CN103728546B - The system of transistor life test acceleration and stabilization of operating point - Google Patents

The system of transistor life test acceleration and stabilization of operating point Download PDF

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Publication number
CN103728546B
CN103728546B CN201410016013.8A CN201410016013A CN103728546B CN 103728546 B CN103728546 B CN 103728546B CN 201410016013 A CN201410016013 A CN 201410016013A CN 103728546 B CN103728546 B CN 103728546B
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China
Prior art keywords
transistor
temperature
heating platform
power supply
control
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Expired - Fee Related
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CN201410016013.8A
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CN103728546A (en
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张小玲
谢雪松
刘榿
吕长志
李志国
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Beijing University of Technology
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Beijing University of Technology
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Abstract

The system of transistor life test acceleration and stabilization of operating point, belongs to the category of measuring technology and method. Include the heat hot cave (101) of mask placement device, heating platform (102), the mainframe box (106) of fixing heating platform (102) is connected to temperature regulator (107), temperature indicator (103), power supply is biased indicating meter (104), power supply offset controller (105), described 30 same shapes that have on heating platform (102) can place the heat hot cave (101) of B3 type packaged transistor. The present invention can realize being heated by the transistor of 30 same models and the function of stabilization of operating point simultaneously.

Description

The system of transistor life test acceleration and stabilization of operating point
Technical field:
The present invention is under the control of PC, it is achieved the working point of some bipolar transistors is carried out real-time control, makes the settings of stabilization of operating point at PC of transistor. Along with the inner parameter (��, BVceo etc.) of transistor and the change of external conditions (case temperature etc.), measuring apparatus is wanted real-time, is adjusted working point automatically so that it is level off to the set(ting)value of PC; Sound and light alarm is sent near working point and when deviation is greater than prescribed value when not being stable at. When abnomal condition occurs in transistor, implement to protect timely to transistor, avoid the damage of transistor to greatest extent.
Background technology:
In the military semiconducter device of the weaponrys such as space flight, aviation, boats and ships, weapons, the evaluation of new product qualification, the upgrading of old product and reliability growth engineering all needs the value of life-span and the failure rate providing semiconducter device quantitatively. The value of its life-span and failure rate will be used in priority project, the reliability prediction of weaponry, reliability design. But, existing longevity test (such as qualification test and the reception test etc.) test period is long, and cost height, efficiency is low. And to be solved the problem, need how sub-sample device is carried out longevity test simultaneously, the present invention can complete maximum 30 transistors and carry out real-time simultaneously, and automatic working point is monitored, it is possible to controlled by the outside temperature (room temperature is to 300 DEG C) of device according to customer need.
Summary of the invention:
The present invention mainly realize simultaneously to the monitor in real time of 30 B3 packaged transistor working points and this transistor is carried out intensification control.
The present invention specifically adopts following technical scheme:
The system of transistor life test acceleration and stabilization of operating point, includes the heat hot cave 101 of mask placement device, heating platform 102, the mainframe box 106 of fixing heating platform 102 is connected to temperature regulator 107, temperature indicator 103, power supply is biased indicating meter 104, power supply offset controller 105; Pc machine 108 is connected realization to the temperature of transistor and the control of working point with the power supply offset controller 105 in mainframe box 106 with temperature regulator 107 by communication terminal; It is characterized in that: have 30 same shapes can place the heat hot cave 101 of B3 type packaged transistor on heating platform 102; three pins of every transistor of described packaged transistor are connected with protection circuit; being placed on the protection circuit of 6 described transistors on same circuit card and circuit card is fixed on the top of heating platform, is connected to the connection terminal on circuit card on the power supply offset controller 105 in main frame casing 106. Temperature regulator 107 in mainframe box 106 realizes the control to device temperature by being connected with the heating unit and thermocouple of heating platform 102; Pc machine 108 sets the working point electric current and voltage value of working temperature and temperature rise rate