CN202871738U - Levelness calibration system for beam extraction electrode of injection machine - Google Patents
Levelness calibration system for beam extraction electrode of injection machine Download PDFInfo
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- CN202871738U CN202871738U CN 201220510665 CN201220510665U CN202871738U CN 202871738 U CN202871738 U CN 202871738U CN 201220510665 CN201220510665 CN 201220510665 CN 201220510665 U CN201220510665 U CN 201220510665U CN 202871738 U CN202871738 U CN 202871738U
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- extraction electrode
- line extraction
- ion source
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Abstract
The utility model relates to the field of semiconductor manufacturing and particularly relates to a levelness calibration system for a beam extraction electrode of an injection machine. Distance sensing members are arranged on an ion source reaction chamber to sense the levelness of a beam extraction electrode located in front of the distance sensing members, and a logic operation board and a motor control board are used to control the beam extraction electrode to recover to the horizontal position when the beam extraction electrode inclines. Therefore, beam uniformity reduction and unequal wafer resistance value after element injection due to the shift of the relative levelness between the beam extraction electrode and the ion source reaction chamber can be avoided, the yield rate of products can be increased, the injection machine can be automatically monitored and repaired in the running state, the process production cost can be reduced, and the work efficiency can be greatly improved.
Description
Technical field
The utility model relates to semiconductor integrated circuit and manufacturing field thereof, relates in particular to a kind of implanter line extraction electrode horizontal alignment system.
Background technology
Develop rapidly along with integrated circuit, the variation of essence has all occured in the structure of semi-conductive components and parts and manufacturing process than before thereof, especially now along with the increase of integrated level, namely the integrated more circuit block on unit are requires more automation of semiconductor manufacturing facility, reliable and safety.
Very important processing step in semi-conductive components and parts preparation technology intermediate ion injection technology, but when carrying out ion implantation technology, but its uniformity of injecting element has no way of finding in the doping process, if inject element dosage skewness on wafer, will cause the decline of product yield, especially prepare components and parts at large-sized wafer, because the loss that the injection element dosage skewness in the ion implantation technology causes is immeasurable.
At present, domestic and international various types of ion implantores are although can both obtain uniform line on overall design.But when some key function module occurred level skew, can obtain inhomogeneous line, such as the line extraction electrode.Fig. 1 is line extraction electrode traditional in the utility model background technology and the structural representation of ion source generation cavity, and Fig. 2 is the schematic diagram that the resistance inequality appears in the wafer that causes when occurring the skew of relative level between extraction electrode and the ion source generation cavity in the utility model background technology; As shown in Figure 1, because line extraction electrode 11 in injection device adjustment line process, needs frequent all around or moves up and down, pass through to guarantee maximum beam; Can cause the relative level skew between line extraction electrode 11 and the ion source generation cavity 12, and when the ion source generation cavity 12 of safeguarding implanter or extraction electrode 11, because installation is not in place, also can cause occurring between extraction electrode 11 and the ion source generation cavity 12 skew of relative level; When occurring the skew of relative level occurring between extraction electrode 11 and the ion source generation cavity 12, will cause the beam homogeneity variation of drawing, and then cause the wafer resistance value after element injects the high low phenomenon on one side in resistance one side of wafer as shown in Figure 2 to occur accordingly, thereby reduced the yield of product.
But when operating personnel find the skew of relative level to occur between extraction electrode and the ion source generation cavity, owing to be in the driving state at implanter, and present all types of implanter all has no idea automatically to monitor and automatically repair, can only stop, need to expend a large amount of time and manpower overhauls, greatly increase the explained hereafter cost, reduced operating efficiency.
The utility model content
The utility model discloses a kind of implanter line extraction electrode horizontal alignment system, comprise line extraction electrode and ion source generation cavity, described line extraction electrode is positioned at the place ahead of described ion source generation cavity, wherein, also comprise logical calculated plate, Electric Machine Control plate and be positioned at least two on the parallel straight line of same and described ion generation cavity apart from induction pieces;
Describedly be fixedly connected with described ion source generation cavity apart from induction pieces, described logical calculated plate is respectively with described Electric Machine Control plate with describedly communicate to connect apart from induction pieces;
Described Electric Machine Control plate is controlled described line extraction electrode and is swung.
