CN203011995U - System for measuring open-circuit voltage of planar thin-film thermoelectric device - Google Patents

System for measuring open-circuit voltage of planar thin-film thermoelectric device Download PDF

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Publication number
CN203011995U
CN203011995U CN 201220741003 CN201220741003U CN203011995U CN 203011995 U CN203011995 U CN 203011995U CN 201220741003 CN201220741003 CN 201220741003 CN 201220741003 U CN201220741003 U CN 201220741003U CN 203011995 U CN203011995 U CN 203011995U
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China
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sample stage
thermoelectric device
film thermoelectric
thin film
sample
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王汉夫
官爱强
李振伟
褚卫国
郭延军
李晓军
金灏
祖敏
刘秀
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National Center for Nanosccience and Technology China
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National Center for Nanosccience and Technology China
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Abstract

The utility model discloses a system for measuring an open-circuit voltage of a planar thin-film thermoelectric device. The system comprises a sample test rack (8), a voltage measuring device and a temperature control device. The planar thin-film thermoelectric device (19) is fixed on the sample test rack (8), the voltage measuring device is connected with the planar thin-film thermoelectric device (19) to measure the open-circuit voltage of the planar thin-film thermoelectric device (19), and the temperature control device is connected with the planar thin-film thermoelectric device (19) to control a hot junction of the planar thin-film thermoelectric device (19) to be at a first preset temperature and a cold junction of the planar thin-film thermoelectric device (19) to be at a second preset temperature. The system of the utility model can measure the open-circuit voltage of the planar thin-film thermoelectric device, and especially can measure the change of the open-circuit voltage of the planar thin-film thermoelectric device along with a temperature difference of the two ends of the planar thin-film thermoelectric device (19) under the atmosphere environment.

Description

A kind of system of measurement plane type thin film thermoelectric device open-circuit voltage
Technical field
The utility model relates to plane thin film thermoelectric device, particularly, relates to a kind of system of measurement plane type thin film thermoelectric device open-circuit voltage.
Background technology
Thermo-electric device can be realized the direct conversion of heat energy and electric energy.The thin film thermoelectric device generally can be divided into plane (in-plane) and two kinds of structures of vertical-type (cross-plane).When existing the temperature difference, the two ends of thermo-electric device will because Seebeck effect produces a voltage, be called open-circuit voltage at this voltage that does not have to be measured under the external load condition.Become possibility along with utilizing thin film technique to make thermo-electric device, the thin film thermoelectric device also comes more to receive publicity, this is that film preparing technology due to maturation has a variety of, and the making of thin film technology and thin film thermoelectric device can be compatible with existing semiconductor processing technology, be conducive to develop the minisize thermoelectric device, thereby can be applied even more extensively at many key areas such as biomedicine, electronics, photoelectron, space flight, national defence.
For the measurement of plane thin film thermoelectric device open-circuit voltage, there is no at present feasible commercial technology scheme.
The utility model content
The purpose of this utility model is to provide a kind of system of measurement plane type thin film thermoelectric device open-circuit voltage, this device can be at default temperature measurement plane type thin film thermoelectric device open-circuit voltage.
The utility model provides a kind of system of measurement plane type thin film thermoelectric device open-circuit voltage, and this system comprises sample testing frame, voltage measuring apparatus and temperature control equipment; Described plane thin film thermoelectric device is fixed on described sample testing frame; Described voltage measuring apparatus is connected with described plane thin film thermoelectric device, is used for measuring the open-circuit voltage of described plane thin film thermoelectric device; Described temperature control equipment is connected with described plane thin film thermoelectric device, and the cold junction that is in the first preset temperature and described plane thin film thermoelectric device for the hot junction of controlling described plane thin film thermoelectric device is in the second preset temperature.
Preferably, described sample testing frame comprises sample stage bracing frame, hot junction sample stage and cold junction sample stage; Described hot junction sample stage and described cold junction sample stage lay respectively at the top of described sample stage bracing frame; Has the gap between described hot junction sample stage and described cold junction sample stage; The hot junction of described plane thin film thermoelectric device is fixed on the sample stage of described hot junction, and the cold junction of described plane thin film thermoelectric device is fixed on described cold junction sample stage.
