CN202917430U - Gas mixing apparatus of vacuum treatment apparatus - Google Patents
Gas mixing apparatus of vacuum treatment apparatus Download PDFInfo
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- CN202917430U CN202917430U CN201220642548.2U CN201220642548U CN202917430U CN 202917430 U CN202917430 U CN 202917430U CN 201220642548 U CN201220642548 U CN 201220642548U CN 202917430 U CN202917430 U CN 202917430U
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- gas
- impeller
- gas mixer
- vacuum treatment
- blade
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Abstract
The utility model relates to a gas mixing apparatus of a vacuum treatment apparatus which is transversely arranged in a gas mixing pipe of a vacuum treatment apparatus. The gas mixing apparatus comprises a disc-shaped impeller; and a plurality of blades axially arranged on the circumferential part of the impeller, wherein part of first ends of the blades is in connection with the circumference of the impeller and second ends are applied with the gas mixing pipe. The gas mixing apparatus can promote gas mixing before gas penetrates into a cavity of a vacuum treatment apparatus.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of gas mixer for vacuum treatment installation.
Background technology
Plasma treatment appts utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is to pass into the reacting gas that contains suitable etching agent source gas in vacuum reaction chamber, and then this vacuum reaction chamber carried out radio-frequency (RF) energy input, with activated reactive gas, excite and keep plasma, so that respectively the material layer on the etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate processed.
In semicon industry, the reacting gas that passes in the plasma processor platform generally is by modulation gas and process gas mix gained, such as CVD or etching machine bench etc., but because these two kinds of gas flow rate differences, air pressure is also just different, when entering at the same time the device that mixes different in flow rate gas, the process gas that flow velocity is high is known from experience the side that the modulation gas that flow velocity is slow is squeezed in the gas hybrid channel all the time, so that two kinds of gases mix even not, abundant not, the concentration and the quality dissatisfaction that cause etching gas, thus impact is to the processing procedure effect of semiconductor arts piece.
Therefore, need in the industry a kind of gas mixer that the gas that passes in the plasma processor platform can be mixed.
The utility model content
For the problems referred to above in the background technology, the utility model proposes a kind of gas mixer of vacuum treatment installation.
The utility model first aspect provides a kind of gas mixer for vacuum treatment installation, and it is horizontally set in the gas mixing tube road of described vacuum treatment installation, and described gas mixer comprises:
One impeller is disc;
Several radially are arranged on the blade of the circumferential section of impeller, and the part of the first end of described blade is connected in the circumference of described impeller, fit in the second end and described gas mixing tube road.
Further, the first end of described blade be not connected in impeller circumference part and described impeller not in one plane.
Further, have between described several blades overlapping.
Alternatively, described gas mixer is integrated.
Further, described gas mixer also comprises a drive unit, and described drive unit drives described blade and rotates take the center of impeller as axle.
Further, the span of the length of described blade is 1mm ~ 5mm.
Further, the span of the diameter of described impeller is 1mm ~ 5mm.
Further, the material of described blade is stainless steel, and the material of described impeller is stainless steel.
Further, to be connected in the span of length of the circumference of described impeller be 0.3mm ~ 4mm to described first end.
The utility model second aspect provides a kind of vacuum treatment installation, and described vacuum treatment installation comprises the described gas mixer of the utility model first aspect.
The gas mixer of the vacuum treatment installation that the utility model provides can mix process gas equably.
Description of drawings
Fig. 1 is the structural representation of vacuum treatment installation;
Fig. 2 is the structural representation of gas mixer;
Fig. 3 (a) and Fig. 3 (b) are the structural representations according to the gas mixer of a specific embodiment of the present utility model.
Wherein, same or analogous modules/devices/assembly has been indicated same or analogous modules/devices/assembly.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described.
Fig. 1 is the structural representation of vacuum treatment installation.Vacuum treatment installation 1 as shown in the figure has a process chambers 10, and process chambers 10 is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode 11 and the bottom electrode 13 that are arranged in parallel in the process chambers 10.Usually, the zone between top electrode 11 and bottom electrode 13 is processing region, and this zone will form high-frequency energy to light and to keep plasma.Place substrate W to be processed above bottom electrode 13, this substrate W can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Reacting gas is input in the process chambers 10 from gas source 12, one or more radio-frequency power supplies 14 can be applied to individually on the bottom electrode 13 or be applied to respectively simultaneously on top electrode 11 and the bottom electrode 13, in order to radio-frequency power is transported on the bottom electrode 13 or top electrode 11 and bottom electrode 13 on, thereby produce large electric field in that process chambers 10 is inner.Most of electric field lines are comprised in the processing region A between top electrode 11 and the bottom electrode 13, and this electric field accelerates the electronics that is present on a small quantity process chambers 11 inside, makes it the gas molecule collision with the reacting gas of inputting.These collisions cause the ionization of reacting gas and exciting of plasma, thereby at process chambers 10 interior generation plasmas.The neutral gas molecule of reacting gas has lost electronics when standing these highfields, stay the ion of positively charged.The ion of positively charged accelerates towards bottom electrode 13 directions, is combined with the neutral substance in the processed substrate, excites substrate processing, i.e. etching, deposit etc.In vacuum treatment installation, be provided with confinement ring 16, in order to the discharge of the reacting gas use of control and when the charged particle in the reacting gas passes through this plasma restraint device with they charge neutrality, substantially constrain in the processing region thereby will discharge, with the cavity pollution problem that prevents to cause in the plasma treatment appts use procedure.Wherein, confinement ring 16 is by being connected in directly or indirectly earth terminal 17.Certain suitable position at vacuum treatment installation 1 is provided with the exhaust gas region territory, and the exhaust gas region territory is connected with external exhaust apparatus (for example the vacuum pump pump 15), in order to will extract processing region out with the reacting gas of crossing and bi-product gas in processing procedure.
