CN202977440U - p type semiconductor used by amorphous silicon cell - Google Patents

p type semiconductor used by amorphous silicon cell Download PDF

Info

Publication number
CN202977440U
CN202977440U CN 201220659583 CN201220659583U CN202977440U CN 202977440 U CN202977440 U CN 202977440U CN 201220659583 CN201220659583 CN 201220659583 CN 201220659583 U CN201220659583 U CN 201220659583U CN 202977440 U CN202977440 U CN 202977440U
Authority
CN
China
Prior art keywords
layer
film
knot
amorphous silicon
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220659583
Other languages
Chinese (zh)
Inventor
高平奇
孔英
王宽冒
黄艳红
云骁健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAODING FENGFAN SOLAR ENERGY Co Ltd
Original Assignee
BAODING FENGFAN SOLAR ENERGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAODING FENGFAN SOLAR ENERGY Co Ltd filed Critical BAODING FENGFAN SOLAR ENERGY Co Ltd
Priority to CN 201220659583 priority Critical patent/CN202977440U/en
Application granted granted Critical
Publication of CN202977440U publication Critical patent/CN202977440U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The utility model discloses a p type semiconductor used by an amorphous silicon cell. The p type semiconductor comprises a p+ layer semiconductor film and a p- layer semiconductor film, wherein the p+ layer semiconductor film and the p- layer semiconductor film are both amorphous silicon carbide a-SiC:H films, dark conduction of the p+ layer semiconductor film is from 1*10[-5]S/cm to 5*10[-5]S/cm, band gap is 1.8 to 1.9eV, thickness is 40 to 80angstrom, dark conduction of the p- layer semiconductor film is from 1*10[-7]S/cm to 5*10[-7]S/cm, band gap is 2 to 2.1eV, thickness is 30 to 100angstrom. The p type semiconductor can not only enable more useful light to pass and enter an intrinsic absorbed i layer, but also the p type semiconductor can perfectly contact with a front electrode or a front cell to improve cavity leading-out efficiency to the greatest degree and realizes improvement from two aspects of solar spectrum utilization efficiency and carrier collection efficiency to improve energy conversion efficiency of a photovoltaic cell which is prepared by the p type semiconductor.