Preferably, described hot junction sample stage and described cold junction sample stage have the gap in the horizontal direction.
Preferably, described sample support frame comprises substrate, the first support bar, the second support bar, the first support bar pedestal, the second support bar pedestal, the first sample stage back up pad and the second sample stage back up pad; Described the first support bar pedestal is positioned on described substrate, and described the first support bar is positioned on described the first support bar pedestal, and described the first sample stage back up pad is positioned at the top of described the first support bar; Described the second support bar pedestal is positioned on described substrate, and described the second support bar is positioned on described the second support bar pedestal, and described the second sample stage back up pad is positioned at the top of described the second support bar.
Preferably, described hot junction sample stage comprises the first copper coin, the first ceramic heating flake, the first heating plate fixed head and the first sample stator; Described the first copper coin is positioned on described the first sample stage back up pad; Described the first ceramic heating flake is between described the first copper coin and described the first heating plate fixed head; Described the first sample stator is positioned on the medial region of described the first copper coin.
Preferably, described hot junction sample stage comprises the first copper coin, the first water-cooling head, the first ceramic heating flake, the first heating plate fixed head and the first sample stator; Described the first copper coin is positioned on described the first water-cooling head, and described the first water-cooling head is positioned on described the first sample stage back up pad; Described the first ceramic heating flake is between described the first copper coin and described the first heating plate fixed head; Described the first sample stator is positioned on the medial region of described the first copper coin; Described cold junction sample stage comprises the second copper coin, the second water-cooling head, the second ceramic heating flake, the second heating plate fixed head and the second sample stator; Described the second copper coin is positioned on described the second water-cooling head, and described the second water-cooling head is positioned on described the second sample stage back up pad; Described the second ceramic heating flake is between described the second copper coin and described the second heating plate fixed head; Described the second sample stator is positioned on the medial region of described the second copper coin.
Preferably, the hot junction of the fixing described plane thin film thermoelectric device of described the first sample stator, the cold junction of the fixing described plane thin film thermoelectric device of described the second sample stator.
Preferably, described the first water-cooling head and the first water-circulating pump be connected heating radiator and be connected, described the second water-cooling head and the second water-circulating pump be connected heating radiator and be connected.
Preferably, this system also comprises the first stainless steel brace and/or the second stainless steel brace; One end of described the first stainless steel brace is fixed on the sample stage of hot junction, and the other end of described the first stainless steel brace is fixed on described the first sample stage back up pad; One end of described the second stainless steel brace is fixed on the cold junction sample stage, and the other end of described the second stainless steel brace is fixed on described the second sample stage back up pad.
Preferably, the middle part of the middle part of described the first sample stage back up pad with through hole and/or second sample stage back up pad has through hole.
Preferably, this system also comprises be used to the first thermopair of the hot-side temperature of measuring described plane thin film thermoelectric device and is used for measuring the second thermopair of the cold junction temperature of described plane thin film thermoelectric device.
Preferably, described temperature control equipment is the first temperature controller and the second temperature controller, described the first temperature controller and described the first thermopair and described the first ceramic heating flake consist of backfeed loop, and described the second temperature controller and described the second thermopair and described the second ceramic heating flake consist of backfeed loop.
Preferably, described temperature control equipment is computing machine; This system also comprises the first programmable power supply and the second programmable power supply; Described computing machine and described the first thermopair, described the first ceramic heating flake and the first programmable power supply consist of backfeed loop; Described computing machine also consists of backfeed loop with described the second thermopair, described the second ceramic heating flake and the second programmable power supply; Described the first programmable power supply is connected with the first ceramic heating flake, and described the second programmable power supply is connected with the second ceramic heating flake.
By technique scheme, the open-circuit voltage that the utility model can measurement plane type thin film thermoelectric device especially can be in the variation with the plane thin film thermoelectric device two ends temperature difference of the open-circuit voltage of measurement plane type thin film thermoelectric device under atmospheric conditions.The system of the measurement plane type thin film thermoelectric device open-circuit voltage that the utility model provides is easy and simple to handle, and automaticity is high, and testing cost is low.