Wherein, vacuum treatment installation comprises etching machine bench, MOCVD board, CVD board etc., and the required gas of its processing procedure comprises reacting gas and modulation gas.Multipath gas is transported in mixing duct/chamber by different gas pipelines, and multipath gas fully mixes in mixing duct/chamber, then enters gas source 12.
Fig. 2 is the structural representation according to the gas mixer of a specific embodiment of the present utility model.As shown in Figure 2, the first gas A, the second gas B and the 3rd gas C respectively the gas inlet pipe road by separately enter gas mixing tube road 19, mix fully in gas mixing tube road 19 that then the gas that mixes is conveyed into gas source 12.Gas source 12 links to each other with the chamber of vacuum treatment chamber 1, by gas spray the gas that mixes is conveyed into chamber to carry out processing procedure.Between gas mixing tube road 19 and gas source 12 and gas source 12 and vacuum treatment installation 1, be respectively arranged with valve, be used for the break-make of control gas.
Need to prove, although for simplicity's sake, although gas mixing tube road 19 in accompanying drawing 2 only the form with single pipeline illustrate, but, it will be appreciated by those skilled in the art that gas mixing tube road 19 is the pipelines with certain camber and length, to provide gas well-mixed space.
Fig. 3 (a) and Fig. 3 (b) show the structural representation according to the gas mixer of a specific embodiment of the present utility model, and wherein, described gas mixer 20 is horizontally set in the gas mixing tube road 19 of described vacuum treatment installation 1.Particularly, described gas mixer comprises an impeller 201, is disc; Several radially are arranged on the blade 202 of the circumferential section of impeller 201, and a part of 202a of the first end of described blade is connected in the circumference of described impeller 201, and the inwall in the second end 202b and described gas mixing tube road 19 is fitted.
Should be appreciated that the inwall 19a that the second end 202b of first end 202a that the circumferential section of impeller 201 is connected with blade and blade 202 is connected with the gas mixing duct all should have the mutually link of interlock/connection/coupling.For simplicity's sake, repeat no more herein, in the prior art, ripe technical support is arranged all.
Further, the first end 202a of described blade 202 be not connected in impeller 201 circumference part and described impeller 201 not in one plane.Particularly, because the first end 202a of blade 202 is not the circumferential section that fits in impeller 201 fully, but a part fits in circumferential section, and another part is not connected with any assembly, and slightly unsettled and perk.
Further, have between described several blades 202 overlapping.Particularly, upwards have in one party between each blade 202 and adjacent two blades overlapping, but contact must not arranged.
According to a specific embodiment of the present utility model, above-mentioned being arranged so that all forms a gas passage between per two blades 202, this gas passage so that each road gas (in the present embodiment, gas comprises the first gas A, the second gas B and the 3rd gas C) enter gas mixer 20 from meeting its face, and mobile toward core from the periphery of gas passage 19 according to the guiding of gas passage.And according to this specific embodiment, some gas passages are shown off equably substantially and are radially arranged centered by the center of impeller 201, so that the first gas A, the second gas B and the 3rd gas C are according to producing counterclockwise or clockwise eddy current.Because the first gas A, the second gas B and the 3rd gas C can produce an eddy current by gas mixer 20 time, accelerate the mutually counterdiffusion of the first gas A, the second gas B and the 3rd gas C, mix more abundant.
Each assembly of gas mixer 20 is independent respectively among the embodiment mentioned above, and last mutually configuration forms.Alternatively, described gas mixer 20 can also be integrated.Particularly, only need between gas mixer 20 and gas mixing duct 19 connection be set gets final product.
Further, change example according to one of above-described embodiment, described gas mixer also comprises a drive unit (not shown), and described drive unit drives described blade 202 and rotates take the center of impeller 201 as axle.The rotation of blade 202 can be accelerated mutual mixing between the first gas A, the second gas B and the 3rd gas C and the flow velocity of gas.
Need to prove that the structure of drive unit and implementation be the enforcement of the mode of existing software, hardware or software and hardware combining in the prior art, ripe technical support is arranged, for simplicity's sake, this paper repeats no more.
