CN202678292U - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN202678292U CN202678292U CN 201220317707 CN201220317707U CN202678292U CN 202678292 U CN202678292 U CN 202678292U CN 201220317707 CN201220317707 CN 201220317707 CN 201220317707 U CN201220317707 U CN 201220317707U CN 202678292 U CN202678292 U CN 202678292U
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- heating unit
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Abstract
The utility model provides semiconductor processing equipment. The semiconductor processing equipment comprises a cavity, an air inlet apparatus and a substrate supporting seat, wherein the substrate supporting seat is arranged in the cavity; the air inlet apparatus is used for inputting the reactant gas to the cavity; the substrate supporting seat comprises a supporting pedestal which is used for supporting one or more substrates; a heater is used for heating the supporting pedestal; and the distance between at least one part of the heater and the supporting pedestal is adjustable, thus adjusting the temperature of the supporting pedestal. The semiconductor processing equipment can obtain the effect for adjusting the temperature of the supporting pedestal and can expand the temperature adjusting mode and/or the temperature adjusting scope of the supporting pedestal by adjusting the distance between at least one part of the heater and the supporting pedestal.
Description
Technical field
The utility model relates to a kind of semiconductor processing equipment.
Background technology
Present stage, semiconductor device was widely used in the every aspect of production, life, and greatly improved production efficiency, and is convenient and enriched the people's life.
Producing semiconductor device needs various semiconductor processing equipments, as: physical vapour deposition (PVD) (PVD) equipment, chemical vapour deposition (CVD) (CVD) equipment and etching (etching) equipment.In the process of the semiconductor processing equipment of prior art to semi-conductive processing, substrate need to be placed on the substrate support pedestal in the reaction chamber, substrate is heated and regulate substrate temperature by substrate support pedestal.Below the semiconductor processing equipment to prior art carries out simple declaration as an example of Metalorganic chemical vapor deposition (MOCVD) equipment example.
See also Fig. 1, Fig. 1 is the structural representation of prior art MOCVD equipment.Described MOCVD equipment 1 comprises that cavity 11 is arranged on inlet duct 12 and the substrate support pedestal in the described cavity 11.Described inlet duct 12 is arranged on the top of described cavity 11.Described substrate support pedestal is arranged on the bottom of described cavity 11, and is oppositely arranged with described inlet duct 12.
Described substrate support pedestal is used for when 1 pair of substrate of described MOCVD equipment is processed, and supports and heats described substrate.Described substrate support pedestal comprises supporting base 13 and heater 14.Described supporting base 13 comprises towards the substrate supports face 131 of described inlet duct 12 and the bottom surface 132 relative with described substrate supports face 131.Substrate can be arranged on described substrate supports face 131.Described heater 14 is arranged on the side that described supporting base 13 closes on described bottom surface 132.Described heater 14 heats described supporting base 13 by the mode of thermal radiation or thermal convection, and common described heater 14 is strip heater.
In the process of carrying out substrate processing, substrate to be processed is arranged on the substrate supports face 131 of described supporting base 13.14 pairs of described supporting bases 13 of described heater heat, so that described supporting base 13 reaches default temperature.Thereby reacting gas enters in the described cavity 11 and is heated at the upper surface of described supporting base 13 from described inlet duct 12 and reacts at described substrate surface deposition thin film.
Substrate is processed, needed to control and regulate stayed surface 131 temperature parameters of described supporting base 13.Described temperature parameter comprises temperature level, Temperature Distribution and temperature homogeneity etc.Stayed surface 131 temperature that the substrate support pedestal of prior art is regulated described supporting base 13 by the power output of regulating heater 14 usually; As passing through controlling resistance heater strip heating power.