Other feature and advantage of the present utility model will partly be described in detail in embodiment subsequently.
Description of drawings
Accompanying drawing is to be used to provide further understanding of the present utility model, and consists of the part of instructions, is used from explanation the utility model with following embodiment one, but does not consist of restriction of the present utility model.In the accompanying drawings:
Fig. 1 a is the side view of the sample stage bracing frame that provides of the utility model;
Fig. 1 b is the vertical view of the sample stage bracing frame that provides of the utility model;
Fig. 2 a is the side view of the sample testing frame that provides of the utility model;
Fig. 2 b is the vertical view of the sample testing frame that provides of the utility model;
Fig. 3 is the plane thin film thermoelectric device schematic diagram that the utility model provides;
Fig. 4 is plane thin film thermoelectric device open-circuit voltage instrumentation plan;
Fig. 5 is another plane thin film thermoelectric device open-circuit voltage instrumentation plan;
Fig. 6 is the open-circuit voltage of plane thin film thermoelectric device and the schematic diagram of its two ends temperature difference relation.
Description of reference numerals
1 sample stage bracing frame 2 substrates
3 first support bar the 3 ' second support bars
4 first support bar pedestal the 4 ' second support bar pedestals
5 first sample stage back up pad the 5 ' second sample stage back up pads
6 through hole 7 fastener holes
8 sample testing frame 9 hot junction sample stages
10 cold junction sample stage 11 first copper coins
The 11 ' second copper coin 12 water-cooling heads
13 water inlet 14 water delivering orifices
15 first ceramic heating flake the 15 ' second ceramic heating flakes
16 first heating plate fixed head the 16 ' second heating plate fixed heads
17 first sample stator the 17 ' second sample stators
18 first stainless steel brace the 18 ' second stainless steel braces
19 plane thin film thermoelectric device 20 first thermopairs
The 20 ' second thermopair 21 first wires
22 N-shaped thermoelectric arm 23 p-type thermoelectric arms
24 electrode 25 water-circulating pumps
26 heating radiator 27 computing machines
28 first temperature controller 29 second temperature controllers
30 first voltage table 31 thermopair reference edges
32 platinum resistance 33 temperature indicators
34 first programmable power supply 35 second programmable power supplys
36 second voltage table 37 tertiary voltage tables
38 second wires
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is elaborated.Should be understood that, embodiment described herein only is used for description and interpretation the utility model, is not limited to the utility model.
Open-circuit voltage for the ease of measurement plane type thin film thermoelectric device, especially can be at the open-circuit voltage of measurement plane type thin film thermoelectric device under atmospheric conditions, the utility model provides a kind of system of measurement plane type thin film thermoelectric device open-circuit voltage, this system comprises sample testing frame 8, voltage measuring apparatus (for example the first voltage table 30) and temperature control equipment (for example the first temperature controller 28, the second temperature controller 29); Described plane thin film thermoelectric device 19 is fixed on described sample testing frame 8; Described voltage measuring apparatus is connected with described plane thin film thermoelectric device 19, is used for measuring the open-circuit voltage of described plane thin film thermoelectric device 19; Described temperature control equipment is connected with described plane thin film thermoelectric device 19, and the cold junction that is in the first preset temperature and described plane thin film thermoelectric device 19 for the hot junction of controlling described plane thin film thermoelectric device 19 is in the second preset temperature.
Sample testing frame 8 comprises sample stage bracing frame 1, hot junction sample stage 9 and cold junction sample stage 10, and described hot junction sample stage 9 and described cold junction sample stage 10 lay respectively at the top of described sample stage bracing frame; Has the gap between described hot junction sample stage 9 and described cold junction sample stage 10.Sample stage bracing frame 1 comprises substrate 2, the first support bar 3, the second support bar 3 ', the first support bar pedestal 4, the second support bar pedestal the 4 ', the first sample stage back up pads 5, and the second sample stage back up pad 5 '.These parts can be made by stainless steel, and are installed together by screw, and can mount and dismount easily.As shown in Fig. 1 a and Fig. 1 b, described the first support bar pedestal 4 is positioned on described substrate 2, and described the first support bar 3 is positioned on described the first support bar pedestal 4, and described the first sample stage back up pad 5 is positioned at the top of described the first support bar 3; Described the second support bar pedestal 4 ' is positioned on described substrate 2, and described the second support bar 3 ' is positioned on described the second support bar pedestal 4 ', and described the second sample stage back up pad 5 ' is positioned at the top of described the second support bar 3 '.