Further, the span of the length of described blade is 1mm ~ 5mm.
Further, the span of the diameter of described impeller is 1mm ~ 5mm.
Further, the material of described blade is stainless steel, and the material of described impeller is stainless steel.
Further, to be connected in the span of length of the circumference of described impeller be 0.3mm ~ 4mm to described first end.
The utility model second aspect also provides a kind of vacuum treatment installation, and described vacuum treatment installation comprises gas mixer mentioned above.
Although content of the present utility model has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.After those skilled in the art have read foregoing, for multiple modification of the present utility model with to substitute all will be apparent.Therefore, protection range of the present utility model should be limited to the appended claims.
Claims (10)
1. gas mixer that is used for vacuum treatment installation, it is horizontally set in the gas mixing tube road of described vacuum treatment installation, it is characterized in that, and described gas mixer comprises:
One impeller is disc;
Several radially are arranged on the blade of the circumferential section of impeller, and the part of the first end of described blade is connected in the circumference of described impeller, fit in the second end of described blade and described gas mixing tube road.
2. gas mixer according to claim 1 is characterized in that, the first end of described blade be not connected in impeller circumference part and described impeller not in one plane.
3. gas mixer according to claim 2 is characterized in that, has overlapping between described several blades.
4. gas mixer according to claim 1 is characterized in that, described gas mixer is integrated.
5. gas mixer according to claim 1 is characterized in that, described gas mixer also comprises a drive unit, and described drive unit drives described blade and rotates take the center of impeller as axle.
6. gas mixer according to claim 1 is characterized in that, the span of the length of described blade is 1mm ~ 5mm.
7. gas mixer according to claim 1 is characterized in that, the span of the diameter of described impeller is 1mm ~ 5mm.
8. gas mixer according to claim 1 is characterized in that, the material of described blade is stainless steel, and the material of described impeller is stainless steel.
9. gas mixer according to claim 1 is characterized in that, the span of length that described first end is connected in the circumference of described impeller is 0.3mm ~ 4mm.
10. a vacuum treatment installation is characterized in that, described vacuum treatment installation comprises each described gas mixer of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220642548.2U CN202917430U (en) | 2012-11-28 | 2012-11-28 | Gas mixing apparatus of vacuum treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220642548.2U CN202917430U (en) | 2012-11-28 | 2012-11-28 | Gas mixing apparatus of vacuum treatment apparatus |
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| Publication Number | Publication Date |
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| CN202917430U true CN202917430U (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201220642548.2U Expired - Lifetime CN202917430U (en) | 2012-11-28 | 2012-11-28 | Gas mixing apparatus of vacuum treatment apparatus |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105788917A (en) * | 2016-05-17 | 2016-07-20 | 苏州司巴克自动化设备有限公司 | Movable contact bridge automatic assembling method using mounting trajectories |
| CN107107009A (en) * | 2014-12-04 | 2017-08-29 | 瑞典电池公司 | Oxidation of Carbon Monoxide device |
| CN111321392A (en) * | 2020-04-22 | 2020-06-23 | 西安航空制动科技有限公司 | Gas stirring device of chemical vapor deposition furnace |
| CN115287630A (en) * | 2022-08-04 | 2022-11-04 | 长鑫存储技术有限公司 | Semiconductor device preparation device and preparation method |
-
2012
- 2012-11-28 CN CN201220642548.2U patent/CN202917430U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107107009A (en) * | 2014-12-04 | 2017-08-29 | 瑞典电池公司 | Oxidation of Carbon Monoxide device |
| US10464027B2 (en) | 2014-12-04 | 2019-11-05 | Powercell Sweden Ab | Carbon monoxide oxidation device |
| CN107107009B (en) * | 2014-12-04 | 2020-08-18 | 瑞典电池公司 | Carbon monoxide oxidation device |
| CN105788917A (en) * | 2016-05-17 | 2016-07-20 | 苏州司巴克自动化设备有限公司 | Movable contact bridge automatic assembling method using mounting trajectories |
| CN105788917B (en) * | 2016-05-17 | 2017-10-20 | 苏州司巴克自动化设备有限公司 | With the automatic assemble method of dynamic tactile bridge for installing track |
| CN111321392A (en) * | 2020-04-22 | 2020-06-23 | 西安航空制动科技有限公司 | Gas stirring device of chemical vapor deposition furnace |
| CN115287630A (en) * | 2022-08-04 | 2022-11-04 | 长鑫存储技术有限公司 | Semiconductor device preparation device and preparation method |
| CN115287630B (en) * | 2022-08-04 | 2024-03-26 | 长鑫存储技术有限公司 | Semiconductor device preparation device and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Gas mixing apparatus of vacuum treatment apparatus Effective date of registration: 20150202 Granted publication date: 20130501 Pledgee: China Development Bank Co. Pledgor: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20130501 Pledgee: China Development Bank Co. Pledgor: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI |
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| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130501 |
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| CX01 | Expiry of patent term |