CN202678716U - Drive device of large-power semiconductor laser - Google Patents
Drive device of large-power semiconductor laser Download PDFInfo
- Publication number
- CN202678716U CN202678716U CN 201220296334 CN201220296334U CN202678716U CN 202678716 U CN202678716 U CN 202678716U CN 201220296334 CN201220296334 CN 201220296334 CN 201220296334 U CN201220296334 U CN 201220296334U CN 202678716 U CN202678716 U CN 202678716U
- Authority
- CN
- China
- Prior art keywords
- current
- power semiconductor
- sampling resistor
- high power
- semiconductor lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model relates to a drive device of a large-power semiconductor laser. A microprocessor comprises a DA interface 1, a DA interface 2 and an AD interface, and the drive unit is characterized by comprising a current-limiting protection circuit module and a current setting module which are connected in series, and according to the current-limiting protection circuit module in the utility model, the large-power semiconductor laser, a first sampling resistor, and a second sampling resistor of the current setting module are connected in series, the current sampled by the first sampling resistor and the second sampling resistor is the actual current over the large-power semiconductor laser, thus, the current-limiting protection is relatively accurate, the speed of response is relatively high, and the stability of the device is relatively high.
Description
Technical field
The utility model belongs to semiconductor laser Driving technique field, the particularly precise control device of high power semiconductor lasers drive current.
Background technology
Semiconductor laser is that the light that utilizes the interior stimulated radiation resonant cavity that produces of semi-conducting material to provide feeds back a based semiconductor device of making, and it needs current drives.Semiconductor laser is a kind of junction device, and is poor to the ability to bear of surge, large electricity transient process have nanosecond or more the electric current wind in broad pulse broadband form, can cause its permanent damage.The fluctuation of small drive current can cause the very big variation of luminous power and the broadening of output wavelength spectrum.Therefore, the power supply of semiconductor laser must have special protective circuit, such as time-delay soft start protection and current-limiting protection etc., also should have high current stability, simultaneously.
In the prior art, China Patent Publication No. CN200420076203.0, open day on December 7th, 2005, name is called " high-power semiconductor laser accurate current control device ", a kind of high-power semiconductor laser accurate current control device is disclosed, its drive circuit is an analog closed-loop control circuit, can accurately control electric current.But only depend on analogue technique to realize, the size of electric current output realizes by regulating adjustable resistance; Time-delay soft start is only realized by electric capacity.Mainly there is following shortcoming in above-mentioned semiconductor laser Driving technique; Can't with ppu swap data, the well work of monitoring laser, initialization circuit and need the knob of manual adjustments potentiometer when regulating electric current, inconvenient operation; When the regulation output electric current, such as potentiometer generation problem, can cause the damage of laser; Time-delay soft start only realizes that by electric capacity duration curve is non-adjustable, and effect is undesirable; After being damaged, current limiting element or empty fluid element can directly cause the damage of laser
China Patent Publication No. CN200510011124.0, open day on August 10th, 2005, name is called " driving power of semiconductor laser drive current control method and multi-mode working ", the driving power of disclosed semiconductor laser has been used digital control circuit, control and operation have been made things convenient for, be a digital closed loop circuit but its control section is actual, microcontroller gathers the semiconductor laser working state signal, by output current control signal after a large amount of calculating.Its shortcoming is: the digital closed loop circuit response time is long, is difficult to accomplish the variation of real-time response semiconductor laser, is unfavorable for controlling accurately the electric current of semiconductor laser.
Summary of the invention
In view of this, must provide a kind of current-limiting protection more accurate, response speed is more accelerated, and makes the drive unit of the higher high power semiconductor lasers of this device stability.
Utility model purpose of the present utility model is achieved through the following technical solutions:
A kind of drive unit of high power semiconductor lasers, microprocessor comprise DA interface 1, DA interface 2 and AD interface, and it is characterized in that: drive circuit comprises: the current-limiting protection circuit module is connected the module cascaded structure and connects with electric current.
Wherein, preferred version is: described current-limiting protection circuit module comprises the first comparison amplifier; N-MOS1; high power semiconductor lasers; the first sampling resistor and the first sampling-feedback circuit consist of closed control circuit; wherein; the in-phase input end of described comparison amplifier is connected with the DA interface and is connected input and set maximum voltage; with be connected N-MOS1 that comparison amplifier the connects element for the control maximum current; its size of current of flowing through is determined by the output voltage of the first sampling resistor, the sampling voltage on the first sampling resistor is returned to the inverting input of the first comparison amplifier by the first sampling-feedback circuit.
Wherein, preferred version is: described electric current arranges module and comprises that the second comparison amplifier, N-MOS2, the second sampling resistor and the second sampling-feedback circuit consist of closed control circuit.Wherein, the in-phase input end of described the second comparison amplifier is by DA interface 2 input variable voltages, rear by connecting regulation output current element N-MOS2, the second sampling resistor of series connection, the second sampling-feedback circuit gather the inverting input that voltage on the second sampling resistor inputs to the second comparison amplifier.