Fig. 2 shows the schematic diagram of sample testing frame 8.Hot junction sample stage 9 can comprise the first copper coin 11, the water-cooling head that water-cooling head 12(heat supply end sample stage uses can be called the first water-cooling head, and can be called the second water-cooling head for the water-cooling head of cold junction sample stage), the first ceramic heating flake 15, the first heating plate fixed head 16, and the first sample stator 17.Described the first copper coin 11 is positioned on described the first water-cooling head, and described the first water-cooling head is positioned on described the first sample stage back up pad 5; Described the first ceramic heating flake 15 is between described the first copper coin 11 and described the first heating plate fixed head 16; Described the first sample stator 17 is positioned on the medial region of described the first copper coin 11.Wherein, hot junction sample stage 9 can save water-cooling head 12.Cold junction sample stage 10 can comprise the second copper coin 11 ', water-cooling head 12(can be called the second water-cooling head for the water-cooling head of cold junction sample stage, and the water-cooling head that the heat supply end sample stage uses can be called the first water-cooling head), the second ceramic heating flake 15 ', the second heating plate fixed head 16 ', and the second sample stator 17 '.Described the second copper coin 11 ' is positioned on described the second water-cooling head, and described the second water-cooling head is positioned on described the second sample stage back up pad 5 '; Described the second ceramic heating flake 15 ' is positioned between described the second copper coin 11 ' and described the second heating plate fixed head 16 '; Described the second sample stator 17 ' is positioned on the medial region of described the second copper coin 11 '.
One end of the first stainless steel brace 18 is connected with hot junction sample stage 9 by screw, and an other end of the first stainless steel brace 18 utilizes fastener hole 7 to be fixed on the first sample stage back up pad 5.One end of the second stainless steel brace 18 ' is connected with cold junction sample stage 10 by screw, and an other end of the second stainless steel brace 18 ' utilizes fastener hole 7 to be fixed on the second sample stage back up pad 5 '.Plane thin film thermoelectric device 19 is placed between hot junction sample stage 9 and cold junction sample stage 10, by regulating the first stainless steel brace 18 in the fixed position on the first sample stage back up pad 5 and/or the fixed position of the second stainless steel brace 18 ' on the second sample stage back up pad 5 ', can change the relative distance between cold junction sample stage 10 and hot junction sample stage 9, thereby adapt to the device under test of different length size.The hot junction of the fixing described plane thin film thermoelectric device of described the first sample stator, the cold junction of the fixing described plane thin film thermoelectric device of described the second sample stator.
In measuring process, the heat interchange between sample stage and sample stage bracing frame should be as much as possible little, to guarantee temperature-controlled precision, avoids simultaneously the sample stage bracing frame unnecessarily to be heated.In order to reach this purpose, designed through hole 6 on the first sample stage back up pad 5 of the present utility model and the second sample stage back up pad 5 ', make between sample stage and the first sample stage back up pad 5 and the second sample stage back up pad 5 ' except being connected by the first stainless steel brace 18 and the second stainless steel brace 18 ', there is no other direct contacts.Through hole 6 can provide the path of water-cooling head 12 water inlet pipes 13 and rising pipe 14 simultaneously.