Yet, be limited to the adjusting of the power output of heater 14, along with the development of technology, stayed surface 131 temperature that the mode of the power output by regulating heater 14 is regulated described supporting base 13 can not satisfy the growth requirement of MOCVD equipment.The other types CVD equipment of prior art is such as PECVD equipment, LPCVD equipment etc., and other semiconductor processing equipment: have such as PVD equipment and Etching equipment etc. to have essentially identical substrate support pedestal, therefore also have essentially identical problem.
The utility model content
Substrate temperature is regulated the problem of the demand that can not satisfy technical development for the substrate support pedestal that solves the prior art semiconductor processing equipment, the utility model provides a kind of novel semiconductor processing equipment.
A kind of semiconductor processing equipment, it comprises cavity, inlet duct and is arranged on substrate support pedestal in the described cavity, described inlet duct is used for inputting reacting gas to described cavity, and described a kind of substrate support pedestal comprises: supporting base is used for supporting one or more substrates; Heater, described heater are used for heating described supporting base, and the distance between at least a portion of described heater and the described supporting base is adjustable, thus the temperature of regulating described supporting base.
In the semiconductor processing equipment of the present utility model, distance between at least a portion of described heater and the described supporting base is adjustable, because of heat exchange between described heater and the described supporting base and its Range-based between the two, distance diminishes, heat exchange becomes large between described heater and the described supporting base, the temperature of described supporting base just raises, and vice versa; Therefore, just can reach the described support base temperature of adjusting by the distance of regulating between at least part of and described supporting base of heater; Thereby expanded described support base temperature regulative mode and/or temperature regulating range.
Description of drawings
Fig. 1 is the structural representation of prior art MOCVD equipment.
Fig. 2 is the substrate support pedestal cross-sectional view of the utility model semiconductor processing equipment the first execution mode.
Fig. 3 is the substrate support pedestal cross-sectional view of the utility model semiconductor processing equipment the second execution mode.
Fig. 4 is the planar structure schematic diagram of heater shown in Figure 3.
Fig. 5 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 3rd execution mode.
Fig. 6 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 4th execution mode.
Fig. 7 is the planar structure schematic diagram of the described heater of Fig. 6.
Fig. 8 is another execution mode planar structure schematic diagram of the described heater of Fig. 6.
Fig. 9 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 5th execution mode.
Embodiment
The substrate support pedestal of the semiconductor processing equipment of prior art exists regulates the problem that can not satisfy the technical development demand to substrate temperature.Be the problem that the substrate support pedestal that solves the prior art semiconductor processing equipment exists, the utility model provides a kind of semiconductor processing equipment; Described semiconductor processing equipment comprises cavity, inlet duct and is arranged on substrate support pedestal in the described cavity, described inlet duct is used for inputting reacting gas to described cavity, described a kind of substrate support pedestal comprises: supporting base is used for supporting one or more substrates; Heater, described heater are used for heating described supporting base, and the distance between at least a portion of described heater and the described supporting base is adjustable, thus the temperature of regulating described supporting base.
In the semiconductor processing equipment of the present utility model, the distance between at least a portion of described heater and the described supporting base is adjustable; Because of heat exchange between described heater and the described supporting base and its Range-based between the two, it is large that distance becomes, and heat exchange becomes large between described heater and the described supporting base, and the temperature of described supporting base is rising just, and vice versa.Therefore, just can reach the described support base temperature of adjusting by the distance of regulating between at least part of and described supporting base of heater, expand described support base temperature regulative mode and temperature regulating range.
See also Fig. 2, Fig. 2 is the substrate support pedestal cross-sectional view of the utility model semiconductor processing equipment the first execution mode.Described substrate support pedestal 2 is arranged in the cavity of semiconductor processing equipment, is used for supporting and heating one or more substrates; Described semiconductor processing equipment also comprises an inlet duct, and described inlet duct is used for introducing reacting gas to described cavity, and is preferred, and described inlet duct is for being positioned at described cavity, and the spray head that is oppositely arranged with described substrate support pedestal 2.Wherein, described semiconductor processing equipment can be physical vapour deposition (PVD) (PVD) equipment, chemical vapour deposition (CVD) (CVD) equipment or etching (etching) equipment; Preferably, described semiconductor processing equipment is chemical vapour deposition (CVD) (CVD) equipment; Further preferred, described semiconductor processing equipment is metal organic chemical vapor deposition (MOCVD) equipment; Optimum, described semiconductor processing equipment is nearly coupling spray hair style metal organic chemical vapor deposition (CCS-MOCVD) equipment.
