CN103824801A - LED epitaxial wafer reaction cavity - Google Patents
LED epitaxial wafer reaction cavity Download PDFInfo
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- CN103824801A CN103824801A CN201210465057.XA CN201210465057A CN103824801A CN 103824801 A CN103824801 A CN 103824801A CN 201210465057 A CN201210465057 A CN 201210465057A CN 103824801 A CN103824801 A CN 103824801A
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- epitaxial wafer
- led epitaxial
- growth
- reaction chamber
- wafer reaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Abstract
The invention discloses an LED epitaxial wafer reaction cavity comprising at least two growth regions which are mutually separated. Each growth region is provided with a gas supply component. At least two of the growth regions are respectively used for growing different semiconductor material layers in the structure of an LED epitaxial wafer. According to the LED epitaxial wafer reaction cavity, multiple mutually-separated regions are arranged on a base, and at least two of the regions serve as the growth regions and are used for growing different semiconductor materials, thus solving the problem of cross contamination during growth of different layers and greatly improving the uniformity, the stability and the photoelectric characteristic of the growing materials.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly a kind of LED epitaxial wafer reaction chamber.
Background technology
From the rise of gallium nitride (GaN) base third generation semi-conducting material, blue light-emitting diode (LightEmitting Diode, LED) is succeeded in developing, and the luminous intensity of LED and white-light emitting efficiency improve constantly.LED is considered to the next generation and enters the New Solid light source in general illumination field, therefore obtains extensive concern; LED epitaxial wafer growth apparatus also becomes the focus of technical research instantly.
As shown in Figure 1, existing LED epitaxial wafer reaction chamber comprises spray head 1, pedestal 2 and heater 3, and those heaters 3 are for heating to this pedestal 2.When use, as shown in Figure 1-2, multiple substrates 9 are positioned on this pedestal 2, then open this spray head 1 gas generating material is sprayed on those substrates 9, the molecule of gas growth material can the cracking of when heating and with other material generation chemical reaction, for example, NH
3the N atom that cracking goes out and metal Ga atom generate GaN molecule, PH
3the P atom that (phosphine) cracking goes out and metal In (indium) atom generation chemical reaction generate InP molecule.The molecule forming by accumulating these III-V family elements or II-VI family element, finally can form corresponding atom or molecular layer.
There is following problem in existing LED epitaxial wafer reaction chamber: cross-contamination issue, each layer of the LED epitaxial wafer of prior art has all been grown at same reaction chamber, between each layer, can there is cross pollution, the particularly pollution of N-shaped doped layer to Multiple Quantum Well (MQW) layer, thus the quality of LED epitaxial wafer affected.
Therefore study and develop a kind of have less cross pollution and the high particularly necessity of LED epitaxial wafer reaction chamber of stability.
Summary of the invention
The technical problem to be solved in the present invention is the defect that has cross pollution in order to overcome LED epitaxial wafer reaction chamber of the prior art, and a kind of LED epitaxial wafer reaction chamber is provided, and this LED epitaxial wafer reaction chamber can solve the above-mentioned problem of mentioning.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of LED epitaxial wafer reaction chamber, comprise at least two growth districts, those growth districts are separated mutually, and each growth district is provided with gas supply member, the different semiconductor material layers that have at least two growth districts to be respectively used to grow in the structure of LED epitaxial wafer in those growth districts.
Preferably, those growth districts be shaped as fan-shaped and annular array.
Preferably, this LED epitaxial wafer comprises the N-shaped doped layer, luminescent layer, the p-type doped layer that are cascading, two growth districts in those growth districts are the first growth district and the second growth district, this first growth district is for this N-shaped doped layer of at least growing, and this second growth district is for this luminescent layer of at least growing.
Preferably, this LED epitaxial wafer reaction chamber comprises four growth districts, and these four growth districts are respectively pregrown region, N-shaped doped layer growth district, luminescent layer growth district and p-type doped layer growth district,
This pregrown region is for heat-treating and grown buffer layer substrate;
This N-shaped doped layer growth district is for growing n-type doped layer;
This luminescent layer growth district is for light-emitting layer grows;
This p-type doped layer growth district is for growing p-type doped layer.
Preferably, this LED epitaxial wafer reaction chamber also comprises an auxiliary area, and this auxiliary area is for carrying out annealing in process and/or LED epitaxial wafer is detected LED epitaxial wafer.
Preferably, this luminescent layer comprises multi layer quantum well.
Preferably, this LED epitaxial wafer reaction chamber also comprises multiple gas curtain or demarcation strips for two regions of separating adjacent, and those demarcation strips can extend in LED epitaxial wafer reaction chamber to isolate those regions and to bounce back so that those regions are interconnected from this LED epitaxial wafer reaction chamber.