Description

The p-type semiconductor that a kind of amorphous silicon battery uses
Technical field
The utility model relates to the p-type semiconductor that a kind of amorphous silicon battery uses.
Background technology
But thin-film solar cells is representing the development trend of photovoltaic power generation technology with its low energy consumption, conversion efficiency that the low cost large tracts of land is integrated and higher.Silicon-based film solar cells occupies the maximum capture of film photovoltaic cell at present, generally adopts PECVD (plasma enhanced chemical vapor deposition) equipment, uses the source gas generation that contains silane to form.The unijunction silicon-base thin-film battery is usually expressed as the p-i-n structure, the silicon thin film of boron-doping (p layer) is as window region, unadulterated intrinsic silicon film (i floor) is as the light absorption district, the silicon thin film (n layer) of mixing phosphorus is used for forming internal electric field, and adopting transparent conductive oxide film as front electrode, metallic film is as back electrode.
Three layers of p-i-n are commonly referred to a photovoltaic cells, or one " knot ", and unijunction solar cell contains single photovoltaic cells.The structure of the unijunction non-crystal silicon solar cell for preparing on glass substrate is generally: glass/transparent conductive oxide film/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metallic film, wherein p-type a-SiC:H and N-shaped a-Si:H set up an internal electric field at i layer a-Si:H two ends, incident light sees through p-type a-SiC:H amorphous silicon layer and enters the i layer and produce therein electronics and hole pair, electronics and hole be to being collected by external circuit after electric field separates, thereby transform light energy is become electric energy.Because amorphous silicon has relatively wide band gap (1.8 eV～2 eV), determined that this material responds without absorbing the incident photon of energy less than 1.8 eV, cause its spectrum utilization ratio not high, the solar spectrum response range of amorphous silicon is 300nm～700nm.Microcrystalline silicon film is comprised of the silicon crystal grain of crystallite dimension less than tens nanometers, and grain boundary is amorphous phase, and it has the advantage of amorphous silicon and crystalline silicon simultaneously, and by controlling preparation technology, its optical energy band gap even can reach 1.1 eV.With respect to amorphous silicon, the hull cell of being made by microcrystal silicon has long-wave band response preferably, and effectively the spectral absorption long wave limit can extend to 1100 nm.In order to improve the photoelectric conversion efficiency of thin-film solar cells, the amorphous silicon/microcrystalline silicon tandem solar cell that utilizes amorphous silicon and microcrystal silicon respectively the shortwave of solar spectrum and the high characteristics design of long-wave response to be obtained is the study hotspot of efficient silicon-base thin-film battery in the world at present.Have benefited from the research work that is conceived to the photoelectric conversion efficiency lifting a large amount of in worldwide, the laboratory efficient that the silica-base film photovoltaic cell is the highest instantly surpasses 13%.From industrial quarters, amorphous silicon a-Si:H film photovoltaic cell is gone into operation in worldwide recent years in a large number.Cast aside the achievement that has obtained and do not talk, at present also require further study the conversion efficiency of improving product for the amorphous silicon film battery field.Research emphasis comprises and reduces as much as possible photo attenuation, light confinement management, band gap modulation engineering and interface processing and p layer improvement in performance etc.
The p layer is folded between the front electrode of TCO and Intrinsic Gettering layer (i layer), plays the effect of setting up Built-in potential in silicon-base thin-film battery, and it also allows incident light to pass as an optical window layer simultaneously.Desirable says, the p layer allows all useful light to enter Intrinsic Gettering layer (i layer) by it, and the p layer also must form the derivation efficient that perfect electricity contacts to promote to greatest extent the hole with front electrode simultaneously.Typical p layer need to reduce light absorption by various ways, for example usually widens band gap or reduces light absorption by preparing polycrystalline or microstructure by doping carbon (C) unit.Boron (B) element as a