CN202888175U - Packaging structure of high-power LED (Light Emitting Diode) integrated chip - Google Patents
Packaging structure of high-power LED (Light Emitting Diode) integrated chip Download PDFInfo
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- CN202888175U CN202888175U CN 201220556267 CN201220556267U CN202888175U CN 202888175 U CN202888175 U CN 202888175U CN 201220556267 CN201220556267 CN 201220556267 CN 201220556267 U CN201220556267 U CN 201220556267U CN 202888175 U CN202888175 U CN 202888175U
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Abstract
The utility model discloses a packaging structure of a high-power LED (Light Emitting Diode) integrated chip. The packaging structure of the high-power LED integrated chip comprises a substrate and chips. The packaging structure of the high-power LED integrated chip is characterized in that the chips are provided with arrangement structures in which seven chips are connected in series and five chips are connected in parallel; and the chips are connected in series through conducting lines. The packaging structure of the high-power LED integrated chip adopts single high-brightness LED chip with 1 watt, the chips are arranged in a mode of connecting seven chips in series and connecting five chips in parallel, thereby the luminous flux can reach more than 4000LM at the working voltage of 24 volts, which is nearly the same as that of a full-halogen lamp, and as a result, the demands on lighting in some special fields can be met, and the electric quantity is saved.
Description
Technical field
The utility model relates to the LED lamp, specifically is a kind of encapsulating structure of great power LED integrated chip.
Background technology
Used 30 watts of LED integrated optical sources adopt ten strings three mode also to arrange, and are used in commercial track spotlight industry, the brightness that does not reach traditional perhalogeno lamp, and its effect can not satisfy the light demand of many high-grade clothings, jewelry brand shop.
The utility model content
Problem to be solved in the utility model is the defective that overcomes prior art, and a kind of encapsulating structure of great power LED integrated chip is provided.
For solving the problems of the technologies described above, the encapsulating structure of a kind of great power LED integrated chip described in the utility model comprises pedestal, chip, it is characterized in that described chip is seven strings five arrangement architectures also.
The encapsulating structure of described a kind of great power LED integrated chip is characterized in that connecting by wire between the described chip.
Therefore, the encapsulating structure of a kind of great power LED integrated chip described in the utility model has changed the encapsulating structure of chip, can reach higher brightness at low-work voltage, has satisfied the light demand of some special dimensions, has saved electric weight.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further detail:
The encapsulating structure of a kind of great power LED integrated chip described in the utility model comprises pedestal 1, chip 2, it is characterized in that described chip 2 is seven strings five arrangement architectures also, connects by wire 3 between the chip 2.
The utility model changes 30 watts of LED integrated optical sources, the ten strings three arrangements of chips mode also of routine into 35 watt of seven string five arrangements of chips mode also, under 24 volts operating voltage, its luminous flux can reach more than 4000 lumens, can compare with the perhalogeno lamp, satisfy the light demand of some special dimensions, saved electric weight.
The above only is preferred embodiment of the present utility model, not in order to limiting the utility model, all any modifications of doing within spirit of the present utility model and principle, is equal to and replaces and improvement etc., all is included within the protection range of the present utility model.
Claims (2)
1. the encapsulating structure of a great power LED integrated chip comprises pedestal (1), chip (2), it is characterized in that described chip (2) is seven strings five arrangement architectures also.
2. the encapsulating structure of a kind of great power LED integrated chip according to claim 1 is characterized in that between the described chip (2) by wire (3) series connection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220556267 CN202888175U (en) | 2012-10-29 | 2012-10-29 | Packaging structure of high-power LED (Light Emitting Diode) integrated chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220556267 CN202888175U (en) | 2012-10-29 | 2012-10-29 | Packaging structure of high-power LED (Light Emitting Diode) integrated chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202888175U true CN202888175U (en) | 2013-04-17 |
Family
ID=48079570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201220556267 Expired - Fee Related CN202888175U (en) | 2012-10-29 | 2012-10-29 | Packaging structure of high-power LED (Light Emitting Diode) integrated chip |
Country Status (1)
Country | Link |
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CN (1) | CN202888175U (en) |
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2012
- 2012-10-29 CN CN 201220556267 patent/CN202888175U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130417 Termination date: 20131029 |