Above-mentioned implanter line extraction electrode horizontal alignment system, wherein, described is two apart from induction pieces, and these two both sides that are positioned at described ion source generation cavity apart from the induction pieces symmetry, measurement be positioned at two apart from the left surface of the described line extraction electrode in induction pieces dead ahead with respect to two vertical ranges apart from induction pieces, and this distance values information is sent to described logical calculated plate.
Above-mentioned implanter line extraction electrode horizontal alignment system, wherein, described logical calculated plate also is electrically connected with described Electric Machine Control plate.
Above-mentioned implanter line extraction electrode horizontal alignment system, wherein, described ion source generation cavity is positioned at the dead astern that described line extraction electrode is positioned at.
Above-mentioned implanter line extraction electrode horizontal alignment system, wherein, described ion source generation cavity is positioned on the horizontal line.
Above-mentioned implanter line extraction electrode horizontal alignment system, wherein, described Electric Machine Control plate is controlled itself and being connected of described logical calculated plate.
In sum, owing to adopted technique scheme, the utility model proposes a kind of implanter line extraction electrode horizontal alignment system, by arrange at the ion source reaction chamber apart from induction pieces, be positioned at the levelness of its place ahead line extraction electrode with induction, when if this line extraction electrode tilts, then recover horizontal level by logical operation plate and Electric Machine Control plate control line extraction electrode, and then avoid when occurring the skew of relative level occurring between line extraction electrode and the ion source generation cavity, the beam homogeneity variation that causes, cause the wafer resistance value after element injects uneven, not only increased the yield of product, can also realize automatic monitoring and the reparation of implanter under the driving state, thereby reduce the explained hereafter cost, and greatly improve operating efficiency.
Description of drawings
Fig. 1 is line extraction electrode traditional in the utility model background technology and the structural representation of ion source generation cavity;
Fig. 2 is the schematic diagram that the resistance inequality appears in the wafer that causes when occurring the skew of relative level between extraction electrode and the ion source generation cavity in the utility model background technology;
Fig. 3 is the structural representation of the utility model implanter line extraction electrode horizontal alignment system;
Fig. 4 is the connection diagram of each parts in the utility model implanter line extraction electrode horizontal alignment system.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is further described:
Fig. 3 is the structural representation of the utility model implanter line extraction electrode horizontal alignment system;
Fig. 4 is the connection diagram of each parts in the utility model implanter line extraction electrode horizontal alignment system.
As shown in Figure 3, a kind of implanter line of the utility model extraction electrode horizontal alignment system, be mainly used in the injection technology of wafer, comprise line extraction electrode 21, Electric Machine Control plate (not indicating among the figure), logical calculated plate (not indicating among the figure), be positioned at the ion source generation cavity 22 on the horizontal line and be positioned on the same level line apart from induction pieces 23 and apart from induction pieces 24, wherein, line extraction electrode 21 is positioned at the dead ahead of ion source generation cavity 22, apart from induction pieces 23 be fixedly installed on respectively the both sides of ion source generation cavity 22 apart from induction pieces 24 horizontal symmetrical, be positioned at two apart from induction pieces 23 with measurement, the left surface of the line extraction electrode 21 in 24 dead aheads with respect to two apart from induction pieces 23,24 horizontal range, and this distance values information is sent to the logical calculated plate carries out data analysis and process, the logical calculated plate will be sent to the electrode control board to the result that above-mentioned distance values information analysis is processed, the Electric Machine Control buttress swings according to this data processed result control line extraction electrode 21, so that line extraction electrode 21 returns to horizontal level, and then realize injecting the uniform ion beam draw wafer is carried out uniform element.
Further, the Electric Machine Control plate is controlled itself and being connected of logical calculated plate.
Concrete, as shown in Figure 3-4, apart from induction pieces 23 and the left surface that measures the line extraction electrode 21 that is positioned at its dead ahead apart from induction pieces 24 by light beam 25 with respect to two apart from induction pieces 23,24 horizontal range value x, y, and this distance value x, y transmitted be sent to the logical calculated plate by the wire communication mode, this logical calculated plate value of adjusting the distance x, y value are carried out data and are processed, as carry out the difference computing of x, y, be x-y=d, if d=0 illustrates that then line extraction electrode 21 is positioned at horizontal level at this moment, then do not need line extraction electrode 21 positions are repaired; If the left surface of d ≠ 0 explanation line extraction electrode this moment 21 is positioned at non-horizontal level, then need the position of line extraction electrode 21 is repaired, at this moment, the logical calculated buttress carries out logical operation according to the difference between x and the y, to draw the data d that adjusts for the line extraction electrode 21 of this position, and should adjust data d and be sent to the Electric Machine Control plate, the Electric Machine Control plate recovers the position according to these adjustment data d control line extraction electrode 21 again and swings; Afterwards, the numerical value of proceeding between aforementioned x and the y is judged, constantly adjusts for the positional information of line extraction electrode 21 to realize circulation, finally so that line extraction electrode 21 is in the horizontal level parallel with ion source generation cavity 22.