kind of typical p-type doped source, can be incorporated in the reaction cavity of PECVD equipment by trimethyl borine TMB source gas and participate in chemical reaction.The incorporation of B element plays a decisive role to the electric property of p layer silica-base film, in case and the B element through diffusing into the i layer, can cause the fatal decline of film photovoltaic cell performance.In addition, can not or cause its decomposition to front electrode transparent conductive oxide film injury in the process of deposition p layer.Exactly because these exacting terms requirements, we carry out extensive and deep research at the effect in hull cell of having to the p layer.The contact interface feature of the contact interface of front electrode and p layer and p layer and i layer has determined the performance of battery to a certain extent.Current, the way of front electrode and p layer and p layer and i bed boundary optimization can be summarized as following two kinds: 1) increase by a buffering transition rete between p and i layer, for example, intrinsic carborundum (SiC:H) rete, because they are different from band structure between amorphous silicon, can form higher conduction band mismatch, the electronics that is conducive to the drift of subtend p layer carries out scattering, does not affect the collection efficiency in hole simultaneously; 2) the silica-based rete of heavily doped p-type is used as contact layer, is folded between front electrode and p layer, can reduce the contact berrier with front electrode layer.The first way usually can be brought larger photo attenuation, and first scheme can strengthen the additional absorbent of incident light in Window layer.
The utility model content
The purpose of this utility model is to provide the p-type semiconductor that a kind of amorphous silicon battery uses, this p-type semiconductor can allow how useful light to enter Intrinsic Gettering layer i layer by it, simultaneously can with front electrode or the perfect derivation efficient that contact to promote to greatest extent the hole of last junction battery, promote to improve the energy conversion efficiency of the photovoltaic cell that is prepared by this p-type semiconductor from solar spectrum utilization ratio and carrier collection efficient two aspects.
For realizing the utility model above-mentioned purpose, technical solution of the present utility model is: the p-type semiconductor that a kind of amorphous silicon battery uses, it is made of p+ layer semiconductive thin film and p-layer semiconductive thin film, p+ layer semiconductive thin film and p-layer semiconductive thin film are noncrystalline silicon carbide a-SiC:H film, and the dark conductance of p+ layer semiconductive thin film is 1 * 10 -5～5 * 10 -5S/cm, band gap are 1.8～1.9 eV, and thickness is 40～80; The dark conductance of p-layer semiconductive thin film is 1 * 10 -7～5 * 10 -7S/cm, band gap are 2～2.1 eV, and thickness is 30～100.
One of semi-conductive preparation method of p-type described above is: it comprises the following steps: be attached with the deposition chambers that the insulated substrate of transparent conductive film enters PECVD equipment, gas pressure in deposition chambers is controlled at 10～1000 mTorr, depositing temperature is 150 ° of C～220 ° C, and the energy density of plasma that is applied on battery lead plate is 5mW/cm 2～40mW/cm 2
(1) the deposition chamber of PECVD equipment at first the inflatable body flow-rate ratio be 1:(0.5 ~ 1): silane SiH 4:(1 ~ 2) 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 15 ~ 60 s;
(2) the deposition chamber of PECVD equipment again the inflatable body flow-rate ratio be 1:(2 ~ 4): silane SiH 4:(0.2 ~ 0.6) 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 15 ~ 60 s.
The semi-conductive preparation method's of p-type described above two is: it comprises the following steps: the deposition chambers that the amorphous silicon film battery semi-finished product after the first knot deposition is completed enter PECVD equipment, gas pressure in deposition chambers is controlled at 10～1000 mTorr, depositing temperature is 150 ° of C～220 ° C, and the energy density of plasma that is applied on battery lead plate is 5mW/cm 2～40mW/cm 2
(1) the deposition chamber of PECVD equipment at first the inflatable body flow-rate ratio be 1:(0.5 ~ 1): silane SiH 3:(2 ~ 3) 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 20 ~ 30 s;
(2) the deposition chamber of PECVD equipment again the inflatable body flow-rate ratio be 1:(1 ~ 2): silane SiH 3:(0.4 ~ 0.8) 4Methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 30 ~ 40s.
Beneficial effect