Because the utility model drive circuit is by high power semiconductor lasers, the first sampling resistor and the second sampling resistor cascaded structure; the electric current that the first sampling resistor and the second sampling resistor sample is the actual current on the high power semiconductor lasers; like this; current-limiting protection is more accurate; response speed is more accelerated, and makes this device stability higher.
Description of drawings
In order to be easy to explanation, the utility model is done to describe in detail by following preferred embodiment and accompanying drawing.
Fig. 1 is the structure principle chart of the utility model high power semiconductor lasers drive circuit.
Embodiment
Fig. 1 is the structural representation of the utility model drive circuit; the utility model drive circuit comprises that current-limiting protection circuit 11 and electric current arrange module 12 and be connected in series; as shown in Figure 2: described current-limiting protection current module 11 comprises the first comparison amplifier 111; N-MOS1; high power semiconductor lasers 113; the first sampling resistor 112 and the first sampling-feedback circuit 114 consist of closed control circuit; wherein; the in-phase input end of described comparison amplifier 111 is connected with the DA interface and is connected input and set maximum voltage; with be connected N-MOS1 that comparison amplifier 111 the connects element for the control maximum current; its size of current of flowing through is determined by the output voltage of the first sampling resistor 112; sampling voltage on the first sampling resistor 112 is returned to the inverting input of the first comparison amplifier 111 by the first sampling-feedback circuit 114; as shown in Figure 2: RL is load among the figure; be high power semiconductor lasers 113; according to actual conditions; can be that a high power semiconductor lasers (LD) also can be that the series-parallel form of a plurality of LD forms; the drive current of described load RL can flow through simultaneously with the first sampling resistor 112 of high power semiconductor lasers 113 series connection first sampling-feedback circuit 114 corresponding with it voltage signal at the first sampling resistor 112 two ends is fed back to the inverting input of the first comparison amplifier 113, thus the formation closed-loop control.
Described electric current arranges module 12 and comprises that the second comparison amplifier 121, N-MOS2, the second sampling resistor 122 and the second sampling-feedback circuit 124 consist of closed control circuit.Wherein, the in-phase input end of described the second comparison amplifier 121 is by DA interface 2 input variable voltages, rear by connecting regulation output current element N-MOS2, voltage on the second sampling resistor 122, the second sampling-feedback circuits 124 collections second sampling resistor 122 of series connection inputs to the inverting input of the second comparison amplifier 121.
Wherein, the high power semiconductor lasers 113 of described current-limiting protection circuit module 11, the first sampling resistor 112 and the second sampling resistor 122 cascaded structures.
Wherein, the operation principle that electric current arranges module 12 is: the size of drive current is to determine by with electric current the DA interface 2 that module links to each other being set, when DA interface 2 provides one voltage Vset is set, drive circuit can produce size at the branch road of connecting with LD and act on the LD for the drive current of Vset/Rs2, makes LD produce laser.
The control precision of described drive current determines by the precision of DAC chip, the maximum voltage that the adjustable extent of drive current can export by the DAC chip and the size decision of sampling resistor 2, and maximum can not be above the current rating of LD and N-MOS.
Wherein, the operation principle of current-limiting protection circuit is: the lowest high-current value of restriction is determined by the DA interface 1 that is connected with current-limiting protection circuit; DA interface 1 provides a fixing voltage Vlimit, then can corresponding drive current with LD be limited in size and equals Vlimit/Rs1.When drive current during less than cut-off current, N-MOS1 is in the saturation conduction state, and drive current can arbitrarily be regulated in limited field continuously; When drive current equaled cut-off current, N-MOS1 was in critical conduction mode and the drive current clamper is arrived this point, and drive current can not increase again, thereby plays the effect of current-limiting protection.
Because the utility model drive circuit is by high power semiconductor lasers 113, the first sampling resistor 112 and the second sampling resistor 122 cascaded structures; the electric current that the first sampling resistor 112 and the second sampling resistor 122 sample is the actual current on the high power semiconductor lasers 113; like this; current-limiting protection is more accurate; response speed is more accelerated, and makes this device stability higher.
The embodiment of the above is the preferred embodiments of utility model; be not to limit implementation scope of the present utility model with this; scope of the present utility model comprises and is not limited to this embodiment, and the equivalence that all shapes according to the utility model, structure are done changes and all comprises in the protection range of the present utility model.
Claims (5)
1. the drive unit of a high power semiconductor lasers, microprocessor comprises DA interface 1, DA interface 2 and AD interface, it is characterized in that: drive circuit comprises: the current-limiting protection circuit module is connected the module cascaded structure and connects with electric current.
