CN203014754U - Composite substrate - Google Patents
Composite substrate Download PDFInfo
- Publication number
- CN203014754U CN203014754U CN201190000572XU CN201190000572U CN203014754U CN 203014754 U CN203014754 U CN 203014754U CN 201190000572X U CN201190000572X U CN 201190000572XU CN 201190000572 U CN201190000572 U CN 201190000572U CN 203014754 U CN203014754 U CN 203014754U
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- CN
- China
- Prior art keywords
- piezoelectric substrate
- substrate
- base plate
- composite base
- support substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
Abstract
The utility model relates to a composite substrate, comprising a piezoelectric substrate, a supporting substrate composed of spinels, and an organic adhesive layer for bonding the piezoelectric substrate and the supporting substrate. The Rt (roughness profile total height) of the bonding surface of the supporting substrate and the piezoelectric substrate is more than 5nm and less than 50nm.
Description
Technical field
The present invention relates to a kind of composite base plate.
Background technology
Up to now, known elastic wave device has: use in mobile phone etc. as the Lamb wave element of the surface acoustic wave device of filter element or oscillator performance function and use piezoelectric membrane or film bulk acoustic resonator device (FBAR:Film Bulk Acoustic Resonator) etc.Known these elastic wave devices have such structure: support substrate is bonded together with the piezoelectric substrate of propagating elastic wave, arrange on the surface of piezoelectric substrate can the excitating surface sound wave comb electrode.Wherein the thing of the bonding formation of support substrate and piezoelectric substrate is called composite base plate.Support substrate uses sapphire substrate more, but it has such shortcoming: because the hardness of sapphire substrate is high-leveled and difficult to be cut into the shape of regulation, cost is also higher.Consider these shortcomings, in recent years have and use the spinelle substrate as the suggestion (patent documentation 1) of support substrate.
[patent documentation 1] JP 2011-66818 communique
Summary of the invention
Yet, put down in writing as the 0021st section of patent documentation 1, thereby be difficult to use adhesive to form piezoelectric substrate on the first type surface of spinelle substrate.Therefore, do not use adhesive in patent documentation 1, but use Van der Waals force directly to engage.
The present invention completes in order to solve such problem, and main purpose is to provide composite base plate, and its support substrate that consists of by piezoelectric substrate with by spinelle is firmly bonding by organic adhesive layer.
Composite base plate of the present invention is taked following means in order to reach above-mentioned main purpose.
Composite base plate of the present invention has: piezoelectric substrate, the support substrate that is consisted of by spinelle and organic adhesive layer of bonding above-mentioned piezoelectric substrate and above-mentioned support substrate, in above-mentioned support substrate with the profile total height of the Rt(roughness profile of the adhesive surface of above-mentioned piezoelectric substrate) be below the above 50nm of 5nm.
In this composite base plate, owing to being below the above 50nm of 5nm with the Rt of the adhesive surface of piezoelectric substrate in support substrate, thereby the support substrate that consists of of piezoelectric substrate and spinelle to pass through organic adhesive layer firmly bonding.In addition, compare with the situation that piezoelectric substrate and support substrate directly engage, owing to there being organic adhesive layer, obtained to prevent the effect that ruptures by stress relaxation.
Description of drawings
Fig. 1 is the perspective view of composite base plate 10.
Fig. 2 is the A-A sectional view of Fig. 1.
Embodiment
Piezoelectric substrate in composite base plate of the present invention can be by the a kind of substrate that consists of that is selected from the group that such as lithium tantalate, lithium niobate, lithium niobate-lithium tantalate sosoloid monocrystal, lithium borate, LGS and crystal etc. form.The not specific restriction of the size of this piezoelectric substrate, for example diameter can be 10 ~ 500 μ m for 50 ~ 150mm, thickness.
Organic adhesive layer in composite base plate of the present invention can be for example that acrylic acid series adhesive layer or epoxy are adhesive layer.There is no particular limitation for the thickness of this organic adhesive layer, is for example 0.1 ~ 1.0 μ m owing to obtaining good frequency-temperature characteristic so preferred thickness.
Support substrate in composite base plate of the present invention is the substrate that is made of spinelle.In support substrate with the Rt of the adhesive surface of piezoelectric substrate below the above 50nm of 5nm.During the not enough 5nm of the Rt of this adhesive surface, when at high temperature processing composite base plate, piezoelectric substrate and support substrate have the possibility of peeling off, and be therefore not preferred; When surpassing 50 μ m, when at high temperature processing composite base plate, piezoelectric substrate has the possibility of breaking, and is therefore not preferred.The polycrystalline spinel of the oxide of spinelle preferably magnesium and aluminium.There is no particular limitation for the size of support substrate, but diameter can be 50 ~ 150mm, and thickness can be 100 ~ 500 μ m.
