CN202975297U - Spin valve magnetoresistive zero control structure - Google Patents
Spin valve magnetoresistive zero control structure Download PDFInfo
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- CN202975297U CN202975297U CN 201220653725 CN201220653725U CN202975297U CN 202975297 U CN202975297 U CN 202975297U CN 201220653725 CN201220653725 CN 201220653725 CN 201220653725 U CN201220653725 U CN 201220653725U CN 202975297 U CN202975297 U CN 202975297U
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- spin valve
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- valve magnetoresistive
- permanent magnet
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Abstract
The utility model relates to a spin valve magnetoresistive zero control structure, which belongs to the field of measurement of weak magnetic vectors. An installation mode of the control structure is as follows: a permanent magnet and a spin valve magnetoresistive element are installed on a printed circuit board, an axis in the length direction of the permanent magnet is perpendicular to a magnetic sensitive direction of the spin valve magnetoresistive element; an alternating magnetic field coil is mounted on the printed circuit board through a coil rack; one or two spin valve magnetoresistive elements are arranged at a center position of the alternating magnetic field coil, and the axis of a first coil assembly and a second coil assembly is parallel or perpendicular to the magnetic sensitive direction of the spin valve magnetoresistive element. According to the utility model, the biased permanent magnet and a high-frequency weak magnetic field act on a shielding layer of a spin valve magnetoresistive sensor, so discreteness of differential permeability is small, thereby reducing zero random drift amount of the voltage of the spin valve magnetoresistive element.
Description
Technical field
The utility model relates to a kind of Spin Valve magnetic resistance zero-location control structure, belongs to weak magnetic vector fields of measurement.
Background technology
The survey magnetic scope of Spin Valve (or tunnel) magnetoresistance device is little many than the measurement range of Hall magnetic element, is applicable to the measurement in more weak magnetic field, and sensitivity is also higher.From bibliographical information and actual conditions, Spin Valve magnetic resistance device and fluxgate sensor compare, and performance index are on an order of magnitude.Comparatively speaking, the fluxgate sensor technical requirement is high, and frequency response is low, and quality and volume ratio are larger.And the little quality of Spin Valve magnetic resistance device volume is light, has higher frequency response.But magnetoresistive transducer exists output voltage zero-bit random drift scope larger due to the design feature of the little magnetoelectricity rete of self, can not make the widespread use of this kind device in military and civilian good.Therefore, if can solve the adverse effect of the voltage zero-bit random drift of Spin Valve magnetic resistance device, will usage space widely be arranged in the field such as military, industrial, civilian.In addition, no matter be that giant magnetoresistance, Spin Valve magnetic resistance or tunnel type magnetic resistance device all exist the undesirable of nanometer level atomic structure, produced hysteresis area larger, and the discreteness of differential permeability large (when especially working under low frequency magnetic field).In order to address the above problem, certain methods is abroad arranged, adopted metal tape to be wrapped on magnetoresistive element as U.S. Honeywell AG, then produce magnetic field by pulse current in metal tape, magnetoresistive element is magnetized can be detected by the resistance of measuring magnetic field after saturated transient state, by subsequent conditioning circuit, field signal is extracted and processes, can obtain tested magnetic field value.This device uses under the magnetic field of lower frequency and can meet the demands, but field frequency just is done for when higher, and magnetic field sensitivity neither be very high.
The utility model content
The purpose of this utility model is to provide a kind of Spin Valve magnetic resistance zero-location control structure, place the biasing permanent magnet on the specific direction of spin valve magnetoresistive elements, apply simultaneously the high frequency low-intensity magnetic field of alternation effect, permanent-magnetic potential energy and alternation magnetic potential make atomic magnetic moment under can act on, part overcomes the impacts such as the magnetic viscous, pinning of metallic compound, the discreteness of differential permeability is reduced, thereby reduced the voltage zero-bit random drift amount of spin valve magnetoresistive elements, the stability and the sensitivity that are conducive to improve element.Described control structure also is applicable to tunnel magnetoresistance element.