Described substrate support pedestal 2 comprises supporting base 22 and heater 21, and described supporting base 22 comprises substrate supports face 221 and the bottom surface 222 relative with described substrate supports face 221.Substrate 23 can be arranged on described substrate supports face 221.Described heater 21 is arranged on the side that described supporting base 22 closes on described bottom surface 222.Described heater 21 heats described supporting base 22 by the mode of thermal radiation or thermal convection; Distance H between described supporting base 22 and the described heater 21 is adjustable, to regulate the temperature of described supporting base 22.Described heater 21 can be resistance heater, as: as described in heater 21 be nickel strip heater or tungsten strip heater.Optionally, described heater 21 also can be infrared heater.
Described substrate support pedestal 2 also comprises a driver module (not shown), in order to regulate the distance H between described supporting base 22 and the described heater 21.Described driver module can be by moving described supporting base 22 or described heater 21 to regulate described distance H.Preferably, described driver module is connected to described heater 21; Described driver module by the described heater 21 of translation make its near or away from described supporting base 22 to regulate described distance H.
The adjustment process of 2 pairs of described supporting bases 22 of described substrate support pedestal is, when described supporting base 22 temperature need to raise; Regulate the distance H between described supporting base 22 and the described heater 21 so that described distance H dwindles, as so that as described in driver module drive as described in heater 21 translations near as described in supporting base 22.Because described distance H is dwindled, thereby the thermal radiation that described heater 21 sends or increase by the heat that thermal convection is transferred to described supporting base 22, then described supporting base 22 increases with the heat exchange of described heater 21, thereby so that the rising of the temperature of described supporting base 22; Otherwise, so that the increase of described distance H, then can be so that the temperature of described supporting base 22 reduces.
The substrate support pedestal 2 of present embodiment, thus reach the purpose of regulating described supporting base 22 temperature by the distance H of regulating between heater 21 and the described supporting base 22, expanded described supporting base 22 temperature regulation mechanism and temperature regulating range.
See also Fig. 3, Fig. 3 is the substrate support pedestal cross-sectional view of the utility model semiconductor processing equipment the second execution mode.Described substrate support pedestal 3 is arranged in the cavity of semiconductor processing equipment, is used for supporting and heating one or more substrates; Described semiconductor processing equipment also comprises an inlet duct, and described inlet duct is used for introducing reacting gas to described cavity, and is preferred, and described inlet duct is for being positioned at described cavity, and the spray head that is oppositely arranged with described substrate support pedestal 3.Wherein, described semiconductor processing equipment can be physical vapour deposition (PVD) (PVD) equipment, chemical vapour deposition (CVD) (CVD) equipment or etching (etching) equipment; Preferably, described semiconductor processing equipment is chemical vapour deposition (CVD) (CVD) equipment; Further preferred, described semiconductor processing equipment is metal organic chemical vapor deposition (MOCVD) equipment; Optimum, described semiconductor processing equipment is nearly coupling spray hair style metal organic chemical vapor deposition (CCS-MOCVD) equipment.
Described substrate support pedestal 3 comprises supporting base 32 and heater 31.Described supporting base 32 is oppositely arranged with described heater 31.
Described supporting base 32 comprises substrate supports face 321 and the bottom surface 322 that is oppositely arranged with described substrate supports face 321.One or more substrates 33 can be arranged on described substrate supports face 321.Described heater 31 is arranged on the side that described supporting base 32 closes on described bottom surface 322.