The p-type semiconductor that the utility model provides, p+ layer semiconductive thin film directly contact with front electrode or last junction battery has higher dark conductance, and p-layer semiconductive thin film contacts with i layer Intrinsic Gettering layer has wider band gap; Can allow how useful light to enter i layer Intrinsic Gettering layer by it, simultaneously can with front electrode or the perfect derivation efficient that contact to promote to greatest extent the hole of last junction battery, promote to improve the energy conversion efficiency of the photovoltaic cell of its preparation from solar spectrum utilization ratio and carrier collection efficient two aspects.Optimization by bilayer thickness can realize electrical property loss and optical absorption loss balance.The short circuit current that the fill factor, curve factor that brings by the p+ rete increases and the p-rete brings and the increase of open circuit voltage, battery conversion efficiency can be highly improved.This p-type semiconductor can be directly used in each sub-battery of unijunction, binode, multi-knot thin film photovoltaic cell, has higher application value.
In the situation that in keeping double junction non-crystal silicon/amorphous silicon film photovoltaic battery structure, the preparation parameter of other layer is identical, we contrast the electrical properties that uses the conventional semiconductor structure of single p layer a-SiC:H and above-mentioned p-type semiconductor (p+/p-)-prepared battery of a-SiC:H composite semiconductor structure respectively.Found that and use the binode battery initial cells efficient of p-type semiconductor (p+/p-)-a-SiC:H composite semiconductor structure can reach 8.5%, photo attenuation is tanned by the sun three months image data lower than 7%(is outdoor), and this two item number of binode battery that uses the conventional semiconductor structure of single p layer is according to being respectively 7.3% and 8%.The conversion efficiency that is to say the thin-film solar cells of using p-type semiconductor fabrication of the present utility model can be highly improved, and photo attenuation obtains larger reduction.
Description of drawings
Fig. 1 is the structural representation of amorphous silicon a-Si:H thin-film solar cells that uses the unijunction structure of the utility model p-type semiconductor preparation;
Fig. 2 is the structural representation of amorphous silicon a-Si:H/a-Si:H thin-film solar cells that uses the double junction structure of the utility model p-type semiconductor preparation;
Fig. 3 is the structural representation of the amorphous silicon that uses the double junction structure of the utility model p-type semiconductor preparation/microcrystal silicon a-Si:H/ μ-Si:H thin-film solar cells;
Fig. 4 is the structural representation of amorphous silicon/microcrystal silicon of using three junction structures of the utility model p-type semiconductor preparation/microcrystal silicon a-Si:H/ μ-Si:H/ μ-Si:H thin-film solar cells.
Embodiment
The amorphous silicon a-Si:H thin-film solar cells of unijunction structure as shown in Figure 1, with front transparent insulation substrate 11 as light incident side, from light incident side, lamination has front electrode successively: transparent conductive film 13, p+ layer noncrystalline silicon carbide a-SiC:H film 101, p-layer noncrystalline silicon carbide a-SiC:H film 102, i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, n layer amorphous silicon a-Si:H film 104, the first dorsum electrode layer 15, the second dorsum electrode layer 17, encapsulant layer 19 and back of the body transparent insulation plate 21.
the amorphous silicon a-Si:H/a-Si:H thin-film solar cells of double junction structure as shown in Figure 2, with front transparent insulation substrate 11 as light incident side, from light incident side, lamination has front electrode successively: transparent conductive film 13, the first knot p+ layer noncrystalline silicon carbide a-SiC:H film 101, the first knot p-layer noncrystalline silicon carbide a-SiC:H film 102, the first knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, the first knot n layer amorphous silicon a-Si:H film 104, the second knot p+ layer noncrystalline silicon carbide a-SiC:H film 105, the second knot p-layer noncrystalline silicon carbide a-SiC:H film 106, the second knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 107, the second knot n layer amorphous silicon a-Si:H film 108, the first dorsum electrode layer 15, the second dorsum electrode layer 17, encapsulant layer 19 and back of the body transparent insulation plate 21.