Fig. 3 has shown the schematic diagram of a plane thin film thermoelectric device 19 to be measured, it is cascaded to N-shaped thermoelectric arm 22 and p-type thermoelectric arm 23 by some, these thermoelectric arms are parallel to the thermograde direction, connect with electrode 24 between adjacent N-shaped thermoelectric arm and p-type thermoelectric arm.Be used for the temperature in measurement plane type thin film thermoelectric device hot junction near the hot junction electrode of plane thin film thermoelectric device 19 with the fixing a pair of thermopair 20 of elargol, be used for the temperature of measurement plane type thin film thermoelectric device cold junction near the cold junction electrode of plane thin film thermoelectric device 19 with the fixing a pair of thermopair 20 ' of elargol.The first wire 21 is connected with the open-circuit voltage of measurement plane type thin film thermoelectric device with the output terminal of plane thin film thermoelectric device respectively.The cold junction of the hot junction of plane thin film thermoelectric device 19 and plane thin film thermoelectric device 19 is placed in respectively on hot junction sample stage 9 and cold junction sample stage 10.
Fig. 4 shows plane thin film thermoelectric device open-circuit voltage instrumentation plan.The temperature of hot junction sample stage 9 and cold junction sample stage 10 can be controlled respectively by the first temperature controller 28 and the second temperature controller 29, in this case, described the first temperature controller 28 consists of backfeed loop with described the first thermopair 20 and described the first ceramic heating flake 15, and described the second temperature controller 29 consists of backfeed loop with described the second thermopair 20 ' and described the second ceramic heating flake 15 '.The first temperature controller 28 and the second temperature controller 29 passing ratios-integration-differential (proportionalintegral-derivative, PID) pattern is stabilized in the first preset temperature with plane thin film thermoelectric device 19 hot junctions, and plane thin film thermoelectric device 19 cold junctions are stabilized in the second preset temperature.
Fig. 5 shows another plane thin film thermoelectric device open-circuit voltage instrumentation plan.The first thermopair 20 of hot junction sample stage 9 sides, the first ceramic heating flake 15, read the second voltage table 36 of thermocouple signal, the first programmable power supply 34 that is connected with the first ceramic heating flake 15, consist of together backfeed loop with computing machine 27, the temperature stabilization in the computer program control plane type thin film thermoelectric device hot junction by computing machine by comprising pid algorithm is at the first preset temperature.The second thermopair 20 ' of cold junction sample stage 10 sides, the second ceramic heating flake 15 ', read the tertiary voltage table 36 of thermocouple signal, the second programmable power supply 34 that is connected with the second ceramic heating flake 15 ', consist of together backfeed loop with computing machine 27, the temperature stabilization of the computer program control plane type thin film thermoelectric device cold junction by computing machine by comprising pid algorithm is at the second preset temperature
In Fig. 4 and plane thin film thermoelectric device open-circuit voltage metering system shown in Figure 5, the water-cooling head 12 of cold junction sample stage can be connected with heating radiator 26 with water-circulating pump 25 can be constant near room temperature with the temperature that guarantees the cold junction sample stage; The open-circuit voltage of plane thin film thermoelectric device 19 can be measured by the first voltage table 30.Computing machine 27 can be connected by interface and various instrument (as the first voltage table 30, second voltage table 36, tertiary voltage table 37, the first temperature controller 28, the second temperature controllers 29, perhaps the first programmable power supply 34, and the second programmable power supply 35 etc.).
Utilize the system of the above-mentioned measurement plane type thin film thermoelectric device open-circuit voltage that the utility model provides, the utility model measured selected plane thin film thermoelectric device open-circuit voltage under atmospheric environment with the relation of difference variation, specific implementation is as described below.
Selected plane thin film thermoelectric device is comprised of 20 pairs of p-type thermoelectric arms 23 and N-shaped thermoelectric arm 22 as shown in Figure 3.N-shaped thermoelectric arm 22 and p-type thermoelectric arm 23 are deposited on the glass sheet of 22cm * 40mm size by the stainless steel mask plate by magnetically controlled sputter method respectively and make, and wherein the proportioning of p-type semiconductor target is Bi 0.5Sb 1.5Te 3Add the approximately Te of 4wt%, the proportioning of N-shaped semiconductor target is Bi 2Te 2.7Se 0.3Electrode 24 deposits through the mode of metal evaporation by the stainless steel mask plate and forms.
