CN202694827U - High-conductive film - Google Patents
High-conductive film Download PDFInfo
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- CN202694827U CN202694827U CN 201220353125 CN201220353125U CN202694827U CN 202694827 U CN202694827 U CN 202694827U CN 201220353125 CN201220353125 CN 201220353125 CN 201220353125 U CN201220353125 U CN 201220353125U CN 202694827 U CN202694827 U CN 202694827U
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Abstract
The utility model relates to a high-conductive film, belongs to the technical field of manufacturing of photo-electronic devices, and is mainly applicable to manufacturing of a capacitive touch screen and a large-size display device. The high-conductive film comprises a flexible polyester (PET) base material on a bottom layer, wherein a silicon oxide (SiOx) thin film and a niobium pentoxide (Nb2O5) thin film are sequentially sputtered on the flexible PET base material from bottom to top; and a silicon dioxide (SiO2) thin film and an indium tin oxide / silver / indium tin oxide (ITO/Ag/ITO) composite film are sequentially coated on the Nb2O5 thin film. The SiOx thin film is high in adhesion, so the adhesive force of the thin film and the base material can be increased. A transparent conductive composite material ITO/Ag/ITO is coated on the SiO2 thin film, the refractive index of the transparent conductive composite material ITO/Ag/ITO is higher than that of the SiO2 thin film, and the high-conductive film is in accordance with a principle that the refractive indexes of thin films of an H/L/H high-transmittance film system are alternated.
Description
Technical field
The utility model relates to a kind of high conducting film, belongs to optoelectronic device manufacturing technology field, and is main with transporting in the middle of the making of capacitive touch screen and large display device.
Background technology
The vacuum winding coating technique is exactly to prepare one deck or multilayer has the technology of the film of certain performance by methods such as thermal evaporation or magnetron sputterings at the coiled strip substrate surface in vacuum chamber.Continuous production is simple, easily transportation, the advantages such as arbitrary shape, flexible parcel that can conveniently cut into are important directions of magnetron sputtering technique development always because flexible parent metal has.The present topmost application of nesa coating (TCO) is ITO, also has other AZO etc.Ito thin film is a kind of semiconductor transparent membrane, and it is the abbreviation of tin indium oxide (Indium Tin Oxide) English name.As transparency conductive electrode, the ITO film has the good transparency and conductivity.Use this characteristic of ITO film, often it is used in the transparency electrode of display device in the reality.
Up till now, in flexible transparent substrate, namely the upper ITO film plating process of polyethylene terephthalate (PET) has a variety ofly, although method is a lot, purpose is exactly nothing but to improve transmitance and the conductivity of film.Transmitance and conductance are most important to the quality that shows product, and touch-screen is no exception certainly.But the PET material itself has between certain refractive index n=1.5 ~ 1.6, the words material upper surface that directly contacts with air and the reflectivity 4.0 ~ 5.3% of lower surface, and the light transmittance of PET material itself can only be between 89.4 ~ 92% in other words.Directly plate on this basis the ITO film, because the ITO material has certain absorbability to light, the light transmittance of at present a lot of products does not reach more than 85%, only has several the light transmittances of producing the ITO film of Japan to be higher than 85%.
In order not affect the light transmittance of film, the method that reduces the ITO film thickness with the flexible base, board PET of high transmission rate in practical operation reduces ITO to visible Optical Absorption.But the thing followed is, the conductivity of bringing because thickness the reduces problem such as diminish.
Summary of the invention
In order to overcome defects, the high conducting film that provides a kind of electric conductivity outstanding is provided the purpose of this utility model.
In order to achieve the above object, the utility model adopts following technical scheme:
A kind of high conducting film, it comprises the flexible PET base material of bottom, on flexible PET base material from bottom to top successively sputter SiO is arranged
xFilm, Nb2O5 film are coated with SiO2 film and ITO/Ag/ITO composite membrane successively on the Nb2O5 film.
