CN202721142U - Thin film solar cell manufactured through low temperature sputtering process - Google Patents
Thin film solar cell manufactured through low temperature sputtering process Download PDFInfo
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- CN202721142U CN202721142U CN 201220234809 CN201220234809U CN202721142U CN 202721142 U CN202721142 U CN 202721142U CN 201220234809 CN201220234809 CN 201220234809 CN 201220234809 U CN201220234809 U CN 201220234809U CN 202721142 U CN202721142 U CN 202721142U
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Abstract
The utility model discloses a thin film solar cell manufactured through low temperature sputtering process. A molybdenum film with the thickness of about 0.35 to 1.0 micron is plated on a soda-lime glass substrate, a CIGS film and crystal with the thickness of 0.7 to 2.0 microns or 1.0 micron standard thickness is plated on the molybdenum film, and a 'p-n junction' film area is arranged on the CIGS film and crystal and upper surfaces of the CIGS film and crystal. Low temperature sputtering is used, selenium (Se) is not lost, the gas release of the glass substrate is facilitated, the adhesion between films is promoted, and the growth of the 'CIGS' crystal is started. In the table, components of the 'indium' and 'gallium' are in a common ratio, and the ratio of Ga/(Ga+In) is also very ideal, is close to 0.3 and is not larger than 0.3 so as to obtain an optimal 'band gap', and is suitable for the thin film solar cell in mass production and accurate low sputtering process manufacture.
Description
Technical field
The utility model relates to relevant film " photovoltaic solar " battery chip, is specifically related to the solar cell that the low temperature sputtering technology is made.
Background technology
Existing " Copper Indium Gallium Selenide (CIGS) " thin-film photovoltaic solar chip manufacturing process adopts " sodium calcium (soda lime) " glass substrate, with 400-500 ℃ high temperature evaporation: copper, indium, gallium, the materials such as two selenium; Or use first sputtering technology, plate wherein three kinds of metal unit cellulosic material after, adopt again " selenizing " technique, add the selenium material.This is one and be difficult to repeats, and technique very slowly; Also have another kind of method, use and electroplate depositing technology, or use " metal " or " metal oxide " to make " Copper Indium Gallium Selenide (CIGS) " thin-film photovoltaic solar chip through nano print technique; Neither being adapted to of these techniques produced in batches, single " selenizing (Selenization) " technique, just be 8 hours, and need use a large amount of toxic gases, progressively make " copper indium gallium (CIS) " thin layer " selenium (Se) change " one-tenth " " Copper Indium Gallium Selenide CIGS) " thin layer such as use " hydrogen selenide ".The defective of traditional processing technology, can use " low temperature, the technique of " Copper Indium Gallium Selenide (CIGS) " quaternary element cosputtering solves; This technique can allow " selenium " to participate in " Copper Indium Gallium Selenide (CIGS) " thin layer in the process of low temperature sputter coating, and it is very long to have avoided employing, danger, poisonous " selenizing " technique; In addition, " low temperature sputter " can accelerate coating speed, because when " high temperature sputter ", the atom of sputter material and the bonding force of high-temperature substrates are relatively poor, the material atom rebounds easily; In addition, " high temperature sputter " impels " selenium " drain evaporation easily, need to be when rear technique, and a large amount of replenish " selenium ".Generally when electroplating " Copper Indium Gallium Selenide (CIGS) " thin layer, traditional technique, be need to be on the substrate of " high temperature " plated film; Reason larger in order to grow " Copper Indium Gallium Selenide (CIGS) " crystal, the minimum size of crystal, this is the over half of the thickness of thin layer (1.0-2.0 micron) own, then about the 0.5-1.0 micron; Too small crystal can produce a large amount of crystal boundary (grain boundaries), causes " electron-hole " again to recombinate, and affects " conversion efficiency " of battery.Traditional technique, another purpose of using high-temperature substrates is to promote " soda-lime glass (soda-lime glass) " inner " sodium ", after passing the molybdenum film layer, be diffused in " Copper Indium Gallium Selenide " thin layer, " sodium " ion can promote the crystal growth of " Copper Indium Gallium Selenide (CIGS) " film that more multi-band has " p-type alloy "; But also it should be noted that too much " sodium " ion, also have negative impact; This patent is the reasonable control for all these parameters, ensures the batch system technique of repeatability; The technique that replaces " Copper Indium Gallium Selenide (CIGS) " high temperature coevaporation is sought and can be repeated, and can accurately control the technique that is suitable for producing in batches.