Below an example of composite base plate of the present invention is made in explanation.At first, by grinding the surface of support substrate, Rt is become below the above 50nm of 5nm.Then, the adhesive surface of washing piezoelectric substrate and support substrate is removed the impurity (oxide or adsorbent etc.) that adheres on this adhesive surface.Secondly, even coating organic bond on the one side at least of the adhesive surface of two substrates.Coating process can be enumerated as rotary coating etc.Then with two base plate bondings together, organic bond is in the situation of thermosetting resin, is heating and curing, and organic bond is that in the situation of light-cured resin, illumination makes curing.By organic adhesive layer indirectly in bonding situation, the thickness of preferred organic adhesive layer is 0.1 ~ 1.0 μ m like this.So just can obtain composite base plate of the present invention.
Composite base plate of the present invention is used for elastic wave device.Elastic wave device is known surface acoustic wave device, Lamb wave element, film bulk acoustic resonator device (FBAR) etc.For example, surface acoustic wave device refers to arrange on the surface of piezoelectric substrate the IDT(Interdigital Transducer of the input side of excitating surface sound wave) the IDT electrode of the outlet side of electrode (also referred to as comb electrode, interdigited electrode) and receiving surface sound wave.The IDT of input side electrode is upper outside when adding the high frequency signal, produce electric field between electrode, surface acoustic wave is excited, and propagates on piezoelectric substrate.So the IDT electrode of outlet side that can be by being arranged at the direction of propagation obtains the surface acoustic wave signal of being propagated with the form of the signal of telecommunication.Such elastic wave device for example adopts the Reflow Soldering operation when being installed on printed wiring board.In this Reflow Soldering operation, use in the situation of Pb-free solder, elastic wave device is heated to 260 ℃ of left and right, but due to the excellent heat resistance of the elastic wave device that has used composite base plate of the present invention, and has suppressed the generation of piezoelectric substrate and support substrate fracture.
Also can there be metal film at the piezoelectric substrate back side in composite base plate of the present invention.When making the Lamb wave element as elastic wave device, metal film plays near the effect of the electromechanical coupling factor the back side that increases piezoelectric substrate.At this moment, the surface of the piezoelectric substrate of Lamb wave element forms comb electrode, becomes the structure of the metal film that exposes piezoelectric substrate due to the cavity resonator that arranges on support substrate.The material of such metal film can be enumerated as aluminium, aluminium alloy, copper, gold etc.In addition, make in the situation of Lamb wave element, also can use to have the composite base plate that the back side does not have the piezoelectric substrate of metal film.
Also can there be metal film and dielectric film in the piezoelectric substrate back side in composite base plate of the present invention.Manufacturing is as the film bulk acoustic resonator device of elastic wave device the time, and metal film plays the effect of electrode.At this moment, the surperficial back side of the piezoelectric substrate of film bulk acoustic resonator device forms electrode, due to dielectric film as cavity resonator, and become the structure of the metal film that exposes piezoelectric substrate.As such metal film material, can enumerate as molybdenum, ruthenium, tungsten, chromium, aluminium etc.In addition, can enumerate as silicon dioxide, zinc oxide, phosphorosilicate glass, boron-phosphorosilicate glass etc. as insulating film material.
Embodiment
[embodiment 1]
Fig. 1 is the perspective view of composite base plate 10, and Fig. 2 is the A-A sectional view of Fig. 1.This composite base plate 10 is used for surface acoustic wave device, and 1 place forms planar rondure.This planar section is called directional plane (OF), in the manufacturing process of surface acoustic wave device, and the position of the wafer when carrying out all multioperations or direction etc.Composite base plate 10 have the piezoelectric substrate 12 that consisted of by the lithium tantalate that can propagate elastic wave (LT), therewith piezoelectric substrate 12 engage by spinelle (cube polycrystalline spinel, MgAL
2O
4) support substrate 14 that consists of, and engage two substrates 12,14 adhesive layer 16.The thick of piezoelectric substrate 12 is that 20 μ m, diameter are 4 inches (approximately 100mm).This piezoelectric substrate 12 is that 42 ° of Y cutting X propagate LT substrate (42Y-X LT).The thick of support substrate 14 is that 250 μ m, diameter are 4 inches.Adhesive layer 16 is acrylic adhesive cured layers, and thick is 0.6 μ m.