To achieve these goals, the technical solution of the utility model is as follows:
A kind of Spin Valve magnetic resistance zero-location control structure, described control structure comprise printed circuit board, biasing permanent magnet, alternating magnetic field coil, coil former, spin valve magnetoresistive elements or tunnel type magnetic resistance element;
Wherein, described biasing permanent magnet is rectangular parallelepiped;
Described alternating magnetic field coil comprises the first coil groups and the second coil groups, and every group comprises two coils that are parallel to each other, within the second coil groups is positioned at the first coil groups;
The mounting means of described Spin Valve magnetic resistance zero-location control structure is as follows:
Permanent magnet and spin valve magnetoresistive elements are installed on printed circuit board, and the axis of permanent magnet length direction is vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements; The alternating magnetic field coil is arranged on printed circuit board by coil former; 1 or 2 spin valve magnetoresistive elements are arranged in center at the alternating magnetic field coil, and the axis of the first coil groups and the second coil groups is parallel or vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements.
Described biasing permanent magnet is made by the lower aluminium nickel cobalt material of magnetic temperature coefficient; Preferred described biasing permanent magnet is long is 5.0mm, and the cross section is 1.2 * 0.8mm;
Acting as of permanent magnet improved the energy of the zero reset of spin valve magnetoresistive elements, and the atomic magnetic moment that produces magnetic viscous, pinning effect is easily rotated to the energy low spot; And produce a higher permanent magnetic field, improve and the measurement zero point of biasing Spin Valve magnetic resistance position-sensing unit, when avoiding outside magnetic field and being zero, the problem that magnetoresistance device sensitivity is lower.
Described alternating magnetic field coil comprises the first coil groups and the second coil groups, and every group comprises two coils that are parallel to each other, and within the second coil groups is positioned at the first coil groups, vertically arranges between two coil groups; Described loop construction is similar to the Hai Muhuosi coil.1 or 2 spin valve magnetoresistive elements are arranged in center at two groups of coils, and the axis of two groups of coils is parallel or vertical with the direction of measurement of spin valve magnetoresistive elements (the easy sensitive direction of magnetic).Amplitude, the frequency of the magnetic induction density of two groups of coils are identical, and phase differential is 90 °.Consider the responding ability of Spin Valve magnetic resistance position-sensing unit and the factors such as treatment technology of subsequent conditioning circuit, primary election produces and is similar to round scanning magnetic field, and the magnetic induction density amplitude of scanning magnetic field is 80nT, and frequency is 500kHz.The effect in this magnetic field is that the atomic nucleus of microcosmic, electronic magnetic moment are rotated to the minimum energy outer magnetic field direction; The discreteness that shows as each magnetic-field measurement point on macroscopic view is less, thereby improves magnetic measurement sensitivity and stability.
Coil former is used for determining shape and the position of coil by injection molding.
In described Spin Valve magnetic resistance zero-location control structure, biasing permanent magnet, alternating magnetic field coil, spin valve magnetoresistive elements all are arranged on printed circuit board, can form different functional modules from signal processing circuit, process software etc.Survey the appearance module, survey the closely fried module of appearance, target identification module etc. as submarine mine, torpedo, shell, rocket projectile etc., also can become the critical elements of commercial measurement, control.
Beneficial effect
The utility model acts on the screen layer of spin valve magnetoresistive sensor by will setover permanent magnet and high frequency low-intensity magnetic field, the metallic compound part that makes atomic scale is malleable direction atomic magnetic moment not, obtain the vibrational energy back wall around the external magnetic field precession, the phenomenons such as magnetic viscous, pinning have been reduced, make the discreteness of differential permeability less, thereby reduced the voltage zero-bit random drift amount of spin valve magnetoresistive elements (or tunnel magnetoresistance element), process through signal, can measure permanent weak low-intensity magnetic field to upper frequency.
Description of drawings
Fig. 1 is coil scanning magnetic field circuit theory diagrams of the present utility model.
Fig. 2 is Spin Valve magnetic resistance zero-location control structure principle chart of the present utility model, and SOP8, STO-23 packing forms for spin valve magnetoresistive elements are front view.
Fig. 3 is Spin Valve magnetic resistance zero-location control structure principle chart of the present utility model, and SOP8, STO-23 packing forms for spin valve magnetoresistive elements are right view.
Fig. 4 is Spin Valve magnetic resistance zero-location control structure principle chart of the present utility model, is the TO-94 packing forms, is front view.
Fig. 5 is Spin Valve magnetic resistance zero-location control structure principle chart of the present utility model, is the TO-94 packing forms, is right view.