the amorphous silicon of double junction structure as shown in Figure 3/microcrystal silicon a-Si:H/ μ-Si:H thin-film solar cells, with front transparent insulation substrate 11 as light incident side, from light incident side, lamination has front electrode successively: transparent conductive film 13, the first knot p+ layer noncrystalline silicon carbide a-SiC:H film 101, the first knot p-layer noncrystalline silicon carbide a-SiC:H film 102, the first knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, first knot n layer microcrystal silicon μ-Si:H film 104 ', second knot p+ layer microcrystal silicon μ-Si:H film 105 ', second knot p-layer microcrystal silicon μ-Si:H film 106 ', second knot i layer microcrystal silicon μ-Si:H Intrinsic Gettering layer 107 ', second knot n layer microcrystal silicon μ-Si:H film 108 ', the first dorsum electrode layer 15, the second dorsum electrode layer 17, encapsulant layer 19 and back of the body transparent insulation plate 21.
the amorphous silicon a-Si:H/ μ of three junction structures as shown in Figure 4-Si:H/ μ-Si:H thin-film solar cells, with front transparent insulation substrate 11 as light incident side, from light incident side, lamination has front electrode successively: transparent conductive film 13, the first knot p+ layer noncrystalline silicon carbide a-SiC:H films 101, the first knot p-layer noncrystalline silicon carbide a-SiC:H film 102, the first knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, first knot n layer microcrystal silicon μ-Si:H film 104 ', second knot p+ layer microcrystal silicon μ-Si:H film 105 ', second knot p-layer microcrystal silicon μ-Si:H film 106 ', second knot i layer microcrystal silicon μ-Si:H Intrinsic Gettering layer 107 ', second knot n layer microcrystal silicon μ-Si:H film 108 ', the 3rd knot p+ layer microcrystal silicon μ-Si:H film 105 ', the 3rd knot p-layer microcrystal silicon μ-Si:H film 106 ', the 3rd knot i layer microcrystal silicon μ-Si:H Intrinsic Gettering layer 107 ', the 3rd knot n layer microcrystal silicon μ-Si:H film 108 ', the first dorsum electrode layer 15, the second dorsum electrode layer 17, encapsulant layer 19 and back of the body transparent insulation plate 21.
The silicon-based film solar cells of the multijunction structures such as four knots, five knots is as long as continue one of stack, two or more unijunctions unit below the 3rd statement of account unit.
Front transparent insulation substrate 11 in Fig. 1, Fig. 2, Fig. 3 and Fig. 4 can be used for example glass substrate, and plastic base etc. have the material of high light transmittance at least at visible light wave range.Electrode before forming on transparent insulation substrate 11: transparent conductive film 13.Transparent conductive film 13 can use a kind of or combination in the transparent conductive oxides (TCO) such as tin oxide (SnO2), zinc oxide (ZnO), indium tin oxide (ITO).The thickness of transparent conductive film 13 preferably more than 500nm to the scope below 4000nm.In addition, the surface of transparent conductive film 13 need to be carried out the making herbs into wool processing and be formed rough light trapping structure.
Adopt the way of laser scribing to make transparent conductive film 13 be patterned as strip so that the later stage with a plurality of units in series connect and compose thin-film solar cell of tandem type.For example, using wavelength is that 1064nm, energy density are 14J/cm 3, pulse frequency is the YAG ray of 1kHZ, nesa coating 13 can be patterned as strip.
On transparent conductive film 13, stack gradually 101 layers of p+ layer noncrystalline silicon carbide a-SiC:H films, 102 layers of p-layer noncrystalline silicon carbide a-SiC:H films, i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, n layer amorphous silicon a-Si:H film 104 and form the a-Si:H unit.The a-Si:H unit can by under the way of plasma activated chemical vapour deposition by to mist ionization carry out film forming.Wherein i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103 and n layer amorphous silicon a-Si:H film 104 adopt common structure, adopt the commonsense method preparation.And the dark conductance of p+ layer noncrystalline silicon carbide a-SiC:H film is 1 * 10 -5S/cm, 1.5 * 10 -5S/cm, 2 * 10 -5S/cm, 2.5 * 10 -5S/cm, 3 * 10 -5S/cm, 3.5 * 10 -5S/cm, 4 * 10 -5S/cm, 4.5 * 10 -5S/cm or 5 * 10 -5S/cm, band gap are 1.8eV, 1.82eV, 1.84eV, 1.86eV, 1.88eV, 1.85eV, 1.83eV, 1.87eV or 1.9 eV, and thickness is 40,45,50,55,60,65,70,75 or 80; The dark conductance of p-layer noncrystalline silicon carbide a-SiC:H film is 1 * 10 -7S/cm, 1.5 * 10 -7S/cm, 2 * 10 -7S/cm, 2.5 * 10 -7S/cm, 3 * 10 -7S/cm, 3.5 * 10 -7S/cm, 4 * 10 -7S/cm, 4.5 * 10 -7S/cm or 5 * 10 -7S/cm, band gap are 2eV, 2.02eV, 2.04eV, 2.06eV, 2.08eV, 2.05eV, 2.03eV, 2.07eV or 2.1 eV, and thickness is 30,40,50,60,65,70,80,90 or 100.Its preparation method comprises the following steps: be attached with the deposition chambers that the insulated substrate of transparent conductive film enters PECVD equipment, gas pressure in deposition chambers is controlled at 10,100,200,300,400,500,600,800 or 1000 mTorr, depositing temperature is 150 ° of C, 160 ° of C, 170 ° of C, 180 ° of C, 190 ° of C, 200 ° of C, 210 ° of C, 185 ° of C or 220 ° of C, and the energy density of plasma that is applied on battery lead plate is 5mW/cm 2, 10mW/cm 2, 15mW/cm 2, 20mW/cm 2, 25mW/cm 2, 30mW/cm 2, 35mW/cm 2, 28mW/cm 2Perhaps 40mW/cm 2(1) the deposition chamber of PECVD equipment at first the inflatable body flow-rate ratio be the silane SiH of 1:0.5:4:1,1:0.6:4:1.2,1:0.7:4:1.4,1:0.8:4:1.5,1:0.9:4:1.7,1:0.65:4:1.1,1:0.75:4:1.3,1:0.85:4:1.6 or 1:0.95:4:1.8 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 15 s, 20 s, 25 s, 30 s, 35 s, 40 s, 45 s, 50 s or 60 s; (2) the deposition chamber of PECVD equipment again the inflatable body flow-rate ratio be the silane SiH of 1:2:4:0.2,1:3:4:0.4,1:4:4:0.6,1:2.5:4:0.3,1:3.5:4:0.5,1:2.8:4:0.25,1:3.2:4:0.35,1:3.8:4:0.45 or 1:2.3:4:0.55 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 15 s, 20 s, 25 s, 30 s, 35 s, 40 s, 45 s, 50 s or 60 s.
In Fig. 1, on the a-Si:H unit successively deposit transparent electroconductive oxide film 15 as the first back electrode and emission type metal level 17 as the second back electrode.
In Fig. 2, above-mentioned a-Si:H unit is as the first knot, continue stack the second knot a-Si:H unit, stack gradually 105 layers of the second knot p+ layer noncrystalline silicon carbide a-SiC:H films, 106 layers of the second knot p-layer noncrystalline silicon carbide a-SiC:H films, the second knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 107, the second knot n layer amorphous silicon a-Si:H film 108 and form the second knot a-Si:H unit.Wherein i layer amorphous silicon a-Si:H Intrinsic Gettering layer 107 and n layer amorphous silicon a-Si:H film 108 adopt common structure, the commonsense method preparation.And the dark conductance of p+ layer noncrystalline silicon carbide a-SiC:H film and p-layer noncrystalline silicon carbide a-SiC:H film, band gap, thickness are with the first knot a-Si:H unit.Its preparation method comprises the following steps: the deposition chambers that the amorphous silicon film battery semi-finished product after the first knot deposition is completed enter PECVD equipment, gas pressure in deposition chambers is controlled at 10mTorr, 100mTorr, 200mTorr, 300mTorr, 400mTorr, 500mTorr, 600mTorr, 800mTorr or 1000mTorr, depositing temperature is 150 ° of C, 160 ° of C, 170 ° of C, 180 ° of C, 190 ° of C, 200 ° of C, 210 ° of C, 185 ° of C or 220 ° of C, and the energy density of plasma that is applied on battery lead plate is 5mW/cm 2, 10mW/cm 2, 15mW/cm 2, 20mW/cm 2, 25mW/cm 2, 30mW/cm 2, 35mW/cm 2, 28mW/cm 2Perhaps 40mW/cm 2(1) the deposition chamber of PECVD equipment at first the inflatable body flow-rate ratio be the silane SiH of 1:0.5:3:2,1:0.6:3:2.2,1:0.7:3:2.4,1:0.8:3:2.6,1:0.9:3:2.8,1:1:3:3,1:0.65:3:2.7,1:0.75:3:2.9 or 1:0.85:3:2.5 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 20s, 22s, 24s, 26s, 28s, 30s, 25s, 27s or 23s; (2) the deposition chamber of PECVD equipment again the inflatable body flow-rate ratio be the silane SiH of 1:1:3:0.4,1:1.2:3:0.6,1:1.4:3:0.7,1:1.6:3:0.8,1:1.8:3:0.45,1:2:3:0.0.5,1:1.5:3:0.55,1:1.3:3:0.65 or 1:1.7:3:0.75 4, methane CH 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 30s, 32s, 34s, 36s, 38s, 40s, 35s, 37s or 23s.
Above-mentioned the second knot a-Si:H unit and preparation method also can adopt with a-Si:H unit and the same structure and the preparation method of preparation method.
In Fig. 2, on the second knot a-Si:H unit with Fig. 1 is on the a-Si:H unit, successively deposit transparent electroconductive oxide film 15 as the first back electrode and emission type metal level 17 as the second back electrode.
The first dorsum electrode layer 15 uses tin oxide SnO 2, zinc oxide ZnO or plug with molten metal the transparent electroconductive oxide preparation such as tin-oxide ITO; The second dorsum electrode layer 17 uses the metals such as silver-colored Ag or aluminium Al.For example form transparent conductive oxides film and aluminium film by sputtering method.Two-layer back electrode is the thickness about preferred 500nm altogether.
