CN202971119U - Vacuum-pumping system device - Google Patents
Vacuum-pumping system device Download PDFInfo
- Publication number
- CN202971119U CN202971119U CN 201220559460 CN201220559460U CN202971119U CN 202971119 U CN202971119 U CN 202971119U CN 201220559460 CN201220559460 CN 201220559460 CN 201220559460 U CN201220559460 U CN 201220559460U CN 202971119 U CN202971119 U CN 202971119U
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- valve
- flange
- molecular pump
- vacuum
- pump
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Abstract
The utility model relates to a vacuum-pumping system device, which comprises a mechanical pump 1, a molecular pump 2, an interface flange 3, a flange rear valve 4, a protective valve 5, a molecular pump front valve 6 and a branch pipe valve 7, wherein the mechanical pump 1, the molecular pump 2 and the interface flange 3 are connected together through plastic-steel hard tubes; the flange rear valve 4, the protective valve 5, the molecular pump front valve 6 and the branch pipe valve 7 are respectively positioned on hard tubes in different positions; the flange rear valve 4 is used for protecting the degree of vacuum of a bakeout furnace; and the protective valve 5 is used for protecting the pumps. The vacuum-pumping system device can pump away impurities released out from a vessel for generating indium phosphide and the growth material baking process timely, so as to ensure the quality of the indium phosphide growth material, and the vacuum-pumping system device is simple in structure, easy to implement, and low in manufacturing cost.
Description
Technical field
The utility model relates to a kind of pressure control device, and more particularly, the utility model relates to the pumped vacuum systems device in a kind of indium phosphide growth material bake process.
Background technique
A series of advantageous characteristic of indium phosphide make it be widely used in many high-tech sectors such as optical communication, microwave, millimetric wave device, radioresistance solar cells, have irreplaceability, and its strategic importance is self-evident.In order to improve the quality of indium phosphide, improve its electrical properties, the defective that research and the growth of control indium phosphide single crystal and heat treatment process produce is an important approach.In recent years, the high temperature anneal method was used to reduce the residual heat stress in indium phosphide single crystal, the electricity uniformity of improving wafer and preparation semi-insulating inp material.
In the bake process of common indium phosphide growth material, need to carry out high-temperature baking to vessel and the production material thereof of producing indium phosphide under high vacuum, with removal impurity, otherwise can affect indium phosphide growth material mass formation.
According to the indium phosphide function requirement, need specialized designs pumped vacuum systems device to satisfy required degree of vacuum and required precision, to obtain high-quality indium phosphide growth material.
The model utility content
The purpose of this utility model is to provide a kind of pumped vacuum systems device, can in time take the impurity that discharges in the vessel of producing indium phosphide and growth material bake process away, obtains high vacuum state, guarantees indium phosphide growth material quality.
The purpose of this utility model is achieved through the following technical solutions: a kind of pumped vacuum systems device is provided, and it comprises valve and manifold valve before valve after mechanical pump, molecular pump, flange, flange, Protective valve, molecular pump.It is characterized in that mechanical pump, molecular pump and flange are that hard tube by plastic-steel structure links together, after described flange before valve, Protective valve, molecular pump valve and manifold valve lay respectively on the hard tube of diverse location.
Pumped vacuum systems device of the present utility model can in time be taken the impurity that discharges in the vessel of producing indium phosphide and growth material bake process away, indium phosphide growth material quality is guaranteed, and whole pumped vacuum systems apparatus structure is simple, is easy to realize, fabricating cost is low.
Description of drawings
Fig. 1 is the structural representation of the utility model pumped vacuum systems device.
In figure: mechanical pump 1, molecular pump 2, flange 3, after flange, valve 4, valve 6 before Protective valve 5, molecular pump, manifold valve 7
Embodiment
As shown in Figure 1, the utility model pumped vacuum systems device comprises valve 6 and manifold valve 7 before valve 4 after mechanical pump 1, molecular pump 2, flange 3, flange, Protective valve 5, molecular pump.It is characterized in that mechanical pump 1, molecular pump 2 and flange 3 are that hard tube by plastic-steel structure links together, after described flange before valve 4, Protective valve 5, molecular pump valve 6 and manifold valve 7 lay respectively on the hard tube of diverse location.After described flange, valve 4 is when baking oven degree of vacuum reaches, and throttle down plays the effect of protection baking oven degree of vacuum.Be connected with atmosphere when described Protective valve 5 is opened, when baking oven degree of vacuum reaches, play the protection pump.
Working principle is as follows: with baking oven with flange 3 be connected after; before Protective valve 5 and molecular pump, valve 6 is in closed condition; after flange, valve 4 and manifold valve 7 are in open mode; start mechanical pump 1; the dust of larger particles and impurity are taken away, prevented the obstruction to molecular pump 2, then valve before molecular pump 6 is in open mode; after starting molecular pump 2, manifold valve 7 is in closed condition.Reach impose a condition after with flange after valve 4 be in closed condition, then Protective valve 5 is in open mode, be communicated with atmosphere, then close mechanical pump 1, molecular pump 2 gets final product.
Claims (1)
1. pumped vacuum systems device; it is characterized in that: described pumped vacuum systems device comprises valve and manifold valve before valve after mechanical pump, molecular pump, flange, flange, Protective valve, molecular pump; mechanical pump, molecular pump and flange are that the hard tube by plastic-steel structure links together, after flange before valve, Protective valve, molecular pump valve and manifold valve lay respectively on the hard tube of diverse location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220559460 CN202971119U (en) | 2012-10-29 | 2012-10-29 | Vacuum-pumping system device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220559460 CN202971119U (en) | 2012-10-29 | 2012-10-29 | Vacuum-pumping system device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202971119U true CN202971119U (en) | 2013-06-05 |
Family
ID=48512203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220559460 Expired - Lifetime CN202971119U (en) | 2012-10-29 | 2012-10-29 | Vacuum-pumping system device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202971119U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104368566A (en) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | Indium phosphide growth crucible cleaning method |
| CN106762537A (en) * | 2017-02-08 | 2017-05-31 | 中国科学院沈阳科学仪器股份有限公司 | Pumped vacuum systems and method |
| CN105240244B (en) * | 2015-11-17 | 2017-08-15 | 中国工程物理研究院激光聚变研究中心 | One kind obtains 10‑9The device and method thereof of Pa magnitude ultrahigh vacuum degree |
-
2012
- 2012-10-29 CN CN 201220559460 patent/CN202971119U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104368566A (en) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | Indium phosphide growth crucible cleaning method |
| CN105240244B (en) * | 2015-11-17 | 2017-08-15 | 中国工程物理研究院激光聚变研究中心 | One kind obtains 10‑9The device and method thereof of Pa magnitude ultrahigh vacuum degree |
| CN106762537A (en) * | 2017-02-08 | 2017-05-31 | 中国科学院沈阳科学仪器股份有限公司 | Pumped vacuum systems and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130605 |
|
| CX01 | Expiry of patent term |