Fig. 6 is diagram of printed circuit board of the present utility model, is the SOP8 packing forms of Spin Valve magnetic resistance.
Fig. 7 is diagram of printed circuit board of the present utility model, is the TO-94 packing forms of Spin Valve magnetic resistance.
Wherein, 1-printed circuit board, 2-alternating magnetic field coil, 3-biasing permanent magnet, 4-spin valve magnetoresistive elements, 5-coil former, 6-the first coil groups, 7-the second coil groups;
Embodiment
Below by embodiment, the utility model is further illustrated.
Fig. 1 is coil scanning magnetic field circuit theory diagrams of the present utility model, and R1～R3, C1, C2 represent resistance and the capacitance of coil groups and circuit.Produce the signal of 500KHz by frequency generator, producing the magnetic induction density amplitude in the first coil groups 6 is the magnetic field of 80nT, and the second coil groups 7 produces 90 ° of phase deviations by capacitor C 1, C2, and the magnetic induction density amplitude is the same frequency magnetic field of 80nT.
Fig. 2～5th, Spin Valve magnetic resistance zero-location control device architecture schematic diagram of the present utility model, wherein Fig. 2,3 is SOP8, the STO-23 packing forms of Spin Valve magnetic resistance, Fig. 4,5 is the TO-94 packing forms.Described Spin Valve magnetic resistance zero-location control device is assembled by printed circuit board 1, alternating magnetic field coil 2, biasing permanent magnet 3, spin valve magnetoresistive elements 4, coil former 5.Printed circuit board 1 is generally the epoxy plate printed board, and thickness is 1.6mm or 2.0mm.For biasing permanent magnet 3, alternating magnetic field coil 2, coil former 5 etc. are installed, arrange corresponding mounting structure in SOP8, STO-23 encapsulation type spin valve magnetoresistive elements surrounding.As install the biasing permanent magnet groove; The tinsel cord that utilization is scribed on printed circuit board 1 forms the part of coil 2, and the jack of coil 2 etc.
Fig. 6, the 7th, diagram of printed circuit board of the present utility model, wherein Fig. 6 is the SOP8 packing forms of Spin Valve magnetic resistance, Fig. 7 is the TO-94 packing forms.Described alternating magnetic field coil 2 comprises the first coil groups 6 and the second coil groups 7, and every group comprises two coil loop; Described coil loop is by diameter
Naked thread half ring of fine copper, silver-plated processing is carried out on the surface.This coil loop is fixed by welding on printed circuit board.Be the sectional view of printed wiring board in the middle of Fig. 4, the left side is two spin valve magnetoresistive elements 4 of arranging side by side of printed circuit board 1 upper surface, and the right side is the coil bottom figure of printed circuit board 1 lower surface.Fig. 5 is the coil bottom figure of TO-94 packing forms printed circuit board 1 lower surface, has four holes on the centre symmetry line of the first coil groups 6, and four jiaos of spin valve magnetoresistive elements 4 are inserted in the hole.
For SOP8, the STO-23 packing forms of spin valve magnetoresistive elements, the mounting means of described Spin Valve magnetic resistance zero-location control structure is as follows: at the bottom surface center of printed circuit board 1 fluting, be arranged in groove after described permanent magnet 3 magnetizes; Spin valve magnetoresistive elements 4 is arranged on the upper surface of printed circuit board 1; Described permanent magnet 3 is positioned at the middle part of spin valve magnetoresistive elements 4, and the axis of permanent magnet 3 length directions is vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements 4.Alternating magnetic field coil 2 is arranged on printed circuit board 1 upper surface by coil former 5; Axis at 1 of the center of alternating magnetic field coil 2 layout or 4, two groups of coils of 2 spin valve magnetoresistive elements is parallel or vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements 4.
TO-94 packing forms for spin valve magnetoresistive elements, the mounting means of described Spin Valve magnetic resistance zero-location control structure is as follows: alternating magnetic field coil 2 is arranged on printed circuit board 1 upper surface by coil former 5, axis in 1 or 2 spin valve magnetoresistive elements 4, the first coil groups 6 of the center of alternating magnetic field coil 2 layout and the second coil groups 7 is parallel or vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements 4.After magnetizing, described permanent magnet 3 is arranged in the rectangular channel of coil former 5; Described permanent magnet 3 is positioned at the middle part of Spin Valve magnetic resistance position-sensing unit 4, and the axis of permanent magnet 3 length directions is vertical with the easy sensitive direction of the magnetic of spin valve magnetoresistive elements 4.