Preferably, LED epitaxial wafer is detected and comprises electroluminescence spectrum or the photoluminescence spectrum of testing this luminescent layer.
Preferably, those growth districts all have for heated substrate and the heater that works alone.
Preferably, this LED epitaxial wafer reaction chamber has an extract system that is used to those regions to vacuumize.
Positive progressive effect of the present invention is:
By the region of multiple mutual separations is set on this pedestal, and using at least two regions wherein as growth district and the different semi-conducting material of growing, solve the cross-contamination issue while growing different layers, greatly improved uniformity, stability and the photoelectric characteristic of growth material.
Accompanying drawing explanation
Fig. 1 is the front view of existing LED epitaxial wafer reaction chamber.
Fig. 2 is the vertical view of the pedestal of existing LED epitaxial wafer reaction chamber.
Fig. 3 is the vertical view of the LED epitaxial wafer reaction chamber of the embodiment of the present invention 1.
Fig. 4 is the vertical view of the LED epitaxial wafer reaction chamber of the embodiment of the present invention 2.
Fig. 5 is the vertical view of the LED epitaxial wafer reaction chamber of the embodiment of the present invention 3.
Fig. 6 is the vertical view of the LED epitaxial wafer reaction chamber of the embodiment of the present invention 4.
Fig. 7 is the structural representation of the MOCVD reactor of the embodiment of the present invention 4.
Description of reference numerals:
Spray head: 1 pedestal: 2
Heater: 3 substrates: 9
The first growth district: 4 demarcation strips: 5
The second growth district: 6 first growth districts: 40
Gas curtain: 50 second growth districts: 60
Transferring device: 70 pregrown regions: 41
N-shaped doped layer growth district: 42 luminescent layer growth districts: 43
P-type doped layer growth district: 44 auxiliary areas: 45
Gas curtain: 51 substrate load districts: 410
Pregrown region: 420 N-shaped doped layer growth districts: 430
Luminescent layer growth district: 440 p-type doped layer growth districts: 450
Auxiliary area: 460 epitaxial wafer unload zones: 470
MOCVD reactor: 8
Source supply system: 81 flow control systems: 82
Electric-control system: 83 warning systems: 84
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
Embodiment 1
The LED epitaxial wafer reaction chamber of the present embodiment comprises two region and the transferring devices mutually separated, as shown in Figure 3, those regions comprise one first growth district 4 and one second growth district 6, this the first growth district 4 and this second growth district 6 are separated by a demarcation strip 5, and its inside is provided with a spray head, those spray heads can independently be controlled.This transferring device is used for supporting several substrates 9.This LED epitaxial wafer reaction chamber also comprises a demarcation strip 5, and this demarcation strip 5 is for separating those regions, and from this LED epitaxial wafer reaction chamber retraction so that those regions are interconnected.This first growth district 4 and this second growth district 6 can share same extract system.
This first growth district 4 is for the growth of deposit on those substrates 9 the first film;
This transferring device is for being delivered to this second growth district 6 by those substrates 9 from this first growth district 4;
This second growth district 6 is for second film of growing of deposit on those substrates.
When use, user can handle this LED epitaxial wafer reaction chamber growth light-emitting device epitaxial wafer, for example, and the Multiple Quantum Well LED epitaxial wafer shown in growth table 1, sapphire substrate (thickness and doping content are existing parameter) is existing more ripe product, can from market, buy.
Table 1
| Layer numbering | Layer title | Thickness | Doping content |
| 4 | P-type doped layer pGaN(Si) | 100nm | 5×10 18 |
| 3 | Multiple Quantum Well active area | 400nm | 0 |
| 2 | N-shaped doped layer nGaN(Be) | 100nm | 1×10 18 |
| 1 | Resilient coating nGaN(Be) | 50nm | 5×10 18 |
| 0 | Sapphire substrate | Existing parameter | Existing parameter |
Only need to carry out following growth flow process:
The grow resilient coating of 50 nanometer thickness of this first growth district 4 deposit on this sapphire substrate, and doping content is 5 × 10
18beryllium (Be) element;
The grow N-shaped doped layer of 100 nanometer thickness of this first growth district 4 deposit on this resilient coating, and doping content is 1 × 10
18beryllium (Be) element;
This transferring device is delivered to this second growth district 6 by those sapphire substrates from this first growth district 4;
The deposit on this N-shaped doped layer of this second growth district 6 grow Multiple Quantum Well (MQW) active area of 400 nanometer thickness and the p-type doped layer of 100 nanometer thickness, and doping content is 5 × 10 in this p-type doped layer
18silicon (Si) element.
When use, in the processing time control deposit different layers well time, make each step matching and coordination in flow process.In addition, " pGaN's) " is the usual ways of writing in this area, look like for the gallium nitride of p-type doping, and p-type impurity is Be element.