In sum, owing to adopted technique scheme, the utility model proposes a kind of implanter line extraction electrode horizontal alignment system, by arrange at the ion source reaction chamber apart from induction pieces, be positioned at the levelness of its place ahead line extraction electrode with induction, when if this line extraction electrode tilts, then recover horizontal level by logical operation plate and Electric Machine Control plate control line extraction electrode, and then avoid when occurring the skew of relative level occurring between line extraction electrode and the ion source generation cavity, the beam homogeneity variation that causes, cause the wafer resistance value after element injects uneven, not only increased the yield of product, can also realize automatic monitoring and the reparation of implanter under the driving state, thereby reduce the explained hereafter cost, and greatly improve operating efficiency.
By explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, based on the utility model spirit, also can do other conversion.Although above-mentioned utility model has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, read above-mentioned explanation after, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present utility model and scope as.Any and all scope of equal value and contents all should be thought still to belong in intention of the present utility model and the scope in claims scope.
Claims (6)
1. implanter line extraction electrode horizontal alignment system, comprise line extraction electrode and ion source generation cavity, described line extraction electrode is positioned at the place ahead of described ion source generation cavity, it is characterized in that, also comprise logical calculated plate, Electric Machine Control plate and be positioned at least two on the parallel straight line of same and described ion generation cavity apart from induction pieces;
Describedly be fixedly connected with described ion source generation cavity apart from induction pieces, described logical calculated plate is respectively with described Electric Machine Control plate with describedly communicate to connect apart from induction pieces;
Described Electric Machine Control plate is controlled described line extraction electrode and is swung.
2. implanter line extraction electrode horizontal alignment according to claim 1 system, it is characterized in that, described is two apart from induction pieces, and these two both sides that are positioned at described ion source generation cavity apart from the induction pieces horizontal symmetrical, measurement be positioned at two apart from the left surface of the described line extraction electrode in induction pieces dead ahead with respect to two vertical ranges apart from induction pieces, and this distance values information is sent to described logical calculated plate.
3. implanter line extraction electrode horizontal alignment according to claim 1 system is characterized in that described logical calculated plate also is electrically connected with described Electric Machine Control plate.
4. implanter line extraction electrode horizontal alignment according to claim 1 system is characterized in that described ion source generation cavity is positioned at the dead astern that described line extraction electrode is positioned at.
5. implanter line extraction electrode horizontal alignment according to claim 1 system is characterized in that described ion source generation cavity is positioned on the horizontal line.
6. the described implanter line of any one extraction electrode horizontal alignment system is characterized in that according to claim 1-5, and described Electric Machine Control plate is controlled itself and being connected of described logical calculated plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220510665 CN202871738U (en) | 2012-10-08 | 2012-10-08 | Levelness calibration system for beam extraction electrode of injection machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220510665 CN202871738U (en) | 2012-10-08 | 2012-10-08 | Levelness calibration system for beam extraction electrode of injection machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202871738U true CN202871738U (en) | 2013-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220510665 Expired - Lifetime CN202871738U (en) | 2012-10-08 | 2012-10-08 | Levelness calibration system for beam extraction electrode of injection machine |
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| Country | Link |
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| CN (1) | CN202871738U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109890123A (en) * | 2019-01-11 | 2019-06-14 | 陕西正泽生物技术有限公司 | A kind of cyclotron ion source position correction tool and method |
-
2012
- 2012-10-08 CN CN 201220510665 patent/CN202871738U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109890123A (en) * | 2019-01-11 | 2019-06-14 | 陕西正泽生物技术有限公司 | A kind of cyclotron ion source position correction tool and method |
| CN109890123B (en) * | 2019-01-11 | 2021-06-25 | 陕西正泽生物技术有限公司 | Tool and method for correcting position of ion source of cyclotron |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130410 |