CN202736895U - Quartz window for protecting terminal point detecting probe - Google Patents
Quartz window for protecting terminal point detecting probe Download PDFInfo
- Publication number
- CN202736895U CN202736895U CN 201220336287 CN201220336287U CN202736895U CN 202736895 U CN202736895 U CN 202736895U CN 201220336287 CN201220336287 CN 201220336287 CN 201220336287 U CN201220336287 U CN 201220336287U CN 202736895 U CN202736895 U CN 202736895U
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- CN
- China
- Prior art keywords
- terminal point
- probe
- quartz window
- quartzy form
- detects
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
Disclosed is a quartz window for protecting a terminal point detecting probe. The quartz window is located in the chamber wall outside the chamber for generating dry etching. One end of the quartz window close to the chamber is located in the chamber wall and keeps a gap with the chamber. One side of the quartz window away from the chamber is provided with a groove, and the front end of the terminal point detecting probe is located in the groove. The installing position of the quartz window in the utility model is unchanged. The contact between the terminal point detecting probe and the quartz window is changed from the hard contact to the suspended non-contact connecting state, thereby ensuring the detecting effect of the terminal point detecting probe while avoiding the wearing of the terminal point detecting probe. Meanwhile, as the quartz window is shortened to some degree in size, the quartz window can be avoided exposing in the plasma atmosphere, thereby realizing the double effects of protecting terminal point detecting probe and prolonging the service lifetime of the quartz window.
Description
Technical field
The utility model relates to the checkout gear in the semiconductor dry etch process, specifically belongs to a kind of quartzy form of protecting terminal point to detect probe.
Background technology
In semiconductor fabrication processes, dry etching is a kind of technique commonly used, and in the dry etching process, plasma (plasma) reacts with silicon chip surface, then removes surfacing.Because dry etch process does not have etching selection ratio well to subsurface material, monitor silicon chip surface in the etching technics and need the material of etching whether etching is clean so in etching process, need terminal point to detect technology, to reduce the overetch to subsurface material.
At present, DPS Centura(plasma etching) the terminal point checking device in the equipment uses state as shown in Figure 1, occur the cavity 1 of etching reaction ' in be full of plasma, chamber wall 2 ' in be provided with a quartzy form 3 '.As shown in Figure 2, this quartz form 3 ' formed by an entity cylindrical section and a hollow circuit cylinder section, described hollow circuit cylinder Duan Yiduan stretch into cavity 1 ' in, the lateral surface of entity cylindrical section be threaded connection a terminal point detect the probe 4 ', this terminal point detect the probe 4 ' have optical fiber 5 '.Terminal point detects that probe 4 ' by quartzy form 3 ' collection cavity 1 ' interior light intensity signal (such as the arrow among Fig. 1), the light intensity signal that then collects can judge by a series of conversions such as interferometers whether etching technics is finished.
In said structure, terminal point detect the quartzy form 3 of probe 4 ' be pressed on ' the surface, both are rigid connections, for a long time friction can make expensive terminal point detect probe 4 ' damage easily, not only impact detects precision and effect, and has increased testing cost.Simultaneously, quartzy form 3 ' part be exposed to always cavity 1 ' plasma in, this plasma is to quartzy form 3 ' have corrasion, therefore use quartzy form 3 after a period of time ' the surface can therefore be needed periodic replacement by serious etching, thereby increase cost.
The utility model content
The technical problems to be solved in the utility model provides a kind of quartzy form of protecting terminal point to detect probe, can protect terminal point to detect probe, reduces simultaneously plasma to the etching of quartzy form.
For solving the problems of the technologies described above; protection terminal point of the present utility model detects the quartzy form of probe; described quartzy form is arranged in the outer chamber wall of cavity that dry etching occurs; described quartzy form also and between the cavity leaves an intersegmental crack near an end of cavity in the wall of chamber; quartzy form has a groove away from a side of cavity, and the front end that terminal point detects probe is arranged in groove.
Further, described quartzy form comprises left and right two sections quartz construction.Described right section quartz construction is entity structure, leaves an intersegmental crack between its right side and the cavity, is provided with groove in the described left section quartz construction.
Preferably, described left section quartz construction is hollow structure.
Preferably, described right section quartz construction and left section quartz construction are column structure.
Preferably, the sectional area of described right section quartz construction is less than the sectional area of left section quartz construction.
Quartzy form of the present utility model installation site is constant, terminal point is detected probe change over unsettled discontiguous connection status with contacting by rigid contact of quartzy form, can guarantee that not only terminal point detects the effect that detects of probe, has also avoided terminal point to detect the wearing and tearing of probe; Simultaneously because quartzy form has shortened certain size, make it avoid being exposed in the plasma atmosphere, play the double effects that the protection terminal point detects probe and prolongs self in useful life.