Shown in Fig. 1 a and Fig. 1 b, with CARBURIZING FURNACE FOR STAINLESS FASTENER, substrate 2, the first support bar 3, the second support bar 3 ', the first support bar pedestal 4, the second support bar pedestal the 4 ', the first sample stage back up pads 5 and the second sample stage back up pad 5 ' are fitted together.
Shown in Fig. 2 a and Fig. 2 b, the first copper coin 11, the first ceramic heating flake 15, the first heating plate fixed head 16, the first sample stator 17 use CARBURIZING FURNACE FOR STAINLESS FASTENERs are fitted together, consist of hot junction sample stage 9; With the second copper coin 11 ', water-cooling head 12, the second heating plate fixed head the 16 ', the second sample stators 17 ' fit together with CARBURIZING FURNACE FOR STAINLESS FASTENER, consist of cold junction sample stage 10.
Hot junction sample stage 9 is fixed on the first sample stage back up pad 5 by the first stainless steel brace 18, for example with CARBURIZING FURNACE FOR STAINLESS FASTENER, hot junction sample stage 9 is fixed on the first stainless steel brace 18; Cold junction sample stage 10 is fixed on the second sample stage back up pad 5 ' by the second stainless steel brace 18 ', for example with CARBURIZING FURNACE FOR STAINLESS FASTENER, cold junction sample stage 10 is fixed on two stainless steel braces 18 '.Can be according to the position of the first stainless steel brace 18 in fastener hole 7, and the distance between hot junction sample stage 9 and cold junction sample stage 10 is adjusted in the position of the second stainless steel brace 18 ' in fastener hole 7.
The water-cooling head 12 of cold junction sample stage 10 is coupled together with water-circulating pump 25 and heating radiator 26 water pipes, start water circulating pump.
Hot junction at plane thin film thermoelectric device 19 is fixed the first thermopair 20 near the place of electrode 24 with elargol, fixes second thermopair 20 ' near the place of electrode 24 with elargol at the cold junction of plane thin film thermoelectric device 19; Another two output terminals of device that two wires 21 are connected to elargol are used for the measurement of open-circuit voltage.
The hot junction of plane thin film thermoelectric device 19 is placed on hot junction sample stage 9, the cold junction of plane thin film thermoelectric device 19 is placed on cold junction sample stage 10, with the first sample stator 17 and the second sample stator 17 ', that plane thin film thermoelectric device 19 is fixing.
Specimen frame 8 and measurement instrument and computing machine 27 are coupled together.Wherein the first voltage table 30, second voltage table 36 and tertiary voltage table 37 can be the Keithley2000 multimeters, and the first programmable power supply 34 and the second programmable power supply 35 can be Kepco ABC125-1DM power supplys.The first thermopair 20 extends out by thermocouple wire, and is connected with second voltage table 36 by copper conductor 38, is used for reading the thermometric voltage signal in hot junction; The second thermopair 20 ' extends out by thermocouple wire, and is connected with tertiary voltage table 37 by copper conductor 38, is used for reading the thermometric voltage signal of cold junction.The tie point of thermocouple wire and copper cash and one are placed on copper billet in thermal insulation material (but the thermo-contact electrical isolation closely of 105mm * 65mm * 20mm); This copper billet is the reference edge 31 of the first thermopair 20 and the second thermopair 20 ', its temperature T 0(room temperature) measured in real time by a platinum-resistance thermometer 32, and read by temperature indicator 33; Computer software is according to temperature T 0, and the thermometric voltage signal of the first thermopair 20 and the second thermopair 20 ' is carried out cold junction compensation, obtains the temperature in plane thin film thermoelectric device hot junction and the temperature of plane thin film thermoelectric device cold junction.In compensation process, standard temperature by this thermopair (for example T-shaped thermopair)-voltage corresponding relation, T0 is converted into corresponding thermocouple voltages value (take freezing point as reference point), to be worth the thermometric voltage signal addition with the first thermopair 20 or the second thermopair 20 ', voltage-vs. temperature by this type thermopair is converted into a corresponding temperature again, is the true temperature that the first thermopair 20 or the second thermopair 20 ' measure.