and device, by communications protocol by working point electric current and voltage value transmit to the temperature regulator 107 of mainframe box 106 and power supply offset controller 105; Transistor in heating platform 102 is carried out computer heating control according to the temperature value obtained by temperature regulator 107, the signal obtained by the thermocouple arranged at heating platform 102 is converted to temperature value through temperature regulator 107, and is displayed on the display screen of temperature indicator 103; The working point of transistor is carried out real-time control according to the current and voltage signals obtained by power supply offset controller 105, its controlling valu is displayed in the biased indicating meter 104 of power supply, when there is deviation in the working point of transistor, the information that problem transistor occurs is passed on pc machine 108 by PORT COM by power supply bias device 104, reminds user that this device is taked corresponding measure.
The metal slab in the heat hot cave (101) of the transistor that heating platform 102 places 30 B3 type encapsulation for being provided with simultaneously, described metal slab length, width and height are respectively 230mm, 200mm and 60mm; Described heating platform 102 is made up of upper and lower double layer of metal plate, has heat storage capacity, and upper strata metal sheet is provided with the heat hot cave 101 that 30 same shapes can place B3 type packaged transistor; The silicon controlled rectifier that lower metal plate power is 1000 2000W drives hot rod to heat, and has been used for the temperature control of the constant temperature of heating platform 102 or temperature rise rate; 30 heat hot caves 101 are arranged on the central part of heating platform 102, and the surrounding of heating platform 102 leaves 50��60mm heating platform width, to prevent edge heat radiation bring uneven; Upper and lower double layer of metal plate is respectively 30mm.
All adopt the CPU of a slice independence to control every only tested packaged transistor, adopt A/D, D/A transmodulator of 12 high precision simultaneously, to ensure real-time and the precision of control; Base loop at tested transistor adopts MOSFETIRF540 at a high speed as the power element of protection, and the execution time is 50ns; Simultaneously collector loop at tested transistor is also provided with the protection circuit formed with high pressure, high-power MOSFET IRF540, and in order to complete voltage up to 100V, electric current switches up to the break-make of the circuit of 1A, and the execution time is 200ns.
In measurement, the measurement of 30 transistors carries out along separate routes control, and it is completed by the interface module of PC 108, and the address in interface module is strobed into, by currently testing, the tested packaged transistor specified with control signal latch; Data snubber is used for storing each parameter of current tested device, and waits in interface module that microcontroller upload the data to pc machine 108 after sending instructions and process.
Not monitoring device for this demand in existing market, this invention is for realizing this goal and complete.
Accompanying drawing explanation
Fig. 1: the one-piece construction schematic diagram of the present invention;
Fig. 2: the transistor of the present invention is anti-from excitation circuit;
Fig. 3: the system architecture schematic diagram of the measuring system of the present invention;
Fig. 4: the preposition measurement modular structure schematic diagram of the present invention;
Fig. 5: the PC interface module structural representation of the present invention;
Fig. 6: the PC data configuration of the present invention and processing module schematic diagram;
In figure: 101, heat hot cave, 102, heating platform, 103, temperature indicator, 104, the biased indicating meter of power supply, 105, power supply offset controller, 106, mainframe box, 107, temperature regulator, 108, pc machine.
Embodiment
The specific embodiment of the present invention is as follows, and B3 transistor npn npn is adopted common emitter connection, and common emitter connection can prevent device from damaging because of electric current overload effectively, and Fig. 2 is the protection circuit of every transistor. Owing to protection circuit must be just effective near device; in addition according to the position distribution in the heat hot cave 101 of heating platform 102; each circuit card can connect 6 devices with protection circuit; and such 5 circuit cards are separately fixed at the top of heating platform; and the pipe cap of transistor is placed upside down in heat hot cave 101; add painting thermal grease conduction, form the type of heating of a hot plate. Heating platform 102 is one to be had length, width and height and is respectively 230mm, the metal slab of 200mm and 60mm, forms by upper and lower two layers, has heat storage capacity. In fact heating platform 102 is the well heater of a hot plate form. Hot plate upper strata is the heat hot cave 101 that 30 same shapes can place B3 type packaged transistor; The hot plate lower floor silicon controlled rectifier of 1000 2000W drives hot rod to heat, it is possible to complete the constant temperature of thermal station or the temperature control of temperature rise rate. The temperature of hot plate measures at heating platform 102 center with thermocouple. Temperature regulator 107 adopt the Ministry of Aerospace Industry 502 64 sections of temperature control systems merge in the present invention, temperature indicator 103 panel adopts digital display, and control adopts touch operation.