Below describe for the manufacture method of this composite base plate 10.At first, preparing is the support substrate that the polycrystalline spinel of 4 inches consists of as support substrate by diameter.In addition, preparing diameter as piezoelectric substrate is that 42 ° of Y cutting X of 4 inches propagate the LT substrates.Then, grind, in the polishing piezoelectric substrate and adhesive surface support substrate, make surface roughness Rt become 3nm.The thickness of the piezoelectric substrate after polishing is 250 μ m.On the other hand, by microdiamond grind, in the polishing support substrate with the adhesive surface of piezoelectric substrate, make Rt become 5nm.The thickness of the support substrate after polishing is 250 μ m.The scope of surrounding with the square of 10 μ m * 10 μ m in addition, is as measurement range, take JIS B601(2001) for benchmark mensuration Rt.Then use the rotary coating machine acrylic adhesive to be applied to the single face of each substrate.Then, make the coating adhesive face of two substrates in opposite directions, two substrates is bonded together, kept 30 minutes under 280 ℃.Obtain like this solidifying by acrylic adhesive the adhesive base plate of bonding two substrates of the adhesive layer that forms.Piezoelectric substrate in grinding, this adhesive base plate of polishing makes its thickness become 20 μ m, obtains the composite base plate 10 of 10 embodiment 1.
[embodiment 2]
Grind, in the support substrate in polishing embodiment 1 with the adhesive surface of piezoelectric substrate, making Rt is 45nm, identical with embodiment 1 in addition, obtains 10 composite base plates 10.
[comparative example 1]
Grind, in the support substrate in polishing embodiment 1 with the adhesive surface of piezoelectric substrate, making Rt is 2nm, identical with embodiment 1 in addition, obtains 10 composite base plates 10.
[comparative example 2]
Grind, in the support substrate in polishing embodiment 1 with the adhesive surface of piezoelectric substrate, making Rt is 60nm, identical with embodiment 1 in addition, obtains 10 composite base plates 10.
[evaluation]
Respectively with embodiment 1,2 and comparative example 1,2 composite base plate 10 each 10 ground put into baking oven, placed 1 hour under 280 ℃.It the results are shown in Table 1.Determine by table 1, embodiment 1,2 composite base plate 10 are not seen bad phenomenon, and piezoelectric substrate and support substrate are by firmly bonding.On the other hand, the piezoelectric substrate in comparative example 1 is peeled off mutually with support substrate.In addition, the piezoelectric substrate in comparative example 2 has broken.Think that the reason that piezoelectric substrate breaks is, because Rt surpasses 50nm, there is the darker small hole of the degree of depth in the part, sneaked into bonding piezoelectric substrate and support substrate under the state of air in small hole, by high-temperature process, air wherein expands, thereby causes breaking of piezoelectric substrate.In addition, because arithmetic average roughness Ra is mean value, so be not the index that whether has the darker small hole of the degree of depth.For example, even Ra is 40nm, sometimes also exist the degree of depth to surpass the darker small hole of 50nm.
[table 1]
| ? | Rt(nm) | State after high-temperature process |
| Embodiment 1 | 5 | 10 all good |
| Embodiment 2 | 45 | 10 all good |
| Comparative example 1 | 2 | The piezoelectric substrate of 3 in 10 is peeled off mutually with support substrate |
| Comparative example 2 | 60 | The piezoelectric substrate of 10 all breaks |
The application advocates priority based on the U.S. Provisional Application 61/354837 of application on June 15th, 2010, and by reference, this specification contains its whole content.
Utilize possibility on industry
Composite base plate of the present invention can be used for elastic wave devices such as surface acoustic wave device, Lamb wave element, film bulk acoustic resonator device (FBAR).
Claims (3)
1. a composite base plate, have
Piezoelectric substrate,
The support substrate that is consisted of by spinelle with
Organic adhesive layer of bonding described piezoelectric substrate and described support substrate,
The Rt of in described support substrate and adhesive surface described piezoelectric substrate, that is, the profile total height of roughness profile is below the above 50nm of 5nm.
2. the composite base plate described according to claim 1, described spinelle is the polycrystalline spinel of the oxide of magnesium and aluminium.