Open computing machine 27, the temperature of setting plane thin film thermoelectric device 19 cold junctions is 300K, the temperature in plane thin film thermoelectric device 19 hot junctions is up to 360K, maintained the temperature of setting by the computer control temperature, for example, the temperature in plane thin film thermoelectric device 19 hot junctions can be 310K, 320K, 330K, 340K, 350K and 360K.The open-circuit voltage Δ V of computer recording device under different temperature difference conditions.What Fig. 6 showed is the variation of open-circuit voltage Δ V under different temperature difference T of this plane thin film thermoelectric device 19, and when Δ T was the 60K left and right, open-circuit voltage was greater than 0.1V.
Below describe by reference to the accompanying drawings preferred implementation of the present utility model in detail; but; the utility model is not limited to the detail in above-mentioned embodiment; in technical conceive scope of the present utility model; can carry out multiple simple variant to the technical solution of the utility model, these simple variant all belong to protection domain of the present utility model.
Need to prove in addition, each concrete technical characterictic described in above-mentioned embodiment in reconcilable situation, can make up by any suitable mode, for fear of unnecessary repetition, the utility model is to the explanation no longer separately of various possible array modes.
In addition, also can carry out combination in any between various embodiment of the present utility model, as long as it is without prejudice to thought of the present utility model, it should be considered as content disclosed in the utility model equally.

Claims (13)

1. the system of a measurement plane type thin film thermoelectric device open-circuit voltage, is characterized in that, this system comprises sample testing frame (8), voltage measuring apparatus and temperature control equipment;
Described plane thin film thermoelectric device (19) is fixed on described sample testing frame (8);
Described voltage measuring apparatus is connected with described plane thin film thermoelectric device (19), is used for measuring the open-circuit voltage of described plane thin film thermoelectric device (19);
Described temperature control equipment is connected with described plane thin film thermoelectric device (19), and the cold junction that is in the first preset temperature and described plane thin film thermoelectric device for the hot junction of controlling described plane thin film thermoelectric device is in the second preset temperature.
2. system according to claim 1, is characterized in that, described sample testing frame (8) comprises sample stage bracing frame (1), hot junction sample stage (9) and cold junction sample stage (10); Described hot junction sample stage (9) and described cold junction sample (10) platform lay respectively at the top of described sample stage bracing frame (1); Has the gap between described hot junction sample stage (9) and described cold junction sample stage (10); The hot junction of described plane thin film thermoelectric device (19) is fixed on the sample stage of described hot junction, and the cold junction of described plane thin film thermoelectric device (19) is fixed on described cold junction sample stage.
3. system according to claim 2, is characterized in that, described hot junction sample stage (9) and described cold junction sample stage (10) have the gap in the horizontal direction.
4. system according to claim 2, it is characterized in that, described sample support frame (1) comprises substrate (2), the first support bar (3), the second support bar (3 '), the first support bar pedestal (4), the second support bar pedestal (4 '), the first sample stage back up pad (5) and the second sample stage back up pad (5 ');
Described the first support bar pedestal (4) is positioned on described substrate (2), and described the first support bar (3) is positioned on described the first support bar pedestal (4), and described the first sample stage back up pad (5) is positioned at the top of described the first support bar (3);
Described the second support bar pedestal (4 ') is positioned on described substrate (2), and described the second support bar (3 ') is positioned on described the second support bar pedestal (4 '), and described the second sample stage back up pad (5 ') is positioned at the top of described the second support bar (3 ').
5. system according to claim 4, is characterized in that, described hot junction sample stage (9) comprises the first copper coin (11), the first ceramic heating flake (15), the first heating plate fixed head (16) and the first sample stator (17);
Described the first copper coin (11) is positioned on described the first sample stage back up pad (5); Described the first ceramic heating flake (15) is positioned between described the first copper coin (11) and described the first heating plate fixed head (16); Described the first sample stator (17) is positioned on the medial region of described the first copper coin (11).