In the situation that a plurality of units in series are connected, the first dorsum electrode layer 15 and the second dorsum electrode layer 17 are patterned to strip.Irradiation YAG ray forms slit on the position of the horizontal 100 μ m of patterned location of distance a-Si:H unit, and the first dorsum electrode layer 15 and the second dorsum electrode layer 17 are patterned to strip.For example the YAG beam wavelength is 532nm, preferably applicable energy density 0.5J/cm 3, pulse frequency 2kHZ ray.
Further, the electric layer fringe region of thin-film solar cell of tandem type is carried out blasting treatment or the laser cleaning is processed, make the border reach the purpose of insulation.Insulating region widths is preferably 1.2cm.
At last, cover the surface of the second dorsum electrode layer 17 by packing material 19 use backboards 21.Packing material 19 and backboard 21 can use the resin material of EVA, poly-phthalimide etc.Therefore, the cell piece completed of cure package can prevent that moisture is to the invasion of the electric layer of thin-film solar cell of tandem type.
as shown in Figure 3 and Figure 4, its front transparent insulation substrate 11, transparent conductive film 13, the first knot p+ layer noncrystalline silicon carbide a-SiC:H film 101, the first knot p-layer noncrystalline silicon carbide a-SiC:H film 102, the first knot i layer amorphous silicon a-Si:H Intrinsic Gettering layer 103, the first dorsum electrode layer 15, the second dorsum electrode layer 17, the structure of encapsulant layer 19 and back of the body transparent insulation plate 21 and preparation method be same Fig. 2, just the first knot N-shaped layer adopt microcrystal silicon μ-Si:H film 104 ', thickness is below the above 100nm of 10nm, the N-shaped layer selects the purpose of microcrystal silicon structure to be and follow-up microcrystal silicon unit form better structure matching and and follow-up p layer between form better tunnelling pn knot.For structure shown in Figure 3, N-shaped layer one side in the a-Si:H unit continues stack the second knot microcrystal silicon μ-Si:H unit, stack gradually second knot p+ layer microcrystal silicon μ-Si:H film 105 ', second knot p-layer microcrystal silicon μ-Si:H film 106 ', second knot i layer microcrystal silicon μ-Si:H Intrinsic Gettering layer 107 ', second knot n layer microcrystal silicon μ-Si:H film 108 ' formations second ties microcrystal silicon μ-Si:H unit.Continue stack the 3rd knot μ-Si:H unit in Fig. 4, the 3rd knot μ-Si:H can adopt second knot μ-Si:H unit and preparation method in the unit.Wherein i layer microcrystal silicon μ-Si:H Intrinsic Gettering layer 107 ', the preparation of n layer microcrystal silicon μ-Si:H film 108 ' employing commonsense method.And p+ layer microcrystal silicon μ-Si:H film 105 ' dark conductance be 1 * 10 -3S/cm, 2 * 10 -3S/cm, 3 * 10 -3S/cm, 4 * 10 -3S/cm, 5 * 10 -3S/cm, 6 * 10 -3S/cm, 8 * 10 -3S/cm, 9 * 10 -3S/cm or 1 * 10 -2S/cm, band gap are 1.1eV, 1.13eV, 1.14eV, 1.15eV, 1.16eV, 1.17 eV, 1.18 eV, 1.19 eV or 1.2 eV, and thickness is 40,45,50,55,60,65,70,75 and 80; P-layer semiconductive thin film 106 ' dark conductance be 1 * 10 -5S/cm, 2 * 10 -5S/cm, 3 * 10 -5S/cm, 4 * 10 -5S/cm, 5 * 10 -5S/cm, 6 * 10 -5S/cm, 8 * 10 -5S/cm, 9 * 10 -6S/cm or 1 * 10 -2S/cm, band gap are 1.3eV, 1.32eV, 1.35eV, 1.38eV, 1.4eV, 1.43 eV, 1.45 eV, 1.48 eV or 1.5 eV, and thickness is 30,40,50,60,65,70,80,90 or 100.Its preparation method comprises the following steps: deposit through the first knot or the second knot the deposition chambers that the silicon-base thin-film battery semi-finished product after completing enter PECVD equipment, gas pressure in deposition chambers is controlled at 1Torr, 3Torr, 4Torr, 5Torr, 6Torr, 7Torr, 8Torr, 9Torr or 10Torr, depositing temperature is 150 ° of C, 160 ° of C, 170 ° of C, 180 ° of C, 190 ° of C, 200 ° of C, 210 ° of C, 185 ° of C or 220 ° of C, and the energy density of plasma that is applied on battery lead plate is 80mW/cm 2, 100mW/cm 2, 140mW/cm 2, 160mW/cm 2, 180mW/cm 2, 200mW/cm 2, 240mW/cm 2, 280mW/cm 2Perhaps 300mW/cm 2(1) the deposition chamber of PECVD equipment at first the inflatable body flow-rate ratio be the silane SiH of 1:100:2,1:120:2.2,1:130:2.3,1:140:2.4,1:150:2.5,1:160:2.6,1:180:2.7,1:190:2.8 or 1:200:3 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 40s, 50s, 55s, 60s, 65s, 70s, 75s, 80s or 90s; (2) the deposition chamber of PECVD equipment again the inflatable body flow-rate ratio be the silane SiH of 1:30:0.4,1:40:0.45,1:45:0.5,1:50:0.55,1:55:0.6,1:60:0.65,1:65:0.7,1:70:0.8 or 1:80:0.8 4, hydrogen H 2With through silane SiH 43% trimethyl borine TMB of dilution; Sedimentation time is 40s, 50s, 55s, 60s, 65s, 70s, 75s, 80s or 90s.