Description of drawings
Fig. 1 is the use state diagram of existing terminal point checking device;
Fig. 2 is the structural representation of existing quartzy form;
Fig. 3 is the use state diagram of terminal point checking device of the present utility model;
Fig. 4 is the structural representation of quartzy form of the present utility model.
Wherein description of reference numerals is as follows:
1,1 ' be cavity 2,2 ' be chamber wall
3,3 ' be quartzy form 4,4 ' detect probe for terminal point
5,5 ' be that optical fiber 6 is groove
31 is that right section quartz construction 32 is left section quartz construction
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail.
The protection terminal point that the utility model provides detects the quartzy form 3 of probe 4; as shown in Figure 3; be arranged in the chamber wall 2 outside the cavity 1 that dry etching occurs; described quartzy form 3 near an end of cavitys 1 in chamber wall 2 and and cavity 1 between leave an intersegmental crack; quartzy form 3 has a groove 6 away from a side of cavity 1, and the front end that terminal point detects probe 4 is arranged in groove 6 vacantly.Described terminal point detects probe 4 and has the optical fiber 5 that gathers light intensity signal.
Better, as shown in Figure 4, quartzy form 3 comprises that left and right two sections quartz construction 32,31, two sections quartz construction are column structure, and the sectional area of right section quartz construction 31 is less than the sectional area of left section quartz construction 32.Wherein, right section quartz construction 31 is entity structure, leaves an intersegmental crack between its right side and the cavity 1; Be provided with groove 6 in the left section quartz construction 32, preferred, left section quartz construction is hollow structure.
Quartzy form of the present utility model installation site is constant, terminal point is detected probe change over unsettled discontiguous connection status with contacting by rigid contact of quartzy form, terminal point is detected between probe and left section quartz construction certain gap is arranged, can guarantee that not only terminal point detects the effect that detects of probe, also avoided terminal point to detect the wearing and tearing of probe, terminal point has been detected probe realized preferably protection; There are an intersegmental crack in while right section quartz construction and cavity, have avoided quartzy form to be exposed in the plasma atmosphere, prevent that quartzy form from by plasma etching, having prolonged the useful life of quartzy form.
More than by specific embodiment the utility model is had been described in detail, but these are not to consist of restriction of the present utility model.In the situation that does not break away from the utility model principle, those skilled in the art can make many distortion and improvement to the structure of quartzy form, and these also should be considered as protection range of the present utility model.
Claims (7)
1. quartzy form of protecting terminal point to detect probe; described quartzy form (3) is arranged in the outer chamber wall (2) of cavity (1) that dry etching occurs; it is characterized in that: described quartzy form (3) near an end of cavity (1) be arranged in chamber wall (2) and and cavity (1) between leave an intersegmental crack; quartzy form (3) has a groove (6) away from a side of cavity (1), and the front end that terminal point detects probe (4) is arranged in groove (6) vacantly.
2. protection terminal point according to claim 1 detects the quartzy form of probe, it is characterized in that: described quartzy form (3) comprises left and right two sections quartz construction.
3. protection terminal point according to claim 2 detects the quartzy form of probe; it is characterized in that: described right section quartz construction (31) is entity structure; leave an intersegmental crack between its right side and the cavity (1), be provided with groove (6) in the described left section quartz construction (32).
4. protection terminal point according to claim 2 detects the quartzy form of probe, it is characterized in that: described left section quartz construction (32) is hollow structure.
5. protection terminal point according to claim 4 detects the quartzy form of probe, it is characterized in that: described right section quartz construction (31) and left section quartz construction (32) are column structure.
6. protection terminal point according to claim 2 detects the quartzy form of probe, it is characterized in that: the sectional area of described right section quartz construction (31) is less than the sectional area of left section quartz construction (32).
7. protection terminal point according to claim 1 detects the quartzy form of probe, it is characterized in that: described terminal point detects probe (4) and has the optical fiber (5) that gathers light intensity signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220336287 CN202736895U (en) | 2012-07-12 | 2012-07-12 | Quartz window for protecting terminal point detecting probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220336287 CN202736895U (en) | 2012-07-12 | 2012-07-12 | Quartz window for protecting terminal point detecting probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202736895U true CN202736895U (en) | 2013-02-13 |
Family
ID=47662568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220336287 Expired - Fee Related CN202736895U (en) | 2012-07-12 | 2012-07-12 | Quartz window for protecting terminal point detecting probe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202736895U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538741A (en) * | 2018-04-11 | 2018-09-14 | 武汉华星光电技术有限公司 | Dry etching apparatus cavity gas sensing system |
-
2012
- 2012-07-12 CN CN 201220336287 patent/CN202736895U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538741A (en) * | 2018-04-11 | 2018-09-14 | 武汉华星光电技术有限公司 | Dry etching apparatus cavity gas sensing system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131225 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131225 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130213 Termination date: 20150712 |
|
| EXPY | Termination of patent right or utility model |