6. system according to claim 4, is characterized in that, described hot junction sample stage comprises the first copper coin (11), the first water-cooling head, the first ceramic heating flake (15), the first heating plate fixed head (16) and the first sample stator (17);
Described the first copper coin (11) is positioned on described the first water-cooling head, and described the first water-cooling head (12) is positioned on described the first sample stage back up pad (5); Described the first ceramic heating flake (15) is positioned between described the first copper coin (11) and described the first heating plate fixed head (16); Described the first sample stator (17) is positioned on the medial region of described the first copper coin (11);
Described cold junction sample stage comprises the second copper coin (11 '), the second water-cooling head, the second ceramic heating flake (15 '), the second heating plate fixed head (16 ') and the second sample stator (17 ');
Described the second copper coin (11 ') is positioned on described the second water-cooling head, and described the second water-cooling head is positioned on described the second sample stage back up pad (5 '); Described the second ceramic heating flake (15 ') is positioned between described the second copper coin (11 ') and described the second heating plate fixed head (16 '); Described the second sample stator (17 ') is positioned on the medial region of described the second copper coin (11 ').
7. according to claim 5 or 6 described systems, it is characterized in that, the hot junction of the fixing described plane thin film thermoelectric device (19) of described the first sample stator (17), the cold junction of the fixing described plane thin film thermoelectric device (19) of described the second sample stator (17 ').
8. system according to claim 6, is characterized in that, described the first water-cooling head and the first water-circulating pump be connected heating radiator and be connected, described the second water-cooling head and the second water-circulating pump be connected heating radiator and be connected.
9. system according to claim 5, is characterized in that, this system also comprises the first stainless steel brace (18) and/or the second stainless steel brace (18 '); One end of described the first stainless steel brace (18) is fixed on hot junction sample stage (9), and the other end (18 ') of described the first stainless steel brace is fixed on described the first sample stage back up pad (5);
One end of described the second stainless steel brace (18 ') is fixed on cold junction sample stage (10), and the other end of described the second stainless steel brace (18 ') is fixed on described the second sample stage back up pad (5 ').
10. system according to claim 5, is characterized in that, the middle part that the middle part of described the first sample stage back up pad (5) has through hole and/or the second sample stage back up pad (5 ') has through hole.
11. system according to claim 6, it is characterized in that, this system also comprises be used to first thermopair (20) of the hot-side temperature of measuring described plane thin film thermoelectric device (19) and is used for measuring the second thermopair (20 ') of the cold junction temperature of described plane thin film thermoelectric device (19).
12. system according to claim 11, it is characterized in that, described temperature control equipment is the first temperature controller (28) and the second temperature controller (29), described the first temperature controller (28) consists of backfeed loop with described the first thermopair (20) and described the first ceramic heating flake (15), and described the second temperature controller (29) consists of backfeed loop with described the second thermopair (20 ') and described the second ceramic heating flake (15 ').
13. system according to claim 11 is characterized in that, described temperature control equipment is computing machine (27); This system also comprises the first programmable power supply (34) and the second programmable power supply (35); Described computing machine (27) consists of backfeed loop with described the first thermopair (20), described the first ceramic heating flake (15) and the first programmable power supply (34); Described computing machine (27) also consists of backfeed loop with described the second thermopair (20 '), described the second ceramic heating flake (15 ') and the second programmable power supply (35); Described the first programmable power supply (34) is connected with the first ceramic heating flake (15), and described the second programmable power supply (35) is connected with the second ceramic heating flake (15 ').
CN 201220741003 2012-12-28 2012-12-28 System for measuring open-circuit voltage of planar thin-film thermoelectric device Expired - Fee Related CN203011995U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105606643A (en) * 2014-11-25 2016-05-25 国家纳米科学中心 Thermoelectric property measuring sample platform and thermoelectric property measuring apparatus
CN107290638A (en) * 2017-06-14 2017-10-24 复旦大学 A kind of Multifunction thermoelectric device test system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105606643A (en) * 2014-11-25 2016-05-25 国家纳米科学中心 Thermoelectric property measuring sample platform and thermoelectric property measuring apparatus
CN105606643B (en) * 2014-11-25 2018-12-14 国家纳米科学中心 A kind of thermoelectricity capability measurement sample stage and thermoelectricity capability measuring device
CN107290638A (en) * 2017-06-14 2017-10-24 复旦大学 A kind of Multifunction thermoelectric device test system

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