Claims (1)

1. the p-type semiconductor that uses of an amorphous silicon battery, it is characterized in that: it is made of p+ layer semiconductive thin film and p-layer semiconductive thin film, p+ layer semiconductive thin film and p-layer semiconductive thin film are noncrystalline silicon carbide a-SiC:H film, and the dark conductance of p+ layer semiconductive thin film is 1 * 10 -5～5 * 10 -5S/cm, band gap are 1.8～1.9 eV, and thickness is 40～80; The dark conductance of p-layer semiconductive thin film is 1 * 10 -7～5 * 10 -7S/cm, band gap are 2～2.1 eV, and thickness is 30～100.
CN 201220659583 2012-12-05 2012-12-05 p type semiconductor used by amorphous silicon cell Expired - Fee Related CN202977440U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220659583 CN202977440U (en) 2012-12-05 2012-12-05 p type semiconductor used by amorphous silicon cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220659583 CN202977440U (en) 2012-12-05 2012-12-05 p type semiconductor used by amorphous silicon cell

Publications (1)

Publication Number Publication Date
CN202977440U true CN202977440U (en) 2013-06-05

Family

ID=48518481

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220659583 Expired - Fee Related CN202977440U (en) 2012-12-05 2012-12-05 p type semiconductor used by amorphous silicon cell

Country Status (1)

Country Link
CN (1) CN202977440U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035757A (en) * 2012-12-05 2013-04-10 保定风帆光伏能源有限公司 Thin-film solar cell and p-type semiconductor and preparation method of p-shaped semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035757A (en) * 2012-12-05 2013-04-10 保定风帆光伏能源有限公司 Thin-film solar cell and p-type semiconductor and preparation method of p-shaped semiconductor
CN103035757B (en) * 2012-12-05 2016-04-13 保定风帆光伏能源有限公司 The preparation method of a kind of thin-film solar cells and p-type semiconductor and p-type semiconductor

Similar Documents

Publication Publication Date Title
TWI438904B (en) Method for obtaining high performance thin film devices deposited on highly textured substrates
Liu et al. Recent progress in developing monolithic perovskite/Si tandem solar cells
CN103035757B (en) The preparation method of a kind of thin-film solar cells and p-type semiconductor and p-type semiconductor
CN103563091B (en) There is the tandem solaode of the tunnel knot of improvement
Sharma et al. Simulating the role of TCO materials, their surface texturing and band gap of amorphous silicon layers on the efficiency of amorphous silicon thin film solar cells
CN114582983A (en) Heterojunction solar cell and preparation method thereof
CN104332512B (en) A kind of microcrystalline silicon film solaode and preparation method thereof
CN102157594B (en) Superlattice quantum well solar battery and preparation method thereof
CN202977440U (en) p type semiconductor used by amorphous silicon cell
CN202977439U (en) Film solar energy cell and p-type semi-conductor used for preparing film solar energy cell
KR20110093046A (en) Silicon thin film solar cell and manufacturing method thereof
CN106229361B (en) A kind of P I N generating Rotating fields and preparation method thereof and euphotic solar energy battery and preparation method thereof
CN103107236B (en) Heterojunction solar battery and preparation method thereof
CN103107240A (en) Polycrystalline silicon thin-film solar cell and manufacture method thereof
CN103985777A (en) Silicon heterojunction solar cell and manufacturing method thereof
CN103107244A (en) Preparation method for electroconductive film with cadmium oxide base light-transmitting waveband adjustable
US20110120549A1 (en) Thin film solar cell and manufacturing method threof, method for increasing carrier mobility in semiconductor device, and semiconductor device
CN115425097B (en) Method for preparing HBC solar cell and HBC solar cell thereof
CN202977493U (en) Polysilicon thin-film solar cell
CN203325950U (en) Multi-band-gap double-face light-transmission solar cell
CN103107239B (en) Heterojunction solar battery and preparation method thereof
CN116072741B (en) Solar cell, preparation method thereof, photovoltaic module and electricity utilization device
CN102496647A (en) Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof
TW201126742A (en) High-efficiency amorphous silicon photovoltaic devices
CN118630073A (en) Battery cell

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130605

Termination date: 20161205

CF01 Termination of patent right due to non-payment of annual fee