Described heater 31 preferably heats described supporting base 32 by the mode of thermal radiation or thermal convection; Described heater 21 can be resistance heater, as: as described in heater 21 be nickel strip heater or tungsten strip heater.Optionally, described heater 21 also can be infrared heater.
Please consult simultaneously Fig. 4, Fig. 4 is the planar structure schematic diagram of heater 31 shown in Figure 3.Described heater 31 comprises the first heating unit 311 and is arranged on described the first heating unit 311 the second heating unit 312 on every side; Described the first heating unit 311 is preferred circular, described the second heating unit 312 preferably is circular and around described the first heating unit 311, described the second heating unit 312 also can be a plurality of heating modules that are radial setting around described the first heating unit 311; Optionally, described the first heating unit 311 can be polygon, as: rectangle, triangle, square, regular pentagon; Described the second heating unit 312 can be for being the ring-type that matches with described the first heating unit 311 shapes, or comprise a plurality of heating modules that arrange around described the first heating unit 311.The central area of described the first heating unit 311 corresponding described supporting bases 32, and mainly the central area of described supporting base 32 is heated, the fringe region of described the second heating unit 312 corresponding described supporting bases 32, and mainly described supporting base 32 fringe regions are heated.Wherein, the distance H between described the first heating unit 311 and the described supporting base 32 ' adjustable, or the distance H between described the second heating unit 312 and the described supporting base 32 is adjustable.By regulating the distance H between described the first heating unit 311 and the described supporting base 32 ' or described the second heating unit 312 and described supporting base 32 between distance H, the thermal radiation of sending from described heater 31 or the heat that is transferred to described supporting base 32 by thermal convection can be changed, thereby the temperature of described supporting base 32 can be changed.
In the present embodiment, the distance H between described the second heating unit 312 and the described supporting base 32 is adjustable.By regulating the distance H between the relatively described supporting base 32 of described the second heating unit 312, the temperature that can regulate described supporting base 32 fringe regions.Because described supporting base 32 fringe region radiating rates will be higher than the radiating rate of described supporting base 32 central areas.Thereby therefore can regulate described the second heating unit 312 by nearlyer described supporting base 32 so that the temperature of described supporting base 32 fringe regions raises, thereby so that uniformity of temperature profile on the substrate supports face 321 of described supporting base 32.Particularly described substrate support pedestal is in the application of high substrate treatment temperature semiconductor equipment, and in the application such as metal organic chemical vapor deposition (MOCVD) equipment, the temperature of the substrate supports face 321 of described supporting base 32 is very high, usually above 600 ℃; Or even be higher than 1000 ℃, the mode of the power output by described the first heating unit 311 of the simple adjusting of prior art or described the second heating unit 312, because the power output of described the second heating unit 312 is limited, even, make the power output maximum of described the second heating unit 312 also may not be so that the fringe region temperature of described supporting base 32 meets the requirements of temperature, thereby so that the temperature distributing disproportionation of the substrate supports face 321 of described supporting base 32 is even, the temperature of described supporting base 32 fringe regions is low than the temperature of its central area.In the substrate support pedestal 3 in the present embodiment, described the second heating unit 312 can regulate and described supporting base 32 between distance H, thereby can further enlarge the adjustable range to the temperature of described supporting base 32 fringe regions, and then can further improve the temperature of described supporting base 32 fringe regions, therefore can be so that the uniformity of temperature profile of the substrate supports face 321 of described supporting base 32.
In the described substrate support pedestal 3 of present embodiment, described substrate support pedestal 3 can also comprise the driver module (not shown); Described driver module is connected to described the second heating unit 312; Described driver module by described the second heating unit 312 of translation make its near or away from described supporting base 32 to regulate described distance H.