3. the composite base plate described according to claim 1 and 2, the thickness of described organic adhesive layer be 0.1 μ m above, below 1.0 μ m.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35483710P | 2010-06-15 | 2010-06-15 | |
| US61/354,837 | 2010-06-15 | ||
| PCT/JP2011/062246 WO2011158636A1 (en) | 2010-06-15 | 2011-05-27 | Composite substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203014754U true CN203014754U (en) | 2013-06-19 |
Family
ID=45348045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201190000572XU Expired - Lifetime CN203014754U (en) | 2010-06-15 | 2011-05-27 | Composite substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3184763U (en) |
| CN (1) | CN203014754U (en) |
| WO (1) | WO2011158636A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104396142A (en) * | 2012-07-12 | 2015-03-04 | 日本碍子株式会社 | Composite substrate, piezoelectric device and method of manufacturing composite substrate |
| CN106182152A (en) * | 2014-08-21 | 2016-12-07 | 三星钻石工业股份有限公司 | The dividing method of composite base plate and segmenting device |
| CN109672420A (en) * | 2018-12-18 | 2019-04-23 | 北方民族大学 | The multi-layer piezoelectric substrate and preparation method thereof of magnesium alloy film is set |
| CN113690365A (en) * | 2021-07-23 | 2021-11-23 | 绍兴中芯集成电路制造股份有限公司 | Piezoelectric device and method for manufacturing the same |
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| US20170182749A1 (en) * | 2014-02-07 | 2017-06-29 | Ceram Tec-Etec Gmbh | Substrate ceramic laminate |
| WO2017163729A1 (en) | 2016-03-25 | 2017-09-28 | 日本碍子株式会社 | Bonded body and elastic wave element |
| KR102428548B1 (en) | 2016-03-25 | 2022-08-04 | 엔지케이 인슐레이터 엘티디 | Bonding method |
| DE112018000012B4 (en) | 2017-03-31 | 2019-11-07 | Ngk Insulators, Ltd. | Connected bodies and acoustic wave devices |
| TWI791099B (en) | 2018-03-29 | 2023-02-01 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
| TWI787475B (en) | 2018-03-29 | 2022-12-21 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
| DE112019002418B4 (en) | 2018-06-22 | 2022-06-15 | Ngk Insulators, Ltd. | Connected body and elastic wave element |
| WO2022259591A1 (en) * | 2021-06-09 | 2022-12-15 | 日本碍子株式会社 | Composite substrate and composite substrate manufacturing method |
| CN115943565A (en) | 2021-06-09 | 2023-04-07 | 日本碍子株式会社 | Composite substrate and method for manufacturing composite substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003152236A (en) * | 1994-06-03 | 2003-05-23 | Ngk Insulators Ltd | Ceramic diaphragm structure and its manufacturing method |
| JP4783558B2 (en) * | 2003-07-22 | 2011-09-28 | 日本碍子株式会社 | Actuator device |
| JP2007134889A (en) * | 2005-11-09 | 2007-05-31 | Shin Etsu Chem Co Ltd | Composite piezoelectric substrate |
| WO2009072585A1 (en) * | 2007-12-05 | 2009-06-11 | Asahi Glass Co., Ltd. | Process for production of crystalline kln film, process for production of semiconductor device, and semiconductor device |
| JP4956569B2 (en) * | 2008-04-15 | 2012-06-20 | 日本碍子株式会社 | Surface acoustic wave device |
-
2011
- 2011-05-27 JP JP2013600008U patent/JP3184763U/en not_active Expired - Lifetime
- 2011-05-27 WO PCT/JP2011/062246 patent/WO2011158636A1/en active Application Filing
- 2011-05-27 CN CN201190000572XU patent/CN203014754U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104396142A (en) * | 2012-07-12 | 2015-03-04 | 日本碍子株式会社 | Composite substrate, piezoelectric device and method of manufacturing composite substrate |
| CN106182152A (en) * | 2014-08-21 | 2016-12-07 | 三星钻石工业股份有限公司 | The dividing method of composite base plate and segmenting device |
| CN109672420A (en) * | 2018-12-18 | 2019-04-23 | 北方民族大学 | The multi-layer piezoelectric substrate and preparation method thereof of magnesium alloy film is set |
| CN113690365A (en) * | 2021-07-23 | 2021-11-23 | 绍兴中芯集成电路制造股份有限公司 | Piezoelectric device and method for manufacturing the same |
| CN113690365B (en) * | 2021-07-23 | 2024-02-13 | 绍兴中芯集成电路制造股份有限公司 | Piezoelectric device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011158636A1 (en) | 2011-12-22 |
| JP3184763U (en) | 2013-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130619 |