First being calibrated by heating platform 102 before measuring, the present invention's electric method calibrates heating platform 102 and the temperature in each heat hot cave 101. We utilize the temperature profile that transistor P-N junction forward voltage changes with temperature linearity, model produced in USA is adopted to be the warm case of DESPATCH-900, temperature-controlled precision is �� 0.1 DEG C, thermostat container is put into normal thermometer (error of normal thermometer is �� 0.1 DEG C) and a sample pipe, tying at EB adds just to small area analysis 100 �� A, at different temperatures, record the millivolt value that EB ties pressure drop, the temperature and EB that obtain one group of normal thermometer display are tied the corresponding data of pressure drop, makes temperature��millivolt graphic representation. Control heating platform 102 is warming up to a certain temperature, and each hot cave put into by the sample pipe that this is demarcated, and utilizes temperature��millivolt graphic representation that this sample pipe is made, the temperature distribution in heat hot cave 101 can be obtained, the temperature simultaneously measured with thermocouple, does a difference record, carries out temperature adjustmemt. In reality is tested, we utilize the temperature of this curved measurement device. Owing to the warm case demarcated and normal thermometer precision are all at �� 0.1 DEG C, can ensure within �� 1 DEG C through demarcating like this error of post-heating hot cave 101 temperature. In order to ensure the temperature homogeneity of 30 pipes, take four main measures: (1) .30 hot cave concentrates on the central part of heating platform, and surrounding leaves 50��60mm heating platform width, to prevent the ununiformity that edge dispels the heat and brings. (2). being made heating platform thickness as far as possible thick in addition, it is thick that the zone of heating up and down of our design is respectively 30mm, (60mm is thick altogether). (3). reduce the total area in the hot cave of the Distance geometry between hot cave and hot cave as far as possible. (4). avoid environment to the interference of heating platform homo(io)thermism, as: prevent gas flowing to the interference etc. of heating platform homo(io)thermism. We go, with the sample pipe demarcated, the temperature measuring each hot cave, can accomplish that the plastisied dispersion of each hot cave temperature is within �� 1.5 DEG C.
2 points are mainly considered in the design of energy supply control module 105: (1) to precision and the real-time performance of Operating point control. (2) to the property improved of tested transistor protection.
For above-mentioned 2 points, take following measure in the design: the (1) corresponding tested transistor of each preposition measurement module, as shown in Figure 3, the structure iron of preposition measurement module is as shown in Figure 4, every only tested transistor is all controlled with the CPU of a slice independence, the working point that user is arranged by microcontroller STM32F103 provides a suitable received current to the base stage of tested transistor by the D/A transmodulator AD7521 of 12 high precision and 15V direct supply, tested device connects pre-amplification module (realization of OP07 amplifier), division module (electric resistance partial pressure 100:5) and IV change module (0.1 �� resistance sampling, OP07 amplifies) can realize VBE, the test of VCE and IE tri-parameters is also switched by multi-way switch, and test result is converted to digital quantity by the A/D converter of 12 high precision, read by microcontroller, compared in the working point of the quantity of state read and user's setting by microcontroller, if drifted about, then produce new base current control signal by respective algorithms and tested device regulated and controled the real-time and the precision that ensure control. (2) base loop at tested transistor adopts MOSFET(IRF540 at a high speed) as the power element protected, the execution time is about 50ns, simultaneously collector loop at tested transistor is also designed with the protection circuit formed with high pressure, high-power MOSFET (IRF540), it is possible to completing the break-make switching of high-voltage (100V), big current (1A), the execution time is about 200ns.
Finally, accurate in order to ensure the data of 30 transistors in measurement, need to carry out control along separate routes, this is completed by PC interface module, as shown in Figure 5, microcontroller adopts STM32F103 to drive address and control latch and data snubber, and wherein the effect of address and control signal latch 74LS245 is exactly that currently test is strobed into the tested device specified; Data snubber is used for storing each parameter of current tested device, and waits that uploading the data to pc machine after microcontroller sends instructions processes. In order to read integrity, Fig. 6 gives the module map of pc machine data configuration with process.