This patent is equally applicable to the film similar to " Copper Indium Gallium Selenide (CIGS) " composition and makes; Comprise, but be not limited to: " sulphur (S) " replacement " selenium (Se) ", or " aluminium (Al) " replacement " indium (In) ", or " zinc (Zn) " replacement " indium (In) ", or " tin (Sn) " replacement " gallium (Ga) ", wait the technique of similar " Copper Indium Gallium Selenide (CIGS) " thin film solar to make.
The utility model content
The utility model addresses the above problem the thin-film solar cells that a kind of suitable batch production and accurately low temperature sputtering technology manufacturing are provided.
For addressing the above problem, the utility model is realized by following scheme: the thin-film solar cells that the low temperature sputtering technology is made, be coated with about 0.35 to 1.0 micron thickness molybdenum film at the soda-lime glass substrate, be coated with about 0.7 to 2.0 micron thickness at described molybdenum film, or the CIGS thin-film of 1.0 microns standard thicknesses and crystal, at CIGS thin-film and crystal and its upper surface " p-n junction " film zone 11 is arranged.
Be coated with cadmium sulfide or the zinc sulphide of 0.05 micron thickness on described CIGS thin-film and the crystal.
Be coated with the insulating barrier zinc oxide of about 0.1 micron thickness on described cadmium sulfide or the zinc sulphide.
Be coated with the conductive, transparent zinc oxide ginseng aluminium of about 0.35 to 1.9 micron thickness on the described zinc oxide.
Be coated with the nickel of about 0.05 micron thickness on the described zinc oxide ginseng aluminium, be coated with about 3.0 micron thickness aluminium films on this nickel.
Be coated with one deck protection nickel of about 0.05 micron thickness on the described aluminium film.
Be coated with the sodium calcium cover glass of about 1.0 to 4.0 millimeters thick on the described protection nickel.
Be coated with the sodium calcium cover glass of 3.2 millimeters standard thicknesses on the described protection nickel.
The utility model is behind about 250 ℃ of sputter coatings, and what variation the quaternary element composition in target and the film does not almost have.Be just accord with simultaneously symbol optimized " alpha phase " required composition.Illustrate and use the low temperature sputter, " selenium (Se) " run off, and can promote the glass substrate venting, promote the degree of adhesion between film, and start the growth of " Copper Indium Gallium Selenide " crystal.The composition of " indium " and " gallium " is our common ratio in the table, the ratio of Ga/ (Ga+In) also is very good, will be near 0.3 but be no more than 0.3, in the hope of optimized " bandwidth (band gap) ", the thin-film solar cells of suitable batch production and accurately low temperature sputtering technology manufacturing.
Description of drawings
Fig. 1 is the utility model structural section figure;
Fig. 2 is wherein a kind of conceptual schematic drawing of the utility model annealing furnace;
Fig. 3 is the plane graph of stove in Fig. 2.
Among Fig. 2: its numeral is,
13 embedding pots;
14 glass substrates;
15 semiclosed interior furnace apparatus;
16 metallic support grids;
17 " road inferior (Knudsen) air vents (orifice) " effect is run off to alleviate " selenium ";
18 infrared radiations or resistance heater are installed in the upper and lower of annealing substrate, guarantee on glassly, and same heat is experienced in the bottom surface;
19 interior stove evacuation valves;
20 outer stove evacuation valves;
21 outer vacuum furnaces.
Embodiment
As shown in Figure 1; the thin-film solar cells that the low temperature sputtering technology is made; be coated with about 0.35 to 1.0 micron thickness molybdenum film 2 at soda-lime glass substrate 1; be coated with about 0.7 to 2.0 micron thickness at described molybdenum film 2; or the CIGS thin-film of 1.0 microns standard thicknesses and crystal 3; at CIGS thin-film and crystal 3 and its upper surface " p-n junction " film zone is arranged; be coated with cadmium sulfide or the zinc sulphide 4 of 0.05 micron thickness on CIGS thin-film and the crystal 3; be coated with the insulating barrier zinc oxide 5 of about 0.1 micron thickness on cadmium sulfide or the zinc sulphide 4; be coated with the conductive, transparent zinc oxide ginseng aluminium 6 of about 0.35 to 1.9 micron thickness on the zinc oxide 5; be coated with the nickel 7 of about 0.05 micron thickness on the zinc oxide ginseng aluminium 6; be coated with about 3.0 micron thickness aluminium films 8 on this nickel 7; be coated with one deck protection nickel 9 of about 0.05 micron thickness on the aluminium film 8; be coated with the sodium calcium cover glass 10 of about 1.0 to 4.0 millimeters thick on the protection nickel 9, be coated with the sodium calcium cover glass 10 of 3.2 millimeters standard thicknesses on the protection nickel 9.The superiors of " Copper Indium Gallium Selenide " absorbed layer are very narrow " p-n junction " districts; This is " negatron " that discharges through sunlight " photovoltaic " effect, with " hole " of soaring, forms " p-n junction " zone in " negatron-hole ", and it must be arranged on the superiors of " Copper Indium Gallium Selenide (CIGS) " layer.The bottom of " Copper Indium Gallium Selenide (CIGS) ", rich " p-type " conduction must be arranged, and the position, upper strata of " Copper Indium Gallium Selenide (CIGS) ", need to reduce " p-type conduction " composition, make the upper surface layer of " Copper Indium Gallium Selenide (CIGS) " thin layer (then be and " cadmium sulfide (CdS) " thin layer joint, namely in very narrow " p-n junction " district) scarce " copper " (copper poor), " cadmium (Cd) " in " cadmium sulfide (the CdS) " thin layer on upper strata can down be spread, can be penetrated into the upper surface layer of " Copper Indium Gallium Selenide " film, make it convert " n-type " conduction to.
Simultaneously, we also will control " sodium " the upwards infiltration in " soda-lime glass " well, and guarantee not allow " selenium (Se) " to run off; Because rich " copper " or the film of " sodium dopings " is arranged, all " Copper Indium Gallium Selenide " film of promotion " p-type "; And lack the upper surface layer of " Copper Indium Gallium Selenide (the CIGS) " thin layer of " copper ", and can promote to show layer on " Copper Indium Gallium Selenide " of " n-type ", promote the formation of " p-n junction ".
Fig. 2, Fig. 3 are the employed designs of batch production, are the vacuum chamber bodies with heater, and interior stove (15) is with air vent 17, and its design dependency air vent 17 effects are to alleviate in " Copper Indium Gallium Selenide " film the loss of " selenium "; This design can guarantee in the annealing process procedure, keeps the atmosphere of " selenium (Se) ", and need not to seal vacuum pump, prevents the gas leakage refluence of annealing furnace under atmospheric environment.Under the environment of " P " air pressure, the aperture area of air vent 17 (A), " molecule matter (the Molar Mass) " of " M " component, the gas factor of " R ", under " t " annealing time, the loss of " selenium (Se) " equals: AtP/ √ (2 π RT/M); Air vent 17 diameters of supposing us are 0.05-0.3mm, and we make the air pressure of " selenium (Se) " atmosphere under the condition of not using toxic gas, can guarantee not allow " selenium (Se) " to run off.
Fig. 2, Fig. 3 show the interior vacuum chamber body 15 of placing glass substrate 14, balance is placed on metal side's frame 16, this side's frame is placed an embedding pot 13 that bears solid-state " selenium (Se) ", the upper and lower of vacuum chamber body is placed equidistant heater 18, can experience uniform heat with the assurance glass substrate, not have the base plate stress that the temperature difference causes.Vertical cabin body wall all around has cooling system device; When cooling, " selenium (Se) " can be set in the metope of cabin body, and can not drop on the glass substrate.19,20 vacuum valves vacuumize as interior cabin body and outer cabin body.
This patent is to utilize " selenium (Se) " and " Copper Indium Gallium Selenide " crystal growing that similar hyperbar evaporation coefficient (450-600C is all arranged, annealed 0.5 to 4 hour, or more accurate 500-570C annealed 20 minutes), so substrate operates under this same temperature with " selenium (Se) ".During annealing, we vacuumize at interior stove 15 and outer stove 21, and valve 19 and 20 is closed, and heater 18 is opened; When cooling, " selenium (Se) " is set on the colder cabin body metope; Another kind of way can be installed in independent heating control system with the crucible of placing " selenium (Se) "; Anneal complete after, first the heater of embedding crucible is turned off, allow it cool off first, " selenium (Se) " will solidify back first in the embedding crucible.