Optionally, in the described substrate support pedestal 3 of present embodiment, the relatively described supporting base 32 of described the first heating unit 311 is fixed.Because the relatively described supporting base 32 of described the first heating unit 311 is fixed, described the first heating unit 311 can be fixedly mounted in the cavity of semiconductor processing device, reduced baroque be used to regulating distance H between the relatively described supporting base 32 of described the first heating unit 311 ' mechanism, so that described substrate support pedestal 3 structures are simpler, cost is lower.Further, the distance H between described the second heating unit 312 and the described supporting base 32 is less than or equal to the fixed range H ' between described the first heating unit and the described supporting base 32.Because the radiating rate of the fringe region of described supporting base 32 is very fast, therefore usually need described the second heating unit 312 that the more heat of fringe region of described supporting base 32 is provided, so described the second heating unit 312 should be than the more close described supporting base 32 of described the first heating unit 311, to improve utilization efficiency of heat energy.Therefore, distance H is regulated in the fixed range H ' scope that is less than or equal between described the first heating unit 311 and the described supporting base 32 between described the second heating unit 312 and the described supporting base 32.Can improve utilization efficiency of heat energy; And because the adjusting of described the second heating unit 312 is limited in the less scope, the driving stroke that drives the driver module that described the second heating unit 312 moves is less, and therefore required driver module can be simpler, and cost is lower.
See also Fig. 5, Fig. 5 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 3rd execution mode.The semiconductor processing equipment of the semiconductor processing equipment of described the 3rd execution mode and described the second execution mode is basic identical, and its difference is: the first heating unit 311 ' of substrate support pedestal 3 ' and the distance H between the supporting base 32 ' ' adjustable; So, when the non-uniform temperature of the central area of described supporting base 32 ' and fringe region, can pass through to regulate the distance H between described the first heating unit 311 ' and the supporting base 32 ' ', regulate simultaneously the distance H between described the second heating unit 312 ' and the supporting base 32 ', so that the temperature of described supporting base 32 ' central area and fringe region reaches rapidly even.Simultaneously, described the first heating unit 311 ' mainly heats the central area of described supporting base 32 ', and the central area of described supporting base 32 ' is 32 ' main region of described supporting base, when described supporting base 32 ' needs to raise or reduces temperature, by regulating the distance H between described the first heating unit 311 ' and the supporting base 32 ' ', can be so that described supporting base 32 ' reaches rapidly required temperature.Preferably, the distance H of described the first heating unit 311 ' and described supporting base 32 ' ' more than or equal to the ultimate range H between described the second heating unit 312 ' and the described supporting base 32 '.Thus, the adjusting of described the first heating unit 311 ' is limited in the less scope, and the driving stroke that drives the mobile driver module of described the first heating unit 311 ' is less, and therefore required driver module can be simpler, and cost is lower.
See also Fig. 6, Fig. 6 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 4th execution mode.The semiconductor processing equipment of described the 4th execution mode can be basic identical with the semiconductor processing equipment of described the second execution mode or the 3rd execution mode, its difference is: the second heating unit 412 of substrate support pedestal 4 comprises a plurality of heating modules that are arranged on around described the first heating unit 411, each described heating module is by regulating the distance between described heating module and the supporting base 42 around the mode of rotating shaft O rotation, so that, when regulating described the second heating unit 412 near described supporting base 42, described heating module is away from the more close described supporting base 42 of a side of described the first heating unit 411.Because at the fringe region of described supporting base 42, the closer to the edge of described supporting base 42, radiating rate is faster; And when the temperature of described supporting base 42 was higher, the variable gradient of the fringe region radiating rate of described supporting base 42 was just larger; When described heating module by rotating around described rotating shaft O so that described heating module during near described supporting base 42, described supporting base 42 is normally heating up, therefore, described heating module is by rotating around described rotating shaft O, can so that the fringe region of described supporting base 42 near the place at the edge of described supporting base 42, the described heating module of distance is nearer, thereby compensated the variation of the fringe region radiating rate of described supporting base 42, so that described supporting base 42 temperature are more even.
