.At this moment, annealing characterization processes and the described LED epitaxial wafer is detected also can be by outside Other Instruments realizations.
As shown in Figure 7, present embodiment also provides a kind of MOCVD(Metal-organic ChemicalVapor DePosition, the organometallics chemical vapor deposition) reactor 8, comprise a source supply system 81, a flow control system 82, an electrical control system 83, a warning 84 and the as above described LED epitaxial wafer of any embodiment reaction chamber.
Though it is more than described embodiment of the present utility model, the utility model is not limited thereto, as in each embodiment of the present utility model, described for using air inlet component substitute to the spray header of reaction zone introducing reactant gases; Air inlet component is inlet pipe as described, and described inlet pipe is directly introduced reactant gases to described reaction zone.
Though more than described embodiment of the present utility model, it will be understood by those of skill in the art that these only illustrate, protection domain of the present utility model is limited by appended claims.Those skilled in the art can make numerous variations or modification to these embodiments under the prerequisite that does not deviate from principle of the present utility model and essence, but these changes and modification all fall into protection domain of the present utility model.
Claims (10)
1. LED epitaxial wafer reaction chamber, it is characterized in that, this LED epitaxial wafer reaction chamber comprises at least two growth districts, those growth districts are separated mutually, each growth district is provided with for the spray header of introducing reactant gases, has two growth districts be respectively applied to grow different semiconductor material layers in the structure of LED epitaxial wafer in those growth districts at least.
2. LED epitaxial wafer reaction chamber as claimed in claim 1 is characterized in that, those growth districts be shaped as fan-shaped and annular array.
3. LED epitaxial wafer reaction chamber as claimed in claim 1, it is characterized in that, this LED epitaxial wafer comprises n type doped layer, luminescent layer, the p-type doped layer that is cascading, two growth districts in those growth districts are first growth district and second growth district, this first growth district is used for this n type doped layer of growing at least, and this second growth district is used for this luminescent layer of growing at least.
4. LED epitaxial wafer reaction chamber as claimed in claim 1, it is characterized in that, this LED epitaxial wafer reaction chamber comprises four growth districts, and these four growth districts are respectively pre-growth district, n type doped layer growth district, luminescent layer growth district and p-type doped layer growth district
This pre-growth district is used for substrate is heat-treated and grown buffer layer;
This n type doped layer growth district is used for the growing n-type doped layer;
This luminescent layer growth district is used for light-emitting layer grows;
This p-type doped layer growth district is used for the growing p-type doped layer.
5. LED epitaxial wafer reaction chamber as claimed in claim 3 is characterized in that, this LED epitaxial wafer reaction chamber also comprises an auxiliary area, and this auxiliary area is for the LED epitaxial wafer being carried out anneal and/or the LED epitaxial wafer being detected.
6. LED epitaxial wafer reaction chamber as claimed in claim 4 is characterized in that this luminescent layer comprises multi layer quantum well.
7. as any described LED epitaxial wafer reaction chamber among the claim 1-6, it is characterized in that, this LED epitaxial wafer reaction chamber also comprises a plurality of gas curtain or division plates for two zones of separating adjacent, and those division plates can extend in the LED epitaxial wafer reaction chamber to isolate those zones and to bounce back so that those zones are interconnected from this LED epitaxial wafer reaction chamber.
8. LED epitaxial wafer reaction chamber as claimed in claim 5 is characterized in that, the LED epitaxial wafer is detected comprise electroluminescence spectrum or the photoluminescence spectrum of testing this luminescent layer.
9. as any described LED epitaxial wafer reaction chamber among the claim 1-6, it is characterized in that those growth districts all have for heated substrate and the well heater that works alone.
10. as any described LED epitaxial wafer reaction chamber among the claim 1-6, it is characterized in that this LED epitaxial wafer reaction chamber has an air-bleed system that is used to those zones to vacuumize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220609441 CN203034139U (en) | 2012-11-16 | 2012-11-16 | LED epitaxial wafer reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220609441 CN203034139U (en) | 2012-11-16 | 2012-11-16 | LED epitaxial wafer reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203034139U true CN203034139U (en) | 2013-07-03 |
Family
ID=48686276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220609441 Expired - Fee Related CN203034139U (en) | 2012-11-16 | 2012-11-16 | LED epitaxial wafer reaction cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203034139U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824801A (en) * | 2012-11-16 | 2014-05-28 | 光达光电设备科技（嘉兴）有限公司 | LED epitaxial wafer reaction cavity |
-
2012
- 2012-11-16 CN CN 201220609441 patent/CN203034139U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824801A (en) * | 2012-11-16 | 2014-05-28 | 光达光电设备科技（嘉兴）有限公司 | LED epitaxial wafer reaction cavity |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100483627C (en) | Gan substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same | |
| US11081618B2 (en) | Buried activated p-(Al,In)GaN layers | |
| US9929308B2 (en) | Nitride light emitting diode and fabrication method thereof | |
| US9385278B2 (en) | Semiconductor growth substrates and associated systems and methods for die singulation | |
| US20130023079A1 (en) | Fabrication of light emitting diodes (leds) using a degas process | |
| US9978908B2 (en) | Non-polar blue light LED epitaxial wafer based on LAO substrate and preparation method thereof | |
| CN104091873B (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN103887378A (en) | Method for epitaxial growth of ultraviolet LED with high luminous efficacy | |
| CN108198915B (en) | LED preparation process | |
| CN105122473A (en) | Optoelectronic semiconductor chip and method for the production thereof | |
| CN203034139U (en) | LED epitaxial wafer reaction cavity | |
| CN105957929A (en) | Wide frequency spectrum GaN-based LED epitaxial structure and manufacturing method thereof | |
| CN105720154B (en) | A kind of LED epitaxial wafer and its manufacturing method | |
| TW201401557A (en) | Vapor deposition apparatus and method for manufacturing a nitride semiconductor light emitting element | |
| CN103560181A (en) | Light-emitting diode epitaxial growth method | |
| CN105047779B (en) | Based on yellow light LED material on Si substrates and preparation method thereof | |
| CN105742434A (en) | Nitride luminous diode and preparation method thereof | |
| CN108258087A (en) | High-efficiency energy-saving LED preparation process | |
| WO2022099599A1 (en) | Led device, led structure and preparation method therefor | |
| CN103824801A (en) | LED epitaxial wafer reaction cavity | |
| CN114373838A (en) | LED epitaxial wafer with quantum barrier layer silicon doping structure, growth method and manufacturing method thereof | |
| CN213925126U (en) | Annular MOCVD reactor structure and III-V group compound semiconductor material production system | |
| CN203007407U (en) | Chemical vapor deposition equipment | |
| CN114086157B (en) | Conical structure graphite substrate | |
| Tompa et al. | Large area multi-wafer MOCVD of transparent and conducting ZnO films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130703 Termination date: 20131116 |