Claims (3)

1. the system of transistor life test acceleration and stabilization of operating point, include the heat hot cave (101) of mask placement device, heating platform (102), the mainframe box (106) of fixing heating platform (102) is connected to temperature regulator (107), temperature indicator (103), power supply is biased indicating meter (104), power supply offset controller (105); Pc machine (108) is connected realization to the temperature of transistor and the control of working point with the power supply offset controller (105) in mainframe box (106) with temperature regulator (107) by communication terminal; It is characterized in that: have 30 same shapes can place the heat hot cave (101) of B3 type packaged transistor on heating platform (102), three pins of every transistor of described packaged transistor are connected with protection circuit, the protection circuit of 6 described transistors is placed on same circuit card and circuit card is fixed on the top of heating platform, the connection terminal on circuit card is connected on the power supply offset controller (105) in mainframe box (106); Temperature regulator (107) in mainframe box (106) realizes the control to device temperature by being connected with the heating unit and thermocouple of heating platform (102); The working point electric current and voltage value of pc machine (108) upper setting working temperature and temperature rise rate and device, by communications protocol by working point electric current and voltage value transmit to the temperature regulator (107) of mainframe box (106) and power supply offset controller (105); Transistor in heating platform (102) is carried out computer heating control according to the temperature value obtained by temperature regulator (107), the signal obtained by the thermocouple arranged at heating platform (102) is converted to temperature value through temperature regulator (107), and is displayed on the display screen of temperature indicator (103); The working point of transistor is carried out real-time control according to the current and voltage signals obtained by power supply offset controller (105), its controlling valu is displayed in the biased indicating meter (104) of power supply, when there is deviation in the working point of transistor, power supply is biased indicating meter (104) and passes on pc machine (108) by the information that problem transistor occurs by PORT COM, reminds user that this device is taked corresponding measure; The metal slab in the heat hot cave (101) of the transistor that heating platform (102) places 30 B3 type encapsulation for being provided with simultaneously, described metal slab length, width and height are respectively 230mm, 200mm and 60mm; Described heating platform (102) is made up of upper and lower double layer of metal plate, has heat storage capacity, and upper strata metal sheet is provided with the heat hot cave (101) that 30 same shapes can place B3 type packaged transistor; The silicon controlled rectifier that lower metal plate power is 1000 2000W drives hot rod to heat, and has been used for the temperature control of the constant temperature of heating platform (102) or temperature rise rate; 30 heat hot caves (101) are arranged on the central part of heating platform (102), and the surrounding of heating platform (102) leaves 50��60mm heating platform width, to prevent edge heat radiation bring uneven; Upper and lower double layer of metal plate is respectively 30mm.
2. the system of transistor life test acceleration according to claim 1 and stabilization of operating point, it is characterized in that: all adopt the CPU of a slice independence to control every only tested packaged transistor, adopt A/D, D/A transmodulator of 12 high precision, to ensure real-time and the precision of control simultaneously; Base loop at tested transistor adopts MOSFETIRF540 at a high speed as the power element of protection, and the execution time is 50ns; Simultaneously collector loop at tested transistor is also provided with the protection circuit formed with high pressure, high-power MOSFET IRF540, and in order to complete voltage up to 100V, electric current switches up to the break-make of the circuit of 1A, and the execution time is 200ns.
3. the system of transistor life test acceleration according to claim 1 and stabilization of operating point, it is characterized in that: in measurement, the measurement of 30 transistors carries out control along separate routes, it is completed by the interface module of PC (108), and currently test is strobed into the tested packaged transistor specified by address and control signal latch in interface module; Data snubber is used for storing each parameter of current tested device, and waits in interface module that microcontroller upload the data to pc machine (108) after sending instructions and process.
CN201410016013.8A 2014-01-14 2014-01-14 The system of transistor life test acceleration and stabilization of operating point Expired - Fee Related CN103728546B (en)

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CN104655955B (en) * 2014-08-01 2017-02-15 江苏大学 Method and experimental device for predicting service life of bus joint
CN104316857A (en) * 2014-10-31 2015-01-28 北京工业大学 IGBT thermal fatigue test system
CN108594101A (en) * 2018-04-02 2018-09-28 重庆大学 A kind of SiC Mosfet reliabilities and high temperature aging test device
CN110809339B (en) * 2020-01-08 2020-05-08 四川立泰电子有限公司 Heating device and heating control system for testing high-temperature parameters of power device

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