Please consult simultaneously Fig. 6 and Fig. 7, Fig. 7 is the planar structure schematic diagram of the described heater 41 of Fig. 6.In the substrate support pedestal 4 of present embodiment, described the first heating unit 411 can be polygon, and preferred, described primary heater 411 can be rectangular.Described each heating module is bar shaped.Described a plurality of heating module correspondence is closed on the described a plurality of limits that are polygonal the first heating unit 411 and is arranged.The corresponding sides of described each heating module and described the first heating unit 411 are hinged by hinge 43.
Please consult simultaneously Fig. 6 and Fig. 8, Fig. 8 is another execution mode planar structure schematic diagram of the described heater 41 of Fig. 6.In the substrate support pedestal 4 of present embodiment, described the first heating unit 411 can be circle, and is described.Described a plurality of heating module radially distributes around the first heating unit 411 of described circle.
See also Fig. 9, Fig. 9 is the substrate support pedestal cross section structure schematic diagram of the utility model semiconductor processing equipment the 5th execution mode.The semiconductor processing equipment of described the 5th execution mode can be basic identical with the semiconductor processing equipment of the semiconductor processing equipment of described the 3rd execution mode or the 4th execution mode, and its difference is: the first heating unit 511 of substrate support pedestal 5 comprises main heating module 514 and center heating module 513.Described center heating module 513 is arranged on the zone that is centered on by described main heating module 514.Distance between described main heating module 514 and the described supporting base 52 is fixed, because the heating of 514 pairs of described supporting bases 52 of described main heating module plays a major role, therefore make fixing can conveniently the control the temperature of described supporting base 52 of distance between described main heating module 514 and the described supporting base 52.Distance between described center heating module 513 and the described supporting base 52 also can be fixed, and greater than the distance between described main heating module 514 and the described supporting base 52; Because described supporting base 52 is the closer to the zone at its center, radiating rate is the slowest; Therefore, so that the distance between center heating module 513 and the described supporting base 52, greater than the distance between described main heating module 514 and the described supporting base 52, can be so that the more uniform temperature of described supporting base 52.Preferably, in the substrate support pedestal 5 of present embodiment, distance between the described center heating module 513 relatively described supporting bases 53 is adjustable, thus the temperature that can regulate more rapidly and accurately described supporting base 52, so that the more uniform temperature of described supporting base 52.Further, the distance between described center heating module 513 and the described supporting base 52 is greater than the distance between described main heating module 514 and the described supporting base 52.
Alternatively, in the substrate support pedestal 5 of present embodiment, described center heating module 513 and described main heating module 514 are all adjustable.Described center heating module 513 preferably can be regulated distance between the relative described supporting base 52 in linkage with described main heating module 514.The mode that described interlock is regulated is preferably: described center heating module 513 increases or simultaneously minimizing simultaneously with distance between the described main heating module 514 relative described supporting bases 52; And the distance between described center heating module 513 and the described supporting base 52 gathers way and gathers way greater than the distance between described main heating module 514 and the described supporting base 52.It can also be other interlock regulative modes that described interlock is regulated, as: as described in center heating module 513 with as described in main heating module 514 relative to as described in supporting base 52 move round about in linkage.
The utility model and non-limiting above-mentioned execution mode are described, as: in the respective embodiments described above, the bottom surface of described supporting base can further include the micro-structural that is arranged on described bottom surface, to strengthen the thermal absorptivity of described supporting base; Described heater can also be arranged on the side that described supporting base closes on described substrate supports face, so that described supporting base is heated; Described heater also can replace with heat exchanger, described heat exchanger can only have the heat exchanger of heating function, described heat exchanger also can be the heat exchanger that has simultaneously the heating and cooling function, described heat exchanger can also be the heat exchanger that only has refrigerating function, when described heat exchanger is when the heat exchanger of refrigerating function is arranged, according to heating the essentially identical heat exchange principle of described supporting base with using heater, described heat exchanger can be so that the substrate that arranges on the described substrate support pedestal of the present utility model obtains needed temperature control to the cooling of described supporting base.At above-mentioned execution mode two to execution mode five, described the second heating unit can also be arranged on described supporting base around, heat with the fringe region to described supporting base.