The using method of described Spin Valve magnetic resistance zero-location control structure, to be 90 ° by phase differential, frequency is two road sine waves of 500kHz, drives respectively the first coil groups 6 and the second coil groups 7, makes it to produce in the centre of spin valve magnetoresistive elements the rotating magnetic field about a 80nT.The effect in this magnetic field is that the atomic nucleus of microcosmic, electronic magnetic moment are rotated to the minimum energy outer magnetic field direction; The discreteness that shows as each magnetic-field measurement point on macroscopic view is less, thereby improves magnetic measurement sensitivity and stability.
In sum, these are only preferred embodiment of the present utility model, is not be used to limiting protection domain of the present utility model.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (5)
1. Spin Valve magnetic resistance zero-location control structure is characterized in that: described structure comprises printed circuit board (1), biasing permanent magnet (3), alternating magnetic field coil (2), coil former (5), spin valve magnetoresistive elements (4);
Wherein, described biasing permanent magnet (3) is rectangular parallelepiped;
Described alternating magnetic field coil (2) comprises the first coil groups (6) and the second coil groups (7), and every group comprises two coils that are parallel to each other, within the second coil groups (7) is positioned at the first coil groups (6);
The mounting means of described Spin Valve magnetic resistance zero-location control structure is as follows:
At upper permanent magnet (3) and the spin valve magnetoresistive elements (4) installed of printed circuit board (1), the axis of permanent magnet (3) length direction is vertical with the easy sensitive direction of magnetic of spin valve magnetoresistive elements (4); Alternating magnetic field coil (2) is arranged on printed circuit board (1) by coil former (5); 1 or 2 spin valve magnetoresistive elements (4) are arranged in center at alternating magnetic field coil (2), and the axis of the first coil groups (6) and the second coil groups (7) is parallel or vertical with the easy sensitive direction of magnetic of spin valve magnetoresistive elements (4).
2. a kind of Spin Valve magnetic resistance zero-location control structure according to claim 1, it is characterized in that: the first coil groups (6) is identical with amplitude, the frequency of the magnetic induction density of the second coil groups (7), and phase differential is 90 °.
3. a kind of Spin Valve magnetic resistance zero-location control structure according to claim 1 is characterized in that: biasing permanent magnet (3) is long is 5.0mm, and the cross section is 1.2 * 0.8mm.
4. according to claim 1 or 3 described a kind of Spin Valve magnetic resistance zero-location control structures is characterized in that: biasing permanent magnet (3) is made by aluminium nickel cobalt material.
5. the described a kind of Spin Valve magnetic resistance zero-location control structure of according to claim 1～3 any one, is characterized in that: SOP8, STO-23 or the TO-94 packing forms of described control structure employing spin valve magnetoresistive elements (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220653725 CN202975297U (en) | 2012-11-30 | 2012-11-30 | Spin valve magnetoresistive zero control structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220653725 CN202975297U (en) | 2012-11-30 | 2012-11-30 | Spin valve magnetoresistive zero control structure |
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| CN202975297U true CN202975297U (en) | 2013-06-05 |
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| CN 201220653725 Withdrawn - After Issue CN202975297U (en) | 2012-11-30 | 2012-11-30 | Spin valve magnetoresistive zero control structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944856A (en) * | 2012-11-30 | 2013-02-27 | 中国船舶重工集团公司第七一○研究所 | Zero control structure for magnetic resistance of spin valve |
-
2012
- 2012-11-30 CN CN 201220653725 patent/CN202975297U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944856A (en) * | 2012-11-30 | 2013-02-27 | 中国船舶重工集团公司第七一○研究所 | Zero control structure for magnetic resistance of spin valve |
| CN102944856B (en) * | 2012-11-30 | 2014-10-08 | 中国船舶重工集团公司第七一○研究所 | Zero control structure for magnetic resistance of spin valve |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130605 Effective date of abandoning: 20141008 |
|
| RGAV | Abandon patent right to avoid regrant |