By LED epitaxial wafer reaction chamber being divided into this first growth district 4 and this second growth district 6, this first growth district 4 is for each layer before this N-shaped doped layer of deposit, this this mqw layer of the second growth district 6 deposits and this p-type doped layer, can realize this N-shaped doped layer and this mqw layer are separated to the object of growing, solve in prior art the problem of cross pollution between this N-shaped doped layer and this mqw layer.By using the LED epitaxial wafer reaction chamber of the present embodiment, the photoelectric characteristic of LED epitaxial wafer has obtained improving significantly.
The LED epitaxial wafer reaction chamber of the present embodiment and embodiment 1 has the identical part in many places, and these same sections repeat no more herein.As shown in Figure 4, and the difference of the present embodiment and embodiment 1 is only: first growth district 40 of the present embodiment is for circular, second growth district 60 of the present embodiment is annular, the second growth district 60 of annular, around being arranged at outside the first circular growth district 40, intercepts the gas curtain 50 that has an annular between this first growth district 40 and this second growth district 60.In addition, the present embodiment comprises six transferring devices 70, and those transferring devices 70 are for being delivered to those substrates this second growth district 60 or being delivered to this first growth district 40 from this second growth district 60 from this first growth district 40.
The process of the LED epitaxial wafer reaction chamber growth LED epitaxial wafer of embodiment 2 is identical with the process of the LED epitaxial wafer reaction chamber growth LED epitaxial wafer in embodiment 1, and this first growth district 40 is for the growth of deposit on those substrates 9 the first film; This second growth district 60 is for second film of growing of deposit on those substrates.
Embodiment 3
As shown in Figure 5, the LED epitaxial wafer reaction chamber of the present embodiment comprises five regions of mutually separating, and separate by five gas curtains 51 in those regions.Those regions comprise four growth districts and an auxiliary area 45, and each growth district is provided with a spray head.Those growth districts comprise a pregrown region 41, a N-shaped doped layer growth district 42, a luminescent layer growth district 43 and a p-type doped layer growth district 44.Those growth districts all have the heater for heated substrate, the separate work of heater in each growth district.
This pregrown region 41 is for heat-treating and grown buffer layer substrate 9;
This N-shaped doped layer growth district 42 is for growing n-type doped layer;
This luminescent layer growth district 43 is for light-emitting layer grows;
This p-type doped layer growth district 44 is for growing p-type doped layer;
This auxiliary area 45 is for carrying out annealing in process and/or LED epitaxial wafer being detected to LED epitaxial wafer.
The LED epitaxial wafer reaction chamber of the present embodiment is divided into different growth districts, each growth district a kind of specific thin layer that is used for growing, and each layer deposits respectively.Owing to being provided with a gas curtain between every two growth districts, therefore solving the cross-contamination issue while growing different layers, and greatly improved uniformity, stability and the photoelectric characteristic of growth material.Except using gas curtain, can also use the demarcation strip with telescopicing performance to separate those regions.
Embodiment 4
The LED epitaxial wafer reaction chamber of the present embodiment and embodiment 1 has the identical part in many places, and these same sections repeat no more herein.As shown in Figure 6, and the difference of the present embodiment and embodiment 1 is only: be provided with seven regions of mutually separating on the pedestal of the LED epitaxial wafer reaction chamber of the present embodiment, those regions comprise five growth districts, a substrate load district 410 and an epitaxial wafer unload zone 470.
Those growth districts comprise a pregrown region 420, a N-shaped doped layer growth district 430, a luminescent layer growth district 440, a p-type doped layer growth district 450, an auxiliary area 460.
This substrate load district 410 is for loading substrate by manipulator;
This epitaxial wafer unload zone 470 has the LED epitaxial wafer of different layer structures for unload growth by manipulator.
When use, add substrate 9 by this substrate load district 410, for example, sapphire substrate.This sapphire substrate is successively by the different layer of those growth district extensions.Finally take off growth by this epitaxial wafer unload zone and have the LED epitaxial wafer of different layer structures.Filling and the unloading in region one by one of the LED epitaxial wafer reaction chamber of the present embodiment, and the different layers of can growing successively, the output of LED epitaxial wafer is 3 to 5 times of LED epitaxial wafer reaction chamber of embodiment 3.
In the situation that needs are monitored epitaxial loayer characteristic in real time, in this LED epitaxial wafer reaction chamber, can also be provided with a photoelectric characteristic checkout gear, to test the electroluminescence spectrum of this luminescent layer, i.e. EL(Electro-luminescence) spectrum; Or test the photoluminescence spectrum of this luminescent layer, i.e. PL(Photoluminescence) spectrum, in order to the described epitaxial loayer characterisitic parameter of real-time acquisition.