Although the utility model discloses as above with preferred embodiment, the utility model is not to be defined in this.Any those skilled in the art within not breaking away from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection range of the present utility model should be as the criterion with the claim limited range.
Claims (10)
1. semiconductor processing equipment, it comprises cavity, inlet duct and is arranged on substrate support pedestal in the described cavity, and described inlet duct is used for inputting reacting gas to described cavity, and described substrate support pedestal comprises:
Supporting base is used for supporting one or more substrates;
Heater, described heater are used for heating described supporting base, and its feature exists:
Distance between at least a portion of described heater and the described supporting base is adjustable, thus the temperature of regulating described supporting base.
2. semiconductor processing equipment as claimed in claim 1, it is characterized in that: described heater comprises at least the first heating unit and is arranged on described the first heating unit the second heating unit on every side, the central area of the corresponding described supporting base of described the first heating unit, the fringe region of the corresponding described supporting base of described the second heating unit, the distance between described the second heating unit and the described supporting base is adjustable.
3. semiconductor processing equipment as claimed in claim 2, it is characterized in that: the distance between described the first heating unit and the described supporting base is fixed, and the distance between described the second heating unit and the described supporting base is less than or equal to the distance between described the first heating unit and the described supporting base.
4. semiconductor processing equipment as claimed in claim 2, it is characterized in that: the distance between described the first heating unit and the described supporting base is adjustable, and the distance of described the first heating unit and described supporting base is more than or equal to the ultimate range between described the second heating unit and the described supporting base.
5. semiconductor processing equipment as claimed in claim 2 is characterized in that: described the second heating unit regulate by the mode of translation and described supporting base between distance.
6. semiconductor processing equipment as claimed in claim 2, it is characterized in that: described the second heating unit comprises a plurality of heating modules that are arranged on around described the first heating unit, described heating module is by regulating the distance between described heating module and the described supporting base around the mode of rotating shaft rotation, so that, when regulating described the second heating unit near described supporting base, described heating module is away from the more close described supporting base of a side of described the first heating unit.
7. semiconductor processing equipment as claimed in claim 6, it is characterized in that: described the first heating unit is polygon, described a plurality of heating module is bar shaped, and described a plurality of heating module correspondences are closed on described each limit of polygonal the first heating unit that is and arranged, and with the limit of correspondence as rotating shaft.
8. semiconductor processing equipment as claimed in claim 2, it is characterized in that: described the first heating unit comprises main heating module and center heating module, described center heating module is arranged on the zone that is centered on by described main heating module, distance between described main heating module and the described supporting base is fixed, distance between described center heating module and the described supporting base is adjustable, and described distance is greater than the distance between described main heating module and the described supporting base.
9. semiconductor processing equipment as claimed in claim 1, it is characterized in that: described supporting base comprises a substrate supports face and a bottom surface relative with described substrate supports face, described substrate is arranged on described substrate supports face, and described heater is arranged on bottom surface one side of closing on described supporting base.
10. semiconductor processing equipment as claimed in claim 1, it is characterized in that: described heater comprises thermal radiation or thermal convection to the mode of heating of described supporting base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220317707 CN202678292U (en) | 2012-06-29 | 2012-06-29 | Semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220317707 CN202678292U (en) | 2012-06-29 | 2012-06-29 | Semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202678292U true CN202678292U (en) | 2013-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220317707 Expired - Fee Related CN202678292U (en) | 2012-06-29 | 2012-06-29 | Semiconductor processing equipment |
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| CN (1) | CN202678292U (en) |
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- 2012-06-29 CN CN 201220317707 patent/CN202678292U/en not_active Expired - Fee Related
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