CN203007413U

CN203007413U - Graphite frame grab for silicon chip coating

Info

Publication number: CN203007413U
Application number: CN201220644325XU
Authority: CN
Inventors: 刘粉霞
Original assignee: LIGHTWAY GREEN NEW ENEGY CO Ltd
Current assignee: Baoding Lightway Green Energy Technology Co ltd
Priority date: 2012-11-30
Filing date: 2012-11-30
Publication date: 2013-06-19
Anticipated expiration: 2022-11-30

Abstract

The utility model discloses a graphite frame grab for silicon chip coating, comprising a cross support, wherein a connecting fastener clamped to the lattice bar of the graphite frame is arranged at the upper end of the cross support, while two supports inclined outwards are arranged at the lower end of the cross support; and the upper end faces of the two supports are rough surfaces. When in use, the silicon chip is just supported on the silicon chip supports of the graphite frame grab on the two ends, but the disc face of the bottom surface of the silicon chip is not in contact with the silicon chip supports; therefore, coating of the silicon chip is not affected; the coating area of the silicon chip is large and the uniformity of coating is good, and the anti-reflection and passivation area of a solar cell produced by Roth and Rau PECVD (Plasma Enhanced Chemical Vapor Deposition) coating equipment is increased; therefore, the conversion efficiency of the solar cell is improved. The graphite frame grab for silicon chip coating is more reliable in supporting the silicon chips so that the silicon chips are not easy to slip; and the rate of broken chips and the rate of hidden-crack chips of the PECVD coating equipment are reduced.

Description

A kind of silicon chip film-coated graphite frame grab of using

Technical field

The utility model relates to a kind of silicon chip film-coated graphite frame grab of using.

Background technology

Present Roth﹠amp; Under Rau PECVD, filming equipment uses comparatively extensive in the manufacture of solar cells industry.Make the square silicon wafer of solar battery sheet before plated film, be placed in the graphite frame square hole, and supported by the grab that is fixed on the glazing bar of square hole both sides.Because existing grab adopts semicircle single-point support structure or a few font single-point support support structure silicon chip, make silicon chip can not form plated film at this fulcrum place, the plated film that forms around this fulcrum is thinner, make silicon chip film-coated inhomogeneous, affect the coating effects of silicon chip, reduced the efficiency of conversion of the solar cell that this silicon chip makes.And single-point contact cause the fragmentation rate of filming equipment under PECVD and hidden sliver rate higher.

The utility model content

The purpose of this utility model solves the above-mentioned problems in the prior art exactly, and a kind of silicon chip film-coated graphite frame grab of using is provided, and the position of this grab supporting silicon chip is not on the card of silicon chip bottom surface, and it is high to support reliability, and silicon chip is difficult for landing.

For achieving the above object, technical solution of the present utility model is: a kind of silicon chip film-coated graphite frame grab of using, and it comprises horizontal support; In the horizontal support upper end, the Connection Card that is connected on the graphite frame glazing bar is arranged, there are two outward-dipping bracing frames the lower end, and two bracing frame upper surfaces are uneven surface.

Two bracing frames described above and the slanted angle of vertical direction are 20～70 °.

Two bracing frame length described above are 0.8～5mm.

The uneven surface of two bracing frame upper surfaces described above is the uneven surface that forms of arc-shaped protrusions one by one, and the diameter of arc-shaped protrusions is 0.05-0.3mm, and radian is 30-180 °.

The utility model is designed to tilting with the silicon chip bracing frame of graphite frame grab, like this silicon chip be two end supports on the silicon chip bracing frame, no longer contact the silicon chip bracing frame on the card of its bottom surface, so do not affect the plated film of silicon chip, the plated film area of silicon chip is large, good uniformity, has increased Roth﹠amp; Antireflective and the passivation area of the solar cell that under Rau PECVD, filming equipment is produced, thus the efficiency of conversion of raising solar cell also makes the outward appearance of solar battery sheet more attractive in appearance.Due to the design of the uneven surface on two bracing frames, make the utility model supporting silicon chip more reliable, silicon chip is difficult for landing; And bracing frame is no longer that single-point contacts with silicon chip, but the contact of whole outside has reduced fragmentation rate and the hidden sliver rate of filming equipment under PECVD.

Description of drawings

Fig. 1 is structural representation of the present utility model;

Fig. 2 is the I section enlarged view of Fig. 1;

Fig. 3 is the Installation Example of the utility model on graphite frame.

Embodiment

Below in conjunction with the drawings and specific embodiments, the utility model is described further.

As depicted in figs. 1 and 2, the present embodiment comprises horizontal support 1.In horizontal support 1 upper end, the Connection Card 4 that is connected on the graphite frame glazing bar is arranged, there are two outward-dipping bracing frames 2 lower end.Two bracing frame 2 length are 0.8～5mm, with the slanted angle α of vertical direction be 20～70 °.Two bracing frame 2 upper surfaces are the uneven surface that forms of arc-shaped protrusions 3 one by one, and the diameter R of arc-shaped protrusions 3 is 0.05-0.3mm, and radian measure beta is 30-180 °.

As shown in Figure 3, during use, the Connection Card of the utility model 5 is connected on the graphite frame glazing bar, its two bracing frame 2 lays respectively in adjacent two graphite frame square holes 6,7.Be fixed with respectively two the utility model 5 on two opposite side glazing bars of each graphite frame square hole, every two bracing frames 2 of the present utility model are relative, support together the silicon chip 8 that is placed in this graphite frame square hole.

Claims

1. silicon chip film-coated graphite frame grab of using, it is characterized in that: it comprises horizontal support; In the horizontal support upper end, the Connection Card that is connected on the graphite frame glazing bar is arranged, there are two outward-dipping bracing frames the lower end, and two bracing frame upper surfaces are uneven surface.

2. the silicon chip film-coated graphite frame grab of using according to claim 1, it is characterized in that: the slanted angle of described two bracing frames and vertical direction is 20～70 °.

3. according to claim 1 or the 2 described silicon chip film-coated graphite frame grabs of using, it is characterized in that: described two bracing frame length are 0.8～5mm.

4. the silicon chip film-coated graphite frame grab of using according to claim 3 is characterized in that: the uneven surface that the uneven surface of described two bracing frame upper surfaces forms for arc-shaped protrusions one by one, and the diameter of arc-shaped protrusions is 0.05-0.3mm, radian is 30-180 °.

5. according to claim 1 or the 2 described silicon chip film-coated graphite frame grabs of using, it is characterized in that: the uneven surface that the uneven surface of described two bracing frame upper surfaces forms for arc-shaped protrusions one by one, the diameter of arc-shaped protrusions is 0.05-0.3mm, radian is 30-180 °.