In addition, the LED epitaxial wafer reaction chamber that embodiment 3 and embodiment 4 provide comprises auxiliary area, this auxiliary area is for carrying out annealing in process and/or LED epitaxial wafer is detected LED epitaxial wafer, wherein, the detection method that LED epitaxial wafer is detected comprises the electroluminescence spectrum of testing this luminescent layer, i.e. EL(Electro-luminescence) spectrum; Or test the photoluminescence spectrum of this luminescent layer, i.e. PL(Photoluminescence) spectrum, to obtain the characterisitic parameter of described LED epitaxial wafer.In some cases, LED epitaxial wafer reaction chamber can have auxiliary area.Now, annealing characterization processes and described LED epitaxial wafer is detected also can be by outside Other Instruments realizations.
As shown in Figure 7, the present embodiment also provides a kind of MOCVD(Metal-organic ChemicalVapor DePosition, metallo-organic compound chemical vapor deposition) reactor 8, comprise a source supply system 81, a flow control system 82, an electric-control system 83, a warning system 84 and the as above LED epitaxial wafer reaction chamber described in any embodiment.
Although more than described the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited by appended claims.Those skilled in the art is not deviating under the prerequisite of principle of the present invention and essence, can make various changes or modifications to these execution modes, but these changes and modification all fall into protection scope of the present invention.
Claims (10)
1. a LED epitaxial wafer reaction chamber, it is characterized in that, this LED epitaxial wafer reaction chamber comprises at least two growth districts, those growth districts are separated mutually, each growth district is provided with gas supply member, the different semiconductor material layers that have at least two growth districts to be respectively used to grow in the structure of LED epitaxial wafer in those growth districts.
2. LED epitaxial wafer reaction chamber as claimed in claim 1, is characterized in that, those growth districts be shaped as fan-shaped and annular array.
3. LED epitaxial wafer reaction chamber as claimed in claim 1, it is characterized in that, this LED epitaxial wafer comprises the N-shaped doped layer, luminescent layer, the p-type doped layer that are cascading, two growth districts in those growth districts are the first growth district and the second growth district, this first growth district is for this N-shaped doped layer of at least growing, and this second growth district is for this luminescent layer of at least growing.
4. LED epitaxial wafer reaction chamber as claimed in claim 1, it is characterized in that, this LED epitaxial wafer reaction chamber comprises four growth districts, and these four growth districts are respectively pregrown region, N-shaped doped layer growth district, luminescent layer growth district and p-type doped layer growth district
This pregrown region is for heat-treating and grown buffer layer substrate;
This N-shaped doped layer growth district is for growing n-type doped layer;
This luminescent layer growth district is for light-emitting layer grows;
This p-type doped layer growth district is for growing p-type doped layer.
5. LED epitaxial wafer reaction chamber as claimed in claim 3, is characterized in that, this LED epitaxial wafer reaction chamber also comprises an auxiliary area, and this auxiliary area is for carrying out annealing in process and/or LED epitaxial wafer is detected LED epitaxial wafer.
6. LED epitaxial wafer reaction chamber as claimed in claim 4, is characterized in that, this luminescent layer comprises multi layer quantum well.
7. the LED epitaxial wafer reaction chamber as described in any one in claim 1-6, it is characterized in that, this LED epitaxial wafer reaction chamber also comprises multiple gas curtain or demarcation strips for two regions of separating adjacent, and those demarcation strips can extend in LED epitaxial wafer reaction chamber to isolate those regions and to bounce back so that those regions are interconnected from this LED epitaxial wafer reaction chamber.
8. LED epitaxial wafer reaction chamber as claimed in claim 5, is characterized in that, LED epitaxial wafer is detected and comprises electroluminescence spectrum or the photoluminescence spectrum of testing this luminescent layer.
9. the LED epitaxial wafer reaction chamber as described in any one in claim 1-6, is characterized in that, those growth districts all have for heated substrate and the heater that works alone.
10. the LED epitaxial wafer reaction chamber as described in any one in claim 1-6, is characterized in that, this LED epitaxial wafer reaction chamber has an extract system that is used to those regions to vacuumize.
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| CN201210465057.XA CN103824801A (en) | 2012-11-16 | 2012-11-16 | LED epitaxial wafer reaction cavity |
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|---|---|---|---|
| CN201210465057.XA CN103824801A (en) | 2012-11-16 | 2012-11-16 | LED epitaxial wafer reaction cavity |
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| CN101665924A (en) * | 2008-09-04 | 2010-03-10 | 东京毅力科创株式会社 | Film deposition apparatus and substrate processing apparatus |
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| US20070218701A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
| CN101660138A (en) * | 2008-08-29 | 2010-03-03 | 东京毅力科创株式会社 | Activated gas injector, film deposition apparatus, and film deposition method |
| US20100050944A1 (en) * | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate process apparatus, and turntable |
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Application publication date: 20140528 |