2. the drive unit of high power semiconductor lasers according to claim 1; it is characterized in that; described current-limiting protection circuit module comprises the first comparison amplifier; N-MOS1; high power semiconductor lasers; the first sampling resistor and the first sampling-feedback circuit consist of closed control circuit; wherein; the in-phase input end of described comparison amplifier is connected with the DA interface and is connected input and set maximum voltage; with be connected N-MOS1 that comparison amplifier the connects element for the control maximum current; its size of current of flowing through is determined by the output voltage of the first sampling resistor, the sampling voltage on the first sampling resistor is returned to the inverting input of the first comparison amplifier by the first sampling-feedback circuit.
3. the drive unit of high power semiconductor lasers according to claim 2 is characterized in that, described high power semiconductor lasers can be that a high power semiconductor lasers also can be that a plurality of laser connection in series-parallel form.
4. the drive unit of high power semiconductor lasers according to claim 1 is characterized in that, described electric current arranges module and comprises that the second comparison amplifier, N-MOS2, the second sampling resistor and the second sampling-feedback circuit consist of closed control circuit; Wherein, the in-phase input end of described the second comparison amplifier is by DA interface 2 input variable voltages, rear by connecting regulation output current element N-MOS2, the second sampling resistor of series connection, the second sampling-feedback circuit gather the inverting input that voltage on the second sampling resistor inputs to the second comparison amplifier.
5. according to claim 1 to the drive unit of the described high power semiconductor lasers of 4 any one, it is characterized in that described high power semiconductor lasers, the first sampling resistor and the second sampling resistor cascaded structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220296334 CN202678716U (en) | 2012-06-21 | 2012-06-21 | Drive device of large-power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220296334 CN202678716U (en) | 2012-06-21 | 2012-06-21 | Drive device of large-power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202678716U true CN202678716U (en) | 2013-01-16 |
Family
ID=47499592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220296334 Expired - Fee Related CN202678716U (en) | 2012-06-21 | 2012-06-21 | Drive device of large-power semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202678716U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384934A (en) * | 2015-09-11 | 2017-02-08 | 北京特安电源科技有限公司 | Realization method of multipath semiconductor laser driving power supply |
| CN111682507A (en) * | 2020-06-10 | 2020-09-18 | 昂纳信息技术（深圳）有限公司 | Monitoring device, monitoring system and monitoring method of laser driver |
-
2012
- 2012-06-21 CN CN 201220296334 patent/CN202678716U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384934A (en) * | 2015-09-11 | 2017-02-08 | 北京特安电源科技有限公司 | Realization method of multipath semiconductor laser driving power supply |
| CN111682507A (en) * | 2020-06-10 | 2020-09-18 | 昂纳信息技术（深圳）有限公司 | Monitoring device, monitoring system and monitoring method of laser driver |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100487991C (en) | Intelligent high-power semiconductor laser drive apparatus | |
| CN104135253B (en) | A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces | |
| CN103606895B (en) | A kind of overvoltage turn-off protection circuit | |
| CN106788398A (en) | Clock division circuits, control circuit and power management integrated circuit | |
| CN105934029A (en) | Multi-path LED constant current drive circuit | |
| CN102684615A (en) | Driving device achieving ideal power up and power down timing sequence of power amplifier | |
| CN202678716U (en) | Drive device of large-power semiconductor laser | |
| CN205377012U (en) | Reduce laser drive circuit structure of consumption | |
| CN102722209B (en) | Constant current source circuit | |
| CN102723658A (en) | Constant current source power supplying circuit of laser | |
| CN100530914C (en) | Switch power circuit | |
| CN204480101U (en) | A kind of low pressure difference linear voltage regulator of quick response | |
| CN103941790B (en) | High-speed wide-range high-precision programmable power source of multi-electrode active photoelectric devices | |
| CN203422694U (en) | TEC drive circuit | |
| CN105934026B (en) | A kind of both-end constant-current LED driving chip | |
| CN105391126A (en) | Spatial lithium-ion battery pack equalizing device | |
| CN204518162U (en) | A kind of charge pump type LED drive chip | |
| CN103677050A (en) | Voltage-controlled constant flow source circuit | |
| CN203660879U (en) | Constant current/constant voltage converter based on PWM modulation | |
| CN104758072A (en) | Constant power output circuit and ultrasonic tooth cleaner constant power control method | |
| CN101710782B (en) | Battery discharge circuit, power supply and LED lamp | |
| CN208079468U (en) | The controlled constant-current source circuit of Linear Control | |
| CN209471220U (en) | Simulated battery management system | |
| CN206894279U (en) | A kind of constant-current charging circuit and accumulation power supply | |
| CN204836660U (en) | Multichannel differential pressure sampling circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130116 Termination date: 20190621 |