Claims (8)
1. the thin-film solar cells made of low temperature sputtering technology, it is characterized in that: be coated with about 0.35 to 1.0 micron thickness molybdenum film (2) at soda-lime glass substrate (1), be coated with about 0.7 to 2.0 micron thickness at described molybdenum film (2), or the CIGS thin-film of 1.0 microns standard thicknesses and crystal (3), with its upper surface " p-n junction " film zone (11) is arranged in CIGS thin-film and crystal (3).
2. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 1 is characterized in that: the cadmium sulfide or the zinc sulphide (4) that are coated with 0.05 micron thickness on described CIGS thin-film and the crystal (3).
3. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 2 is characterized in that: the insulating barrier zinc oxide (5) that is coated with about 0.1 micron thickness on described cadmium sulfide or the zinc sulphide (4).
4. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 3 is characterized in that: the conductive, transparent zinc oxide ginseng aluminium (6) that is coated with about 0.35 to 1.9 micron thickness on the described zinc oxide (5).
5. the thin-film solar cells made of low temperature sputtering technology according to claim 4, it is characterized in that: be coated with the nickel (7) of about 0.05 micron thickness on the described zinc oxide ginseng aluminium (6), be coated with about 3.0 micron thickness aluminium films (8) on this nickel (7).
6. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 5 is characterized in that: one deck protection nickel (9) that is coated with about 0.05 micron thickness on the described aluminium film (8).
7. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 6 is characterized in that: the sodium calcium cover glass (10) that is coated with about 1.0 to 4.0 millimeters thick on the described protection nickel (9).
8. the thin-film solar cells of low temperature sputtering technology manufacturing according to claim 6 is characterized in that: the sodium calcium cover glass (10) that is coated with 3.2 millimeters standard thicknesses on the described protection nickel (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201220234809 CN202721142U (en) | 2012-05-23 | 2012-05-23 | Thin film solar cell manufactured through low temperature sputtering process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220234809 CN202721142U (en) | 2012-05-23 | 2012-05-23 | Thin film solar cell manufactured through low temperature sputtering process |
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| CN202721142U true CN202721142U (en) | 2013-02-06 |
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| CN 201220234809 Expired - Fee Related CN202721142U (en) | 2012-05-23 | 2012-05-23 | Thin film solar cell manufactured through low temperature sputtering process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655422A (en) * | 2014-11-12 | 2016-06-08 | 东莞日阵薄膜光伏技术有限公司 | Dual perovskite/copper-indium-gallium-selenium solar battery |
-
2012
- 2012-05-23 CN CN 201220234809 patent/CN202721142U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655422A (en) * | 2014-11-12 | 2016-06-08 | 东莞日阵薄膜光伏技术有限公司 | Dual perovskite/copper-indium-gallium-selenium solar battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DONGGUAN RIZHEN FILM PHOTOVOLTAIC TECHNOLOGY CO., Free format text: FORMER OWNER: BENGBU GLASS INDUSTRY AND DESIGN INSTITUTE;CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD. Effective date: 20150817 Free format text: FORMER OWNER: DONGGUAN RIZHEN FILM PHOTOVOLTAIC TECHNOLOGY CO., LTD. GUANGDONG KAISHENG PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20150817 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150817 Address after: 523808, Songshan Industrial Park, Songshan Industrial Road, North four, Songshan Lake Arts crafts emporium, Dongguan, Guangdong, 418 Patentee after: Dongguan Zhen film photovoltaic Technology Co., Ltd. Address before: 518000, Songshan Industrial Park, Songshan Industrial Road, North four, Songshan Lake Arts crafts emporium, Dongguan, Guangdong, 414-418 Patentee before: Bengbu design Institute of Glass Industry Patentee before: Dongguan Zhen film photovoltaic Technology Co., Ltd. Patentee before: Guangdong Kaisheng Photoelectric Technology Co.,Ltd. |
|
| DD01 | Delivery of document by public notice | ||
| DD01 | Delivery of document by public notice |
Addressee: Dongguan Zhen film photovoltaic Technology Co., Ltd. Document name: Notification of Termination of Patent Right |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 Termination date: 20170523 |