Described flexible PET base material refractive index n=1.56, diaphragm thickness is 50-200um.
Described SiO
xFilm thickness is 5-20nm.
Described SiO2 film refractive index n=1.46, thickness is 30-60nm.
Described ITO/Ag/ITO composite membrane sheet resistance is about 50-150 Ω/, and thickness is 20-100nm.
Described Nb2O5 film refractive index n=2.3, thickness is 5-10nm.
The beneficial effects of the utility model:
The utility model is sputter one deck SiOx film on the PET flexible membrane at first, because the SiOx film has very strong adhesiveness, can increase the adhesive force of film and base material; Then magnetron sputtering one deck Nb2O5 film prepares the SiO2 film as the protective film of low-refraction as high refractive index layer at the Nb2O5 film on the SiOx film.Make in the middle of the process of touch-screen, usually carry out etching with Acidic Liquid on the ITO film, the protective layer that therefore need to be insoluble to soda acid comes the diaphragm architecture; At SiO2 film plating transparent conducting Composite material ITO/Ag/ITO, its refractive index is far above the SiO2 film at last, and meeting H/L/H high permeability film is the principle that film refractive index just alternates.In the time of post-processed, do not affect transmitance in order to make metal A g film, need to stretch or shrink process to flexible parent metal, the Ag film can be split into tiny imbricated texture, is mixed in the middle of two ITO retes, has improved greatly the ITO Film conductivity.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Be elaborated below in conjunction with 1 pair of the utility model of accompanying drawing:
A kind of high conducting film, it comprises the flexible PET base material 1 of bottom, on flexible PET base material 1 from bottom to top successively sputter SiO is arranged
xFilm 2, Nb2O5 film 3 are coated with SiO2 film 4 and ITO/Ag/ITO composite membrane 5 successively on Nb2O5 film 3.
Described flexible PET base material 1 refractive index n=1.56, diaphragm thickness is 50-200um.
Described SiO
xFilm 2 thickness are 5-20nm.
Described SiO2 film 4 refractive index ns=1.46, thickness is 30-60nm.
Described ITO/Ag/ITO composite membrane 5 sheet resistances are about 50-150 Ω/, and thickness is 20-100nm.
Described Nb2O5 film 3 refractive index ns=2.3, thickness is 5-10nm.
Claims (6)
1. high conducting film, it comprises the flexible PET base material (1) of bottom, it is characterized in that: on flexible PET base material (1) from bottom to top successively sputter SiO is arranged
xFilm (2), Nb2O5 film (3) are coated with SiO2 film (4) and ITO/Ag/ITO composite membrane (5) successively on Nb2O5 film (3).
2. high conducting film according to claim 1, it is characterized in that: described flexible PET base material (1) refractive index n=1.56, diaphragm thickness is 50-200um.
3. high conducting film according to claim 1 is characterized in that: described SiO
xFilm (2) thickness is 5-20nm.
4. high conducting film according to claim 1, it is characterized in that: described SiO2 film (4) refractive index n=1.46, thickness is 30-60nm.
5. high conducting film according to claim 1, it is characterized in that: described ITO/Ag/ITO composite membrane (5) sheet resistance is about 50-150 Ω/, and thickness is 20-100nm.
6. high conducting film according to claim 1, it is characterized in that: described Nb2O5 film (3) refractive index n=2.3, thickness is 5-10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220353125 CN202694827U (en) | 2012-07-20 | 2012-07-20 | High-conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220353125 CN202694827U (en) | 2012-07-20 | 2012-07-20 | High-conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202694827U true CN202694827U (en) | 2013-01-23 |
Family
ID=47550409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220353125 Expired - Fee Related CN202694827U (en) | 2012-07-20 | 2012-07-20 | High-conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202694827U (en) |
-
2012
- 2012-07-20 CN CN 201220353125 patent/CN202694827U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20170720 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |